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    SEMICONDUCTOR DEVICE STRUCTURES AND THE SEPARATING METHODS THEREOF
    71.
    发明申请
    SEMICONDUCTOR DEVICE STRUCTURES AND THE SEPARATING METHODS THEREOF 有权
    半导体器件结构及其分离方法

    公开(公告)号：US20120313249A1

    公开(公告)日：2012-12-13

    申请号：US13490992

    申请日：2012-06-07

    申请人： Shih-I CHEN ,  Ching-Pei Lin ,  Tzu-Chieh Hsu ,  Chia-Liang Hsu

    发明人： Shih-I CHEN ,  Ching-Pei Lin ,  Tzu-Chieh Hsu ,  Chia-Liang Hsu

    IPC分类号： H01L21/78 ,  H01L23/48

    CPC分类号： H01L33/0095 ,  H01L21/78 ,  H01L2224/16225 ,  H01L2924/181 ,  H01L2924/00012

    摘要： A method of separating semiconductor device structures comprises steps of providing a substrate having a first surface and a second surface opposite to the first surface; forming a plurality of semiconductor epitaxial stacks on the first surface; forming a patterned resist layer covering the semiconductor epitaxial stacks and exposing part of the first surface, or covering the second surface corresponding to the semiconductor epitaxial stacks; performing a physical etching process to directly server the substrate apart from an area of the first surface or the second surface not covered by the patterned resist layer; and separating the semiconductor epitaxial stacks to form a plurality of semiconductor device structures.

    摘要翻译： 分离半导体器件结构的方法包括提供具有第一表面和与第一表面相对的第二表面的衬底的步骤; 在所述第一表面上形成多个半导体外延堆叠; 形成覆盖所述半导体外延叠层并暴露所述第一表面的一部分或覆盖对应于所述半导体外延叠层的所述第二表面的图案化抗蚀剂层; 进行物理蚀刻处理以直接地将所述基板服务于所述第一表面或未被所述图案化抗蚀剂层覆盖的第二表面的区域; 以及分离半导体外延叠层以形成多个半导体器件结构。