公开(公告)号：US20250151538A1

公开(公告)日：2025-05-08

申请号：US18833581

申请日：2023-02-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasuharu HOSAKA ,  Yukinori SHIMA ,  Masami JINTYOU ,  Masataka NAKADA ,  Junichi KOEZUKA ,  Kenichi OKAZAKI

IPC: H10K59/124 ,  H10K59/12 ,  H10K59/121

Abstract: A semiconductor device including a miniaturized transistor is provided. The semiconductor device includes a semiconductor layer, a first conductive layer, a second conductive layer, a third conductive layer, a first insulating layer, and a second insulating layer. The first insulating layer is provided over the first conductive layer. The first insulating layer has a first opening reaching the first conductive layer. The semiconductor layer is in contact with a top surface and a side surface of the first insulating layer and a top surface of the first conductive layer. The second conductive layer is provided over the semiconductor layer. The second conductive layer includes a second opening in a region overlapping with the first opening. The second insulating layer is provided over the semiconductor layer and the second conductive layer. The third conductive layer is provided over the second insulating layer. The first insulating layer has a stacked-layer structure of a third insulating layer and a fourth insulating layer over the third insulating layer. The fourth insulating layer includes a region having a film density higher than that of the third insulating layer.

公开(公告)号：US20250151333A1

公开(公告)日：2025-05-08

申请号：US19017973

申请日：2025-01-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Yasuharu HOSAKA ,  Mitsuo MASHIYAMA ,  Kenichi OKAZAKI

IPC: H10D30/67 ,  H10D30/01 ,  H10K59/12 ,  H10K59/121

Abstract: A circuit capable of high-speed operation and a pixel are integrally formed over the same substrate. A first metal oxide film, a first metal film, and an island-shaped first resist mask are formed over a first insulating layer. An island-shaped first metal layer and an island-shaped first oxide semiconductor layer are formed and a part of a top surface of the first insulating layer is exposed; then, the first resist mask is removed. A second metal oxide film, a second metal film, and an island-shaped second resist mask are formed over the first metal layer and the first insulating layer. An island-shaped second metal layer and an island-shaped second oxide semiconductor layer are formed; then, the second resist mask is removed. The first metal layer and the second metal layer are removed.

公开(公告)号：US20250147370A1

公开(公告)日：2025-05-08

申请号：US19014390

申请日：2025-01-09

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yasuharu HOSAKA ,  Yukinori SHIMA ,  Kenichi OKAZAKI ,  Shunpei YAMAZAKI

IPC: G02F1/1368 ,  G02F1/1333 ,  G02F1/1335 ,  G02F1/1337 ,  G02F1/1345 ,  G02F1/1362 ,  H10D86/40 ,  H10D86/60

Abstract: The display device includes a first substrate provided with a driver circuit region that is located outside and adjacent to a pixel region and includes at least one second transistor which supplies a signal to the first transistor in each of the pixels in the pixel region, a second substrate facing the first substrate, a liquid crystal layer between the first substrate and the second substrate, a first interlayer insulating film including an inorganic insulating material over the first transistor and the second transistor, a second interlayer insulating film including an organic insulating material over the first interlayer insulating film, and a third interlayer insulating film including an inorganic insulating material over the second interlayer insulating film. The third interlayer insulating film is provided in part of an upper region of the pixel region, and has an edge portion on an inner side than the driver circuit region.

公开(公告)号：US20250008780A1

公开(公告)日：2025-01-02

申请号：US18707700

申请日：2022-11-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masataka NAKADA ,  Masahiro KATAYAMA ,  Rai SATO ,  Yasuharu HOSAKA ,  Toshimitsu OBONAI ,  Masayoshi DOBASHI ,  Koji KUSUNOKI ,  Tomonori NAKAYAMA

IPC: H10K59/122 ,  H10K59/131

Abstract: A display apparatus with high resolution is provided. The display apparatus includes a transistor, a light-emitting device, a first insulating layer, a second insulating layer, and a first conductive layer. The transistor includes a semiconductor layer and a second conductive layer electrically connected to the semiconductor layer. The light-emitting device includes a pixel electrode. The first insulating layer is provided over the transistor and includes a first opening reaching the second conductive layer. The first conductive layer covers the first opening. The second insulating layer is provided over the first insulating layer and includes a second opening in a region overlapping with the first opening. The pixel electrode covers a top surface of the second insulating layer and the second opening. The pixel electrode is electrically connected to the second conductive layer through the first conductive layer. An end portion of the first insulating layer is positioned over the second conductive layer. An end portion of the second insulating layer is positioned over the first conductive layer. An end portion of the second insulating layer is positioned outward from the end portion of the first insulating layer.

公开(公告)号：US20240266443A1

公开(公告)日：2024-08-08

申请号：US18612525

申请日：2024-03-21

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yasuharu HOSAKA ,  Yukinori SHIMA ,  Masataka NAKADA ,  Masami JINTYOU

IPC: H01L29/786 ,  G02F1/1368 ,  H01L21/426 ,  H01L27/12 ,  H01L29/04 ,  H01L29/423 ,  H01L29/49 ,  H01L29/66 ,  H10K50/115 ,  H10K59/12 ,  H10K59/40

CPC classification number: H01L29/7869 ,  H01L29/04 ,  H01L29/423 ,  H01L29/42384 ,  H01L29/49 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78633 ,  H01L29/78648 ,  G02F1/1368 ,  H01L21/426 ,  H01L27/1225 ,  H10K50/115 ,  H10K59/12 ,  H10K59/40

Abstract: A semiconductor device that includes a transistor is provided. The transistor includes a first conductive film that functions as a first gate electrode, a first gate insulating film, a first oxide semiconductor film that includes a channel region, a second gate insulating film, and a second oxide semiconductor film and a second conductive film that function as a second gate electrode. The second oxide semiconductor film includes a region higher in carrier density than the first oxide semiconductor film. The second conductive film includes a region in contact with the first conductive film.

公开(公告)号：US20240213335A1

公开(公告)日：2024-06-27

申请号：US18288599

申请日：2022-04-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasuharu HOSAKA ,  Yasutaka NAKAZAWA ,  Takashi SHIRAISHI ,  Rai SATO ,  Kenichi OKAZAKI

IPC: H01L29/417 ,  H01L29/45 ,  H01L29/66 ,  H01L29/786 ,  H10K59/12 ,  H10K59/121

CPC classification number: H01L29/41733 ,  H01L29/66969 ,  H01L29/7869 ,  H10K59/1201 ,  H10K59/1213 ,  H01L29/45

Abstract: A miniaturized semiconductor device is provided. The semiconductor device includes a semiconductor layer over a substrate, a first conductive layer and a second conductive layer being apart from each other over the semiconductor layer, a mask layer in contact with a top surface of the first conductive layer, a first insulating layer covering the semiconductor layer, the first conductive layer, the second conductive layer, and the mask layer, and a third conductive layer overlapping with the semiconductor layer and being over the first insulating layer. The first insulating layer is in contact with a top surface and a side surface of the mask layer, a side surface of the first conductive layer, a top surface and a side surface of the second conductive layer, and a top surface of the semiconductor layer. The semiconductor device includes a region in which the distance between opposite end portions of the first conductive layer and the second conductive layer is less than or equal to 1 μm.

公开(公告)号：US20230317856A1

公开(公告)日：2023-10-05

申请号：US18132527

申请日：2023-04-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Yasuharu HOSAKA ,  Toshimitsu OBONAI ,  Yasutaka NAKAZAWA ,  Seiji YASUMOTO ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L27/12 ,  H05B33/22

CPC classification number: H01L29/7869 ,  H01L29/78603 ,  H01L29/78696 ,  H01L27/1225 ,  H05B33/22 ,  H10K50/00

Abstract: A semiconductor device with favorable electrical characteristics is provided. A highly reliable semiconductor device is provided. A semiconductor device with stable electrical characteristics is provided. A semiconductor device includes a first insulating layer, a second insulating layer, a semiconductor layer, and a first conductive layer. The semiconductor layer, the second insulating layer, and the first conductive layer are stacked in this order over the first insulating layer. The second insulating layer has a stacked-layer structure in which a first insulating film, a second insulating film, and a third insulating film are stacked in this order. The first insulating film, the second insulating film, and the third insulating film each contain an oxide. The first insulating film includes a portion in contact with the semiconductor layer. The semiconductor layer contains indium, gallium, and oxygen and includes a region with an indium content percentage higher than a gallium content percentage.

公开(公告)号：US20210278922A1

公开(公告)日：2021-09-09

申请号：US17316768

申请日：2021-05-11

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Hajime KIMURA ,  Masami JINTYOU ,  Yasuharu HOSAKA ,  Naoto GOTO ,  Takahiro IGUCHI ,  Daisuke KUROSAKI ,  Junichi KOEZUKA

IPC: G06F3/041 ,  H01L27/12 ,  H01L29/786 ,  H01L29/24 ,  H01L27/32 ,  H01L29/66 ,  G06F3/044

Abstract: A touch panel including an oxide semiconductor film having conductivity is provided. The touch panel includes a transistor, a second insulating film, and a touch sensor. The transistor includes a gate electrode; a gate insulating film; a first oxide semiconductor film; a source electrode and a drain electrode; a first insulating film; and a second oxide semiconductor film. The second insulating film is over the second oxide semiconductor film so that the second oxide semiconductor film is positioned between the first insulating film and the second insulating film. The touch sensor includes a first electrode and a second electrode. One of the first and second electrodes includes the second oxide semiconductor film.

公开(公告)号：US20210175361A1

公开(公告)日：2021-06-10

申请号：US16768810

申请日：2018-11-28

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Takuya HANDA ,  Yasuharu HOSAKA ,  Shota SAMBONSUGE ,  Yasumasa YAMANE ,  Kenichi OKAZAKI

IPC: H01L29/786 ,  H01L29/24

Abstract: A semiconductor device with improved reliability is provided. The semiconductor device includes a first oxide, a second oxide over the first oxide, a third oxide over the second oxide, and an insulator over the third oxide. The second oxide contains In, an element M (M is Al, Ga, Y, or Sn), and Zn. The first oxide and the third oxide each include a region whose In concentration is lower than that in the second oxide.

公开(公告)号：US20210035816A1

公开(公告)日：2021-02-04

申请号：US17064730

申请日：2020-10-07

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Masami JINTYOU ,  Junichi KOEZUKA ,  Takashi HAMOCHI ,  Yasuharu HOSAKA

IPC: H01L21/385 ,  H01L21/02 ,  H01L21/44 ,  H01L21/443 ,  H01L21/4757 ,  H01L29/04 ,  H01L29/49 ,  H01L29/66 ,  H01L29/786

Abstract: The field-effect mobility and reliability of a transistor including an oxide semiconductor film are improved. Provided is a semiconductor device including an oxide semiconductor film. The semiconductor device includes a first insulating film, an oxide semiconductor film over the first insulating film, a second insulating film and a third insulating film over the oxide semiconductor film, and a gate electrode over the second insulating film. The second insulating film comprises a silicon oxynitride film. When excess oxygen is added to the second insulating film by oxygen plasma treatment, oxygen can be efficiently supplied to the oxide semiconductor film.