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    Magnetoresistance effect element, magnetic head, magnetic head assembly, magnetic storage system
    77.
    发明授权
    Magnetoresistance effect element, magnetic head, magnetic head assembly, magnetic storage system 失效
    磁阻效应元件，磁头，磁头组件，磁存储系统

    公开(公告)号：US07738220B1

    公开(公告)日：2010-06-15

    申请号：US11779034

    申请日：2007-07-17

    申请人： Hideaki Fukuzawa ,  Yuzo Kamiguchi ,  Katsuhiko Koui ,  Shin-ichi Nakamura ,  Hitoshi Iwasaki ,  Kazuhiro Saito ,  Hiromi Fuke ,  Masatoshi Yoshikawa ,  Susumu Hashimoto ,  Masashi Sahashi

    发明人： Hideaki Fukuzawa ,  Yuzo Kamiguchi ,  Katsuhiko Koui ,  Shin-ichi Nakamura ,  Hitoshi Iwasaki ,  Kazuhiro Saito ,  Hiromi Fuke ,  Masatoshi Yoshikawa ,  Susumu Hashimoto ,  Masashi Sahashi

    IPC分类号： G11B5/39

    CPC分类号： B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3932 ,  G11B5/66 ,  G11B2005/3996 ,  Y10T428/1121

    摘要： A magnetoresistance effect element, comprising a nonmagnetic spacer layer, first and second ferromagnetic layers separated by the nonmagnetic spacer layer, the first ferromagnetic layer having a magnetization direction at an angle relative to a magnetization direction of the second ferromagnetic layer at zero applied magnetic field, the magnetization of the first ferromagnetic layer freely rotating in a magnetic field signal, a magnetoresistance effect-improving layer comprising a plurality of metal films and disposed in contact with the first ferromagnetic layer so that the first ferromagnetic layer is disposed between the nonmagnetic spacer layer and the magnetoresistance effect-improving layer, one of the plurality of metal films disposed in contact with the first ferromagnetic layer contains metal element of not solid solution with metal element of the first ferromagnetic layer and a nonmagnetic underlayer or a nonmagnetic protecting layer disposed in contact with the magnetoresistance effect-improving layer so that the magnetoresistance effect-improving layer is disposed between the first ferromagnetic layer and the nonmagnetic underlayer or the nonmagnetic protecting layer.

    摘要翻译： 一种磁阻效应元件，包括非磁性间隔层，由非磁性间隔层隔开的第一和第二铁磁层，第一铁磁层具有相对于第二铁磁层在零施加磁场的磁化方向的一个角度的磁化方向， 在磁场信号中自由旋转的第一铁磁层的磁化，包含多个金属膜并与第一铁磁层接触设置的磁阻效应改善层，使得第一铁磁层设置在非磁性间隔层和 设置成与第一铁磁层接触的多个金属膜中的一个的磁阻效应改善层包含不是第一铁磁层的金属元素的非固溶金属元素和非磁性底层或与非磁性保护层接触的非磁性保护层 磁阻 使得磁阻效应改善层设置在第一铁磁层和非磁性底层或非磁性保护层之间。

    MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC HEAD, AND MAGNETIC REPRODUCING APPARATUS
    79.
    发明申请
    MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC HEAD, AND MAGNETIC REPRODUCING APPARATUS 审中-公开
    磁阻效应元件，磁头和磁力再生装置

    公开(公告)号：US20070259213A1

    公开(公告)日：2007-11-08

    申请号：US11741900

    申请日：2007-04-30

    申请人： Susumu HASHIMOTO ,  Katsuhiko Koui ,  Masashi Sahashi ,  Hitoshi Iwasaki

    发明人： Susumu HASHIMOTO ,  Katsuhiko Koui ,  Masashi Sahashi ,  Hitoshi Iwasaki

    IPC分类号： G11B5/39

    CPC分类号： H01L43/08 ,  G11B5/3906 ,  H01L43/12 ,  Y10T428/1121

    摘要： A magnetoresistance effect element comprises: a magnetoresistance effect film, a pair of electrodes, and a phase separation layer. The magnetoresistance effect film includes a first ferromagnetic layer whose direction of magnetization is pinned substantially in one direction, a second ferromagnetic layer whose direction of magnetization changes in response to an external magnetic field, and an intermediate layer provided between the first and second ferromagnetic layers. The pair of electrodes are electrically coupled to the magnetoresistance effect film and configured to supply a sense current perpendicularly to a film plane of the magnetoresistance effect film. The phase separation layer is provided between the pair of electrodes. The phase separation layer has a first phase and a second phase formed by a phase separation in a solid phase from an alloy including a plurality of elements. One of the first and second phases includes at least one element selected from the group consisting of oxygen, nitrogen, fluorine and carbon in higher concentration than other of the first and second phases.

    摘要翻译： 磁阻效应元件包括：磁阻效应膜，一对电极和相分离层。 磁阻效应膜包括其磁化方向基本上被固定在一个方向上的第一铁磁层，其磁化方向响应于外部磁场而变化的第二铁磁性层和设置在第一和第二铁磁层之间的中间层。 一对电极电耦合到磁阻效应膜并且被配置为提供垂直于磁阻效应膜的膜平面的感测电流。 相分离层设置在该对电极之间。 相分离层具有通过从包含多个元素的合金固相中相分离而形成的第一相和第二相。 第一和第二相中的一个包括选自氧，氮，氟和碳中的至少一种元素，其浓度高于第一相和第二相中的其它相。