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公开(公告)号：US07352023B2
公开(公告)日：2008-04-01
申请号：US11485592
申请日：2006-07-11
申请人： Cem Basceri , F. Daniel Gealy , Gurtej S. Sandhu
发明人： Cem Basceri , F. Daniel Gealy , Gurtej S. Sandhu
IPC分类号： H01L27/108 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： H01G4/33 , H01G4/1209 , H01G4/1272 , H01L21/31645 , H01L27/10852 , H01L28/60 , H01L28/65 , H01L28/90 , H01L28/91 , H01L29/7833
摘要： The invention includes methods of forming hafnium-containing materials, such as, for example, hafnium oxide. In one aspect, a semiconductor substrate is provided, and first reaction conditions are utilized to form hafnium-containing seed material in a desired crystalline phase and orientation over the substrate. Subsequently, second reaction conditions are utilized to grow second hafnium-containing material over the seed material. The second hafnium-containing material is in a crystalline phase and/or orientation different from the crystalline phase and orientation of the hafnium-containing seed material. The second hafnium-containing material can be, for example, in an amorphous phase. The seed material is then utilized to induce a desired crystalline phase and orientation in the second hafnium-containing material. The invention also includes capacitor constructions utilizing hafnium-containing materials, and circuit assemblies comprising the capacitor constructions.
摘要翻译： 本发明包括形成含铪材料的方法，例如氧化铪。 在一个方面，提供了半导体衬底，并且利用第一反应条件来形成在衬底上所需的结晶相和取向的含铪种子材料。 随后，利用第二反应条件在种子材料上生长第二含铪材料。 第二含铪材料处于与含铪种子材料的结晶相和取向不同的结晶相和/或取向。 第二含铪材料可以是例如非晶相。 然后将种子材料用于在第二含铪材料中诱导所需的结晶相和取向。 本发明还包括使用含铪材料的电容器结构和包括电容器结构的电路组件。
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公开(公告)号：US07323737B2
公开(公告)日：2008-01-29
申请号：US11517209
申请日：2006-09-06
申请人： Cem Basceri , F. Daniel Gealy , Gurtej S. Sandhu
发明人： Cem Basceri , F. Daniel Gealy , Gurtej S. Sandhu
IPC分类号： H01L27/108 , H01L23/48 , H01L21/8234
CPC分类号： H01L27/10855 , H01L27/10852 , H01L28/40 , H01L28/57
摘要： The invention includes methods in which metal oxide dielectric materials are deposited over barrier layers. The barrier layers can comprise compositions of metal and one or more of carbon, boron and nitrogen, and the metal oxide of the dielectric material can comprise the same metal as the barrier layer. The dielectric material/barrier layer constructions can be incorporated into capacitors. The capacitors can be used in, for example, DRAM cells, which in turn can be used in electronic systems.
摘要翻译： 本发明包括其中金属氧化物电介质材料沉积在阻挡层上的方法。 阻挡层可以包括金属和碳，硼和氮中的一种或多种的组合物，并且介电材料的金属氧化物可以包含与阻挡层相同的金属。 电介质材料/阻挡层结构可以结合到电容器中。 电容器可以用在例如DRAM单元中，DRAM单元又可以用在电子系统中。
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公开(公告)号：US07303991B2
公开(公告)日：2007-12-04
申请号：US10863048
申请日：2004-06-07
申请人： Demetrius Sarigiannis , Garo J. Derderian , Cem Basceri , Gurtej S. Sandhu , F. Daniel Gealy , Chris M. Carlson
发明人： Demetrius Sarigiannis , Garo J. Derderian , Cem Basceri , Gurtej S. Sandhu , F. Daniel Gealy , Chris M. Carlson
IPC分类号： H01L21/44
CPC分类号： H01L21/32051 , C23C16/4404 , C23C16/4405 , C23C16/45531 , C23C16/45534 , H01L21/02178 , H01L21/02186 , H01L21/0228 , H01L21/28562 , H01L21/3141 , H01L21/31616
摘要： The invention includes an atomic layer deposition method of forming a layer of a deposited composition on a substrate. The method includes positioning a semiconductor substrate within an atomic layer deposition chamber. On the substrate, an intermediate composition monolayer is formed, followed by a desired deposited composition from reaction with the intermediate composition, collectively from flowing multiple different composition deposition precursors to the substrate within the deposition chamber. A material adheres to a chamber internal component surface from such sequentially forming. After such sequentially forming, a reactive gas flows to the chamber which is different in composition from the multiple different deposition precursors and which is effective to react with such adhering material. After the reactive gas flowing, such sequentially forming is repeated. Further implementations are contemplated.
摘要翻译： 本发明包括在基板上形成沉积的组合物层的原子层沉积方法。 该方法包括将半导体衬底定位在原子层沉积室内。 在基材上形成中间体组合物单层，随后是与中间体组合物反应所需的沉积组合物，共同地将多个不同的组合物沉积前体流入沉积室内的基底。 材料粘附到室内部件表面，从而依次形成。 在这种顺序形成之后，反应性气体流入到与多种不同的沉积前体不同的组合物中并且有效地与这种粘附材料反应的室。 在反应气体流动之后，重复这种顺序形成。 考虑进一步的实现。
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公开(公告)号：US07091101B2
公开(公告)日：2006-08-15
申请号：US10299728
申请日：2002-11-19
IPC分类号： H01L21/20
CPC分类号： H01L28/90 , H01G4/33 , H01L23/5223 , H01L28/55 , H01L28/65 , H01L28/84 , H01L28/91 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a device is disclosed. The method includes forming a capacitor, and forming the capacitor includes forming a first electrode. The first electrode includes at least one non-smooth surface and is formed from a material selected from the group consisting of transition metals, conductive oxides, alloys thereof, and combinations thereof. Forming the capacitor also includes forming a dielectric on the first electrode, and forming a second electrode on the dielectric. The second electrode includes at least one non-smooth surface.
摘要翻译： 公开了一种形成装置的方法。 该方法包括形成电容器，并且形成电容器包括形成第一电极。 第一电极包括至少一个非光滑表面，并且由选自过渡金属，导电氧化物，其合金及其组合的材料形成。 形成电容器还包括在第一电极上形成电介质，并在电介质上形成第二电极。 第二电极包括至少一个非光滑表面。
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公开(公告)号：US07026222B2
公开(公告)日：2006-04-11
申请号：US10299752
申请日：2002-11-19
IPC分类号： H01L21/20 , H01L21/8242
CPC分类号： H01L28/90 , H01G4/33 , H01L23/5223 , H01L28/55 , H01L28/65 , H01L28/84 , H01L28/91 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a capacitor is disclosed. The method includes forming a substrate assembly, and forming a first electrode on the substrate assembly. The first electrode includes at least one non-smooth surface and is formed from a material selected from the group consisting of transition metals, conductive oxides, alloys thereof, and combinations thereof. The method further includes forming a dielectric on the first electrode and an uppermost surface of the substrate assembly, and forming a second electrode on the dielectric and the uppermost surface of the substrate assembly. The second electrode includes at least one non-smooth surface.
摘要翻译： 公开了形成电容器的方法。 该方法包括形成衬底组件，以及在衬底组件上形成第一电极。 第一电极包括至少一个非光滑表面，并且由选自过渡金属，导电氧化物，其合金及其组合的材料形成。 所述方法还包括在所述第一电极和所述基板组件的最上表面上形成电介质，以及在所述电介质和所述基板组件的最上表面上形成第二电极。 第二电极包括至少一个非光滑表面。
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公开(公告)号：US06900497B2
公开(公告)日：2005-05-31
申请号：US10792762
申请日：2004-03-05
IPC分类号： H01G4/008 , H01G4/33 , H01L21/00 , H01L21/02 , H01L21/8242 , H01L21/8246 , H01L27/108 , H01L27/115 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L27/11502 , H01G4/008 , H01G4/33 , H01L27/10852 , H01L27/11507 , H01L28/55 , H01L28/65 , H01L28/75 , H01L28/91
摘要： A ferroelectric or high dielectric constant capacitor having a multilayer lower electrode comprising at least two layers—a platinum layer and a platinum-rhodium layer—for use in a random access memory (RAM) cell. The platinum layer of the lower electrode adjoins the capacitor dielectric, which is a ferroelectric or high dielectric constant dielectric such as BST, PZT, SBT or tantalum pentoxide. The platinum-rhodium layer serves as an oxidation barrier and may also act as an adhesion layer for preventing separation of the lower electrode from the substrate, thereby improving capacitor performance. The multilayer electrode may have titanium and/or titanium nitride layers under the platinum-rhodium layer for certain applications. The capacitor has an upper electrode which may be a conventional electrode or which may have a multilayer structure similar to that of the lower electrode. Processes for manufacturing the multilayer lower electrode and the capacitor are also disclosed.
摘要翻译： 一种铁电或高介电常数电容器，其具有包括至少两层的多层下电极 - 铂层和铂 - 铑层，用于随机存取存储器（RAM）单元。 下电极的铂层与电容器电介质接触，电容器电介质是铁电或高介电常数电介质，如BST，PZT，SBT或五氧化二钽。 铂 - 铑层用作氧化屏障，并且还可以用作防止下电极与衬底分离的粘合层，从而提高电容器性能。 对于某些应用，多层电极可以在铂 - 铑层下方具有钛和/或氮化钛层。 电容器具有可以是常规电极的上电极，或者可以具有与下电极类似的多层结构。 还公开了用于制造多层下电极和电容器的工艺。
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77.发明授权System and method for inhibiting imprinting of capacitor structures of a memory 有权用于抑制存储器的电容器结构的印记的系统和方法公开(公告)号：US06781864B2
公开(公告)日：2004-08-24
申请号：US10346643
申请日：2003-01-16
申请人： Cem Basceri , F. Daniel Gealy
发明人： Cem Basceri , F. Daniel Gealy
IPC分类号： G11C1122
CPC分类号： G11C11/22
摘要： A system and method for inhibiting the imprinting of capacitor structures employed by memory cells by occasionally changing charge states of the capacitors to a complementary charge state.
摘要翻译： 一种用于通过偶尔将电容器的电荷状态改变为互补电荷状态来抑制存储器单元采用的电容器结构的压印的系统和方法。
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公开(公告)号：US06777739B2
公开(公告)日：2004-08-17
申请号：US09930960
申请日：2001-08-17
IPC分类号： H01L31119
CPC分类号： H01L27/11502 , H01G4/008 , H01G4/33 , H01L27/10852 , H01L27/11507 , H01L28/55 , H01L28/65 , H01L28/75 , H01L28/91
摘要： A ferroelectric or high dielectric constant capacitor having a multilayer lower electrode comprising at least two layers—a platinum layer and a platinum-rhodium layer—for use in a random access memory (RAM) cell. The platinum layer of the lower electrode adjoins the capacitor dielectric, which is a ferroelectric or high dielectric constant dielectric such as BST, PZT, SBT or tantalum pentoxide. The platinum-rhodium layer serves as an oxidation barrier and may also act as an adhesion layer for preventing separation of the lower electrode from the substrate, thereby improving capacitor performance. The multilayer electrode may have titanium and/or titanium nitride layers under the platinum-rhodium layer for certain applications. The capacitor has an upper electrode which may be a conventional electrode or which may have a multilayer structure similar to that of the lower electrode. Processes for manufacturing the multilayer lower electrode and the capacitor are also disclosed.
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公开(公告)号：US06627508B1
公开(公告)日：2003-09-30
申请号：US09684069
申请日：2000-10-06
IPC分类号： H01G4002
CPC分类号： H01L28/40 , H01G4/10 , H01L21/28568 , H01L21/3145 , H01L21/31604 , H01L28/56
摘要： The invention pertains to semiconductor circuit components and capacitors, and to methods of forming capacitors and semiconductor circuit components. In one aspect, the invention includes a method of forming a dielectric layer comprising: a) forming a first tantalum-comprising layer; and b) forming a second tantalum-comprising layer over the first tantalum-comprising layer, the second tantalum-comprising layer comprising nitrogen. In another aspect, the invention includes a method of forming a capacitor comprising: a) forming a first capacitor plate; b) forming a first layer over the first capacitor plate, the first layer comprising tantalum and oxygen; c) annealing the first layer in the presence of an ambient comprising a nitrogen-comprising gas containing at least one compound selected from a group consisting of ammonia, hydrazine and hydrazoic acid; the annealing forming a second layer over the first layer; and d) forming a second capacitor plate over the second layer. In another aspect, the invention includes a capacitor comprising: a) a first capacitor plate; b) a first tantalum-comprising layer over the first capacitor plate; c) a second tantalum-comprising layer over the first tantalum-comprising layer, the second tantalum-comprising layer comprising nitrogen; and d) a second capacitor plate over the second tantalum-comprising layer. In another aspect, the invention includes a component comprising: a) a first tantalum-comprising layer; and b) a second tantalum-comprising layer over the first tantalum-comprising layer, the second tantalum-comprising layer comprising nitrogen.
摘要翻译： 本发明涉及半导体电路部件和电容器，以及形成电容器和半导体电路部件的方法。 一方面，本发明包括一种形成电介质层的方法，包括：a）形成第一含钽层; 以及b）在所述第一含钽层上形成第二含钽层，所述第二含钽层包含氮。 另一方面，本发明包括形成电容器的方法，包括：a）形成第一电容器板; b）在第一电容器板上形成第一层，第一层包括钽和氧; c）在包含含有至少一种选自氨，肼和叠氮酸的化合物的含氮气体的环境存在下退火第一层; 所述退火在所述第一层上形成第二层; 以及d）在所述第二层上形成第二电容器板。 另一方面，本发明包括一种电容器，包括：a）第一电容器板; b）在第一电容器板上的第一钽包层; c）在所述第一含钽层上的第二含钽层，所述第二含钽层包含氮; 以及d）在所述第二含钽层上的第二电容器板。 在另一方面，本发明包括一种组分，其包含：a）第一含钽层; 以及b）在所述第一含钽层上的第二钽包覆层，所述第二含钽层包含氮。
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80.发明授权公开(公告)号：US06610211B1
公开(公告)日：2003-08-26
申请号：US09516422
申请日：2000-03-01
IPC分类号： B08B940
CPC分类号： C23C16/4405 , Y10S438/905 , Y10S438/911
摘要： The invention encompasses methods of processing internal surfaces of a chemical vapor deposition reactor. In one implementation, material is deposited over internal surfaces of a chemical vapor deposition reactor while processing semiconductor substrates therein. The deposited material is treated with atomic oxygen. After the treating, at least some of the deposited material is etched from the reactor internal surfaces. In one embodiment, first etching is conducted of some of the deposited material from the reactor internal surfaces. After the first etching, remaining deposited material is treated with atomic oxygen. After the treating, second etching is conducted of at least some of the remaining deposited material from the reactor internal surfaces. In one embodiment, the deposited material is first treated with atomic oxygen. After the first treating, first etching is conducted of some of the deposited material from the reactor internal surfaces. After the first etching, second treating is conducted of remaining deposited material with atomic oxygen. After the second treating, second etching is conducted of at least some of the remaining deposited material from the reactor internal surfaces.
摘要翻译： 本发明包括处理化学气相沉积反应器的内表面的方法。 在一个实施方式中，材料沉积在化学气相沉积反应器的内表面上，同时在其中处理半导体衬底。 沉积的材料用原子氧处理。 在处理之后，从反应器内表面蚀刻至少一些沉积的材料。 在一个实施例中，从反应器内表面进行一些沉积材料的第一蚀刻。 在第一蚀刻之后，用原子氧处理剩余的沉积材料。 在处理之后，对来自反应器内表面的至少一些剩余的沉积材料进行第二蚀刻。 在一个实施例中，首先用原子氧处理沉积的材料。 在第一次处理之后，从反应器内表面进行一些沉积材料的第一蚀刻。 在第一蚀刻之后，用原子氧进行剩余的沉积材料的第二次处理。 在第二次处理之后，从反应器内表面进行至少一些剩余的沉积材料的第二蚀刻。
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