公开(公告)号：US20210407766A1

公开(公告)日：2021-12-30

申请号：US17304406

申请日：2021-06-21

Applicant: Tokyo Electron Limited

Inventor： Taro IKEDA ,  Toshifumi KITAHARA ,  Satoru KAWAKAMI

IPC: H01J37/32

Abstract: A plasma processing apparatus includes: a chamber; a substrate support provided within the chamber; a shower head made of a metal and including a plurality of gas holes open toward a space within the chamber, the shower head being provided above the substrate support; a gas supply pipe made of the metal and extending vertically above the chamber to be connected to a center of an upper portion of the shower head; an introduction part formed of a dielectric material and provided along an outer circumference of the shower head so as to introduce electromagnetic waves, which are VHF waves or UHF waves, into the chamber; and an electromagnetic wave supply path connected to the gas supply pipe, wherein the gas supply pipe includes an annular flange, and the supply path includes a conductor connected to the flange.

公开(公告)号：US20210375588A1

公开(公告)日：2021-12-02

申请号：US17299979

申请日：2019-11-26

Applicant: TOKYO ELECTRON LIMITED ,  TOHOKU UNIVERSITY

Inventor： Taro IKEDA ,  Satoru KAWAKAMI ,  Masaki HIRAYAMA

IPC: H01J37/32

Abstract: In a plasma processing apparatus and a plasma processing method, improvement of the in-plane uniformity of plasma on a stage is required. The plasma processing apparatus includes a processing container, a stage, and a dielectric plate. The stage is provided within the processing container, the dielectric plate includes a plurality of through-holes for gas injection, and an upper surface of the dielectric plate is provided with a conductive film. A space between the conductive film and the stage within the processing container is used as a plasma processing space. The dielectric plate has a central portion and an outer peripheral portion, upper surfaces of the central portion and the outer peripheral portion include flat portions, and the central portion is larger in thickness than the outer peripheral portion.

公开(公告)号：US20210111003A1

公开(公告)日：2021-04-15

申请号：US17063260

申请日：2020-10-05

Applicant: Tokyo Electron Limited

Inventor： Taro IKEDA ,  Hirokazu UEDA ,  Eiki KAMATA ,  Mitsutoshi ASHIDA ,  Isao GUNJI

IPC: H01J37/32 ,  B08B7/00

Abstract: A plasma processing method includes: supplying a gas into a processing container; and intermittently supplying microwave powers output from a plurality of microwave introducing modules into the processing container. In the intermittently supplying the microwave powers, the supply of all the microwave powers from the plurality of microwave introducing modules is periodically in an OFF state for a given time.

公开(公告)号：US20210110999A1

公开(公告)日：2021-04-15

申请号：US17063088

申请日：2020-10-05

Applicant: Tokyo Electron Limited

Inventor： Taro IKEDA ,  Hiroki EHARA

IPC: H01J37/32

Abstract: A plasma processing apparatus includes: a processing container; and a plurality of gas nozzles protruding from at least one of a top wall and a side wall that constitute the processing container, and including a gas supply hole configured to supply a gas into the processing container. The plurality of gas nozzles include an enlarged diameter portion that is enlarged from a pore of the gas supply hole at a tip end of the gas supply hole of the plurality of gas nozzles, and is opened to a processing space.

公开(公告)号：US20210074518A1

公开(公告)日：2021-03-11

申请号：US17009904

申请日：2020-09-02

Applicant: Tokyo Electron Limited

Inventor： Satoru KAWAKAMI ,  Taro IKEDA

IPC: H01J37/32 ,  C23C16/52 ,  C23C16/511 ,  C23C16/44 ,  C23C16/34

Abstract: A plasma processing apparatus includes a processing container in which a plasma processing is performed on a substrate; a plurality of microwave radiation mechanisms, a stage arranged in the processing container to accommodate the substrate thereon and including a lower heating source; and an upper heating source provided on the upper portion of the processing container and arranged at a position that faces the stage.

公开(公告)号：US20210035787A1

公开(公告)日：2021-02-04

申请号：US16942145

申请日：2020-07-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taro IKEDA ,  Mikio SATO ,  Eiki KAMATA

IPC: H01J37/32

Abstract: A plasma processing apparatus includes a main container, one or more radio frequency antennas, a plurality of metal windows, and a plasma detector. The one or more radio frequency antennas are configured to generate inductively coupled plasma in a plasma generation region in the main container. The metal windows are disposed between the plasma generation region and the radio frequency antennas while being insulated from each other and from the main container. Further, a plasma detector is connected to each of the metal windows and configured to detect a plasma state.

公开(公告)号：US20190189398A1

公开(公告)日：2019-06-20

申请号：US16214613

申请日：2018-12-10

Applicant: Tokyo Electron Limited

Inventor： Taro IKEDA ,  Tomohito KOMATSU ,  Eiki KAMATA ,  Mikio SATO

IPC: H01J37/32 ,  C23C16/511 ,  H05H1/46 ,  B01J19/08

CPC classification number: H01J37/32192 ,  B01J19/08 ,  C23C16/511 ,  H05H1/46

Abstract: A microwave plasma processing apparatus includes a microwave supply part configured to supply a microwave, and a microwave emission member provided on a ceiling of a process chamber and configured to emit the microwave supplied from the microwave supply part. A microwave transmission member is provided to close an opening provided in the ceiling and made of a dielectric substance that transmits the microwave transmitted to a slot antenna via the microwave emission member. The ceiling has at least one recess having a depth in a range of λsp/4±λsp/8 on an outer side of the opening when a wavelength of a surface wave of the microwave traveling through the microwave transmission member and propagating along a surface of the ceiling from the opening is taken as λsp.

公开(公告)号：US20190074166A1

公开(公告)日：2019-03-07

申请号：US16122226

申请日：2018-09-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taro IKEDA ,  Tomohito KOMATSU ,  Yuki OSADA ,  Hiroyuki MIYASHITA ,  Susumu SAITO ,  Kazuhiro FURUKI ,  Mikio SATO ,  Eiki KAMATA

IPC: H01J37/32

Abstract: A plasma probe device includes an antenna unit installed at an opening formed in a wall of a processing chamber or a mounting table through a sealing member configured to seal between a vacuum space and an atmospheric space, an electrode connected to the antenna unit, and a dielectric support portion made of a dielectric material and configured to support the antenna unit from an outer peripheral side. A surface of the antenna unit which is exposed through the opening and separated from a facing surface of the wall or the mounting table facing the antenna unit by a width is depressed from a surface of the wall or the mounting table where the opening is formed, which faces a plasma generation space.

公开(公告)号：US20180337023A1

公开(公告)日：2018-11-22

申请号：US15981246

申请日：2018-05-16

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taro IKEDA ,  Tomohito KOMATSU ,  Jun NAKAGOMI ,  Kei NAGAYOSI

IPC: H01J37/32 ,  C23C16/511 ,  C23C16/455

Abstract: A plasma processing apparatus includes a microwave introducing module provided at a ceiling portion of a processing chamber and configured to introduce a microwave for generating plasma of a gas into the processing chamber; and a plurality of gas supply holes formed at the ceiling portion of the processing chamber and configured to introduce the gas into a plasma processing space. Each of the plurality of gas supply holes includes a fine hole and a cavity that is expanded from the fine hole and opened to the plasma processing space. A diameter of the cavity on the plasma processing space side is 3 mm or more and is ⅛ or less of a wavelength of a surface wave of a microwave in the plasma.

公开(公告)号：US20170263421A1

公开(公告)日：2017-09-14

申请号：US15455566

申请日：2017-03-10

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taro IKEDA ,  Shigeru KASAI

IPC: H01J37/32

CPC classification number: H01J37/32266 ,  H01J37/3222 ,  H01J37/32467 ,  H01J37/32715 ,  H01J2237/332 ,  H01J2237/334

Abstract: There is provided a plasma processing apparatus including a microwave introduction part configured to radiate microwaves transmitted by a microwave transmission part inside a process container. The microwave introduction part includes a conductive member constituting a ceiling portion of the process container and having a recess formed to face the mounting surface, a plurality of slots forming a part of the conductive member and configured to radiate the microwaves transmitted via the microwave transmission part, and a microwave transmitting member fitted to the recess of the conductive member and configured to transmit and introduce the microwaves radiated from the plurality of slots into the process container. The microwave transmitting member is provided to be shared with the microwaves transmitted via transmission paths and includes an interference suppressing part configured to suppress interference of the microwaves in the microwave transmitting member.