公开(公告)号：US20220123149A1

公开(公告)日：2022-04-21

申请号：US17565771

申请日：2021-12-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Masashi TSUBUKU ,  Kosei NODA

IPC: H01L29/786 ,  H01L27/12 ,  H01L27/02

Abstract: A logic circuit includes a thin film transistor having a channel formation region formed using an oxide semiconductor, and a capacitor having terminals one of which is brought into a floating state by turning off the thin film transistor. The oxide semiconductor has a hydrogen concentration of 5×1019 (atoms/cm3) or less and thus substantially serves as an insulator in a state where an electric field is not generated. Therefore, off-state current of a thin film transistor can be reduced, leading to suppressing the leakage of electric charge stored in a capacitor, through the thin film transistor. Accordingly, a malfunction of the logic circuit can be prevented. Further, the excessive amount of current which flows in the logic circuit can be reduced through the reduction of off-state current of the thin film transistor, resulting in low power consumption of the logic circuit.

公开(公告)号：US20220093452A1

公开(公告)日：2022-03-24

申请号：US17539469

申请日：2021-12-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yutaka SHIONOIRI ,  Kosei NODA

IPC: H01L21/762 ,  H01L27/12

Abstract: An object is to provide a semiconductor device with reduced standby power. A transistor including an oxide semiconductor as an active layer is used as a switching element, and supply of a power supply voltage to a circuit in an integrated circuit is controlled by the switching element. Specifically, when the circuit is in an operation state, supply of the power supply voltage to the circuit is performed by the switching element, and when the circuit is in a stop state, supply of the power supply voltage to the circuit is stopped by the switching element. In addition, the circuit supplied with the power supply voltage includes a semiconductor element which is a minimum unit included in an integrated circuit formed using a semiconductor. Further, the semiconductor included in the semiconductor element contains silicon having crystallinity (crystalline silicon).

公开(公告)号：US20210126114A1

公开(公告)日：2021-04-29

申请号：US17073520

申请日：2020-10-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yuta ENDO ,  Toshinari SASAKI ,  Kosei NODA

IPC: H01L29/66 ,  H01L29/786 ,  H01L21/425 ,  H01L21/477 ,  H01L29/423 ,  H01L29/51 ,  H01L21/02

Abstract: A semiconductor device is manufactured using a transistor in which an oxide semiconductor is included in a channel region and variation in electric characteristics due to a short-channel effect is less likely to be caused. The semiconductor device includes an oxide semiconductor film having a pair of oxynitride semiconductor regions including nitrogen and an oxide semiconductor region sandwiched between the pair of oxynitride semiconductor regions, a gate insulating film, and a gate electrode provided over the oxide semiconductor region with the gate insulating film positioned therebetween. Here, the pair of oxynitride semiconductor regions serves as a source region and a drain region of the transistor, and the oxide semiconductor region serves as the channel region of the transistor.

公开(公告)号：US20190386141A1

公开(公告)日：2019-12-19

申请号：US16555275

申请日：2019-08-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Masashi TSUBUKU ,  Kosei NODA

IPC: H01L29/786 ,  H01L27/02 ,  H01L27/12

Abstract: A logic circuit includes a thin film transistor having a channel formation region formed using an oxide semiconductor, and a capacitor having terminals one of which is brought into a floating state by turning off the thin film transistor. The oxide semiconductor has a hydrogen concentration of 5×1019 (atoms/cm3) or less and thus substantially serves as an insulator in a state where an electric field is not generated. Therefore, off-state current of a thin film transistor can be reduced, leadind to suppressing the leakage of electric charge stored in a capacitor, through the thin film transistor. Accordingly, a malfunction of the logic circuit can be prevented. Further, the excessive amount of current which flows in the logic circuit can be reduced through the reduction of off-state current of the thin film transistor, resulting in low power consumption of the logic circuit.

公开(公告)号：US20180090086A1

公开(公告)日：2018-03-29

申请号：US15824343

申请日：2017-11-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Ryo ARASAWA ,  Jun KOYAMA ,  Masashi TSUBUKU ,  Kosei NODA

IPC: G09G3/36 ,  H01L29/786 ,  G02F1/1335 ,  H01L29/66 ,  H01L29/45 ,  H01L29/423 ,  H01L29/24 ,  H01L27/12 ,  H01L21/477 ,  H01L21/467 ,  H01L21/02 ,  G02F1/1343 ,  G02F1/1368

Abstract: In a liquid crystal display device including a plurality of pixels in a display portion and configured to performed display in a plurality of frame periods, each of the frame periods includes a writing period and a holding period, and after an image signal is input to each of the plurality of pixels in the writing period, a transistor included in each of the plurality of pixels is turned off and the image signal is held for at least 30 seconds in the holding period. The pixel includes a semiconductor layer including an oxide semiconductor layer, and the oxide semiconductor layer has a carrier concentration of less than 1×1014/cm3.

公开(公告)号：US20170229585A1

公开(公告)日：2017-08-10

申请号：US15496014

申请日：2017-04-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Yukie SUZUKI ,  Kosei NODA ,  Yoshiaki OIKAWA

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/78693 ,  H01L27/1225 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78621 ,  H01L29/7869

Abstract: A metal element of a metal film is introduced into the oxide semiconductor film by performing heat treatment in the state where the oxide semiconductor film is in contact with the metal film, so that a low-resistance region having resistance lower than that of a channel formation region is formed. A region of the metal film, which is in contact with the oxide semiconductor film, becomes a metal oxide insulating film by the heat treatment. After that, an unnecessary metal film is removed. Thus, the metal oxide insulating film can be formed over the low-resistance region.

公开(公告)号：US20170092776A1

公开(公告)日：2017-03-30

申请号：US15372493

申请日：2016-12-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Hiroyuki MIYAKE ,  Kei TAKAHASHI ,  Kouhei TOYOTAKA ,  Masashi TSUBUKU ,  Kosei NODA ,  Hideaki KUWABARA

IPC: H01L29/786 ,  H01L29/24 ,  G06K19/077 ,  H01L29/66 ,  H01L21/8236 ,  H01L23/66 ,  H01L27/088

CPC classification number: H01L29/26 ,  G06K19/07758 ,  G11C7/00 ,  G11C19/28 ,  H01L21/8236 ,  H01L23/66 ,  H01L27/0883 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78609 ,  H01L29/7869 ,  H01L29/78696 ,  H01L2223/6677 ,  H02M3/07

Abstract: An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit such as an LSI, a CPU, or a memory is manufactured using a thin film transistor in which a channel fog nation region is formed using an oxide semiconductor which becomes an intrinsic or substantially intrinsic semiconductor by removing impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than that of a silicon semiconductor. With use of a thin film transistor using a highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device with low power consumption due to leakage current can be realized.

公开(公告)号：US20170040350A1

公开(公告)日：2017-02-09

申请号：US15332323

申请日：2016-10-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Masashi TSUBUKU ,  Kosei NODA

IPC: H01L27/12 ,  H03K17/16 ,  G09G3/20 ,  G11C19/28

CPC classification number: H01L27/1255 ,  G09G3/20 ,  G09G3/2092 ,  G09G3/3233 ,  G09G3/3291 ,  G09G3/36 ,  G09G3/3648 ,  G09G2300/0439 ,  G09G2300/08 ,  G09G2300/0842 ,  G09G2310/0267 ,  G09G2310/0275 ,  G09G2310/0286 ,  G09G2310/08 ,  G11C19/184 ,  G11C19/28 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/7869 ,  H03K17/161 ,  H03K19/00315 ,  H03K19/096

Abstract: To reduce a leakage current of a transistor so that malfunction of a logic circuit can be suppressed. The logic circuit includes a transistor which includes an oxide semiconductor layer having a function of a channel formation layer and in which an off current is 1×10−13 A or less per micrometer in channel width. A first signal, a second signal, and a third signal that is a clock signal are input as input signals. A fourth signal and a fifth signal whose voltage states are set in accordance with the first to third signals which have been input are output as output signals.

Abstract translation: 为了减小晶体管的漏电流，可以抑制逻辑电路的故障。 逻辑电路包括晶体管，其包括具有沟道形成层的功能的氧化物半导体层，并且其中截止电流在沟道宽度中为每微米1×10-13A或更小。 作为时钟信号的第一信号，第二信号和第三信号被输入作为输入信号。 作为输出信号输出第四信号和第五信号，其电压状态根据输入的第一至第三信号而被设定。

公开(公告)号：US20160365454A1

公开(公告)日：2016-12-15

申请号：US15245268

申请日：2016-08-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kosei NODA ,  Satoshi TORIUMI ,  Kazuki TANEMURA

IPC: H01L29/786 ,  H01L29/06 ,  H01L29/49

CPC classification number: H01L29/7869 ,  H01L29/0692 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78606

Abstract: Electrical characteristics of a semiconductor device including the oxide semiconductor are improved. Furthermore, a highly reliable transistor with small variation in electrical characteristics is manufactured. An oxynitride insulating film functioning as a base insulating film and a transistor in contact with the oxynitride insulating film are provided. The transistor includes an oxide semiconductor film in contact with the oxynitride insulating film functioning as a base insulating film. The total amount of gas having a mass-to-charge ratio of 30 released from the oxynitride insulating film by heat treatment and double of the amount of a gas having a mass-to-charge ratio of 32 released from the oxynitride insulating film by heat treatment is greater than or equal to 5×1015/cm2 and less than or equal to 5×1016/cm2, or greater than or equal to 5×1015/cm2 and less than or equal to 3×1016/cm2.

Abstract translation: 包括氧化物半导体的半导体器件的电特性得到改善。 此外，制造具有小的电特性变化的高度可靠的晶体管。 提供用作基底绝缘膜的氧氮化物绝缘膜和与氧氮化物绝缘膜接触的晶体管。 晶体管包括与用作基极绝缘膜的氧氮化物绝缘膜接触的氧化物半导体膜。 通过热处理从氮氧化物绝缘膜释放的质荷比为30的气体的总量和通过热量从氮氧化物绝缘膜释放的质荷比为32的气体量的两倍 处理量大于或等于5×10 15 / cm 2且小于或等于5×10 16 / cm 2，或大于或等于5×10 15 / cm 2且小于或等于3×10 16 / cm 2。

公开(公告)号：US20160351693A1

公开(公告)日：2016-12-01

申请号：US15232092

申请日：2016-08-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Toshinari SASAKI ,  Kosei NODA

IPC: H01L29/66 ,  H01L21/385 ,  H01L29/786 ,  H01L21/02

CPC classification number: H01L29/66969 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/385 ,  H01L27/1225 ,  H01L29/7869

Abstract: It is an object to provide a semiconductor device including an oxide semiconductor, which has stable electric characteristics and high reliability. An oxide semiconductor film serving as a channel formation region of a transistor is formed by a sputtering method at a temperature higher than 200° C., so that the number of water molecules eliminated from the oxide semiconductor film can be 0.5/nm3 or less according to thermal desorption spectroscopy. A substance including a hydrogen atom such as hydrogen, water, a hydroxyl group, or hydride which causes variation in the electric characteristics of a transistor including an oxide semiconductor is prevented from entering the oxide semiconductor film, whereby the oxide semiconductor film can be highly purified and made to be an electrically i-type (intrinsic) semiconductor.

Abstract translation: 本发明的目的是提供一种具有稳定的电特性和高可靠性的氧化物半导体的半导体装置。 通过溅射法在高于200℃的温度下形成用作晶体管的沟道形成区的氧化物半导体膜，从氧化物半导体膜中除去的水分子数可以为0.5nm / nm 3以下 到热解吸光谱。 包含氢原子的物质，例如氢，水，羟基或氢化物，其导致包括氧化物半导体的晶体管的电特性发生变化，从而防止氧化物半导体膜进入氧化物半导体膜，由此氧化物半导体膜可以被高度纯化 并制成电i型（本征）半导体。