摘要:
There is provided an image pickup apparatus comprising a plurality of pixels each including a photoelectric conversion unit which converts incident light into an electrical signal and accumulates the electrical signal, an amplifier transistor which amplifies and outputs the signal from the photoelectric conversion unit, a transfer transistor which transfers the electrical signal accumulated in the photoelectric conversion unit to the amplifier transistor, and a processing transistor which performs predetermined processing, and a control circuit which sets the signal level supplied to the control electrode of the transfer transistor in order to turn off the transfer transistor to be lower than the signal level supplied to the control electrode of the processing transistor in order to turn off the processing transistor.
摘要:
A photoelectric conversion device formed on a single semiconductor substrate, including: a plurality of photoelectric conversion elements; a read-out circuit including a switch for reading out analog signals from the photoelectric conversion elements; a buffer circuit for driving the switch; and a logic circuit for processing digital signals. A first semiconductor area to which a ground level for the buffer circuit is supplied and a second semiconductor area to which a ground level for the logic circuit is supplied are electrically separated from each other.
摘要:
A primary object of the present invention is to provide a photoelectric conversion apparatus with less leak current in a floating diffusion region. In order to obtain the above object, a photoelectric conversion apparatus according to the present invention includes a photo diode for converting light into a signal charge, a first semiconductor region having a first conductivity type, a floating diffusion region formed from a second semiconductor region having a second conductivity type for converting the signal charge generated by the photo diode into a signal voltage, the second semiconductor region being formed in the first semiconductor region, and an electrode formed above the first semiconductor region through an insulating film and having an effect of increasing a concentration of majority carriers in the first semiconductor region, in which the electrode is not formed above a depletion region formed from the second semiconductor region.
摘要:
This invention is to provide a solid-state image pickup element including a sensor unit including a plurality of lines of photoelectric conversion units for generating charges from received light by photoelectric conversion, a memory unit including a plurality of lines of storage units for storing signals from the plurality of lines of photoelectric conversion units, a transfer unit for transferring a signal from the sensor unit to the memory unit, a control unit for causing storage units of an arbitrary block in the memory unit to output an image signal from the photoelectric conversion units and causing the photoelectric conversion units corresponding to the storage units of the arbitrary block to output a noise signal, and a subtracting unit for calculating a difference between the image signal and the noise signal.
摘要:
To optimize the layout of a pixel portion, there is provided a solid-state image pickup device including a photoelectric conversion portion, a charge transfer portion for transferring signal charges generated in the photoelectric conversion portion, and an amplifier portion for amplifying a signal corresponding to the signal charges transferred from the charge transfer portion and outputting the signal, wherein a plurality of photoelectric conversion portions, a plurality of charge transfer portions, and a plurality of amplifier portions are arranged in the row or/and column directions, and the charge transfer portion and the amplifier portion which are closest to each other are connected.
摘要:
To achieve a high density, high resolution, or size reduction, there is provided a solid-state image pickup device having a plurality of photoelectric conversion elements formed in a semiconductor substrate, conductive layers formed on the semiconductor substrate between the neighboring photoelectric conversion elements via an interlayer layer, a first interlayer layer formed on the photoelectric conversion elements and conductive layers, a second interlayer layer formed on the first interlayer layer, and microlenses formed above the photoelectric conversion elements, wherein the refraction index of the first interlayer layer located above the photoelectric conversion elements is different from that of the second interlayer layer.
摘要:
Control to read signals from a sensor unit having a plurality of pixels by pixel blocks of a predetermined size, and the read signals are applied an operation to acquire distinctive information by pixel blocks of the predetermined size. The calculated distinctive information is applied to signal processes, such as signal compression, performed by a block.
摘要:
To achieve a high density, high resolution, or size reduction, there is provided a solid-state image pickup device having a plurality of photoelectric conversion elements formed in a semiconductor substrate, conductive layers formed on the semiconductor substrate between the neighboring photoelectric conversion elements via an interlayer layer, a first interlayer layer formed on the photoelectric conversion elements and conductive layers, a second interlayer layer formed on the first interlayer layer, and microlenses formed above the photoelectric conversion elements, wherein the refraction index of the first interlayer layer located above the photoelectric conversion elements is different from that of the second interlayer layer.
摘要:
A liquid crystal display driven in multiplex with a plurality of pixels arranged in a matrix comprises a main display, and at least one sub-display located at least partly around the periphery of the main display.
摘要:
A buffer circuit provided with a transistor each on the input and output terminal sides, in which the transistor has been provided in order to keep constant a difference between a collector-emitter voltage of the input terminal side transistor and that of the output terminal side transistor.