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公开(公告)号：US07687844B2
公开(公告)日：2010-03-30
申请号：US12052124
申请日：2008-03-20
IPC分类号： H01L27/108
CPC分类号： H01L28/65 , H01L27/1085 , H01L27/10852 , H01L27/1087 , H01L28/84 , H01L29/66181
摘要： The invention includes a method of depositing a noble metal. A substrate is provided. The substrate has a first region and a second region. The first and second regions are exposed to a mixture comprising a precursor of a noble metal and an oxidant. During the exposure, a layer containing the noble metal is selectively deposited onto the first region relative to the second region. In particular applications, the first region can comprise borophosphosilicate glass, and the second region can comprise either aluminum oxide or doped non-oxidized silicon. The invention also includes capacitor constructions and methods of forming capacitor constructions.
摘要翻译： 本发明包括沉积贵金属的方法。 提供基板。 衬底具有第一区域和第二区域。 第一和第二区域暴露于包含贵金属和氧化剂的前体的混合物中。 在曝光期间，包含贵金属的层相对于第二区域选择性地沉积在第一区域上。 在具体应用中，第一区域可以包括硼磷硅酸盐玻璃，并且第二区域可以包括氧化铝或掺杂的非氧化硅。 本发明还包括电容器结构和形成电容器结构的方法。
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公开(公告)号：US06858894B2
公开(公告)日：2005-02-22
申请号：US10773780
申请日：2004-02-09
IPC分类号： H01L21/02 , H01L21/334 , H01L21/4763 , H01L21/8242 , H01L27/108 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： H01L28/65 , H01L27/1085 , H01L27/10852 , H01L27/1087 , H01L28/84 , H01L29/66181
摘要： The invention includes a method of depositing a noble metal. A substrate is provided. The substrate has a first region and a second region. The first and second regions are exposed to a mixture comprising a precursor of a noble metal and an oxidant. During the exposure, a layer containing the noble metal is selectively deposited onto the first region relative to the second region. In particular applications, the first region can comprise borophosphosilicate glass, and the second region can comprise either aluminum oxide or doped non-oxidized silicon. The invention also includes capacitor constructions and methods of forming capacitor constructions.
摘要翻译： 本发明包括沉积贵金属的方法。 提供基板。 衬底具有第一区域和第二区域。 第一和第二区域暴露于包含贵金属和氧化剂的前体的混合物中。 在曝光期间，包含贵金属的层相对于第二区域选择性地沉积在第一区域上。 在具体应用中，第一区域可以包括硼磷硅酸盐玻璃，并且第二区域可以包括氧化铝或掺杂的非氧化硅。 本发明还包括电容器结构和形成电容器结构的方法。
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公开(公告)号：US07141847B2
公开(公告)日：2006-11-28
申请号：US11015689
申请日：2004-12-17
IPC分类号： H01L29/94 , H01L21/842
CPC分类号： H01L28/65 , H01L27/1085 , H01L27/10852 , H01L27/1087 , H01L28/84 , H01L29/66181
摘要： The invention includes a method of depositing a noble metal. A substrate is provided. The substrate has a first region and a second region. The first and second regions are exposed to a mixture comprising a precursor of a noble metal and an oxidant. During the exposure, a layer containing the noble metal is selectively deposited onto the first region relative to the second region. In particular applications, the first region can comprise borophosphosilicate glass, and the second region can comprise either aluminum oxide or doped non-oxidized silicon. The invention also includes capacitor constructions and methods of forming capacitor constructions.
摘要翻译： 本发明包括沉积贵金属的方法。 提供基板。 衬底具有第一区域和第二区域。 第一和第二区域暴露于包含贵金属和氧化剂的前体的混合物中。 在曝光期间，包含贵金属的层相对于第二区域选择性地沉积在第一区域上。 在具体应用中，第一区域可以包括硼磷硅酸盐玻璃，并且第二区域可以包括氧化铝或掺杂的非氧化硅。 本发明还包括电容器结构和形成电容器结构的方法。
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4.发明授权Capacitor having an electrode formed from a transition metal or a conductive metal-oxide, and method of forming same 失效具有由过渡金属或导电金属氧化物形成的电极的电容器及其形成方法公开(公告)号：US06696718B1
公开(公告)日：2004-02-24
申请号：US09286807
申请日：1999-04-06
IPC分类号： H01L27108
CPC分类号： H01L28/90 , H01G4/33 , H01L23/5223 , H01L28/55 , H01L28/65 , H01L28/84 , H01L28/91 , H01L2924/0002 , H01L2924/00
摘要： A capacitor including a first electrode selected from a group consisting of transition metals, conductive metal-oxides, alloys thereof, and combinations thereof. The capacitor also includes a second electrode and a dielectric between the first and second electrodes. The present invention may be used to form devices, such as memory devices and processors. The present invention also includes a method of making a capacitor. The method includes forming a first electrode selected from a group consisting of transition metals, conductive metal-oxides, and alloys thereof. The method also includes forming a second electrode and forming a dielectric between the first and second electrodes.
摘要翻译： 一种电容器，包括从由过渡金属，导电金属氧化物，其合金组成的组中选择的第一电极及其组合。 电容器还包括第一电极和第二电极之间的第二电极和电介质。 本发明可以用于形成诸如存储器件和处理器之类的器件。 本发明还包括制造电容器的方法。 该方法包括形成选自过渡金属，导电金属氧化物及其合金的第一电极。 该方法还包括形成第二电极并在第一和第二电极之间形成电介质。
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公开(公告)号：US06682969B1
公开(公告)日：2004-01-27
申请号：US09652863
申请日：2000-08-31
IPC分类号： H01L2100
CPC分类号： H01L28/65 , H01L21/31637 , H01L21/31691 , H01L23/5222 , H01L27/10852 , H01L28/56 , H01L28/60 , H01L2924/0002 , H01L2924/00
摘要： An improved charge storing device and methods for providing the same, the charge storing device comprising a conductor-insulator-conductor (CIC) sandwich. The CIC sandwich comprises a first conducting layer deposited on a semiconductor integrated circuit. The CIC sandwich further comprises a first insulating layer deposited over the first conducting layer in a flush manner. The first insulating layer comprises a structure having a plurality of oxygen cites and a plurality of oxygen atoms that partially fill the oxygen cites, wherein the unfilled oxygen cites define a concentration of oxygen vacancies. The CIC sandwich further comprises a second conducting layer deposited over the first insulating layer in a strongly oxidizing ambient so as to reduce the concentration of oxygen vacancies in the first insulating layer, so as to provide an oxygen-rich interface layer between the first insulating layer and the second conducting layer, and so as to trap a plurality of oxygen atoms within the second conducting layer. The oxygen-rich interface layer and second conducting layer act as oxygen vacancy sinks for absorbing migrating oxygen vacancies that originate from the first insulating layer to thereby reduce the concentration of oxygen vacancies in the first insulating layer and to thereby reduce the buildup of oxygen vacancies at the interface layer. Thus, the first insulating layer provides an increased dielectric constant and an increased resistance to current flowing therethrough so as to increase the capacitance of the CIC sandwich and so as to reduce leakage currents flowing through the CIC sandwich.
摘要翻译： 一种改进的电荷存储装置及其提供方法，电荷存储装置包括导体 - 绝缘体导体（CIC）三明治。 CIC夹层包括沉积在半导体集成电路上的第一导电层。 CIC夹层还包括以齐平方式沉积在第一导电层上的第一绝缘层。 第一绝缘层包括具有多个氧化物和部分填充氧化物的多个氧原子的结构，其中未填充的氧气定义氧空位的浓度。 CIC夹层还包括在强氧化环境中沉积在第一绝缘层上的第二导电层，以便降低第一绝缘层中氧空位的浓度，从而在第一绝缘层之间提供富氧界面层 和第二导电层，以便在第二导电层内捕获多个氧原子。 富氧界面层和第二导电层用作氧空位吸收器，用于吸收源于第一绝缘层的迁移氧空位，从而降低第一绝缘层中氧空位的浓度，从而减少氧空位的累积 接口层。 因此，第一绝缘层提供增加的介电常数和增加的电流流过其中，从而增加CIC夹层的电容，并且减少流过CIC夹层的漏电流。
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公开(公告)号：US07091101B2
公开(公告)日：2006-08-15
申请号：US10299728
申请日：2002-11-19
IPC分类号： H01L21/20
CPC分类号： H01L28/90 , H01G4/33 , H01L23/5223 , H01L28/55 , H01L28/65 , H01L28/84 , H01L28/91 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a device is disclosed. The method includes forming a capacitor, and forming the capacitor includes forming a first electrode. The first electrode includes at least one non-smooth surface and is formed from a material selected from the group consisting of transition metals, conductive oxides, alloys thereof, and combinations thereof. Forming the capacitor also includes forming a dielectric on the first electrode, and forming a second electrode on the dielectric. The second electrode includes at least one non-smooth surface.
摘要翻译： 公开了一种形成装置的方法。 该方法包括形成电容器，并且形成电容器包括形成第一电极。 第一电极包括至少一个非光滑表面，并且由选自过渡金属，导电氧化物，其合金及其组合的材料形成。 形成电容器还包括在第一电极上形成电介质，并在电介质上形成第二电极。 第二电极包括至少一个非光滑表面。
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公开(公告)号：US07026222B2
公开(公告)日：2006-04-11
申请号：US10299752
申请日：2002-11-19
IPC分类号： H01L21/20 , H01L21/8242
CPC分类号： H01L28/90 , H01G4/33 , H01L23/5223 , H01L28/55 , H01L28/65 , H01L28/84 , H01L28/91 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a capacitor is disclosed. The method includes forming a substrate assembly, and forming a first electrode on the substrate assembly. The first electrode includes at least one non-smooth surface and is formed from a material selected from the group consisting of transition metals, conductive oxides, alloys thereof, and combinations thereof. The method further includes forming a dielectric on the first electrode and an uppermost surface of the substrate assembly, and forming a second electrode on the dielectric and the uppermost surface of the substrate assembly. The second electrode includes at least one non-smooth surface.
摘要翻译： 公开了形成电容器的方法。 该方法包括形成衬底组件，以及在衬底组件上形成第一电极。 第一电极包括至少一个非光滑表面，并且由选自过渡金属，导电氧化物，其合金及其组合的材料形成。 所述方法还包括在所述第一电极和所述基板组件的最上表面上形成电介质，以及在所述电介质和所述基板组件的最上表面上形成第二电极。 第二电极包括至少一个非光滑表面。
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公开(公告)号：US20080166572A1
公开(公告)日：2008-07-10
申请号：US12052124
申请日：2008-03-20
IPC分类号： B32B9/04
CPC分类号： H01L28/65 , H01L27/1085 , H01L27/10852 , H01L27/1087 , H01L28/84 , H01L29/66181
摘要： The invention includes a method of depositing a noble metal. A substrate is provided. The substrate has a first region and a second region. The first and second regions are exposed to a mixture comprising a precursor of a noble metal and an oxidant. During the exposure, a layer containing the noble metal is selectively deposited onto the first region relative to the second region. In particular applications, the first region can comprise borophosphosilicate glass, and the second region can comprise either aluminum oxide or doped non-oxidized silicon. The invention also includes capacitor constructions and methods of forming capacitor constructions.
摘要翻译： 本发明包括沉积贵金属的方法。 提供基板。 衬底具有第一区域和第二区域。 第一和第二区域暴露于包含贵金属和氧化剂的前体的混合物中。 在曝光期间，包含贵金属的层相对于第二区域选择性地沉积在第一区域上。 在具体应用中，第一区域可以包括硼磷硅酸盐玻璃，并且第二区域可以包括氧化铝或掺杂的非氧化硅。 本发明还包括电容器结构和形成电容器结构的方法。
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公开(公告)号：US07372094B2
公开(公告)日：2008-05-13
申请号：US11591254
申请日：2006-10-31
IPC分类号： H01L27/108
CPC分类号： H01L28/65 , H01L27/1085 , H01L27/10852 , H01L27/1087 , H01L28/84 , H01L29/66181
摘要： The invention includes a method of depositing a noble metal. A substrate is provided. The substrate has a first region and a second region. The first and second regions are exposed to a mixture comprising a precursor of a noble metal and an oxidant. During the exposure, a layer containing the noble metal is selectively deposited onto the first region relative to the second region. In particular applications, the first region can comprise borophosphosilicate glass, and the second region can comprise either aluminum oxide or doped non-oxidized silicon. The invention also includes capacitor constructions and methods of forming capacitor constructions.
摘要翻译： 本发明包括沉积贵金属的方法。 提供基板。 衬底具有第一区域和第二区域。 第一和第二区域暴露于包含贵金属和氧化剂的前体的混合物中。 在曝光期间，包含贵金属的层相对于第二区域选择性地沉积在第一区域上。 在具体应用中，第一区域可以包括硼磷硅酸盐玻璃，并且第二区域可以包括氧化铝或掺杂的非氧化硅。 本发明还包括电容器结构和形成电容器结构的方法。
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10.发明授权Capacitor having an electrode formed from a transition metal or a conductive metal-oxide, and method of forming same 失效具有由过渡金属或导电金属氧化物形成的电极的电容器及其形成方法公开(公告)号：US06960513B2
公开(公告)日：2005-11-01
申请号：US09770699
申请日：2001-01-26
CPC分类号： H01L28/90 , H01G4/33 , H01L23/5223 , H01L28/55 , H01L28/65 , H01L28/84 , H01L28/91 , H01L2924/0002 , H01L2924/00
摘要： A capacitor including a first electrode selected from a group consisting of transition metals, conductive metal-oxides, alloys thereof, and combinations thereof. The capacitor also includes a second electrode and a dielectric between the first and second electrodes. The present invention may be used to form devices, such as memory devices and processors. The present invention also includes a method of making a capacitor. The method includes forming a first electrode selected from a group consisting of transition metals, conductive metal-oxides, and alloys thereof. The method also includes forming a second electrode and forming a dielectric between the first and second electrodes.
摘要翻译： 一种电容器，包括从由过渡金属，导电金属氧化物，其合金组成的组中选择的第一电极及其组合。 电容器还包括第一电极和第二电极之间的第二电极和电介质。 本发明可以用于形成诸如存储器件和处理器之类的器件。 本发明还包括制造电容器的方法。 该方法包括形成选自过渡金属，导电金属氧化物及其合金的第一电极。 该方法还包括形成第二电极并在第一和第二电极之间形成电介质。
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