公开(公告)号：US11532687B2

公开(公告)日：2022-12-20

申请号：US16880792

申请日：2020-05-21

Applicant: Samsung Display Co., Ltd.

Inventor： Sangwoo Sohn ,  Myounghwa Kim ,  TaeSang Kim ,  Hyungjun Kim ,  Yeon Keon Moon ,  Joon Seok Park ,  Sangwon Shin ,  Jun Hyung Lim ,  Hyelim Choi

IPC: H01L27/32 ,  H01L51/56 ,  H01L51/52 ,  H01L29/786

Abstract: A display panel includes a base layer, a first thin film transistor on the base layer, a second thin film transistor electrically coupled to the first thin film transistor, and a light emitting element electrically coupled to the second thin film transistor. The first thin film transistor includes a first semiconductor pattern on the base layer, a first barrier pattern on the first semiconductor pattern and including a gallium (Ga) oxide and a zinc (Zn) oxide, and a first control electrode on the first barrier pattern and overlapping the first semiconductor pattern. Accordingly, a signal transmission speed of the display panel may be improved, and electrical characteristics and reliability of the thin film transistor included in the display panel may be improved.

公开(公告)号：US11271015B2

公开(公告)日：2022-03-08

申请号：US16876984

申请日：2020-05-18

Applicant: Samsung Display Co., LTD.

Inventor： Joon Seok Park ,  Myoung Hwa Kim ,  Tae Sang Kim ,  Hyung Jun Kim ,  Yeon Keon Moon ,  Geun Chul Park ,  Sang Woo Sohn ,  Jun Hyung Lim ,  Kyung Jin Jeon ,  Hye Lim Choi

IPC: H01L27/12 ,  G02F1/1362 ,  H01L27/32

Abstract: A display device includes a substrate, a buffer layer disposed on the substrate, a first semiconductor layer disposed on the buffer layer and including an oxide semiconductor and a first active layer, a first gate insulating layer disposed on the first semiconductor layer and the buffer layer, a second semiconductor layer disposed on the first gate insulating layer and including an oxide semiconductor, a second active layer, and a first oxide layer on the first active layer, a second gate insulating layer disposed on the second semiconductor layer, a first conductive layer disposed on the second gate insulating layer, an insulating layer disposed on the first conductive layer, a second conductive layer disposed on the insulating layer, a passivation layer disposed on the second conductive layer, and a third conductive layer disposed on the first passivation layer.

公开(公告)号：US11152399B2

公开(公告)日：2021-10-19

申请号：US16453976

申请日：2019-06-26

Applicant: Samsung Display Co., Ltd.

Inventor： Yeon Keon Moon ,  Kano Masataka ,  Myoung Hwa Kim ,  Jun Hyung Lim

IPC: H01L27/12 ,  H01L29/786 ,  G09G3/36

Abstract: A display device in which a display area and a non-display area are defined, the display device including a wiring substrate, the wiring substrate including: a base substrate; a first thin film transistor disposed on the base substrate, located in the non-display area, and including a first gate pattern, a first semiconductor pattern disposed on the first gate pattern, a first source pattern disposed on the first semiconductor pattern, and a first drain pattern disposed on the first semiconductor pattern and spaced apart from the first source pattern; and a second thin film transistor disposed on the base substrate and located in the display area. A first channel width of the first thin film transistor is greater than a first overlap length of the first gate pattern, the first semiconductor pattern, and the first drain pattern.

公开(公告)号：US11138929B2

公开(公告)日：2021-10-05

申请号：US16850775

申请日：2020-04-16

Applicant: Samsung Display Co., LTD.

Inventor： Joon Seok Park ,  Yeon Keon Moon ,  Myoung Hwa Kim ,  Tae Sang Kim ,  Hyung Jun Kim ,  Geun Chul Park ,  Sang Woo Sohn ,  Jun Hyung Lim ,  Kyung Jin Jeon ,  Hye Lim Choi

IPC: G09G3/3225 ,  G09G3/3275 ,  H01L27/32 ,  G09G3/3266 ,  H01L29/66 ,  H01L27/12 ,  H01L29/417 ,  H01L29/786 ,  H01L21/02

Abstract: A display device includes a pixel including a light emitting element connected to a scan line and a data line; a driving transistor that controls a driving current supplied to the light emitting element according to a data voltage applied from the data line. The driving transistor includes a first semiconductor layer, and a first gate electrode disposed on the first semiconductor layer. The display device includes a switching transistor that applies the data voltage to the driving transistor according to a scan signal applied to the scan line. The switching transistor includes a second semiconductor layer, and a second gate electrode disposed on the second semiconductor layer. The display device includes a light blocking layer and a first buffer layer disposed at a lower portion of the driving transistor. The light blocking layer and the first buffer layer do not overlap the switching transistor.

公开(公告)号：US11114521B2

公开(公告)日：2021-09-07

申请号：US16562384

申请日：2019-09-05

Applicant: Samsung Display Co., Ltd.

Inventor： Kyoung Seok Son ,  Myoung Hwa Kim ,  Jay Bum Kim ,  Seung Jun Lee ,  Seung Hun Lee ,  Jun Hyung Lim

IPC: H01L27/12 ,  H01L27/32 ,  G09G3/3258 ,  G09G3/3291 ,  H01L51/52 ,  H01L51/56

Abstract: A display device includes a substrate and a pixel disposed on the substrate. The pixel includes a first transistor, a second transistor electrically connected to the first transistor, a third transistor electrically connected to the first transistor, and a light-emitting diode element electrically connected to at least one of the first transistor and the third transistor. The first transistor includes a first semiconductor member and a first gate electrode. The first semiconductor member includes an oxide semiconductor material. The first gate electrode is disposed between the first semiconductor member and the substrate. The second transistor includes a second semiconductor member and a second gate electrode. The second semiconductor member includes the oxide semiconductor material. The second semiconductor member is disposed between the second gate electrode and the substrate. The third transistor includes a third semiconductor member including silicon.

公开(公告)号：US10916196B2

公开(公告)日：2021-02-09

申请号：US16550966

申请日：2019-08-26

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Yeon Keon Moon ,  Joon Seok Park ,  Kwang Suk Kim ,  Tae Sang Kim ,  Geunchul Park ,  Jun Hyung Lim ,  Kyungjin Jeon

IPC: G09G3/3258 ,  G09G3/3291

Abstract: An organic light emitting display device may include a display panel, a source driving circuit, and a voltage generator. The display panel may include a pixel circuit including a driving transistor to drive an organic light emitting diode. The driving transistor may have four independent terminals including first and second gate electrodes. The source driving circuit may provide a data voltage to the pixel circuit. The voltage generator may apply an independent bias voltage to the second gate electrode of the driving transistor to control a driving voltage range of the driving transistor.

公开(公告)号：US20200234654A1

公开(公告)日：2020-07-23

申请号：US16739012

申请日：2020-01-09

Applicant: Samsung Display Co., Ltd.

Inventor： Myoung Hwa Kim ,  Masataka Kano ,  Yeon Keon Moon ,  Joon Seok Park ,  Jun Hyung Lim ,  Hye Lim Choi

IPC: G09G3/3291 ,  G09G3/3266 ,  H01L51/52 ,  H01L51/56

Abstract: A display device including: a pixel connected to a scan line and a data line intersecting the scan line. The pixel includes a light emitting element and a driving transistor which controls a driving current supplied to the light emitting element according to a data voltage applied from the data line. The driving transistor includes a first active layer including an oxide semiconductor doped with a metal.

公开(公告)号：US20190006450A1

公开(公告)日：2019-01-03

申请号：US15834628

申请日：2017-12-07

Applicant: Samsung Display Co., Ltd. ,  Industry-Academic Cooperation Foundation, Yonsei University

Inventor： Sunhee Lee ,  Hyungjun Kim ,  Jun Hyung Lim ,  Whangje Woo

IPC: H01L27/32 ,  H01L21/02 ,  H01L29/51 ,  H01L51/52 ,  H01L51/56 ,  H01L29/49

Abstract: A method of manufacturing a semiconductor element is provided as follows. A semiconductor layer that has a two-dimensional layered structure is formed on a substrate having a source region, a drain region, and a channel region. A high-k insulating layer is formed on the semiconductor layer by atomic layer deposition using trimethyl aluminum as a precursor and isopropyl alcohol as a reactant gas. A gate electrode is formed in the channel region on the high-k insulating layer. An insulating interlayer is formed on the gate electrode. Source and drain electrodes are formed in the source and drain regions on the insulating interlayer.

公开(公告)号：US09508857B2

公开(公告)日：2016-11-29

申请号：US14635732

申请日：2015-03-02

Applicant: Samsung Display Co., Ltd. ,  Kookmin University Industry Academy Cooperation Foundation

Inventor： Byung Du Ahn ,  Ji Hun Lim ,  Jun Hyung Lim ,  Dae Hwan Kim ,  Jae Hyeong Kim ,  Je Hun Lee ,  Hyun Kwang Jung

IPC: H01L29/786 ,  H01L27/12 ,  H01L21/28

CPC classification number: H01L29/78606 ,  H01L21/28 ,  H01L27/124 ,  H01L29/786 ,  H01L29/78678 ,  H01L29/7869 ,  H01L29/78696

Abstract: A thin film transistor display panel a includes a transparent substrate; a gate electrode positioned on the substrate; a gate insulating layer positioned on the gate electrode; a semiconductor layer positioned on the gate insulating layer and including a channel region; a source electrode and a drain electrode positioned on the semiconductor layer and facing each other; and a passivation layer configured to cover the source electrode, the drain electrode, and the semiconductor layer, wherein the semiconductor layer includes a relatively thick first portion between the source electrode and the gate electrode and a relatively thinner second portion between the drain electrode and the gate electrode overlap, the relatively thick first portion being sufficiently thick to substantially reduce a charge trapping phenomenon that may otherwise occur at a gate electrode to gate dielectric interface if the first portion were as thin as the second portion.

公开(公告)号：US20160013257A1

公开(公告)日：2016-01-14

申请号：US14793966

申请日：2015-07-08

Applicant: Samsung Display Co., Ltd

Inventor： SOYOUNG KOO ,  Myounghwa Kim ,  Sangho Park ,  Jun Hyung Lim ,  Masataka Kano

IPC: H01L27/32 ,  H01L27/12 ,  H01L21/477 ,  H01L29/24 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L27/1262 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02664 ,  H01L21/477 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78693 ,  H01L2227/323

Abstract: A method of manufacturing a thin film transistor and a method of manufacturing a display substrate having the same are disclosed. In one aspect, the method of manufacturing a thin film transistor comprises forming an oxide semiconductor layer over a substrate, plasma-treating the oxide semiconductor layer with a plasma generated from a nitrogen gas or a nitric oxide gas so as to decrease defects in the oxide semiconductor layer, and annealing the plasma-treated oxide semiconductor layer to form a channel layer.

Abstract translation: 公开了一种薄膜晶体管的制造方法及其制造方法。 一方面，制造薄膜晶体管的方法包括在衬底上形成氧化物半导体层，用由氮气或一氧化氮气体产生的等离子体等离子体处理氧化物半导体层，以减少氧化物中的缺陷 并且等离子体处理的氧化物半导体层退火以形成沟道层。