公开(公告)号：US06783874B2

公开(公告)日：2004-08-31

申请号：US10405665

申请日：2003-04-02

申请人： Naoya Hasegawa ,  Eiji Umetsu ,  Naohiro Ishibashi ,  Masahiro Oshima

发明人： Naoya Hasegawa ,  Eiji Umetsu ,  Naohiro Ishibashi ,  Masahiro Oshima

IPC分类号： B32B1900

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/1871 ,  G11B5/3163 ,  G11B5/3903 ,  Y10S29/028 ,  Y10S428/90 ,  Y10S428/928 ,  Y10T29/49032 ,  Y10T29/49052 ,  Y10T428/1121 ,  Y10T428/24479

摘要： First electrode layers are formed on second antiferromagnetic layers, and in a step separate from the above, second electrode layers are formed above internal end surfaces of the second antiferromagnetic layers and the first electrode layers and parts of the upper surface of the multilayer film with an additional film provided therebetween. Since the first and the second electrode layers are formed separately, it is not necessary to perform mask alignment twice, and hence an overlap structure can be precisely formed in which the thickness of the second electrode layer at the left side is equivalent to that at the right side.

摘要翻译： 在第二反铁磁层上形成第一电极层，在与上述步骤分离的步骤中，第二电极层形成在第二反铁磁层的内端表面上，第一电极层和多层膜的上表面的一部分 在其间提供附加膜。 由于第一电极层和第二电极层分别形成，因此不需要进行两次掩模对准，因此可以精确地形成重叠结构，其中左侧的第二电极层的厚度等于 右边。

公开(公告)号：US06764778B2

公开(公告)日：2004-07-20

申请号：US09997910

申请日：2001-10-31

申请人： Masamichi Saito ,  Naoya Hasegawa ,  Toshihiro Kuriyama ,  Eiji Umetsu ,  Kenichi Tanaka ,  Yosuke Ide

发明人： Masamichi Saito ,  Naoya Hasegawa ,  Toshihiro Kuriyama ,  Eiji Umetsu ,  Kenichi Tanaka ,  Yosuke Ide

IPC分类号： G11B527

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B2005/3996 ,  H01F10/3268 ,  H01F41/325 ,  Y10T428/1121 ,  Y10T428/1171

摘要： A longitudinal bias layer is laminated above a free magnetic layer with a nonmagnetic layer provided therebetween so that the magnetization direction of the free magnetic layer is oriented by RKKY interaction with the longitudinal bias layer. The RKKY interaction exerts only between the longitudinal bias layer and the regions of the free magnetic layer which are located directly below both ends D of the longitudinal bias layer. Therefore, a thin film magnetic element can be provided, in which the width dimension of a recess formed in the longitudinal bias layer coincides with the magnetic track width.

摘要翻译： 纵向偏置层层叠在自由磁性层之上，其间设有非磁性层，使得自由磁性层的磁化方向取向为与纵向偏置层的RKKY相互作用。 RKKY相互作用仅在纵向偏置层和位于纵向偏置层的两端D正下方的自由磁性层的区域之间发生。 因此，可以提供薄膜磁性元件，其中形成在纵向偏置层中的凹部的宽度尺寸与磁道宽度一致。

公开(公告)号：US6150046A

公开(公告)日：2000-11-21

申请号：US16838

申请日：1998-01-30

申请人： Toshinori Watanabe ,  Akira Takahashi ,  Fumihito Koike ,  Nobuhiro Hayashi ,  Yoshihiro Kanada ,  Kiyoshi Sato ,  Eiji Umetsu ,  Takashi Hatanai ,  Akihiro Makino

发明人： Toshinori Watanabe ,  Akira Takahashi ,  Fumihito Koike ,  Nobuhiro Hayashi ,  Yoshihiro Kanada ,  Kiyoshi Sato ,  Eiji Umetsu ,  Takashi Hatanai ,  Akihiro Makino

IPC分类号： G11B5/11 ,  G11B5/31 ,  G11B5/39 ,  H01F10/13 ,  G11B5/66

CPC分类号： G11B5/3967 ,  G11B5/3106 ,  G11B5/3109 ,  G11B5/3113 ,  G11B5/3163 ,  H01F10/131 ,  G11B5/112 ,  G11B5/3116 ,  G11B5/3903 ,  H01F10/265 ,  Y10S428/90 ,  Y10T428/1143 ,  Y10T428/1171 ,  Y10T428/12465 ,  Y10T428/12472 ,  Y10T428/12576 ,  Y10T428/1259 ,  Y10T428/1266 ,  Y10T428/12674 ,  Y10T428/12806 ,  Y10T428/12854 ,  Y10T428/12861 ,  Y10T428/12875 ,  Y10T428/12931

摘要： A thin film magnetic head includes an upper core layer and a lower core layer which are made of an Fe--M--O alloy, an Fe--M--T--O alloy or an NI--Fe--X alloy so that the upper core layer has a high saturation magnetic flux density, low coercive force and high resistivity, and the lower core layer has a lower saturation magnetic flux density than the upper core layer, low coercive force, high resistivity, and a low magnetostriction constant. Also the lower core layer is formed so that the thickness gradually decreases toward both side ends, and a gap layer can be formed on the lower core layer to have a uniform thickness. Since the lower core layer is formed by sputtering, a material having excellent soft magnetic material can be used, thereby enabling recording at high frequency.

公开(公告)号：US06346338B1

公开(公告)日：2002-02-12

申请号：US09685435

申请日：2000-10-10

申请人： Toshinori Watanabe ,  Akira Takahashi ,  Fumihito Koike ,  Nobuhiro Hayashi ,  Yoshihiro Kanada ,  Kiyoshi Kobayashi ,  Kiyoshi Sato ,  Eiji Umetsu ,  Takashi Hatanai ,  Akihiro Makino

发明人： Toshinori Watanabe ,  Akira Takahashi ,  Fumihito Koike ,  Nobuhiro Hayashi ,  Yoshihiro Kanada ,  Kiyoshi Kobayashi ,  Kiyoshi Sato ,  Eiji Umetsu ,  Takashi Hatanai ,  Akihiro Makino

IPC分类号： G11B539

CPC分类号： G11B5/3967 ,  G11B5/112 ,  G11B5/3106 ,  G11B5/3109 ,  G11B5/3113 ,  G11B5/3116 ,  G11B5/3163 ,  G11B5/3903 ,  H01F10/131 ,  H01F10/265 ,  Y10S428/90 ,  Y10T428/1143 ,  Y10T428/1171 ,  Y10T428/12465 ,  Y10T428/12472 ,  Y10T428/12576 ,  Y10T428/1259 ,  Y10T428/1266 ,  Y10T428/12674 ,  Y10T428/12806 ,  Y10T428/12854 ,  Y10T428/12861 ,  Y10T428/12875 ,  Y10T428/12931

摘要： A thin film magnetic head includes an upper core layer and a lower core layer which are made of an Fe—M—O alloy, an Fe—M—T—O alloy or an NI—Fe—X alloy so that the upper core layer has a high saturation magnetic flux density, low coercive force and high resistivity, and the lower core layer has a lower saturation magnetic flux density than the upper core layer, low coercive force, high resistivity, and a low magnetostriction constant. Also the lower core layer is formed so that the thickness gradually decreases toward both side ends, and a gap layer can be formed on the lower core layer to have a uniform thickness. Since the lower core layer is formed by sputtering, a material having excellent soft magnetic material can be used, thereby enabling recording at high frequency.

摘要翻译： 薄膜磁头包括由Fe-Mo合金，Fe-MTO合金或NI-Fe-X合金制成的上芯层和下芯层，使得上芯层具有高的饱和磁通量 密度低，矫顽力低，电阻率高，下芯层具有比上芯层低的饱和磁通密度，低矫顽力，高电阻率和低磁致伸缩常数。 此外，下芯层形成为使得厚度朝向两个侧端逐渐减小，并且可以在下芯层上形成间隙层以具有均匀的厚度。 由于通过溅射形成下芯层，因此可以使用具有优异的软磁性材料的材料，从而能够以高频进行记录。

公开(公告)号：US20080174921A1

公开(公告)日：2008-07-24

申请号：US11859412

申请日：2007-09-21

申请人： Kazuaki Ikarashi ,  Eiji Umetsu ,  Kenichi Tanaka ,  Kota Asatsuma

发明人： Kazuaki Ikarashi ,  Eiji Umetsu ,  Kenichi Tanaka ,  Kota Asatsuma

IPC分类号： G11B5/127

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  G11C11/16 ,  H01F10/132 ,  H01F10/3254 ,  H01F10/3295 ,  H01F41/302 ,  H01L43/10 ,  H01L43/12

摘要： A second fixed magnetic layer is formed of a CoFeB layer of CoFeB and an interface layer of CoFe or Co provided in that order from the bottom. An insulating barrier layer composed of Al—O is formed on the second fixed magnetic layer. When a lamination structure composed of CoFeB/CoFe/Al—O is formed as described above, a low RA and a high rate of change in resistance (ΔR/R) can be simultaneously obtained. In addition, variations in RA and rate of change in resistance (ΔR/R) can be suppressed as compared to that in the past.

摘要翻译： 第二固定磁性层由CoFeB的CoFeB层和从底部依次提供的CoFe或Co的界面层形成。 在第二固定磁性层上形成由Al-O构成的绝缘阻挡层。 当如上所述形成由CoFeB / CoFe / Al-O组成的层叠结构时，可以同时获得低的RA和高的电阻变化率（DeltaR / R）。 此外，与过去相比，可以抑制RA和电阻变化率（DeltaR / R）的变化。

公开(公告)号：US06870715B2

公开(公告)日：2005-03-22

申请号：US09960679

申请日：2001-09-21

申请人： Eiji Umetsu

发明人： Eiji Umetsu

IPC分类号： G01R33/09 ,  G11B5/31 ,  G11B5/39 ,  H01F10/06 ,  H01F10/12 ,  H01F10/32 ,  H01L43/08

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3116 ,  G11B5/3903 ,  G11B5/3932 ,  G11B2005/3996 ,  H01F10/3268

摘要： A magnetoresistive element exhibiting good external magnetic field detection characteristics is provided. The magnetoresistive element includes a laminate comprising a nonmagnetic conductive layer, first and second ferromagnetic layer sandwiching the nonmagnetic conductive layer, and a first antiferromagnetic layer for pinning the magnetization direction of the first ferromagnetic layer, deposited on the face of the first ferromagnetic layer opposite the face in contact with the nonmagnetic conductive layer. Bias layers for applying a bias magnetic field to the second ferromagnetic layer are provided respectively on two ends of the laminate. Each bias layer comprises second and third antiferromagnetic layers and a third ferromagnetic layer sandwiched by the second and third antiferromagnetic layers so as to magnetically couple with the second and third antiferromagnetic layer. Two end faces of the second ferromagnetic layer come into contact with the third ferromagnetic layers.

摘要翻译： 提供具有良好外部磁场检测特性的磁阻元件。 磁阻元件包括层压体，其包括非磁性导电层，夹着非磁性导电层的第一和第二铁磁层和用于固定第一铁磁层的磁化方向的第一反铁磁层，第一铁磁层沉积在与第一铁磁层相对的第一铁磁层的表面上 面对与非磁性导电层接触。 分别在层叠体的两端设置用于向第二铁磁层施加偏置磁场的偏压层。 每个偏置层包括第二和第三反铁磁层和夹在第二和第三反铁磁层之间的第三铁磁层，以便与第二和第三反铁磁层磁耦合。 第二铁磁层的两个端面与第三铁磁层接触。

公开(公告)号：US20090040661A1

公开(公告)日：2009-02-12

申请号：US12256149

申请日：2008-10-22

申请人： Kenichi Tanaka ,  Eiji Umetsu ,  Kazuaki Ikarashi

发明人： Kenichi Tanaka ,  Eiji Umetsu ,  Kazuaki Ikarashi

IPC分类号： G11B5/127

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3163 ,  G11B5/3906 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/08 ,  H01L43/12

摘要： An insulating barrier layer including a lower insulating layer composed of Al—O and an upper insulating layer composed of CoFe—O and disposed on the lower insulating layer is formed on a second pinned magnetic layer. A free magnetic layer is formed on the insulating barrier layer. According to this structure, a high rate of change in resistance (ΔR/R) and a low RA (element resistance R×element area A) can be achieved.

摘要翻译： 在第二被钉扎磁性层上形成由Al-O构成的下部绝缘层和由CoFe-O构成的上部绝缘层配置在下部绝缘层上的绝缘阻挡层。 在绝缘阻挡层上形成自由磁性层。 根据该结构，可以实现高电阻变化率（DeltaR / R）和低RA（元件电阻Rx元件区域A）。

公开(公告)号：US08516906B2

公开(公告)日：2013-08-27

申请号：US13475579

申请日：2012-05-18

申请人： Eiji Umetsu ,  Masahiko Ishizone ,  Motoki Hirayama ,  Hideki Gochou

发明人： Eiji Umetsu ,  Masahiko Ishizone ,  Motoki Hirayama ,  Hideki Gochou

IPC分类号： G01L1/04 ,  G01L1/10 ,  H01L21/00

CPC分类号： G01L1/18 ,  G01L5/162

摘要： A sensor substrate includes a plurality of piezoresistance elements. The electrical resistance of each piezoresistance element changes in accordance with an amount of displacement of a displacement portion displaced by an external load applied through a pressure receiving unit. A base substrate supports the sensor substrate. The sensor substrate and the base substrate each include a support supporting the displacement portion such that the displacement portion can be displaced and a plurality of electrically connecting portions electrically connected to the plurality of piezoresistance elements. The supports of the sensor and base substrates are joined to each other and the plurality of electrically connecting portions of the sensor and base substrates are joined to each other. Furthermore, in each of the sensor and base substrates, either the support or the plurality of electrically connecting portions or both extend to the periphery of the sensor substrate or the base substrate.

摘要翻译： 传感器基板包括多个压阻元件。 每个压电元件的电阻根据通过压力接收单元施加的外部负载而移位的位移部分的位移量而变化。 基底支撑传感器基底。 传感器基板和基板各自包括支撑位移部分的支撑件，使得位移部分可以移位，并且多个电连接部分电连接到多个压阻元件。 传感器和基底基板的支撑件彼此接合，并且传感器和基底基板的多个电连接部分彼此接合。 此外，在每个传感器和基底基板中，支撑件或多个电连接部分或两者都延伸到传感器基板或基底基板的周边。

公开(公告)号：US07102858B2

公开(公告)日：2006-09-05

申请号：US10369058

申请日：2003-02-18

申请人： Akira Takahashi ,  Jun Takahashi ,  Yuko Kawasaki ,  Kenji Honda ,  Naohiro Ishibashi ,  Eiji Umetsu

发明人： Akira Takahashi ,  Jun Takahashi ,  Yuko Kawasaki ,  Kenji Honda ,  Naohiro Ishibashi ,  Eiji Umetsu

IPC分类号： B11B5/39

CPC分类号： G11B5/3903 ,  G11B5/313 ,  G11B5/3163 ,  G11B5/3932 ,  Y10T29/49052

摘要： A thin-film electrode layer having a superior electromigration resistance is disclosed. The thin-film electrode layer includes a first base layer composed of β-Ta, a main conductive layer composed of Au, and a protective layer. The protective layer is a composite of a Cr sublayer and an α-Ta sublayer. A thin-film magnetic head having the thin-film electrode layers and a method for forming electrodes in the thin-film magnetic head are also disclosed.

摘要翻译： 公开了具有优异的耐迁移性的薄膜电极层。 薄膜电极层包括由β-Ta构成的第一基底层，由Au构成的主导电层和保护层。 保护层是Cr子层和α-Ta子层的复合物。 还公开了一种具有薄膜电极层的薄膜磁头和用于在薄膜磁头中形成电极的方法。

公开(公告)号：US06826022B2

公开(公告)日：2004-11-30

申请号：US10215693

申请日：2002-08-09

申请人： Eiji Umetsu

发明人： Eiji Umetsu

IPC分类号： G11B5127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3903 ,  G11B5/3909 ,  G11B2005/3996 ,  Y10T29/49052

摘要： By forming insulating layers on two sides of a laminate, forming a free magnetic layer continuously on the laminate and the insulating layers, and placing the free magnetic layer in a single magnetic domain by an exchange bias method, reproducing output and changing rate of resistance of a CPP type magnetic sensor can be improved even when recording density is increased in the future.

摘要翻译： 通过在层叠体的两面上形成绝缘层，在层叠体和绝缘层上连续地形成自由磁性层，并通过交换偏置法将自由磁性层置于单个磁畴中，再现输出和电阻变化率 即使在将来记录密度增加的情况下也能够提高CPP型磁传感器。