公开(公告)号：US20050194878A1

公开(公告)日：2005-09-08

申请号：US11068385

申请日：2005-03-01

申请人： Tetsuya Watanabe

发明人： Tetsuya Watanabe

IPC分类号： C22F1/14 ,  C22C5/04 ,  C22F1/00 ,  H01T13/20 ,  H01T13/39 ,  H01T21/02

CPC分类号： C22C5/04 ,  C22F1/14 ,  H01T13/39

摘要： A spark plug includes a metal shell, a center electrode secured in the metal shell and isolated from the metal shell, a ground electrode joined to the metal shell. A Pt-based chip joined to at least one of confronting portions of the center electrode and the ground electrode. The Pt-based chip has a granulated crystal structure. A range of an average grain diameter of the Pt-based chip is defined through experimental investigation so as to suppress an accumulation of crystal grains in a spark gap of the spark plug.

摘要翻译： 火花塞包括金属壳，固定在金属壳中并与金属壳隔离的中心电极，接合到金属壳的接地电极。 连接到中心电极和接地电极的相对部分中的至少一个的基于Pt的芯片。 Pt基芯片具有粒状晶体结构。 通过实验研究来定义Pt基芯片的平均粒径的范围，以抑制火花塞的火花隙中的晶粒的积聚。

公开(公告)号：US20050106352A1

公开(公告)日：2005-05-19

申请号：US10966186

申请日：2004-10-18

申请人： Tetsuya Watanabe ,  Naoki Saito

发明人： Tetsuya Watanabe ,  Naoki Saito

IPC分类号： B41M5/26 ,  C09B47/067 ,  G11B7/244 ,  G11B7/248 ,  B32B3/02

CPC分类号： C09B47/0678 ,  G11B7/248

摘要： An optical information recording medium whose recording layer includes a phthalocyanine derivative having a substituent of the following formula (I): (in the formula (I), R1, R2 and R3 each independently represent a substituent other than a hydrogen atom). A dye compound represented by the following formula (II): (in the formula (II), M represents a metal or a metal oxide each of which may have a ligand. R4, R5 and R6 each independently represent a substituent other than a hydrogen atom, and n is an integer of from 1 to 8).

摘要翻译： 一种光学信息记录介质，其记录层包括具有下式（I）的取代基的酞菁衍生物：（式（I）中，R 1，R 2， 和R 3各自独立地表示氢原子以外的取代基）。 由下式（II）表示的染料化合物：（式（II）中，M表示可以具有配体的金属或金属氧化物，R 4， 5和R 6各自独立地表示除氢原子以外的取代基，n为1〜8的整数）。

公开(公告)号：US06797975B2

公开(公告)日：2004-09-28

申请号：US09931997

申请日：2001-08-17

申请人： Hidetoshi Nishiyama ,  Minori Noguchi ,  Yoshimasa Ooshima ,  Akira Hamamatsu ,  Kenji Watanabe ,  Tetsuya Watanabe ,  Takahiro Jingu

发明人： Hidetoshi Nishiyama ,  Minori Noguchi ,  Yoshimasa Ooshima ,  Akira Hamamatsu ,  Kenji Watanabe ,  Tetsuya Watanabe ,  Takahiro Jingu

IPC分类号： G01N2188

CPC分类号： G01N21/4738 ,  G01N21/8806 ,  G01N21/93 ,  G01N21/94 ,  G01N21/9501 ,  G01N2015/1486 ,  G01N2015/1493

摘要： Conventionally, a particle/defect inspection apparatus outputs a total number of detected particles/defects as the result of detection. For taking countermeasures to failures in manufacturing processes, the particles/defects detected by the inspection apparatus are analyzed. Since the inspection apparatus outputs a large number of detected particles/defects, an immense time is required for analyzing the detected particles/defects, resulting in a delay in taking countermeasures to a failure in the manufacturing processes. In the present invention, an apparatus for optically inspecting particles or defects relates a particle or defect size to a cause of failure in an inspection result. A data processing circuit points out a cause of failure from the statistics on the inspection result, and displays information on the inspection result. A failure analysis is conducted by setting a threshold for identifying a failure in each of regions on a semiconductor device or the like to statistically evaluate detected particles.

摘要翻译： 通常，作为检测结果，粒子/缺陷检查装置输出检测出的粒子/缺陷的总数。 对于制造过程中的故障采取对策，分析检查装置检测到的颗粒/缺陷。 由于检查装置输出大量检测到的粒子/缺陷，所以需要巨大的时间来分析检测到的粒子/缺陷，从而导致制造过程中的失败的对策的延迟。 在本发明中，用于光学检查颗粒或缺陷的装置在检查结果中将颗粒或缺陷尺寸与故障原因相关联。 数据处理电路从检查结果统计中指出故障原因，并显示检查结果信息。 通过设定用于识别半导体装置等上的各区域的故障的阈值来进行故障分析，以统计学评价检测出的粒子。

公开(公告)号：US06797663B2

公开(公告)日：2004-09-28

申请号：US10258487

申请日：2002-10-25

申请人： Tetsuya Watanabe ,  Osamu Nakayama ,  Keisuke Tashiro ,  Kinichi Iwachido ,  Hiroshi Tanada

发明人： Tetsuya Watanabe ,  Osamu Nakayama ,  Keisuke Tashiro ,  Kinichi Iwachido ,  Hiroshi Tanada

IPC分类号： B01J2906

CPC分类号： B01D53/9422 ,  B01D2255/1021 ,  B01D2255/1023 ,  B01D2255/1025 ,  B01D2255/2022 ,  B01D2255/2042 ,  B01D2255/9022 ,  B01J23/58 ,  B01J23/64 ,  B01J37/0244 ,  B01J37/0246

摘要： An exhaust gas clean-up catalyst having a catalytic layer which contains, as an occluding agent, at least one (potassium and/or the like) chosen from a group consisting of alkaline metals and alkaline earth metals. The catalytic layer consists of a first catalytic layer (20) which contains the occluding agent (potassium and/or the like) and an acid material (30) having a high affinity to the occluding agent, and a second catalytic layer (40) which contains the occluding agent and does not contain the acid material.

摘要翻译： 一种具有催化层的废气净化催化剂，该催化剂层含有选自碱金属和碱土金属的至少一种（钾和/或类似物）作为阻塞剂。 催化层由含有阻塞剂（钾和/或类似物）的第一催化剂层（20）和对吸留剂具有高亲和力的酸性物质（30）和第二催化剂层（40）组成，第二催化剂层 含有阻塞剂，不含有酸性物质。

公开(公告)号：US06727034B1

公开(公告)日：2004-04-27

申请号：US09269564

申请日：1999-05-14

申请人： Naohito Ogiso ,  Tetsuya Watanabe ,  Tetsuya Yamada

发明人： Naohito Ogiso ,  Tetsuya Watanabe ,  Tetsuya Yamada

IPC分类号： G03F7012

CPC分类号： H01J29/327 ,  G03F7/0007 ,  G03F7/0125 ,  G03F7/0212 ,  G03F7/0233 ,  H01J9/2271 ,  H01J9/2278

摘要： The present invention is related to a photosensitive composition which comprises 70 to 99 weight % of a vinyl polymer (A) comprising recurring units derived from a monomer (a) of the following general formula (1) and 1 to 30 weight % of at least one photosensitive compound (B) selected from the group consisting of azide compounds and diazo compounds. H2C═CH—X—Q  (1) [wherein X is selected from the group consisting of a direct bond, a 1,4-phenylene group, a sulfonyl group, a methylene group, and an alkylene group of 2 to 5 carbon atoms (the methylene and alkylene groups may respectively have one ether, carbonyl, carboxyl, amide or urea group); Q represents a functional group selected from the group consisting of —NH—R, —COCH2COCH3, and —SO2NH2; R represents a residue selected from the group consisting of —CHO, —H (hydrogen), an alkyl group of 1 to 6 carbon atoms (the alkyl group may have one hydroxyl, ether, amino, nitro, cyano, carbonyl, carboxyl, amide, or urea group), —NH2, —N(CH3)2, —COOH, —CONH2 and —CONHCH3].

摘要翻译： 本发明涉及含有70〜99重量％乙烯基聚合物（A）的感光性组合物，该乙烯基聚合物（A）含有来源于下述通式（1）的单体（a）的重复单元和至少1〜30重量％ 一种选自叠氮化合物和重氮化合物的光敏化合物（B）[其中X选自直接键合，1,4-亚苯基，磺酰基，亚甲基和 2至5个碳原子的亚烷基（亚甲基和亚烷基可以分别具有一个醚，羰基，羧基，酰胺基或脲基）; Q表示选自-NH-R，-COCH 2 COCH 3和-SO 2 NH 2的官能团; R表示选自-CHO，-H（氢），1至6个碳原子的烷基（烷基可以具有一个羟基，醚，氨基，硝基，氰基，羰基，羧基，酰胺）的残基 ，或脲基），-NH 2，-N（CH 3）2，-COOH，-CONH 2和-CONHCH 3]。

公开(公告)号：US06177831B1

公开(公告)日：2001-01-23

申请号：US08679951

申请日：1996-07-15

申请人： Hirokazu Yoneda ,  Tetsuya Watanabe

发明人： Hirokazu Yoneda ,  Tetsuya Watanabe

IPC分类号： G05F302

CPC分类号： G11C5/146 ,  G05F3/242 ,  H03L7/06

摘要： A semiconductor integrated circuit which effects the subtle control of the well or substrate potential of a circuit in accordance with the operating frequency, the signal multiplication rate from a PLL circuit, the source voltage or the operating state of the circuit, thereby adjusting the operating speed of the circuit and reducing the consumption of electricity.

摘要翻译： 一种半导体集成电路，其根据工作频率，来自PLL电路的信号倍增速率，电源电压或电路的工作状态，对电路的阱或衬底电位进行微妙的控制，由此调整工作速度 的电路，减少电力消耗。

公开(公告)号：US6128208A

公开(公告)日：2000-10-03

申请号：US401185

申请日：1999-09-23

申请人： Niichi Itoh ,  Yasunobu Nakase ,  Tetsuya Watanabe ,  Chikayoshi Morishima

发明人： Niichi Itoh ,  Yasunobu Nakase ,  Tetsuya Watanabe ,  Chikayoshi Morishima

IPC分类号： H01L27/10 ,  H01L21/8242 ,  H01L27/108 ,  G11C5/02

CPC分类号： H01L27/10844 ,  H01L27/10897

摘要： Provided is a semiconductor memory having a layout structure in which a memory cell has excellent patterning controllability. A pattern of element components (active regions 10 to 15 and 21 to 23 and polysilicon regions 31 to 42) of a memory cell for one memory cell unit of a memory cell array region 1 is identical to that of a dummy cell of a peripheral dummy cell region 3, and both patterns present a line symmetrical relationship with respect to a boundary line BC1. In addition, a pattern of the memory cell for one memory cell unit of the memory cell array region 1 is identical to that of a dummy cell of a power wiring region 2, and both patterns present a line symmetrical relationship with respect to a boundary line BC2.

摘要翻译： 提供一种具有布局结构的半导体存储器，其中存储单元具有优异的图案化可控性。 存储单元阵列区域1的一个存储单元单元的存储单元的元件部件（有源区域10至15和21至23以及多晶硅区域31至42）的图案与外围虚拟元件的虚设单元相同 单元区域3，并且两个图案相对于边界线BC1呈现线对称关系。 此外，存储单元阵列区域1的一个存储单元单元的存储单元的图案与电力布线区域2的虚设单元的图案相同，并且两个图案相对于边界线呈现线对称关系 BC2。

公开(公告)号：US6002989A

公开(公告)日：1999-12-14

申请号：US831298

申请日：1997-04-01

申请人： Masataka Shiba ,  Kenji Watanabe ,  Toshimitsu Hamada ,  Seiji Ishikawa ,  Naoki Go ,  Toshiaki Yachi ,  Tetsuya Watanabe ,  Takahiro Jingu

发明人： Masataka Shiba ,  Kenji Watanabe ,  Toshimitsu Hamada ,  Seiji Ishikawa ,  Naoki Go ,  Toshiaki Yachi ,  Tetsuya Watanabe ,  Takahiro Jingu

IPC分类号： G01N21/84 ,  B23Q41/08 ,  G05B19/418 ,  G06Q50/00 ,  G06Q50/04 ,  H01L21/66 ,  G06F15/18

CPC分类号： H01L22/20 ,  G05B19/41875 ,  H01L22/12 ,  H01L2924/0002 ,  Y02P90/14 ,  Y02P90/18 ,  Y02P90/22

摘要： Inspection apparatuses of an inspection apparatus group are connected to a network and transfer inspected result to a data collection system. The same wafer selected from a specific process is inspected by the different inspection apparatuses and the inspected data are collected and analyzed to calculate a correlation degree among the inspection apparatuses. On the other hand, the course of occurrence of failures in the same process can be analyzed to thereby calculate an average occurrence frequency of failures. An optimum inspection apparatus and inspection frequency are successively obtained on the basis of calculated results of an inter-apparatus correlation degree calculation process and a failure occurrence frequency calculation process, so that a feeding method of wafers to the inspection apparatus group is indicated through an inspection apparatus group management system. In the manufacturing of electronic components, complicated conditions such as the optimum inspection apparatus to be applied, the inspection frequency and the like can be set easily and the expected total loss value can be minimized to improve the economical efficiency of inspection remarkably.

摘要翻译： 检查装置组的检查装置连接到网络并将检查结果传送到数据收集系统。 通过不同的检查装置检查从具体处理中选出的相同的晶片，收集和分析检查数据，以计算检查装置之间的相关度。 另一方面，可以分析相同处理中的故障发生的过程，从而计算故障的平均发生频率。 基于设备间相关度计算处理和故障发生频率计算处理的计算结果连续获得最佳检查装置和检查频率，从而通过检查来指示晶片向检查装置组的馈送方法 设备组管理系统。 在电子部件的制造中，可以容易地设定诸如要应用的最佳检查装置等复杂的条件，并且可以将预期的总损失值最小化，从而提高检查的经济性。

公开(公告)号：US5959213A

公开(公告)日：1999-09-28

申请号：US891105

申请日：1997-07-10

申请人： Kyoichi Ikeda ,  Tetsuya Watanabe ,  Satoshi Fukuhara ,  Takashi Yoshida ,  Hideo Tsukamoto

发明人： Kyoichi Ikeda ,  Tetsuya Watanabe ,  Satoshi Fukuhara ,  Takashi Yoshida ,  Hideo Tsukamoto

IPC分类号： G01L9/00 ,  G01L9/06 ,  G01L13/02 ,  G01L19/04 ,  G01L9/04

CPC分类号： G01L13/025 ,  G01L15/00 ,  G01L9/0054 ,  G01L9/045

摘要： A semiconductor differential pressure measuring device comprising two measurement diaphragms and two detection sensors provided in a semiconductor substrate using micromachining techniques, and a computing circuit which computes the differences between the two sensor outputs, wherein a communicating hole is provided for applying pressure to each diaphragm so that the diaphragms operate in opposite phases by differential pressure, and two detecting sensors are provided on each diaphragm for detecting displacement or strain of each diaphragm caused by the differential pressure applied to the respective diaphragm, whereby detecting the differences in displacement or strain cancels the static pressure error and temperature error so that the invention has excellent temperature and static pressure characteristics, and whereby the computing circuit comprises a bridge using the two detecting sensors, which substantially reduces the cost of the device.

摘要翻译： 一种半导体差压测量装置，包括使用微加工技术设置在半导体衬底中的两个测量膜片和两个检测传感器，以及计算电路，其计算两个传感器输出之间的差异，其中设置有用于向每个隔膜施加压力的连通孔 膜片通过差压在相反的相位下工作，并且在每个隔膜上设置两个检测传感器，用于检测由施加到各个隔膜的差压引起的每个隔膜的位移或应变，由此检测位移或应变的差异消除了静态 压力误差和温度误差，使得本发明具有优异的温度和静压特性，并且由此计算电路包括使用两个检测传感器的桥，这大大降低了装置的成本。

公开(公告)号：US5880828A

公开(公告)日：1999-03-09

申请号：US898598

申请日：1997-07-22

申请人： Hisato Nakamura ,  Yoshio Morishige ,  Tetsuya Watanabe

发明人： Hisato Nakamura ,  Yoshio Morishige ,  Tetsuya Watanabe

IPC分类号： G01N21/94 ,  G01N21/00

CPC分类号： G01N21/94

摘要： A surface defect inspection device according to the present invention is provided with an average value calculating means in which an article corresponding to an object to be inspected having a multiplicity of substantially uniformly distributed standard particles deposited thereon is scanned in a main scanning direction as a defect inspection object, detection values of the standard particles at every detecting pixel are obtained based on detection signals obtained from an optical sensor at respective scanning positions while assuming the standard particles as being defects and average values of every detecting pixel with regard to the detection values obtained at the respective scanning positions are calculated, and a shading correction means in which detection values of every detecting pixel obtained when the object to be inspected is inspected are subjected to shading correction for every detecting pixel based on the calculated average values of every detecting pixel.

摘要翻译： 根据本发明的表面缺陷检查装置设置有平均值计算装置，其中与主要扫描方向上扫描具有沉积在其上的多个大致均匀分布的标准颗粒的待检查对象的物品作为缺陷 检测对象中，基于从各个扫描位置处的光学传感器获得的检测信号，将标准粒子作为缺陷而得到的各检测像素的标准粒子的检测值，以及所获取的检测值的每个检测像素的平均值 计算各扫描位置，并且根据所计算出的每个检测像素的平均值，对检测对象物检测出的每个检测像素的检测值进行阴影校正，对每个检测像素进行阴影校正。