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公开(公告)号：US20090048378A1
公开(公告)日：2009-02-19
申请号：US12158199
申请日：2006-12-19
IPC分类号： C09D5/02
CPC分类号： C09D5/02 , C08L33/08 , C08L51/06 , C08L75/04 , C09D133/02 , C09D175/04 , C08L2666/02
摘要： It is an object of the present invention to provide a water-based one-pack-type coating composition which can form a coating film having a satisfactory feel of achieving a soft feel and coating film performance simultaneously and further maintains common performance of paint such as excellent design (a matt appearance, etc.), an adhesion property, coating film strength, abrasion resistance, water resistance, oil and grease-contamination resistance. A water-based one-pack-type coating composition of the present invention comprises: an ionomer resin emulsion (A), a polyolefin resin emulsion (B), resin particles (C), and a urethane dispersion (D), wherein a solid content mass ratio (mass ratio as converted into a solid content) of (C)/{(A)+(B)+(D)} is 40/100 to 100/100, a solid content mass ratio of (A)/(B) is 1/3 to 3/1, and a solid content mass ratio of {(A)+(B)}/(D) is 40/60 to 70/30.
摘要翻译： 本发明的目的是提供一种水性单组分型涂料组合物，其可以形成具有令人满意的达到柔软手感和涂膜性能的手感的涂膜，并进一步保持涂料的共同性能，例如 优异的设计（无光泽外观等），粘合性，涂膜强度，耐磨性，耐水性，油和油脂污染性。 本发明的水性单组分涂料组合物包括：离聚物树脂乳液（A），聚烯烃树脂乳液（B），树脂颗粒（C）和氨基甲酸酯分散体（D），其中固体 （C）/ {（A）+（B）+（D）}的含量质量比（转化为固体成分的质量比）为40/100〜100/100，固体成分质量比（A）/ （B）为1/3〜3/1，{（A）+（B）} /（D）的固体成分质量比为40/60〜70/30。
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公开(公告)号：US07482570B2
公开(公告)日：2009-01-27
申请号：US11826927
申请日：2007-07-19
CPC分类号： H01L27/14609 , H01L27/14601 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/1463 , H01L27/14645 , H01L27/14689
摘要： The invention is regarding to solid-state imaging device. A solid-state imaging device consistent with the present invention includes, a plurality of unit cells on a semiconductor substrate of a first conductivity type, each unit cell including a photoelectric conversion unit comprising a photodiode having a diffusion layer of a second conductivity type and a signal scanning circuit unit; a trench isolation region for isolating the photoelectric conversion unit from the signal scanning circuit unit, the trench isolation region being formed in the semiconductor substrate;a first element-isolating diffusion layer of the first conductivity type formed under a bottom face of the trench isolation region down to a position deeper than the diffusion layer of the photodiode from the surface of the semiconductor substrate.
摘要翻译： 本发明涉及固态成像装置。 根据本发明的固态成像装置包括：第一导电类型的半导体衬底上的多个单元，每个单元包括光电转换单元，该光电转换单元包括具有第二导电类型的扩散层的光电二极管和 信号扫描电路单元; 沟槽隔离区域，用于将光电转换单元与信号扫描电路单元隔离，沟槽隔离区形成在半导体衬底中; 第一导电类型的第一元件隔离扩散层形成在沟槽隔离区的底面下方到比半导体衬底的表面的光电二极管的扩散层更深的位置。
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73.发明申请公开(公告)号：US20090008686A1
公开(公告)日：2009-01-08
申请号：US12166621
申请日：2008-07-02
申请人： Motohiro MAEDA , Hisanori Ihara , Hirofumi Yamashita , Fumiaki Sano , Makoto Monoi , Takanori Yagami
发明人： Motohiro MAEDA , Hisanori Ihara , Hirofumi Yamashita , Fumiaki Sano , Makoto Monoi , Takanori Yagami
IPC分类号： H01L27/146
CPC分类号： H01L27/1463 , H01L27/14603
摘要： A transfer gate is formed such that both end portions thereof in a second direction, which crosses a first direction in which a photodiode and a floating diffusion layer that is formed with a distance from the photodiode are arranged, are located inside boundaries with element isolation regions. Channel stopper layers are formed on surface portions of a device region in the vicinity of lower parts of both end portions of the transfer gate in the second direction in such a manner to extend to the boundaries with the element isolation regions.
摘要翻译： 传输门形成为使得其第二方向上的两个端部跨过与光电二极管形成距离的光电二极管和浮动扩散层的第一方向，其位于与元件隔离区域的边界内 。 通道阻挡层形成在传输门的两端部的下部附近的器件区域的第二方向上的表面部分上，以延伸到与元件隔离区域的边界。
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公开(公告)号：US20080012088A1
公开(公告)日：2008-01-17
申请号：US11776791
申请日：2007-07-12
申请人： Tetsuya YAMAGUCHI , Hiroshige Goto , Hirofumi Yamashita , Ikuko Inoue , Nagataka Tanaka , Hisanori Ihara
发明人： Tetsuya YAMAGUCHI , Hiroshige Goto , Hirofumi Yamashita , Ikuko Inoue , Nagataka Tanaka , Hisanori Ihara
IPC分类号： H01L31/103
CPC分类号： H01L27/14609
摘要： An n/p−/p+ substrate where a p−-type epitaxial layer and an n-type epitaxial layer have been deposited on a p+-type substrate is provided. In the surface region of the n-type epitaxial layer, the n-type region of a photoelectric conversion part has been formed. Furthermore, a barrier layer composed of a p-type semiconductor region has been formed so as to enclose the n-type region of the photoelectric conversion part in a plane and reach the p−-type epitaxial layer from the substrate surface. A p-type semiconductor region has also been formed at a chip cutting part for dividing the substrate into individual devices so as to reach the p−-type epitaxial layer from the substrate surface.
摘要翻译： 其中p型+外延层和n型外延层已经沉积在p < SUP + +型衬底。 在n型外延层的表面区域中，形成了光电转换部的n型区域。 此外，已经形成了由p型半导体区域构成的阻挡层，以将光电转换部件的n型区域包围在平面内并从P型半导体区域到达p型半导体区域 基材表面。 在芯片切割部分也形成了p型半导体区域，用于将基板分离为各个器件，从而从衬底表面到达p +型外延层。
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公开(公告)号：US20070262240A1
公开(公告)日：2007-11-15
申请号：US11826926
申请日：2007-07-19
IPC分类号： H01L27/00
CPC分类号： H01L27/14609 , H01L27/14601 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/1463 , H01L27/14645 , H01L27/14689
摘要： The invention is regarding to solid-state imaging device. A solid-state imaging device consistent with the present invention includes, a plurality of unit cells on a semiconductor substrate of a first conductivity type, each unit cell including a photoelectric conversion unit comprising a photodiode having a diffusion layer of a second conductivity type and a signal scanning circuit unit; a trench isolation region for isolating the photoelectric conversion unit from the signal scanning circuit unit, the trench isolation region being formed in the semiconductor substrate; a first element-isolating diffusion layer of the first conductivity type formed under a bottom face of the trench isolation region down to a position deeper than the diffusion layer of the photodiode from the surface of the semiconductor substrate.
摘要翻译： 本发明涉及固态成像装置。 根据本发明的固态成像装置包括：第一导电类型的半导体衬底上的多个单元，每个单元包括光电转换单元，该光电转换单元包括具有第二导电类型的扩散层的光电二极管和 信号扫描电路单元; 沟槽隔离区域，用于将光电转换单元与信号扫描电路单元隔离，沟槽隔离区形成在半导体衬底中; 第一导电类型的第一元件隔离扩散层形成在沟槽隔离区的底面下方到比半导体衬底的表面的光电二极管的扩散层更深的位置。
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公开(公告)号：US07262396B2
公开(公告)日：2007-08-28
申请号：US10287707
申请日：2002-11-05
CPC分类号： H01L27/14609 , H01L27/14601 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/1463 , H01L27/14645 , H01L27/14689
摘要： The invention is regarding to solid-state imaging device. A solid-state imaging device consistent with the present invention includes, a plurality of unit cells on a semiconductor substrate of a first conductivity type, each unit cell including a photoelectric conversion unit comprising a photodiode having a diffusion layer of a second conductivity type and a signal scanning circuit unit; a trench isolation region for isolating the photoelectric conversion unit from the signal scanning circuit unit, the trench isolation region being formed in the semiconductor substrate;a first element-isolating diffusion layer of the first conductivity type formed under a bottom face of the trench isolation region down to a position deeper than the diffusion layer of the photodiode from the surface of the semiconductor substrate.
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公开(公告)号：US20060082669A1
公开(公告)日：2006-04-20
申请号：US11251882
申请日：2005-10-18
申请人： Ikuko Inoue , Hirofumi Yamashita , Nagataka Tanaka , Hisanori Ihara , Tetsuya Yamaguchi , Hiroshige Goto
发明人： Ikuko Inoue , Hirofumi Yamashita , Nagataka Tanaka , Hisanori Ihara , Tetsuya Yamaguchi , Hiroshige Goto
IPC分类号： H04N5/335
CPC分类号： H04N5/335 , H01L27/14632 , H01L27/14636 , H01L27/14643
摘要： Each of the unit cells provided on a semiconductor substrate of a solid-state imaging device comprises a first p-type well which isolates the semiconductor substrate into an n-type photoelectric conversion region, a second p-type well which is formed in the surface of the photoelectric conversion region and in which a signal scanning circuit section is formed, and a signal storage section which is comprised of a highly doped n-type layer which is formed in the surface of the photoelectric conversion region apart from the second p-type well and higher in impurity concentration than the photoelectric conversion region. The signal storage section having its part placed under a signal readout gate adapted to transfer a packet of signal charge from the storage section to the signal scanning circuit section and its part at which the potential becomes deepest located under the readout gate.
摘要翻译： 设置在固态成像器件的半导体衬底上的每个单元电池包括将半导体衬底隔离成n型光电转换区域的第一p型阱，形成在表面的第二p型阱 的光电转换区域，并且其中形成信号扫描电路部分的信号存储部分，以及形成在光电转换区域与第二p型光电转换区域的表面中的高掺杂n型层的信号存储部分 杂质浓度高于光电转换区。 信号存储部分，其部分放置在信号读出门的下面，适于将信号电荷的分组从存储部分传送到信号扫描电路部分，并且其部分位于读出栅极下方的最深处。
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公开(公告)号：US20050077830A1
公开(公告)日：2005-04-14
申请号：US10502892
申请日：2003-07-17
IPC分类号： F21S2/00 , F21Y103/00 , H01J61/067 , H01J61/16 , H01J61/72 , H01J17/20 , H01J61/12
CPC分类号： H01J61/72 , H01J61/067
摘要： A low-pressure discharge lamp (1) is provided that includes a glass tube (2) having an inner diameter in a range of 1 to 5 mm and a pair of electrodes (3) disposed at end portions in the glass tube (2). The pair of electrodes (3) contain at least one transition metal selected from transition metals of Groups IV to VI. Mercury and a rare gas containing argon and neon are sealed in an inner portion of the glass tube (2). A relationship between a cathode glow discharge density J and a composition index α of the sealed rare gas of the low-pressure discharge lamp (1) satisfies the following expression α≦J=I/(S·P2)≦1.5α (where S represents an effective discharge surface area (mm2) of an electrode, I represents a RMS lamp current (mA), P represents a pressure (kPa) of a sealed rare gas, and α represents a composition index of a sealed rare gas that is a constant expressed by α=(90.5A+3.4N)×10−3 when a total of a composition ratio A of argon and a composition ratio N of neon is expressed by A+N=1). Thus, sputtering of a small-sized electrode is suppressed thereby to suppress consumption of a rare gas sealed in a lamp so as to increase a life time, and a decrease of an emitted luminous flux is prevented.
摘要翻译： 提供一种低压放电灯（1），其包括内径为1〜5mm的玻璃管（2）和设置在玻璃管（2）的端部的一对电极（3） 。 该对电极（3）含有至少一种选自IV至VI族过渡金属的过渡金属。 汞和含有氩气和氖气的稀有气体密封在玻璃管（2）的内部。 阴极辉光放电密度J与低压放电灯（1）的密封稀有气体的成分指数α之间的关系满足以下表达式α<= J = I /（SP <2>）<= 1.5alpha （其中S表示电极的有效放电表面积（mm 2），I表示RMS灯电流（mA），P表示密封稀有气体的压力（kPa），α表示组成指数 当氩的组成比A和氖的组成比N的总和由A + N = 1表示时，由α=（90.5A + 3.4N）×10 -3表示的常数的密封稀有气体。 因此，抑制了小尺寸电极的溅射，从而抑制了密封在灯中的稀有气体的消耗，从而延长了使用寿命，并且防止了发射光束的减少。
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公开(公告)号：US20050012839A1
公开(公告)日：2005-01-20
申请号：US10916409
申请日：2004-08-12
IPC分类号： H01L27/146 , H04N5/335 , H04N5/357 , H04N5/361 , H04N5/363 , H04N5/369 , H04N5/374 , H04N5/3745 , H04N5/376 , H04N5/378
CPC分类号： H04N5/3658 , H01L27/14609 , H01L27/14643 , H04N5/3575 , H04N5/365 , H04N5/374 , H04N5/3745 , H04N5/378
摘要： An MOS-type solid-state imaging apparatus includes an imaging region formed by two-dimensionally arranging unit cells serving as photoelectric conversion portions on a semiconductor substrate, a plurality of vertical address lines arranged in a row direction of the imaging region to select a row of unit cells to be addressed, a plurality of vertical signal lines arranged in a column direction of the imaging region to read out signals from the unit cells in each column, a plurality of load transistors each connected to one end of each of the vertical signal lines, and a plurality of horizontal selection transistors each connected to the other end of each of the vertical signal lines. In this apparatus, each unit cell includes a photodiode serving as a photoelectric conversion portion, an amplification transistor having a gate to which an output from the photodiode is supplied, and a source and a drain respectively connected to the vertical signal line and the vertical address line, an address capacitor connected between the gate of the amplification transistor and the vertical address line, and a reset transistor connected in parallel with the address capacitor.
摘要翻译： MOS型固态成像装置包括：通过二维排列在半导体衬底上作为光电转换部分的单位单元形成的成像区域，沿着成像区域的行方向布置的多个垂直地址线，以选择行 要被寻址的单位单元，沿着成像区域的列方向布置的多条垂直信号线，以从每列中的单位单元读出信号;多个负载晶体管，每个连接到每个垂直信号的一端 线，以及多个水平选择晶体管，每个连接到每个垂直信号线的另一端。 在该装置中，每个单位单元包括用作光电转换部分的光电二极管，具有栅极的放大晶体管，来自光电二极管的输出端分别连接到垂直信号线和垂直地址的源极和漏极 连接在放大晶体管的栅极和垂直地址线之间的地址电容器，以及与地址电容器并联连接的复位晶体管。
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公开(公告)号：US06570222B2
公开(公告)日：2003-05-27
申请号：US09801919
申请日：2001-03-09
IPC分类号： H01L2701
CPC分类号： H01L27/14689 , H01L27/14609 , H01L27/14623 , H01L27/14654
摘要： A readout gate electrode is selectively formed on a silicon substrate. An N-type drain region is formed at one end of the readout gate electrode, and an N-type signal storage region is formed at the other end thereof. A P+-type surface shield region is selectively epitaxial-grown on the signal storage region, and a silicide block layer is formed on the surface shield region to cover at least part of the signal storage region. A Ti silicide film is selective epitaxial-grown on the drain region.
摘要翻译： 读取栅电极选择性地形成在硅衬底上。 在读出栅电极的一端形成N型漏区，在其另一端形成N型信号存储区。 在信号存储区域上选择性地外延生长P +型表面屏蔽区域，并且在表面屏蔽区域上形成硅化物阻挡层以覆盖信号存储区域的至少一部分。 在该漏极区域上选择性地外延生长Ti硅化物膜。
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