公开(公告)号：US11037820B2

公开(公告)日：2021-06-15

申请号：US16719596

申请日：2019-12-18

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Tzu-Yang Lin ,  Cheng-Han Wu ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: H01L21/00 ,  H01L21/768 ,  H01L21/033 ,  H01L21/027

Abstract: A method for forming openings in an underlayer includes: forming a photoresist layer on an underlayer formed on a substrate; exposing the photoresist layer; forming photoresist patterns by developing the exposed photoresist layer, the photoresist patterns covering regions of the underlayer in which the openings are to be formed; forming a liquid layer over the photoresist patterns; after forming the liquid layer, performing a baking process so as to convert the liquid layer to an organic layer in a solid form; performing an etching back process to remove a portion of the organic layer on a level above the photoresist patterns; removing the photoresist patterns, so as to expose portions of the underlayer by the remaining portion of the organic layer; forming the openings in the underlayer by using the remaining portion of the organic layer as an etching mask; and removing the remaining portion of the organic layer.

公开(公告)号：US11029593B2

公开(公告)日：2021-06-08

申请号：US16660300

申请日：2019-10-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chin-Hsiang Lin ,  Chien-Cheng Chen ,  Hsin-Chang Lee ,  Chia-Jen Chen ,  Pei-Cheng Hsu ,  Yih-Chen Su ,  Gaston Lee ,  Tran-Hui Shen

IPC: G03F1/54 ,  G03F1/24 ,  G03F7/20 ,  G03F1/38 ,  G03F1/22

Abstract: A lithography mask includes a substrate, a reflective structure disposed over a first side of the substrate, and a patterned absorber layer disposed over the reflective structure. The lithography mask includes a first region and a second region that surrounds the first region in a top view. The patterned absorber layer is located in the first region. A substantially non-reflective material is located in the second region. The lithography mask is formed by forming a reflective structure over a substrate, forming an absorber layer over the reflective structure, defining a first region of the lithography mask, and defining a second region of the lithography mask. The defining of the first region includes patterning the absorber layer. The second region is defined to surround the first region in a top view. The defining of the second region includes forming a substantially non-reflective material in the second region.

公开(公告)号：US11022885B2

公开(公告)日：2021-06-01

申请号：US16119880

申请日：2018-08-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Chih Ho ,  Kuan-Hsin Lo ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  G03F7/075 ,  G03F7/11 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32

Abstract: A method includes providing a substrate; forming a bottom layer over the substrate; forming a middle layer over the bottom layer, a top surface of which including a photosensitive moiety having a first end anchored in the middle layer and a second end extending away from the top surface of the middle layer; forming a photoresist layer over the middle layer; exposing the photoresist layer to a radiation source; and developing the photoresist layer to form a pattern. The photosensitive moiety, which includes one of a photo-acid generator (PAG), a photo-base generator (PBG), photo-decomposable base (PDB), or photo-decomposable quencher (PDQ), may be anchored to a polymer backbone forming the middle layer via one or more linker groups. A distance by which the photosensitive moiety extends into the photoresist layer may be determined by a length of the linker group.

公开(公告)号：US11016386B2

公开(公告)日：2021-05-25

申请号：US16163425

申请日：2018-10-17

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： An-Ren Zi ,  Chin-Hsiang Lin ,  Ching-Yu Chang

IPC: G03F7/004 ,  G03F7/38 ,  G03F7/30 ,  G03F7/11 ,  G03F7/16 ,  H01L21/027 ,  G03F7/42 ,  G03F7/039 ,  G03F7/038 ,  G03F7/20

Abstract: A method of forming a photoresist pattern includes forming a protective layer over a photoresist layer formed on a substrate, and selectively exposing the protective layer and the photoresist layer to actinic radiation. The protective layer and the photoresist layer are developed to form a pattern in the photoresist layer, and the protective layer is removed. The protective layer includes a polymer having pendant fluorocarbon groups and pendant acid leaving groups.

公开(公告)号：US20210103213A1

公开(公告)日：2021-04-08

申请号：US17121080

申请日：2020-12-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Ren Zi ,  Joy Cheng ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: G03F7/004 ,  G03F7/32

Abstract: The present disclosure provides a method for lithography patterning in accordance with some embodiments. The method includes forming a photoresist layer over a substrate, wherein the photoresist layer includes a metal-containing chemical; performing an exposing process to the photoresist layer; and performing a first developing process to the photoresist layer using a first developer, thereby forming a patterned resist layer, wherein the first developer includes a first solvent and a chemical additive to remove metal residuals generated from the metal-containing chemical.

公开(公告)号：US10863630B2

公开(公告)日：2020-12-08

申请号：US16723818

申请日：2019-12-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Siao-Shan Wang ,  Cheng-Han Wu ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: H05K3/06 ,  G03F7/09 ,  H01L21/027 ,  G03F7/00 ,  G03F7/20 ,  G03F7/40

Abstract: Provided is a material composition and method that includes forming a patterned resist layer on a substrate. The patterned resist layer has a first pattern width, and the patterned resist layer has a first pattern profile having a first proportion of active sites. In some examples, the patterned resist layer is coated with a treatment material. In some embodiments, the treatment material bonds to surfaces of the patterned resist layer to provide a treated patterned resist layer having a second pattern profile with a second proportion of active sites greater than the first proportion of active sites. By way of example, and as part of the coating the patterned resist layer with the treatment material, a first pattern shrinkage process may be performed, where the treated patterned resist layer has a second pattern width less than a first pattern width.

公开(公告)号：US10747114B2

公开(公告)日：2020-08-18

申请号：US16549461

申请日：2019-08-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Siao-Shan Wang ,  Chen-Yu Liu ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: G03F7/20 ,  G03F7/09 ,  H01L21/027 ,  G03F7/095 ,  G03F7/038 ,  G03F7/039 ,  G03F7/16 ,  G03F7/32 ,  G03F7/38 ,  G03F7/42 ,  G03F7/11

Abstract: The present disclosure provides a method for lithography patterning in accordance with some embodiments. The method includes forming a material layer on a substrate; forming a blocking layer on the material layer, wherein a bottom portion of the blocking layer reacts with the material layer, resulting in a capping layer that seals the material layer from an upper portion of the blocking layer. The method further includes forming a photoresist layer on the blocking layer; exposing the photoresist layer; and developing the photoresist layer, resulting in a patterned photoresist layer.

公开(公告)号：US10573519B2

公开(公告)日：2020-02-25

申请号：US15906187

申请日：2018-02-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tsung-Han Ko ,  Joy Cheng ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: H01L21/027 ,  H01L21/308 ,  G03F7/20 ,  H01L21/033 ,  H01L21/266 ,  G03F7/038 ,  G03F7/40 ,  G03F7/09 ,  G03F7/039 ,  G03F7/38 ,  G03F7/26

Abstract: A method for performing a photolithography process is provided. The method includes forming a resist layer over a substrate and exposing a portion of the resist layer to form an exposed region and an unexposed region by performing an exposure process. The method includes performing a baking process on the resist layer, so that voids are formed in the exposed region of the resist layer. The method also includes removing the unexposed region of the resist layer to form a recess in the resist layer and filling a post treatment coating material in the recess and the void. The method further includes removing a portion of the post treatment coating material by performing a second develop process, and another portion of the post treatment coating material is left on surfaces of the exposed region of the resist layer to form a patterned resist layer.

公开(公告)号：US20200050098A1

公开(公告)日：2020-02-13

申请号：US16660300

申请日：2019-10-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chin-Hsiang Lin ,  Chien-Cheng Chen ,  Hsin-Chang Lee ,  Chia-Jen Chen ,  Pei-Cheng Hsu ,  Yih-Chen Su ,  Gaston Lee ,  Tran-Hui Shen

IPC: G03F1/24 ,  G03F1/38 ,  G03F1/22 ,  G03F1/54 ,  G03F7/20

Abstract: A lithography mask includes a substrate, a reflective structure disposed over a first side of the substrate, and a patterned absorber layer disposed over the reflective structure. The lithography mask includes a first region and a second region that surrounds the first region in a top view. The patterned absorber layer is located in the first region. A substantially non-reflective material is located in the second region. The lithography mask is formed by forming a reflective structure over a substrate, forming an absorber layer over the reflective structure, defining a first region of the lithography mask, and defining a second region of the lithography mask. The defining of the first region includes patterning the absorber layer. The second region is defined to surround the first region in a top view. The defining of the second region includes forming a substantially non-reflective material in the second region.

公开(公告)号：US10529552B2

公开(公告)日：2020-01-07

申请号：US15905501

申请日：2018-02-26

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yu-Ling Chang Chien ,  Chien-Chih Chen ,  Chin-Hsiang Lin ,  Ching-Yu Chang ,  Yahru Cheng

IPC: H01L21/02 ,  H01L21/311 ,  C09D125/06 ,  C09D133/12 ,  C09D125/16 ,  H01L21/027 ,  H01L21/768 ,  H01L21/033 ,  C09D125/18

Abstract: In a method of manufacturing a semiconductor device, an underlying structure is formed. A surface grafting layer is formed on the underlying structure. A photo resist layer is formed on the surface grafting layer. The surface grafting layer includes a coating material including a backbone polymer, a surface grafting unit coupled to the backbone polymer and an adhesion unit coupled to the backbone polymer.