公开(公告)号：US11699613B2

公开(公告)日：2023-07-11

申请号：US17137485

申请日：2020-12-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunguk Jang ,  Seokhoon Kim ,  Seung Hun Lee ,  Yang Xu ,  Jeongho Yoo ,  Jongryeol Yoo ,  Youngdae Cho

IPC: H01L21/76 ,  H01L21/762 ,  H01L21/225 ,  H01L29/423 ,  H01L21/02 ,  H01L29/66 ,  H01L29/165 ,  H01L29/78

CPC classification number: H01L21/762 ,  H01L21/02164 ,  H01L21/02181 ,  H01L21/02225 ,  H01L21/2253 ,  H01L21/76229 ,  H01L21/76232 ,  H01L29/165 ,  H01L29/42316 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/785 ,  H01L29/7848

Abstract: Semiconductor devices and methods of forming the same are provided. The methods may implanting dopants into a substrate to form a preliminary impurity region and heating the substrate to convert the preliminary impurity region into an impurity region. Heating the substrate may be performed at an ambient temperature of from about 800° C. to about 950° C. for from about 20 min to about 50 min. The method may also include forming first and second trenches in the impurity region to define an active fin and forming a first isolation layer and a second isolation layer in the first and second trenches, respectively. The first and second isolation layers may expose opposing sides of the active fin. The method may further include forming a gate insulation layer extending on the opposing sides and an upper surface of the active fin and forming a gate electrode traversing the active fin.

公开(公告)号：US11631670B2

公开(公告)日：2023-04-18

申请号：US17509239

申请日：2021-10-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyojin Kim ,  Jihye Lee ,  Sangmoon Lee ,  Seung Hun Lee

IPC: H01L27/092 ,  H01L29/161

Abstract: A semiconductor device including a substrate; a first active pattern on the substrate and extending in a first direction, an upper portion of the first active pattern including a first channel pattern; first source/drain patterns in recesses in an upper portion of the first channel pattern; and a gate electrode on the first active pattern and extending in a second direction crossing the first direction, the gate electrode being on a top surface and on a side surface of the at least one first channel pattern, wherein each of the first source/drain patterns includes a first, second, and third semiconductor layer, which are sequentially provided in the recesses, each of the first channel pattern and the third semiconductor layers includes silicon-germanium (SiGe), and the first semiconductor layer has a germanium concentration higher than those of the first channel pattern and the second semiconductor layer.

公开(公告)号：US11600698B2

公开(公告)日：2023-03-07

申请号：US17118888

申请日：2020-12-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Namkyu Edward Cho ,  Seung Soo Hong ,  Geum Jung Seong ,  Seung Hun Lee ,  Jeong Yun Lee

IPC: H01L29/06 ,  H01L29/08 ,  H01L21/02 ,  H01L27/02 ,  H01L21/8238 ,  H01L21/311 ,  H01L21/306 ,  H01L27/11 ,  H01L29/165 ,  H01L29/78 ,  H01L27/092

Abstract: A semiconductor device includes fin patterns on a substrate, at least one gate electrode intersecting the fin patterns, source/drain regions on upper surfaces of the fin patterns, and at least one blocking layer on a sidewall of a first fin pattern of the fin patterns, the at least one blocking layer extending above an upper surface of the first fin pattern of the fin patterns, wherein a first source/drain region of the source/drain regions that is on the upper surface of the first fin pattern has an asymmetric shape and is in direct contact with the at least one blocking layer.

公开(公告)号：US11322614B2

公开(公告)日：2022-05-03

申请号：US16934240

申请日：2020-07-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyo Jin Kim ,  Dong Woo Kim ,  Sang Moon Lee ,  Seung Hun Lee

IPC: H01L29/78 ,  H01L21/768 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/06 ,  H01L29/786

Abstract: A semiconductor device includes first and second fin-shaped patterns disposed on a substrate and extending in a first direction, first and second channel layers disposed on the first and second fin-shaped patterns, first and second etch stop layers disposed inside the first and second channel layers, first and second gate structures extending in a second direction different from the first direction on the first channel layer with a first recess formed therebetween, third and fourth gate structures extending in the second direction on the second channel layer with a second recess formed therebetween, the first recess having a first width in the first direction and having a first depth in a third direction perpendicular to the first and second directions, the second recess having a second width different from the first width in the first direction, and having a second depth equal to the first depth in the third direction.

公开(公告)号：US11201087B2

公开(公告)日：2021-12-14

申请号：US16838089

申请日：2020-04-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaemun Kim ,  Gyeom Kim ,  Seung Hun Lee ,  Dahye Kim ,  Ilgyou Shin ,  Sangmoon Lee ,  Kyungin Choi

IPC: H01L21/8234 ,  H01L21/02 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L29/66 ,  H01L21/306 ,  H01L21/762

Abstract: A method includes forming an active pattern on a substrate, the active pattern comprising first semiconductor patterns and second semiconductor patterns, which are alternately stacked, forming a capping pattern on a top surface and a sidewall of the active pattern, performing a deposition process on the capping pattern to form an insulating layer, and forming a sacrificial gate pattern intersecting the active pattern on the insulating layer. The capping pattern has a crystalline structure and is in physical contact with sidewalls of the first semiconductor patterns and sidewalls of the second semiconductor patterns.

公开(公告)号：US20210180231A1

公开(公告)日：2021-06-17

申请号：US17133539

申请日：2020-12-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun Oh Kim ,  Seung Hun Lee ,  Jun Hyun Park ,  Sung Mo Lee ,  So Dam Han

IPC: D06F33/00 ,  D06F34/18 ,  D06F37/24 ,  D06F37/30 ,  D06F39/08 ,  D06F39/14

Abstract: Provided is a washing apparatus and a method of controlling the same. The washing apparatus includes a washing tub; and a controller configured to determine whether laundry put into the washing tub is wet laundry or dry laundry, and to determine a weight of the laundry in the washing tub through a detection of wet laundry weight or a detection of dry laundry weight, based on a result of the determination. The washing apparatus includes a washing tub; and a controller configured to detect a water level of washing water in the washing tub, configured to perform at least one of detecting a weight of wet laundry weight and dry laundry according to the water level, and configured to allow washing to be performed according to at least one result of the detection of the wet laundry weight and the dry laundry weight.

公开(公告)号：US20210098577A1

公开(公告)日：2021-04-01

申请号：US17118888

申请日：2020-12-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Namkyu Edward Cho ,  Seung Soo Hong ,  Geum Jung Seong ,  Seung Hun Lee ,  Jeong Yun Lee

IPC: H01L29/08 ,  H01L21/02 ,  H01L29/06 ,  H01L27/02 ,  H01L21/8238 ,  H01L21/311 ,  H01L21/306 ,  H01L27/11 ,  H01L29/165 ,  H01L29/78 ,  H01L27/092

Abstract: A semiconductor device includes fin patterns on a substrate, at least one gate electrode intersecting the fin patterns, source/drain regions on upper surfaces of the fin patterns, and at least one blocking layer on a sidewall of a first fin pattern of the fin patterns, the at least one blocking layer extending above an upper surface of the first fin pattern of the fin patterns, wherein a first source/drain region of the source/drain regions that is on the upper surface of the first fin pattern has an asymmetric shape and is in direct contact with the at least one blocking layer.

公开(公告)号：US10790133B2

公开(公告)日：2020-09-29

申请号：US15416408

申请日：2017-01-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keum Seok Park ,  Sun Jung Kim ,  Yi Hwan Kim ,  Pan Kwi Park ,  Dong Suk Shin ,  Hyun Kwan Yu ,  Seung Hun Lee

IPC: B08B7/00 ,  B08B7/04 ,  H01L21/02 ,  H01L21/67 ,  H01L21/687 ,  H01L29/66 ,  H01J37/32 ,  H01L21/683 ,  H01L29/78 ,  H01L29/165

Abstract: A precleaning apparatus includes a chamber having an internal space in which a substrate is cleaned, a substrate support disposed in the chamber and configured to support the substrate, a plasma generation unit disposed in the chamber and configured to generate plasma gas, a heating unit configured to heat the substrate on the substrate support, a cleaning gas supply unit configured to supply gas for oxide etching to the internal space of the chamber, and a hydrogen gas supply unit configured to supply hydrogen gas to the internal space of the chamber.

公开(公告)号：US10754724B2

公开(公告)日：2020-08-25

申请号：US16122146

申请日：2018-09-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hui Chung Byun ,  Yoen Hwa Lee ,  Seung Hun Lee

IPC: G06F11/00 ,  G06F11/10 ,  G11C29/00 ,  G11C29/44 ,  G11C7/10

Abstract: A memory device includes a plurality of memory chips storing and outputting data in response to a control command and an address command, at least one ECC memory chip providing an error check and correction (ECC) function on the data stored and output by the plurality of the memory chips, and a controller, marking a memory chip in which a defective memory cell is detected among the plurality of memory chips, as a defective memory chip, storing data of the defective memory chip in the ECC memory chip, and controlling the defective memory chip to execute a post package repair (PPR).

公开(公告)号：US10584436B2

公开(公告)日：2020-03-10

申请号：US15115634

申请日：2015-01-26

Applicant: Samsung Electronics Co., Ltd

Inventor： Seung Hun Lee ,  Jun Hyun Park ,  Sung Mo Lee

IPC: D06F37/20 ,  D06F39/00 ,  D06F33/02 ,  D06F23/04 ,  D06F37/40 ,  D06F37/30 ,  D06F37/36

Abstract: The present invention relates to a washing machine and a control method thereof. The method of controlling the washing machine may include accelerating a motor, and detecting a weight of laundry inside a washing tub; and providing a force in a direction opposite to a rotating direction of the motor to the motor, and decelerating the motor.