公开(公告)号：US20110146060A1

公开(公告)日：2011-06-23

申请号：US12932552

申请日：2011-02-28

申请人： Cherng-Chyi Han ,  Min Li ,  Fenglin Liu ,  Jiun-Ting Lee

发明人： Cherng-Chyi Han ,  Min Li ,  Fenglin Liu ,  Jiun-Ting Lee

IPC分类号： G11B5/127

CPC分类号： G11B5/3163 ,  G11B5/11 ,  G11B5/1278 ,  G11B5/3116 ,  G11B5/3146 ,  G11B5/315 ,  Y10T29/49032 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A perpendicular magnetic recording (PMR) head is fabricated with a pole tip shielded laterally by a separated pair of side shields and shielded from above by an upper shield. The side shields are formed by a RIE process using specific gases applied to a shield layer through a masking layer formed of material that has a slower etch rate than the shield material. A masking layer of Ta, Ru/Ta, TaN or Ti, formed on a shield layer of NiFe and using RIE gases of CH3OH, CO or NH3 or their combinations, produces the desired result. The differential in etch rates maintains the opening dimension within the mask and allows the formation of a wedge-shaped trench within the shield layer that separates the layer into two shields. The pole tip is then plated within the trench and, being aligned by the trench, acquires the wedge-shaped cross-section of the trench. An upper shield is then formed above the side shields and pole.

摘要翻译： 垂直磁记录（PMR）头被制造成具有通过分离的一对侧屏蔽横向屏蔽的极尖并且被上屏蔽从上面屏蔽。 侧面屏蔽是通过RIE工艺形成的，其使用通过掩模层施加到屏蔽层上的特定气体，该屏蔽层由具有比屏蔽材料更慢的蚀刻速率的材料形成。 形成在NiFe的屏蔽层上并使用CH 3 OH，CO或NH 3的RIE气体或其组合的Ta，Ru / Ta，TaN或Ti的掩蔽层产生期望的结果。 蚀刻速率的差异保持了掩模内的开口尺寸，并且允许在屏蔽层内形成将该层分成两个屏蔽层的楔形沟槽。 然后将磁极尖端电镀在沟槽内，并且通过沟槽对准，获得沟槽的楔形横截面。 然后在侧屏和极上方形成上屏蔽。

公开(公告)号：US07773341B2

公开(公告)日：2010-08-10

申请号：US11825034

申请日：2007-07-03

申请人： Kunliang Zhang ,  Min Zheng ,  Min Li ,  Chen-Jung Chien ,  Cherng-Chyi Han

发明人： Kunliang Zhang ,  Min Zheng ,  Min Li ,  Chen-Jung Chien ,  Cherng-Chyi Han

IPC分类号： G11B5/33

CPC分类号： G11B5/3116 ,  G11B5/1278

摘要： A laminated main pole layer is disclosed in which a non-AFC scheme is used to break the magnetic coupling between adjacent high moment layers and reduce remanence in a hard axis direction while maintaining a high magnetic moment and achieving low values for Hch, Hce, and Hk. An amorphous material layer with a thickness of 3 to 20 Angstroms and made of an oxide, nitride, or oxynitride of one or more of Hf, Zr, Ta, Al, Mg, Zn, or Si is inserted between adjacent high moment stacks. The laminated structure also includes an alignment layer below each high moment layer within each stack. In one embodiment, a Ru coupling layer is inserted between two high moment layers in each stack to introduce an AFC scheme. An uppermost Ru layer is used as a CMP stop layer. A post annealing process may be employed to further reduce the anisotropy field (Hk).

摘要翻译： 公开了一种层叠主极层，其中使用非AFC方案来破坏相邻的高力矩层之间的磁耦合，并且在保持高磁矩的同时降低硬轴方向的剩磁，并实现Hch，Hce和 Hk。 由Hf，Zr，Ta，Al，Mg，Zn或Si中的一种或多种的氧化物，氮化物或氧氮化物形成的厚度为3〜20埃的无定形材料层插入相邻的高强度叠层之间。 层叠结构还包括在每个堆叠内的每个高力矩层下面的对准层。 在一个实施例中，Ru耦合层插入每个堆叠中的两个高矩层之间以引入AFC方案。 使用最上层的Ru层作为CMP停止层。 可以采用后退火工艺来进一步降低各向异性场（Hk）。

公开(公告)号：US07701666B2

公开(公告)日：2010-04-20

申请号：US12001350

申请日：2007-12-11

申请人： Cherng-Chyi Han ,  Kenichi Takano

发明人： Cherng-Chyi Han ,  Kenichi Takano

IPC分类号： G11B5/17

CPC分类号： G11B5/1278 ,  G11B5/3116 ,  G11B5/3143 ,  G11B5/3163 ,  Y10T29/49041 ,  Y10T29/49044 ,  Y10T29/49048 ,  Y10T29/4906 ,  Y10T29/49062

摘要： A perpendicular magnetic recording (PMR) head with single or double coil layers has a small write shield stitched onto a main write shield. The stitched shield allows the main write pole to produce a vertical write field with sharp vertical gradients that is reduced on both sides of the write pole so that adjacent track erasures are eliminated. From a fabrication point of view, both the main pole and the stitched shield are defined and formed using a single photolithographic process, a trim mask and CMP lapping process so that the main shield can be stitched onto a self-aligned main pole and stitched shield.

摘要翻译： 具有单线圈或双线圈层的垂直磁记录（PMR）头具有缝合在主写屏蔽上的小写写屏蔽。 拼接屏蔽允许主写柱产生垂直写入场，其尖锐的垂直梯度在写入极的两侧减小，从而消除相邻的轨迹擦除。 从制造的角度来看，使用单一光刻工艺，修剪掩模和CMP研磨工艺来限定和形成主极和缝合屏蔽物，使得主屏蔽可以缝合到自对准的主极和缝合屏蔽 。

公开(公告)号：US20080094750A1

公开(公告)日：2008-04-24

申请号：US12001350

申请日：2007-12-11

申请人： Cherng-Chyi Han ,  Kenichi Takano

发明人： Cherng-Chyi Han ,  Kenichi Takano

IPC分类号： G11B5/147

CPC分类号： G11B5/1278 ,  G11B5/3116 ,  G11B5/3143 ,  G11B5/3163 ,  Y10T29/49041 ,  Y10T29/49044 ,  Y10T29/49048 ,  Y10T29/4906 ,  Y10T29/49062

摘要： A perpendicular magnetic recording (PMR) head with single or double coil layers has a small write shield stitched onto a main write shield. The stitched shield allows the main write pole to produce a vertical write field with sharp vertical gradients that is reduced on both sides of the write pole so that adjacent track erasures are eliminated. From a fabrication point of view, both the main pole and the stitched shield are defined and formed using a single photolithographic process, a trim mask and CMP lapping process so that the main shield can be stitched onto a self-aligned main pole and stitched shield.

摘要翻译： 具有单线圈或双线圈层的垂直磁记录（PMR）头具有缝合在主写屏蔽上的小写写屏蔽。 拼接屏蔽允许主写柱产生垂直写入场，其尖锐的垂直梯度在写入极的两侧减小，从而消除相邻的轨迹擦除。 从制造的角度来看，使用单一光刻工艺，修剪掩模和CMP研磨工艺来限定和形成主极和缝合屏蔽物，使得主屏蔽可以缝合到自对准的主极和缝合屏蔽 。

公开(公告)号：US20080055787A1

公开(公告)日：2008-03-06

申请号：US11975955

申请日：2007-10-23

申请人： Cherng-Chyi Han ,  Laurie Lauchlan ,  Xiaomin Liu

发明人： Cherng-Chyi Han ,  Laurie Lauchlan ,  Xiaomin Liu

IPC分类号： G11B5/127 ,  G11B5/33

CPC分类号： G11B5/3163 ,  G11B5/1272 ,  G11B5/3116 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044

摘要： For high track density recording, tighter reader and writer track width control are essential. This has been achieved by using the write gap layer as the plating seed on which the upper pole was electro-formed so that the width of the GMR pedestal serves to define the device's write track width.

摘要翻译： 对于高轨道密度记录，更紧密的读写器轨道宽度控制是至关重要的。 这是通过使用写间隙层作为上电极电镀的电镀种子来实现的，使得GMR基座的宽度用于限定器件的写入轨道宽度。

公开(公告)号：US07221539B2

公开(公告)日：2007-05-22

申请号：US10814077

申请日：2004-03-31

申请人： Kenichi Takano ,  Cherng-Chyi Han

发明人： Kenichi Takano ,  Cherng-Chyi Han

IPC分类号： G11B5/31 ,  G11B5/23

CPC分类号： G11B5/3116 ,  G11B5/1278 ,  G11B5/3113 ,  G11B5/3143

摘要： A PMR write head has a stitched shield formation which results in a strong perpendicular write field with sharp vertical gradients. The shape of the stitched shield is determined by two design parameters, d=½(WSWSLE−WMPTE), and TSWS, where WSWSLE is the width of the leading edge of the stitched shield in the ABS plane, WMPTE is the width of the trailing edge of the main magnetic pole in the ABS plane and TSWS is the thickness of the stitched shield. By a proper choice of these parameters, the write field of the head is sharply limited in the cross-track direction, so that adjacent track erasures are eliminated.

摘要翻译： PMR写头具有缝合的屏蔽结构，其形成具有尖锐垂直梯度的强垂直写入场。 缝合屏蔽的形状由两个设计参数d =½（W> SWSLE-> W> MP MP TE TE TE TE SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB and and and and and and and and） W SHSLE 是ABS平面中缝合屏蔽的前缘的宽度，W> MPTE 是ABS平面中主磁极的后缘的宽度 而T SWS 是缝合屏蔽的厚度。 通过这些参数的适当选择，头部的写入场在交叉轨道方向上被大大限制，从而消除了相邻的轨迹擦除。

公开(公告)号：US6024886A

公开(公告)日：2000-02-15

申请号：US985648

申请日：1997-12-05

申请人： Cherng-Chyi Han ,  Yongchang Feng ,  Rodney E. Lee ,  Hui-Chuan Wang

发明人： Cherng-Chyi Han ,  Yongchang Feng ,  Rodney E. Lee ,  Hui-Chuan Wang

IPC分类号： G11B5/31 ,  G11B5/39 ,  B44C1/22

CPC分类号： G11B5/3967 ,  G11B5/3116 ,  G11B5/313 ,  G11B5/3163 ,  Y10T29/49032 ,  Y10T29/49048 ,  Y10T29/49052

摘要： Within a method for forming a magnetic transducer head there is first provided a substrate having formed thereover a lower magnetic pole layer in turn having formed thereupon a gap filling layer which is substantially planar. There is then formed upon the gap filling layer a patterned upper magnetic pole tip layer which serves as an etch mask layer for forming from the gap filling layer and the lower magnetic pole layer a patterned gap filling layer and an etched lower magnetic pole layer having a lower magnetic pole tip integral thereto, while simultaneously forming an etched patterned upper magnetic pole tip layer from the patterned upper magnetic pole tip layer. There is then formed upon the etched patterned upper magnetic pole tip layer and the etched lower magnetic pole layer a backfilling insulator layer to a thickness greater than a thickness of the etched patterned upper magnetic pole tip layer plus a thickness of the patterned gap filling layer plus a thickness of the lower magnetic pole tip. There is then planarized the backfilling insulator layer to form a patterned planarized backfilling insulator layer an exposed upper surface of which is coplanar with an exposed upper surface of the etched patterned upper magnetic pole tip layer. Finally, there is then formed a patterned upper magnetic pole layer contacting the exposed upper surface of the etched patterned upper magnetic pole tip layer.

摘要翻译： 在用于形成磁换能器头的方法中，首先提供了一个在其上形成有下磁极层的衬底，其上形成有大致平坦的间隙填充层。 然后在间隙填充层上形成图案化的上磁极尖端层，其用作用于从间隙填充层形成的蚀刻掩模层，并且下部磁极层形成图案化的间隙填充层和蚀刻的下部磁极层，该下部磁极层具有 下部磁极尖端与其成一体，同时从图案化的上磁极尖端层形成蚀刻图案的上磁极尖端层。 然后在蚀刻图案化的上磁极尖端层和蚀刻的下磁极层上形成厚度大于蚀刻图案的上磁极尖端层厚度加上图案化间隙填充层的厚度加上的回填绝缘体层 下磁极尖端的厚度。 然后平面化回填绝缘体层，以形成图案化的平坦化回填绝缘体层，其暴露的上表面与蚀刻图案化的上磁极尖端层的暴露的上表面共面。 最后，然后形成图案化的上磁极层，其接触蚀刻图案化的上磁极尖端层的暴露的上表面。

公开(公告)号：US6003223A

公开(公告)日：1999-12-21

申请号：US195650

申请日：1998-11-19

申请人： Jeffrey Paul Hagen ,  Cherng-Chyi Han ,  Jackie A. Franklin

发明人： Jeffrey Paul Hagen ,  Cherng-Chyi Han ,  Jackie A. Franklin

IPC分类号： G03F7/20 ,  G03F9/00 ,  G11B5/31 ,  G11B5/39 ,  G11B5/127

CPC分类号： G03F9/7046 ,  G03F7/70433 ,  G03F7/70475 ,  G11B5/39 ,  G11B5/3903 ,  G11B5/3163 ,  Y10T29/49041

摘要： A method of for aligning step and repeat reticle images for 2 adjacent sliders for magnetoresistive (MR) devices. The invention forms 3 wafer alignment targets for two adjacent sliders . The 3 wafer alignment targets are used to align adjacent reticle exposure fields. An novel common alignment target is between the two sliders. The stepper alignment system uses the wafer alignment target placed in the field stitch area between two adjacent fields and the alignment target for that particular field to align the reticle. The method includes: forming (1) a first wafer alignment target in the first slider area; (2) a second wafer alignment target in the second slider area; and (3) a center wafer alignment target between the first and the second wafer alignment targets. Using a stepper, exposing the first slider area with the reticle image field. The first reticle image field having spaced first and second reticle alignment keys. The first alignment key is aligned with the first wafer alignment target and the second reticle alignment key is aligned with the center alignment target. Next, stepping and exposing the second slider area with a second reticle image field by aligning a first reticle alignment key with the center wafer alignment target and aligning the second reticle alignment key of the second reticle image field with the second wafer alignment target.

摘要翻译： 一种用于对准用于磁阻（MR）器件的2个相邻滑块的步骤和重复标线图像的方法。 本发明为两个相邻的滑块形成3个晶片对准目标。 3个晶片对准目标用于对准相邻的掩模版曝光场。 两个滑块之间有一个新的共同对准目标。 步进对准系统使用放置在两个相邻场之间的场迹区域中的晶片对准目标和该特定场的对准目标来对准该掩模版。 该方法包括：在第一滑块区域中形成（1）第一晶片对准目标; （2）第二滑块区域中的第二晶片对准目标; 和（3）第一和第二晶片对准靶之间的中心晶片对准靶。 使用步进器，将掩模版图像场曝光第一个滑块区域。 第一掩模版图像场具有间隔开的第一和第二标线对准键。 第一对准键与第一晶片对准靶对准，第二标线对准键与中心对准靶对准。 接下来，通过将第一标线片对准键与中心晶片对准目标对准并将第二标线片图像场的第二标线图对准键与第二晶片对准目标对准，用第二标线图像场步进和曝光第二滑块区域。

公开(公告)号：US08305711B2

公开(公告)日：2012-11-06

申请号：US12660819

申请日：2010-03-03

申请人： Min Li ,  Cherng-Chyi Han ,  Kenichi Takano ,  Joe Smyth

发明人： Min Li ,  Cherng-Chyi Han ,  Kenichi Takano ,  Joe Smyth

IPC分类号： G11B5/187 ,  G11B5/127 ,  G11B5/02

CPC分类号： G11B5/314 ,  G11B5/1278 ,  G11B2005/0024

摘要： A microwave assisted magnetic recording writer is disclosed with an octagonal write pole having a top portion including a trailing edge that is self aligned to a spin transfer oscillator (STO). Leading and trailing edges are connected by two sidewalls each having three sections. A first section on each side is coplanar with the STO sidewalls and is connected to a sloped second section at a first corner. Each second section is connected to a third section at a second corner where the distance between second corners is greater than the distance between first corners. A method of forming the writer begins with a trapezoidal shaped write pole in an insulation layer. Two ion beam etch (IBE) steps are used to shape top and middle portions of the write pole and narrow the pole width to

摘要翻译： 公开了一种具有八角写磁极的微波辅助磁记录装置，其具有包括与自旋转移振荡器（STO）自对准的后沿的顶部。 前缘和后缘由具有三个部分的两个侧壁连接。 每侧的第一部分与STO侧壁共面，并且在第一角处连接到倾斜的第二部分。 每个第二部分连接到第二角处的第三部分，其中第二角之间的距离大于第一角之间的距离。 一种形成写入器的方法从绝缘层中的梯形写入极开始。 使用两个离子束蚀刻（IBE）步骤来形成写入极的顶部和中间部分，并将极宽度窄化到<50nm而不会破裂。 最后，在STO上形成一个后挡板。

公开(公告)号：US08184399B2

公开(公告)日：2012-05-22

申请号：US12924416

申请日：2010-09-27

申请人： Yan Wu ,  Moris Dovek ,  Zhigang Bai ,  Cherng-Chyi Han ,  Jiun-Ting Lee ,  Po-Kang Wang

发明人： Yan Wu ,  Moris Dovek ,  Zhigang Bai ,  Cherng-Chyi Han ,  Jiun-Ting Lee ,  Po-Kang Wang

IPC分类号： G11B5/127

CPC分类号： G11B5/1278 ,  G11B5/3116 ,  G11B5/3163

摘要： A perpendicular magnetic recording (PMR) head is fabricated with a tapered main pole having a variable thickness. The tapered portion of the pole is at the ABS tip and it can be formed by bevels at the leading or trailing edges or both. The taper terminates to form a region with a maximum thickness, t1, which extends for a certain distance proximally. Beyond this region of maximum thickness t1, the pole is then reduced to a constant minimum thickness t2. A yoke is attached to this region of constant minimum thickness. This pole design requires less flux because of the thinner region of the pole where it attaches to the yoke, but the thicker region just before the tapered ABS provides additional flux to drive the pole just before the ABS, so that high definition and field gain is achieved, yet fringing is significantly reduced.

摘要翻译： 制造具有可变厚度的锥形主极的垂直磁记录（PMR）头。 极的锥形部分在ABS尖端处，并且其可以由前缘或后缘处的斜面或两者形成。 锥形终止形成最大厚度的区域t1，其向近处延伸一定距离。 超过该最大厚度的区域t1，然后将极减小到恒定的最小厚度t2。 磁轭连接到恒定最小厚度的区域。 这个极设计需要更少的通量，因为它附着在磁轭上的磁极的较薄区域，而刚好在锥形ABS之前较厚的区域提供额外的磁通来驱动刚好在ABS之前的极点，因此高清晰度和场增益是 实现了，但边缘明显减少。