公开(公告)号：US08492764B2

公开(公告)日：2013-07-23

申请号：US12848375

申请日：2010-08-02

申请人： Shunpei Yamazaki ,  Masayuki Sakakura ,  Junichiro Sakata ,  Masashi Tsubuku ,  Kengo Akimoto ,  Miyuki Hosoba ,  Yoshiaki Oikawa

发明人： Shunpei Yamazaki ,  Masayuki Sakakura ,  Junichiro Sakata ,  Masashi Tsubuku ,  Kengo Akimoto ,  Miyuki Hosoba ,  Yoshiaki Oikawa

IPC分类号： H01L29/786 ,  H01L21/336 ,  H01L33/00

CPC分类号： H01L27/3262 ,  H01L27/1225 ,  H01L27/322 ,  H01L27/3248 ,  H01L51/5278 ,  H01L2251/5323

摘要： A light-emitting device in which plural kinds of circuits are formed over one substrate and plural kinds of thin film transistors in accordance with characteristics of the plural kinds of circuits are included. An inverted-coplanar thin film transistor including an oxide semiconductor layer which overlaps a source and drain electrode layers is used as a thin film transistor for a pixel, a channel-stop thin film transistor is used as a thin film transistor for a driver circuit, and a color filter layer is provided between the thin film transistor for a pixel and a light-emitting element so as to overlap the light-emitting element which is electrically connected to the thin film transistor for a pixel.

摘要翻译： 包括根据多种电路的特性，在一个基板上形成多种电路的多个薄膜晶体管的发光器件。 包括与源极和漏极层重叠的氧化物半导体层的倒置共面薄膜晶体管用作像素的薄膜晶体管，通道停止薄膜晶体管用作用于驱动电路的薄膜晶体管， 并且在用于像素的薄膜晶体管和发光元件之间设置滤色器层，以与与像素的薄膜晶体管电连接的发光元件重叠。

公开(公告)号：US08492759B2

公开(公告)日：2013-07-23

申请号：US12960636

申请日：2010-12-06

申请人： Kengo Akimoto ,  Shunpei Yamazaki

发明人： Kengo Akimoto ,  Shunpei Yamazaki

IPC分类号： H01L29/12

CPC分类号： H01L29/7869 ,  H01L29/78606

摘要： It is an object to provide a low-cost oxide semiconductor material which is excellent in controllability of the carrier concentration and stability, and to provide a field effect transistor including the oxide semiconductor material. An oxide including indium, silicon, and zinc is used as the oxide semiconductor material. Here, the content of silicon in the oxide semiconductor film is greater than or equal to 4 mol % and less than or equal to 8 mol %. The field effect transistor including such an In—Si—Zn—O film can withstand heat treatment at a high temperature and is effective against −BT stress.

摘要翻译： 本发明的目的是提供一种低载体氧化物半导体材料，其具有优异的载流子浓度和稳定性的可控性，并且提供包括该氧化物半导体材料的场效应晶体管。 使用包含铟，硅和锌的氧化物作为氧化物半导体材料。 这里，氧化物半导体膜中的硅含量大于或等于4摩尔％且小于或等于8摩尔％。 包含这种In-Si-Zn-O膜的场效应晶体管可以承受高温下的热处理，对-BT应力有效。

公开(公告)号：US08488077B2

公开(公告)日：2013-07-16

申请号：US13363405

申请日：2012-02-01

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Masashi Tsubuku ,  Kengo Akimoto ,  Miyuki Hosoba ,  Masayuki Sakakura ,  Yoshiaki Oikawa

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Masashi Tsubuku ,  Kengo Akimoto ,  Miyuki Hosoba ,  Masayuki Sakakura ,  Yoshiaki Oikawa

IPC分类号： G02F1/136

CPC分类号： H01L21/477 ,  G02F1/133345 ,  G02F1/1368 ,  H01L21/02565 ,  H01L21/02664 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1251 ,  H01L27/1259 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

摘要： An object is to provide a display device with excellent display characteristics, where a pixel circuit and a driver circuit provided over one substrate are formed using transistors which have different structures corresponding to characteristics of the respective circuits. The driver circuit portion includes a driver circuit transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using a metal film, and a channel layer is formed using an oxide semiconductor. The pixel portion includes a pixel transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using an oxide conductor, and a semiconductor layer is formed using an oxide semiconductor. The pixel transistor is formed using a light-transmitting material, and thus, a display device with higher aperture ratio can be manufactured.

公开(公告)号：US08427595B2

公开(公告)日：2013-04-23

申请号：US12556595

申请日：2009-09-10

申请人： Shunpei Yamazaki ,  Kengo Akimoto ,  Shigeki Komori ,  Hideki Uochi ,  Rihito Wada ,  Yoko Chiba

发明人： Shunpei Yamazaki ,  Kengo Akimoto ,  Shigeki Komori ,  Hideki Uochi ,  Rihito Wada ,  Yoko Chiba

IPC分类号： G02F1/136 ,  G02F1/1343 ,  G02F1/1345 ,  H01L27/14 ,  H01L29/04 ,  H01L29/15 ,  H01L31/036

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/124 ,  H01L2924/0002 ,  H01L2924/00

摘要： To provide a structure suitable for a common connection portion provided in a display panel. A common connection portion provided in an outer region of a pixel portion has a stacked structure of an insulating layer formed using the same layer as a gate insulating layer, an oxide semiconductor layer formed using the same layer as a second oxide semiconductor layer, and a conductive layer (also referred to as a common potential line) formed using the same layer as the conductive layer, in which the conductive layer (also referred to as the common potential line) is connected to a common electrode through an opening in an interlayer insulating layer provided over the first oxide semiconductor layer and an electrode opposite to a pixel electrode is electrically connected to the common electrode through conductive particles.

摘要翻译： 提供适合于设置在显示面板中的公共连接部分的结构。 设置在像素部分的外部区域中的公共连接部分具有使用与栅极绝缘层相同的层形成的绝缘层的堆叠结构，使用与第二氧化物半导体层相同的层形成的氧化物半导体层，以及 使用与导电层相同的层形成的导电层（也称为公共电位线），其中导电层（也称为公共电位线）通过层间绝缘中的开口连接到公共电极 设置在第一氧化物半导体层上的层和与像素电极相对的电极通过导电颗粒电连接到公共电极。

公开(公告)号：US08368066B2

公开(公告)日：2013-02-05

申请号：US12571549

申请日：2009-10-01

申请人： Shunpei Yamazaki ,  Kengo Akimoto ,  Shigeki Komori ,  Hideki Uochi ,  Tomoya Futamura ,  Takahiro Kasahara

发明人： Shunpei Yamazaki ,  Kengo Akimoto ,  Shigeki Komori ,  Hideki Uochi ,  Tomoya Futamura ,  Takahiro Kasahara

IPC分类号： H01L29/72

CPC分类号： H01L27/1225 ,  H01L27/124 ,  H01L27/1244 ,  H01L27/127 ,  H01L29/1054 ,  H01L29/20 ,  H01L29/24 ,  H01L29/7869

摘要： A display device including an oxide semiconductor, a protective circuit and the like having appropriate structures and a small occupied area is necessary. The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first oxide semiconductor layer which is over the gate insulating layer and overlaps with the gate electrode; and a first wiring layer and a second wiring layer each of which is formed by stacking a conductive layer and a second oxide semiconductor layer and whose end portions are over the first oxide semiconductor layer and overlap with the gate electrode. The gate electrode of the non-linear element is connected to a scan line or a signal line, the first wiring layer or the second wiring layer of the non-linear element is directly connected to the gate electrode layer so as to apply potential of the gate electrode.

公开(公告)号：US08324621B2

公开(公告)日：2012-12-04

申请号：US12899962

申请日：2010-10-07

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Kengo Akimoto ,  Kosei Noda

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Kengo Akimoto ,  Kosei Noda

IPC分类号： H01L29/12

CPC分类号： H01L27/1225 ,  B82Y30/00 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/45 ,  H01L29/4908

摘要： Disclosed is a highly reliable semiconductor device and a manufacturing method thereof, which is achieved by using a transistor with favorable electrical characteristics and high reliability as a switching element. The semiconductor device includes a driver circuit portion and a pixel portion over one substrate, and the pixel portion comprises a light-transmitting bottom-gate transistor. The light-transmitting bottom-gate transistor comprises: a transparent gate electrode layer; an oxide semiconductor layer over the gate electrode layer, a superficial layer of the oxide semiconductor layer including comprising a microcrystal group of nanocrystals; and source and drain electrode layers formed over the oxide semiconductor layer, the source and drain electrode layers comprising a light-transmitting oxide conductive layer.

摘要翻译： 公开了一种高可靠性的半导体器件及其制造方法，其通过使用具有良好的电特性和高可靠性的晶体管作为开关元件来实现。 半导体器件包括驱动电路部分和一个衬底上的像素部分，并且像素部分包括透光底栅晶体管。 透光底栅晶体管包括：透明栅极电极层; 在所述栅极电极层上的氧化物半导体层，所述氧化物半导体层的表面层包括微晶纳米晶体组; 以及形成在所述氧化物半导体层上的源极和漏极电极层，所述源极和漏极电极层包括透光氧化物导电层。

公开(公告)号：US08319215B2

公开(公告)日：2012-11-27

申请号：US12570481

申请日：2009-09-30

申请人： Shunpei Yamazaki ,  Kengo Akimoto ,  Atsushi Umezaki

发明人： Shunpei Yamazaki ,  Kengo Akimoto ,  Atsushi Umezaki

IPC分类号： H01L33/00

CPC分类号： H01L27/1225 ,  G02F1/13624 ,  H01L27/124 ,  H01L27/3276 ,  H01L29/7869

摘要： With an increase in the definition of a display device, the number of pixels is increased, and thus the numbers of gate lines and signal lines are increased. Due to the increase in the numbers of gate lines and signal lines, it is difficult to mount an IC chip having a driver circuit for driving the gate and signal lines by bonding or the like, which causes an increase in manufacturing costs. A pixel portion and a driver circuit for driving the pixel portion are formed over one substrate. At least a part of the driver circuit is formed using an inverted staggered thin film transistor in which an oxide semiconductor is used. The driver circuit as well as the pixel portion is provided over the same substrate, whereby manufacturing costs are reduced.

摘要翻译： 随着显示装置的定义的增加，像素的数量增加，因此栅极线和信号线的数量增加。 由于栅极线和信号线的数量增加，难以安装具有用于通过接合等驱动栅极和信号线的驱动电路的IC芯片，这导致制造成本的增加。 用于驱动像素部分的像素部分和驱动电路形成在一个衬底上。 使用其中使用氧化物半导体的反交错薄膜晶体管形成驱动电路的至少一部分。 驱动电路以及像素部分设置在相同的基板上，由此降低了制造成本。

公开(公告)号：US20120153333A1

公开(公告)日：2012-06-21

申请号：US13327047

申请日：2011-12-15

申请人： Shunpei Yamazaki ,  Koichiro Tanaka ,  Masaaki Hiroki ,  Hisao Ikeda ,  Kengo Akimoto

发明人： Shunpei Yamazaki ,  Koichiro Tanaka ,  Masaaki Hiroki ,  Hisao Ikeda ,  Kengo Akimoto

IPC分类号： H01L33/58 ,  H01L33/36

CPC分类号： H01L51/5246 ,  H01L51/50 ,  H01L51/5212 ,  H01L51/5237 ,  H01L51/524 ,  H01L51/525 ,  H01L51/5253 ,  H01L51/5256 ,  H01L51/5259 ,  H01L51/5275 ,  H01L2251/50 ,  H01L2251/53 ,  H01L2251/5307 ,  H01L2251/5323 ,  H01L2251/5338 ,  H01L2251/5361

摘要： A highly reliable light-emitting device which includes an organic EL element and is lightweight is provided. The light-emitting device includes a first organic resin layer; a first glass layer over the first organic resin layer; a light-emitting element over the first glass layer; a second glass layer over the light-emitting element; and a second organic resin layer over the second glass layer. The first organic resin layer and the first glass layer each have a property of transmitting visible light. The thickness of the first glass layer and the thickness of the second glass layer are independently greater than or equal to 25 μ and less than or equal to 100 μ. The light-emitting element includes a first electrode having a property of transmitting visible light, a layer containing a light-emitting organic compound, and a second electrode stacked in this order from the first glass layer side.

摘要翻译： 提供了包括有机EL元件并且重量轻的高度可靠的发光装置。 发光装置包括第一有机树脂层; 第一有机树脂层上的第一玻璃层; 在第一玻璃层上的发光元件; 在所述发光元件上方的第二玻璃层; 和在第二玻璃层上的第二有机树脂层。 第一有机树脂层和第一玻璃层各具有透射可见光的性质。 第一玻璃层的厚度和第二玻璃层的厚度独立地大于或等于25μ并且小于或等于100μ。 发光元件包括具有透射可见光的特性的第一电极，含有发光有机化合物的层和从第一玻璃层侧依次层叠的第二电极。

公开(公告)号：US20120126270A1

公开(公告)日：2012-05-24

申请号：US13302213

申请日：2011-11-22

申请人： Shunpei Yamazaki ,  Hisao Ideka ,  Kengo Akimoto

发明人： Shunpei Yamazaki ,  Hisao Ideka ,  Kengo Akimoto

IPC分类号： H01L33/58 ,  H01L33/62

CPC分类号： H01L51/5253 ,  H01L27/3258 ,  H01L51/5275

摘要： An organic optical device which can suppress deterioration due to moisture or an impurity is provided. An organic optical device includes a supporting body, a functional layer provided over the supporting body, and a light-emitting body containing an organic compound provided over the functional layer. The functional layer includes an insulating film containing gallium or aluminum, zinc, and oxygen. The supporting body and the functional layer each have a property of transmitting light with a wavelength of greater than or equal to 400 nm and less than or equal to 700 nm. By using the insulating film containing gallium or aluminum, zinc, and oxygen as a protective film, entry of moisture or an impurity into an organic compound or a metal material can be suppressed.

摘要翻译： 提供了能够抑制由于水分或杂质引起的劣化的有机光学元件。 有机光学器件包括支撑体，设置在支撑体上的功能层，以及包含设置在功能层上的有机化合物的发光体。 功能层包括含有镓或铝，锌和氧的绝缘膜。 支撑体和功能层各自具有透射波长大于或等于400nm且小于或等于700nm的光的性质。 通过使用含有镓或铝，锌和氧的绝缘膜作为保护膜，可以抑制水分或杂质进入有机化合物或金属材料。

公开(公告)号：US08049225B2

公开(公告)日：2011-11-01

申请号：US12535711

申请日：2009-08-05

申请人： Shunpei Yamazaki ,  Hidekazu Miyairi ,  Akiharu Miyanaga ,  Kengo Akimoto ,  Kojiro Shiraishi

发明人： Shunpei Yamazaki ,  Hidekazu Miyairi ,  Akiharu Miyanaga ,  Kengo Akimoto ,  Kojiro Shiraishi

IPC分类号： H01L29/15 ,  H01L29/22

CPC分类号： H01L29/66772 ,  H01L29/6675 ,  H01L29/78618 ,  H01L29/7869

摘要： An embodiment is to include a staggered (top gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer and a buffer layer is provided between the semiconductor layer and a source and drain electrode layers. The buffer layer having higher carrier concentration than the semiconductor layer is provided intentionally between the source and drain electrode layers and the semiconductor layer, whereby an ohmic contact is formed.

摘要翻译： 一个实施例是包括交错（顶栅结构）薄膜晶体管，其中使用含有In，Ga和Zn的氧化物半导体膜作为半导体层，并且缓冲层设置在半导体层与源极和漏极之间 层。 有意地在源极和漏极电极层与半导体层之间提供具有比半导体层高的载流子浓度的缓冲层，从而形成欧姆接触。