公开(公告)号：US08420503B2

公开(公告)日：2013-04-16

申请号：US12933113

申请日：2009-04-01

申请人： Shoji Akiyama ,  Makoto Kawai ,  Atsuo Ito ,  Yoshihiro Kubota ,  Kouichi Tanaka ,  Yuji Tobisaka ,  Hiroshi Tamura

发明人： Shoji Akiyama ,  Makoto Kawai ,  Atsuo Ito ,  Yoshihiro Kubota ,  Kouichi Tanaka ,  Yuji Tobisaka ,  Hiroshi Tamura

IPC分类号： H01L21/762

CPC分类号： H01L21/76254 ,  H01L27/12

摘要： A method for easily manufacturing a transparent SOI substrate having: a main surface with a silicon film formed thereon; and a rough main surface located on a side opposite to a side where the silicon film is formed. A method for manufacturing transparent SOI substrate, having a silicon film formed on a first main surface of the transparent insulating substrate, while a second main surface of the transparent insulating substrate, an opposite to the first main surface, is roughened. The method includes at least the steps of: roughening the first main surface with an RMS surface roughness lower than 0.7 nm and the second main surface with an RMS surface roughness higher than the surface roughness of the first main surface to prepare the transparent insulating substrate; and forming the silicon film on the first main surface of the transparent insulating substrate.

摘要翻译： 一种容易制造透明SOI衬底的方法，其具有：形成有硅膜的主表面; 以及位于与形成硅膜的一侧相反一侧的粗糙主表面。 制造透明SOI衬底的方法，其中在透明绝缘衬底的第一主表面上形成硅膜，同时透明绝缘衬底的与第一主表面相反的第二主表面被粗糙化。 该方法至少包括以下步骤：使RMS表面粗糙度低于0.7nm的第一主表面粗糙化，并且第二主表面的RMS表面粗糙度高于第一主表面的表面粗糙度，以制备透明绝缘基板; 以及在所述透明绝缘基板的所述第一主表面上形成所述硅膜。

公开(公告)号：US08357586B2

公开(公告)日：2013-01-22

申请号：US12920363

申请日：2009-03-23

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Kouichi Tanaka ,  Makoto Kawai ,  Yuji Tobisaka ,  Hiroshi Tamura

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Kouichi Tanaka ,  Makoto Kawai ,  Yuji Tobisaka ,  Hiroshi Tamura

IPC分类号： H01L21/46 ,  H01L21/30 ,  H01L21/762

CPC分类号： H01L21/76254 ,  H01L21/30608

摘要： Provided is a method for manufacturing an SOI wafer, which is capable of: efficiently removing an ion-implanted defect layer existing in an ion implanted layer in the vicinity of a peeled surface peeled by an ion implantation peeling method; ensuring the in-plane uniformity of a substrate; and also achieving cost reduction and higher throughput. The method for manufacturing an SOI wafer includes at least the steps of: bonding a silicon wafer with or without an oxide film onto a handle wafer to prepare a bonded substrate, wherein the silicon wafer has an ion implanted layer formed by implanting hydrogen ions and/or rare gas ions into the silicon wafer; peeling the silicon wafer along the ion implanted layer, thereby transferring the silicon wafer onto the handle wafer to produce a post-peeling SOI wafer; immersing the post-peeling SOI wafer in an aqueous ammonia-hydrogen peroxide solution; and performing a heat treatment at a temperature of 900° C. or higher on the immersed post-peeling SOI wafer, and/or polishing a silicon film layer of the immersed post-peeling SOI wafer, through CMP polishing by 10 to 50 nm.

摘要翻译： 提供一种SOI晶片的制造方法，其能够：有效地除去通过离子注入剥离法剥离的剥离面附近的离子注入层中存在的离子注入缺陷层; 确保基板的面内均匀性; 并且还实现成本降低和更高的吞吐量。 制造SOI晶片的方法至少包括以下步骤：将具有或不具有氧化物膜的硅晶片接合到处理晶片上以制备键合衬底，其中所述硅晶片具有通过注入氢离子形成的离子注入层和/ 或稀有气体离子进入硅晶片; 沿着离子注入层剥离硅晶片，从而将硅晶片转移到处理晶片上以产生剥离后的SOI晶片; 将剥离后的SOI晶片浸渍在氨 - 过氧化氢水溶液中; 并在浸渍的剥离后的SOI晶片上进行900℃以上的温度的热处理，和/或通过CMP研磨10〜50nm来研磨浸渍的剥离后的SOI晶片的硅膜层。

公开(公告)号：US20110104871A1

公开(公告)日：2011-05-05

申请号：US12934788

申请日：2009-04-10

申请人： Yuji Tobisaka ,  Yoshihiro Kubota ,  Atsuo Ito ,  Kouichi Tanaka ,  Makoto Kawai ,  Shoji Akiyama ,  Hiroshi Tamura

发明人： Yuji Tobisaka ,  Yoshihiro Kubota ,  Atsuo Ito ,  Kouichi Tanaka ,  Makoto Kawai ,  Shoji Akiyama ,  Hiroshi Tamura

IPC分类号： H01L21/762

CPC分类号： H01L21/187 ,  H01L21/76254

摘要： Provided is a method for manufacturing a bonded wafer with a good thin film over the entire substrate surface, especially in the vicinity of the lamination terminal point. The method for manufacturing a bonded wafer comprises at least the following steps of: forming an ion-implanted region by implanting a hydrogen ion or a rare gas ion, or the both types of ions from a surface of a first substrate which is a semiconductor substrate; subjecting at least one of an ion-implanted surface of the first substrate and a surface of a second substrate to be attached to a surface activation treatment; laminating the ion-implanted surface of the first substrate and the surface of the second substrate in an atmosphere with a humidity of 30% or less and/or a moisture content of 6 g/m3 or less; and a splitting the first substrate at the ion-implanted region so as to reduce thickness of the first substrate, thereby manufacturing a bonded wafer with a thin film on the second substrate.

摘要翻译： 提供一种在整个基板表面上，特别是在层叠终点附近制造具有良好薄膜的接合晶片的方法。 制造接合晶片的方法至少包括以下步骤：通过从作为半导体衬底的第一衬底的表面注入氢离子或稀有气体离子或两种离子形成离子注入区域 ; 对第一基板的离子注入表面和第二基板的表面中的至少一个进行表面活化处理; 将第一基板的离子注入表面和第二基板的表面在湿度为30％以下和/或6g / m 3以下的气氛中层压; 以及在离子注入区域处分裂第一衬底以便减小第一衬底的厚度，由此在第二衬底上制造具有薄膜的接合晶片。

公开(公告)号：US20100244182A1

公开(公告)日：2010-09-30

申请号：US12685194

申请日：2010-01-11

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Kouichi Tanaka ,  Yuji Tobisaka ,  Yoshihiro Nojima

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Kouichi Tanaka ,  Yuji Tobisaka ,  Yoshihiro Nojima

IPC分类号： H01L29/02 ,  H01L21/762

CPC分类号： H01L21/84 ,  H01L21/76254 ,  H01L21/76256

摘要： To provide a method of manufacturing a laminated wafer by which a strong coupling is achieved between wafers made of different materials having a large difference in thermal expansion coefficient without lowering a maximum heat treatment temperature as well as in which cracks or chips of the wafer does not occur. A method of manufacturing a laminated wafer 7 by forming a silicon film layer on a surface 4 of an insulating substrate 3 comprising the steps in the following order of: applying a surface activation treatment to both a surface 2 of a silicon wafer 1 or a silicon wafer 1 to which an oxide film is layered and a surface 4 of the insulating substrate 3 followed by laminating in an atmosphere of temperature exceeding 50° C. and lower than 300° C., applying a heat treatment to a laminated wafer 5 at a temperature of 200° C. to 350° C., and thinning the silicon wafer 1 by a combination of grinding, etching and polishing to form a silicon film layer.

摘要翻译： 为了提供一种制造层叠晶片的方法，在不降低最大热处理温度的情况下，不会降低最大热处理温度以及晶片的裂纹或芯片不会在不具有热膨胀系数差的不同材料制成的晶片之间实现强耦合， 发生。 一种通过在绝缘基板3的表面4上形成硅膜层来制造层压晶片7的方法，包括以下顺序的步骤：对硅晶片1或硅的表面2施加表面活化处理 叠层氧化膜的晶片1和绝缘基板3的表面4，然后在温度超过50℃且低于300℃的气氛中层压，在层叠晶片5上进行热处理 温度为200〜350℃，通过研磨，蚀刻和研磨的组合使硅晶片1变薄，形成硅膜层。

公开(公告)号：US08563401B2

公开(公告)日：2013-10-22

申请号：US13127257

申请日：2009-11-11

申请人： Shoji Akiyama ,  Atsuo Ito

发明人： Shoji Akiyama ,  Atsuo Ito

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/76254

摘要： There is provided a method for manufacturing an SOI substrate capable of effectively and efficiently embrittling an interface of an ion-implanted layer without causing the separation of a bonded surface 9 or the breakage of a bonded wafer.Provided is a method for manufacturing an SOI substrate 8 by forming an SOI layer 4 on a surface of a transparent insulating substrate 3, the method comprising, in the following order, implanting ions into a silicon wafer 5 or a silicon wafer 5 with an oxide film 7 from a surface thereof so as to form an ion-implanted layer 2; subjecting at least one of the surface of the transparent insulating substrate and the surface of the ion-implanted silicon wafer or the silicon wafer with an oxide film to a surface activation treatment; bonding together the silicon wafer 5 or the silicon wafer 5 with an oxide film 7 and the transparent insulating substrate 3; subjecting the bonded wafer to a heat treatment at 150° C. or higher but not higher than 350° C. so as to obtain a laminate 6; and irradiating visible light at a side of the transparent insulating substrate 3 of the laminate 6 toward the ion-implanted layer 2 of the silicon wafer 5 or the silicon wafer 5 with an oxide film 7 to embrittle an interface of the ion-implanted layer 2 and transfer a silicon thin film to the transparent insulating substrate 3 so that the SOI layer 4 can be formed.

摘要翻译： 提供了一种能够有效且有效地脆化离子注入层的界面而不会导致接合面9分离或者接合晶片的断裂的SOI衬底的制造方法。提供了一种制造SOI衬底的方法 如图8所示，通过在透明绝缘基板3的表面上形成SOI层4，该方法包括以下顺序，从其表面将离子注入到具有氧化物膜7的硅晶片5或硅晶片5中，以便 形成离子注入层2; 将透明绝缘基板的表面和离子注入硅晶片或硅晶片的表面中的至少一个用氧化膜进行表面活化处理; 将硅晶片5或硅晶片5与氧化膜7和透明绝缘基板3接合在一起; 使接合晶片在150℃以上且不高于350℃进行热处理，得到层叠体6; 并且利用氧化膜7将层叠体6的透明绝缘性基板3侧的可见光朝向硅晶片5或硅晶片5的离子注入层2照射，从而使离子注入层2的界面脆化 并将硅薄膜转移到透明绝缘基板3，从而可以形成SOI层4。

公开(公告)号：US20110244655A1

公开(公告)日：2011-10-06

申请号：US13127257

申请日：2009-11-11

申请人： Shoji Akiyama ,  Atsuo Ito

发明人： Shoji Akiyama ,  Atsuo Ito

IPC分类号： H01L21/30

CPC分类号： H01L21/76254

摘要： There is provided a method for manufacturing an SOI substrate capable of effectively and efficiently embrittling an interface of an ion-implanted layer without causing the separation of a bonded surface 9 or the breakage of a bonded wafer.Provided is a method for manufacturing an SOI substrate 8 by forming an SOI layer 4 on a surface of a transparent insulating substrate 3, the method comprising, in the following order, implanting ions into a silicon wafer 5 or a silicon wafer 5 with an oxide film 7 from a surface thereof so as to form an ion-implanted layer 2; subjecting at least one of the surface of the transparent insulating substrate and the surface of the ion-implanted silicon wafer or the silicon wafer with an oxide film to a surface activation treatment; bonding together the silicon wafer 5 or the silicon wafer 5 with an oxide film 7 and the transparent insulating substrate 3; subjecting the bonded wafer to a heat treatment at 150° C. or higher but not higher than 350° C. so as to obtain a laminate 6; and irradiating visible light at a side of the transparent insulating substrate 3 of the laminate 6 toward the ion-implanted layer 2 of the silicon wafer 5 or the silicon wafer 5 with an oxide film 7 to embrittle an interface of the ion-implanted layer 2 and transfer a silicon thin film to the transparent insulating substrate 3 so that the SOI layer 4 can be formed.

摘要翻译： 提供了一种能够有效且有效地脆化离子注入层的界面而不会导致接合面9分离或者接合晶片的断裂的SOI衬底的制造方法。提供了一种制造SOI衬底的方法 如图8所示，通过在透明绝缘基板3的表面上形成SOI层4，该方法包括以下顺序，从其表面将离子注入到具有氧化物膜7的硅晶片5或硅晶片5中，以便 形成离子注入层2; 将透明绝缘基板的表面和离子注入硅晶片或硅晶片的表面中的至少一个用氧化膜进行表面活化处理; 将硅晶片5或硅晶片5与氧化膜7和透明绝缘基板3接合在一起; 使接合晶片在150℃以上且不高于350℃进行热处理，得到层叠体6; 并且利用氧化膜7将层叠体6的透明绝缘性基板3侧的可见光朝向硅晶片5或硅晶片5的离子注入层2照射，从而使离子注入层2的界面脆化 并将硅薄膜转移到透明绝缘基板3，从而可以形成SOI层4。

公开(公告)号：US20140014182A1

公开(公告)日：2014-01-16

申请号：US14008919

申请日：2012-05-31

申请人： Tomoyoshi Furihata ,  Atsuo Ito ,  Hyung-Bae Kim ,  Minoru Igarashi ,  Masakatsu Hotta ,  Tsutomu Nakamura

发明人： Tomoyoshi Furihata ,  Atsuo Ito ,  Hyung-Bae Kim ,  Minoru Igarashi ,  Masakatsu Hotta ,  Tsutomu Nakamura

IPC分类号： H01L31/048 ,  H01L31/18 ,  H01L31/052

CPC分类号： H01L31/0481 ,  B32B17/10036 ,  B32B17/10091 ,  B32B17/10302 ,  B32B17/10798 ,  B32B2307/302 ,  B32B2307/412 ,  B32B2307/558 ,  B32B2307/704 ,  B32B2307/712 ,  B32B2457/00 ,  H01L31/0488 ,  H01L31/052 ,  H01L31/0543 ,  H01L31/0547 ,  Y02B10/12 ,  Y02E10/52

摘要： The present invention relates to a solar cell module which is characterized in that: a light-transmitting elastomer member and a solar cell element are arranged in a space between a panel of a transparent member upon which sunlight is incident and a panel of a thermally conductive member which is arranged on the side opposite to the sunlight incidence side in such a manner that the light-transmitting elastomer member is closer to the sunlight incidence side; and the solar cell element is pressed by the light-transmitting elastomer member toward the panel of a thermally conductive member so that the solar cell element is compression bonded thereto. This solar cell module is most suitable as a solar cell module that has excellent heat dissipation of a cell, the temperature of which is increased due to sunlight or a hot spot, and a structure that suppresses the production cost.

摘要翻译： 太阳能电池模块技术领域本发明涉及一种太阳能电池模块，其特征在于：透光性弹性体部件和太阳能电池元件配置在入射了太阳光的透明部件的面板和导热性板 构件，其布置在与太阳光入射侧相对的一侧，使得透光弹性体构件更靠近太阳光入射侧; 并且太阳能电池元件被透光弹性体部件压向导热部件的面板，使得太阳能电池元件被压接在其上。 该太阳能电池模块最适合作为太阳能电池模块，其具有由于阳光或热点而导致温度升高的电池的良好散热性，以及抑制生产成本的结构。

公开(公告)号：US20120165451A1

公开(公告)日：2012-06-28

申请号：US13338396

申请日：2011-12-28

申请人： Minoru Igarashi ,  Tsutomu Nakamura ,  Atsuo Ito ,  Tomoyoshi Furihata ,  Hyung-Bae Kim

发明人： Minoru Igarashi ,  Tsutomu Nakamura ,  Atsuo Ito ,  Tomoyoshi Furihata ,  Hyung-Bae Kim

IPC分类号： C08K5/54 ,  C08K3/36

CPC分类号： C08K3/36 ,  C08K5/5419 ,  C08K9/06 ,  Y02E10/52 ,  Y10T428/31663 ,  C08L83/04

摘要： Disclosed is a minable type silicone rubber composition including as an essential components:(A) 100 parts by weight of an organopolysiloxane represented by the following average compositional formula (I) and having a polymerization degree of at least 100; R1aSiO(4-a)/2   (I) wherein R1 are, identical or different, unsubstituted or substituted monovalent hydrocarbon groups, and a is a positive number of 1.95 to 2.05;(B) 70 to 150 parts by weight of fumed silica having a specific surface area of more than 200 m2/g;(C) 0.1 to 30 parts by weight of an organohydrogenpolysiloxane having at least two hydrogen atoms bonded to silicon atoms in one molecule; and(D) 0.1 to 10 parts by weight of a hydrosilylation reaction catalyst.

摘要翻译： 公开了一种包含作为必要成分的微型硅橡胶组合物：（A）100重量份由以下平均组成式（I）表示的聚合度为至少100的有机聚硅氧烷; R1aSiO（4-a）/ 2（I）其中R1是相同或不同的未取代或取代的一价烃基，a是1.95〜2.05的正数; （B）70〜150重量份比表面积大于200m 2 / g的热解法二氧化硅; （C）0.1〜30重量份在1分子中具有与硅原子键合的氢原子中的至少2个氢原子的有机氢聚硅氧烷; 和（D）0.1〜10重量份的氢化硅烷化反应催化剂。

公开(公告)号：US6090732A

公开(公告)日：2000-07-18

申请号：US199333

申请日：1998-11-25

申请人： Atsuo Ito ,  Noboru Ichinose ,  Kenji Ojima ,  Pierre Layrolle ,  Haruo Kawamura

发明人： Atsuo Ito ,  Noboru Ichinose ,  Kenji Ojima ,  Pierre Layrolle ,  Haruo Kawamura

IPC分类号： A61K9/00 ,  A61F2/00 ,  A61F2/30 ,  A61L27/00 ,  A61L27/12 ,  C01B25/32 ,  C04B35/447 ,  C01B25/222 ,  A61F2/28

CPC分类号： A61L27/12 ,  A61F2002/30968 ,  A61F2310/00293

摘要： A tricalcium-phosphate-based prosthetic material is disclosed, which is a sintered ceramic body mainly consisting of tricalcium phosphate containing a limited amount of zinc, which is a known element having an osteogenesis-promoting effect, in the form of a solid solution. By virtue of the limited content of zinc and the form of solid solution in which zinc is contained, the inventive material exhibits an osteogenesis-promoting effect without toxicity. The ceramic body is prepared, preferably, by a process in which a tricalcium phosphate powder containing 0.015-8.00% by weight of zinc is diluted by the addition of hydroxyapatite and/or tricalcium phosphate free from zinc in such a proportion as to give a (Ca+Zn)/P molar ratio of 1.55 to 1.65 and the powder blend is shaped and subjected to sintering.

摘要翻译： 公开了一种基于磷酸三钙的假体材料，其是以固体形式形式主要由含有有限量的锌的磷酸三钙组成的烧结陶瓷体，其是具有成骨促进作用的已知元素。 由于锌的含量有限，含锌的固溶体形式，本发明的材料表现出无毒性的成骨促进作用。 优选通过以下方法制备陶瓷体，其中通过加入不含锌的羟基磷灰石和/或磷酸三钙来稀释含有0.015-8.00重量％的锌的磷酸三钙粉末，其比例为（ Ca + Zn）/ P摩尔比为1.55〜1.65，将粉末混合物成形并进行烧结。

公开(公告)号：US3942017A

公开(公告)日：1976-03-02

申请号：US504557

申请日：1974-09-09

申请人： Kenichiro Uehara ,  Atsuo Ito ,  Koichi Nishimune ,  Kazutoshi Fujita

发明人： Kenichiro Uehara ,  Atsuo Ito ,  Koichi Nishimune ,  Kazutoshi Fujita

IPC分类号： G21K1/08 ,  G21K5/04 ,  H01J37/147 ,  A61K27/02

CPC分类号： G21K1/08 ,  G21K5/04 ,  H01J37/147

摘要： An irradiation apparatus with high energy electrons is disclosed in which a wire shaped or linear object to be irradiated is moved back and forth many times under an electron window so as to irradiate it with an electron beam. According to one feature of the invention, an electron beam, which leaks through gaps between the objects to be irradiated or which penetrates the objects to be irradiated, is reversed by a magnetic field approximately perpendicular to the scanning face of the electron beam by means of a magnet which is disposed under the objects to be irradiated, and the reversed electron beam is thereby again applied to the objects to be irradiated. A high utilization rate of the electron beam is accomplished, and the objects can be thereby uniformly irradiated with the electron beam.

摘要翻译： 公开了一种具有高能电子的照射装置，其中待照射的线状或线状物体在电子窗口下来回移动多次，以便以电子束照射。 根据本发明的一个特点，通过被照射物体或穿透被照射物体之间的间隙泄漏的电子束通过大致垂直于电子束的扫描面的磁场而被反转，借助于 设置在被照射物体下方的磁体，并且由此再次将被反射的电子束施加到被照射物体上。 实现电子束的高利用率，能够使电子束均匀地照射物体。