摘要:
Biochip for capacitive stimulation and/or detection of biological tissues. The biochip has a carrier structure, at least one stimulation and/or sensor device, which is arranged in or at the carrier structure, and at least one dielectric layer, one layer area of which is arranged at the stimulation and/or sensor device and the opposite layer area of which forms a stimulation and/or sensor area for capacitive simulation and/or detection of biological tissues, wherein the dielectric layer comprises TiO2.
摘要:
Circuit arrangement having a sensor electrode, a first circuit unit, which is electrically coupled to the sensor electrode, and a second circuit unit, which has a first capacitor. The first circuit unit holds an electrical potential of the sensor electrode in a predetermined first reference range around a predetermined electrical desired potential by coupling the first capacitor and the sensor electrode such that there is a matching of their electrical potentials. If the second circuit unit detects the electrical potential of the first capacitor being outside a second reference range, the second circuit unit brings the first capacitor to a first electrical reference potential.
摘要:
A circuit configuration for assessing capacitances in a matrix, which has a number of rows with at least one capacitance in at least one dimension, includes a test arm connected to first electrodes of each of the capacitances to be assessed and by which two different potentials can be applied to the first electrodes, a measurement arm connected to second electrodes of each of the capacitances to be assessed and that has a first measurement path and a second measurement path connected to a common potential. The first measurement path has an instrument for assessing the capacitances and the first and second measurement paths can be connected to the second electrodes. The circuit configuration has a drive device that connects each of the capacitances to be assessed individually to the two different potentials.
摘要:
Biosensor circuit arrangement including a substrate, a sensor element formed in or on a surface region of the substrate with a physical parameter, which is coupled to a substance to be examined, the type of coupling having a resistive component, the sensor element having an electrically conductive sensor electrode that is coupled to the substance to be examined, the sensor element having a measuring transistor the gate terminal of which is coupled to the electrically conductive sensor electrode, and the physical parameter being the threshold voltage of the measuring transistor, and a calibration device formed in or on the substrate, the calibration device being set up such that it is used to at least partly compensate for an alteration of the value of the physical parameter of the sensor element.
摘要:
A differential sense amplifier for sensing data stored in a plurality of memory cells of a memory cell array, including a first CMOS inverter having an output connected to a first bit line and an input connected to a second bit line complementary to the first bit line, and a second CMOS inverter having an output connected to the second bit line and an input connected to the first bit line. Each CMOS inverter includes a pull-up transistor and a pull-down transistor, and the sense amplifier has a pair of pass-gate transistors arranged to connect the first and second bit lines to a first and a second global bit lines. Advantageously, the pass-gate transistors are constituted by the pull-up transistors or the pull-up transistors.
摘要:
A differential sense amplifier for sensing data stored in a plurality of memory cells of a memory cell array, including a first CMOS inverter having an output connected to a first bit line (BL) and an input connected to a second bit line complementary to the first bit line and a second CMOS inverter having an output connected to the second bit line (/BL) and an input connected to the first bit line. Each CMOS inverter includes pull-up and pull-down transistors, wherein the sources of either of the pull-up transistors or the pull-down transistors are electrically coupled and connected to a pull-up voltage source or a pull-down voltage source without an intermediate transistor between the sources of the transistors and the voltage source.
摘要:
A sensor arrangement including a control circuit is disclosed. In at least one embodiment, at least one sensor electrode can be charged and/or discharged therewith and a comparator unit for the comparison of a provided voltage for the at least one electrode with a reference voltage. A duration necessary for the charging/discharging of the at least one sensor electrode is determined, whereby, from the determined duration, it is determined whether a sensor event, in the form of a hybridization between trap molecules and the particles for recording, has occurred.
摘要:
A semiconductor memory has a plurality of read amplifiers to which a pair each of two complementary bit lines is connected, wherein the semiconductor memory includes at least one switching element each for each bit line, by which at least a partial section of the bit line may be electrically decoupled from the read amplifier, and wherein the semiconductor memory controls the first switching element so that the first switching element, when reading out and/or refreshing any memory cell connected to the bit line, temporarily electrically decouples at least the partial section of the bit line from the read amplifier.
摘要:
A circuit arrangement, an electrochemical sensor, a sensor arrangement, and a method for processing a current signal provided by a sensor electrode are disclosed. The circuit arrangement includes a sensor electrode, a first circuit unit, electrically coupled to the sensor electrode and a second circuit unit, including a first capacitor, whereby the first circuit arrangement is embodied to hold the electrical potential of the sensor electrode in a given first reference range about a set electrical potential and, when the sensor electrode potential falls outside the first reference range, the first capacitor and the sensor electrode are coupled such that a matching of the electrical potentials is possible. The second circuit unit is embodied such that, when the electrical potential of the first capacitor falls outside a second reference range, this event is detected and the first capacitor brought to a first electrical reference potential.
摘要:
Apparatus for measuring neural network activity with a textured semiconductor substrate. Sensor elements have a respective detection electrode on the substrate surface for detecting neural network signals, and the detected neural signals are a basis for outputting electrical sensor output signals via respective sensor element outputs. Each amplifier element has an input and an output. Each of the sensor elements has associated therewith one of the amplifier elements whose input is connected to the sensor output of the respective sensor element. The amplified sensor output signal is output the amplifier output as an amplifier output signal. An activity evaluator has an input, which is connected to at least one of the amplifier outputs, and an output. The activity evaluation device produces an activity signal, which is a measure of activity of the neural network, based on the amplifier output signal, and outputs the amplifier output signal via the evaluation output.