公开(公告)号：US08320152B2

公开(公告)日：2012-11-27

申请号：US12385859

申请日：2009-04-22

Applicant: Young-jin Cho ,  Hyung-soon Shin ,  Seung-jun Lee ,  Sun-ae Seo ,  Sung-chul Lee ,  Ji-young Bae

Inventor： Young-jin Cho ,  Hyung-soon Shin ,  Seung-jun Lee ,  Sun-ae Seo ,  Sung-chul Lee ,  Ji-young Bae

IPC: G11C7/00

CPC classification number: G01R33/12 ,  G01R33/1207 ,  G01R33/1284 ,  G01R33/1292 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C19/0808 ,  G11C19/0841

Abstract: An information storage device includes a storage node, a write unit configured to write information to a first magnetic domain region of the storage node, and a read unit configured to read information from a second magnetic domain region of the storage node. The information storage device further includes a temporary storage unit configured to temporarily store information read by the read unit, and a write control unit electrically connected to the temporary storage unit and configured to control current supplied to the write unit. The information read from the second magnetic domain region is stored in the temporary storage unit and written to the first magnetic domain region.

Abstract translation: 信息存储装置包括存储节点，写入单元，被配置为向存储节点的第一磁畴区域写入信息;以及读取单元，被配置为从存储节点的第二磁畴区域读取信息。 所述信息存储装置还包括临时存储单元，其被配置为临时存储由所述读取单元读取的信息;以及写入控制单元，电连接到所述临时存储单元并且被配置为控制提供给所述写入单元的电流。 从第二磁畴区域读取的信息存储在临时存储单元中，并写入第一磁畴区域。

公开(公告)号：US08270197B2

公开(公告)日：2012-09-18

申请号：US12289299

申请日：2008-10-24

Applicant: Sung-chul Lee

Inventor： Sung-chul Lee

IPC: G11C19/00

CPC classification number: G11C19/0841 ,  G11C11/14 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675

Abstract: A method of operating an information storage device using a magnetic domain wall movement in a magnetic nanowire is provided. The magnetic nanowire includes a plurality of magnetic domains and pinning sites formed in regions between the magnetic domains. The method includes depinning the magnetic domain wall from a first pinning site by applying a first pulse current having a first pulse current density to the magnetic nanowire and moving the magnetic domain wall to a second pinning site by applying a second pulse current having a second pulse current density to the magnetic nanowire. The first pulse current density is greater than the second pulse current density.

Abstract translation: 提供了一种在磁性纳米线中使用磁畴壁移动来操作信息存储装置的方法。 磁性纳米线包括形成在磁畴之间的区域中的多个磁畴和钉扎位置。 该方法包括通过向磁性纳米线施加具有第一脉冲电流密度的第一脉冲电流并将磁畴壁移动到第二钉扎位置，通过施加具有第二脉冲的第二脉冲电流来从第一钉扎位置去除磁畴壁 磁性纳米线的电流密度。 第一脉冲电流密度大于第二脉冲电流密度。

公开(公告)号：US08233305B2

公开(公告)日：2012-07-31

申请号：US12458249

申请日：2009-07-07

Applicant: Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pi ,  Ji-young Bae

Inventor： Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pi ,  Ji-young Bae

IPC: G11C19/00

CPC classification number: G11C19/0808 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  Y10T29/49069

Abstract: A magnetic structure includes a first portion and a plurality of second portions. The first portion extends in a first direction. The plurality of second portions extend from ends of the first portion in a second direction. The first and second directions are perpendicular to one another. Two magnetic domains magnetized in directions opposite to each other and a magnetic domain wall between the magnetic domains are formed in the magnetic structure.

Abstract translation: 磁性结构包括第一部分和多个第二部分。 第一部分沿第一方向延伸。 多个第二部分在第二方向从第一部分的端部延伸。 第一和第二方向彼此垂直。 在磁性结构中形成两个彼此相反方向磁化的磁畴和磁畴之间的磁畴壁。

公开(公告)号：US20120139069A1

公开(公告)日：2012-06-07

申请号：US13313361

申请日：2011-12-07

Applicant: Kwang-seok Kim ,  U-In Chung ,  Jai-kwang Shin ,  Kee-won Kim ,  Sung-chul Lee ,  Ung-hwan Pi

Inventor： Kwang-seok Kim ,  U-In Chung ,  Jai-kwang Shin ,  Kee-won Kim ,  Sung-chul Lee ,  Ung-hwan Pi

IPC: H01L29/82 ,  H01L21/04

CPC classification number: H01L27/228 ,  G11C11/161 ,  H01L29/82 ,  H01L43/08 ,  H01L43/12

Abstract: A storage node of a magnetic memory device includes: a lower magnetic layer, a tunnel barrier layer formed on the lower magnetic layer, and a free magnetic layer formed on the tunnel barrier. The free magnetic layer has a magnetization direction that is switchable in response to a spin current. The free magnetic layer has a cap structure surrounding at least one material layer on which the free magnetic layer is formed.

Abstract translation: 磁存储器件的存储节点包括：下磁层，形成在下磁层上的隧道势垒层和形成在隧道势垒上的自由磁层。 自由磁性层具有响应于自旋电流而可切换的磁化方向。 自由磁性层具有围绕形成有自由磁性层的至少一个材料层的盖结构。

公开(公告)号：US20120038430A1

公开(公告)日：2012-02-16

申请号：US13099684

申请日：2011-05-03

Applicant: Kwang-seok Kim ,  Sung-chul Lee ,  Kee-won Kim ,  Sun-ae Seo ,  Ung-hwan Pi

Inventor： Kwang-seok Kim ,  Sung-chul Lee ,  Kee-won Kim ,  Sun-ae Seo ,  Ung-hwan Pi

IPC: H03B5/30

CPC classification number: H03B15/006

Abstract: Oscillators and methods of operating the same, the oscillators include a pinned layer having a fixed magnetization direction, a first free layer over the pinned layer, and a second free layer over the first free layer. The oscillators are configured to generate a signal using precession of a magnetic moment of at least one of the first and second free layers.

Abstract translation: 振荡器及其操作方法，振荡器包括具有固定磁化方向的钉扎层，被钉扎层上的第一自由层，以及在第一自由层上的第二自由层。 振荡器被配置为使用第一和第二自由层中的至少一个的磁矩的进动来产生信号。

公开(公告)号：US08089797B2

公开(公告)日：2012-01-03

申请号：US12659515

申请日：2010-03-11

Applicant: Ho-jung Kim ,  Jai-kwang Shin ,  Sun-ae Seo ,  Sung-chul Lee

Inventor： Ho-jung Kim ,  Jai-kwang Shin ,  Sun-ae Seo ,  Sung-chul Lee

IPC: G11C19/00

CPC classification number: G11C19/0808 ,  G11C11/161 ,  G11C11/1653 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

Abstract: A memory cell includes: a memory cell array unit having a plurality of nano wires arranged vertically on a substrate, each of the plurality of nano wires having a plurality of domains for storing information; a nano wire selection unit formed on the substrate and configured to select at least one of the plurality of nano wires; a domain movement control unit formed on the substrate and configured to control a domain movement operation with respect to at least one of the plurality of nano wires; and a read/write control unit formed on the substrate and configured to control at least one of a read operation and a write operation with respect to at least one of the plurality of nano wires.

Abstract translation: 存储单元包括：存储单元阵列单元，具有垂直地布置在基板上的多个纳米线，所述多个纳米线中的每一个具有用于存储信息的多个域; 形成在所述基板上并被配置为选择所述多个纳米线中的至少一个的纳米线选择单元; 域移动控制单元，形成在所述基板上，并且被配置为控制相对于所述多个纳米线中的至少一个的域移动操作; 以及读/写控制单元，形成在所述基板上并被配置为控制关于所述多根纳米线中的至少一个的读取操作和写入操作中的至少一个。

公开(公告)号：US08045371B2

公开(公告)日：2011-10-25

申请号：US12588333

申请日：2009-10-13

Applicant: Sung-chul Lee ,  Hyung-soon Shin ,  Seung-jun Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pl ,  Ji-young Bae ,  Jin-seong Heo

Inventor： Sung-chul Lee ,  Hyung-soon Shin ,  Seung-jun Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pl ,  Ji-young Bae ,  Jin-seong Heo

IPC: G11C11/15

CPC classification number: G11B5/584 ,  G11B5/581 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675

Abstract: An information storage device includes a magnetic structure having a buffer track and a plurality of storage tracks connected to the buffer track. A write/read unit is disposed on the magnetic structure, and a plurality of switching devices are respectively connected to the buffer track, the plurality of storage tracks, and the write/read unit. The switching devices that are respectively connected to the buffer track and the storage tracks. The information storage device further includes a circuit configured to supply current to at least one of the magnetic structure and the write/read unit.

Abstract translation: 信息存储装置包括具有缓冲轨道和连接到缓冲轨迹的多个存储轨道的磁结构。 写/读单元设置在磁结构上，并且多个开关装置分别连接到缓冲磁道，多个存储磁道和写/读单元。 分别连接到缓冲器轨道和存储轨道的开关装置。 信息存储装置还包括被配置为向磁结构和写入/读取单元中的至少一个提供电流的电路。

公开(公告)号：US07961491B2

公开(公告)日：2011-06-14

申请号：US11730121

申请日：2007-03-29

Applicant: Sung-chul Lee ,  Sung-hoon Choa ,  Eun-sik Kim

Inventor： Sung-chul Lee ,  Sung-hoon Choa ,  Eun-sik Kim

IPC: G11C19/00

CPC classification number: G11C11/14 ,  G11C19/0808 ,  Y10S977/933 ,  Y10S977/935

Abstract: Provided are a data storage device using a magnetic domain wall movement and a method of operating the data storage device. The data storage device includes a magnetic layer which has a plurality of magnetic domains, a current applying unit which applies current for a magnetic domain wall movement to the magnetic layer, and a head for reading and writing, wherein the magnetic layer comprises a plurality of perpendicular magnetic layers formed on a substrate in a plurality of rows and columns, and a horizontal magnetic layer formed on the perpendicular magnetic layers to connect the perpendicular magnetic layers.

Abstract translation: 提供了使用磁畴壁移动的数据存储装置和操作数据存储装置的方法。 该数据存储装置包括具有多个磁畴的磁性层，向磁性层施加用于磁畴壁运动的电流的电流施加单元和用于读取和写入的磁头，其中该磁性层包括多个 在多个行和列中的基板上形成的垂直磁性层，以及形成在垂直磁性层上以连接垂直磁性层的水平磁性层。

公开(公告)号：US07924593B2

公开(公告)日：2011-04-12

申请号：US12232660

申请日：2008-09-22

Applicant: Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pi ,  Ji-young Bae

Inventor： Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pi ,  Ji-young Bae

IPC: G11C16/00

CPC classification number: G11C19/0808 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C19/0841

Abstract: Provided are an information storage device and a method of operating the same. The information storage device includes: a magnetic layer having a plurality of magnetic domain regions and a magnetic domain wall interposed between the magnetic domain regions; a first unit disposed on a first region which is one of the plurality of magnetic domain regions for recording information to the first region; a second unit connected to the first unit for inducing a magnetic field so as to record information to the first region.

Abstract translation: 提供了一种信息存储装置及其操作方法。 信息存储装置包括：具有多个磁畴区域的磁性层和介于磁畴区域之间的磁畴壁; 第一单元，设置在作为用于将信息记录到第一区域的多个磁畴区域中的一个的第一区域上; 连接到第一单元的第二单元，用于感应磁场，以便将信息记录到第一区域。

公开(公告)号：US20110063885A1

公开(公告)日：2011-03-17

申请号：US12659515

申请日：2010-03-11

Applicant: Ho-jung Kim ,  Jai-kwang Shin ,  Sun-ae Seo ,  Sung-chul Lee

Inventor： Ho-jung Kim ,  Jai-kwang Shin ,  Sun-ae Seo ,  Sung-chul Lee

IPC: G11C19/00 ,  G11C7/00

CPC classification number: G11C19/0808 ,  G11C11/161 ,  G11C11/1653 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

Abstract: A memory cell includes: a memory cell array unit having a plurality of nano wires arranged vertically on a substrate, each of the plurality of nano wires having a plurality of domains for storing information; a nano wire selection unit formed on the substrate and configured to select at least one of the plurality of nano wires; a domain movement control unit formed on the substrate and configured to control a domain movement operation with respect to at least one of the plurality of nano wires; and a read/write control unit formed on the substrate and configured to control at least one of a read operation and a write operation with respect to at least one of the plurality of nano wires.

Abstract translation: 存储单元包括：存储单元阵列单元，具有垂直地布置在基板上的多个纳米线，所述多个纳米线中的每一个具有用于存储信息的多个域; 形成在所述基板上并被配置为选择所述多个纳米线中的至少一个的纳米线选择单元; 域移动控制单元，形成在所述基板上，并且被配置为控制相对于所述多个纳米线中的至少一个的域移动操作; 以及读/写控制单元，形成在所述基板上并被配置为控制关于所述多根纳米线中的至少一个的读取操作和写入操作中的至少一个。