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168 条记录 (耗时 0.025 秒)

    Recording medium and tape drive suitable for the same
    71.
    发明授权
    Recording medium and tape drive suitable for the same 有权
    录音媒体和磁带机适合相同

    公开(公告)号：US06501612B1

    公开(公告)日：2002-12-31

    申请号：US09407197

    申请日：1999-09-28

    申请人： Tatsuya Kato ,  Katsumi Ikeda ,  Yoshihisa Takayama

    发明人： Tatsuya Kato ,  Katsumi Ikeda ,  Yoshihisa Takayama

    IPC分类号： G11B1518

    CPC分类号： G11B23/042 ,  G11B15/07 ,  G11B23/08714 ,  G11B27/107 ,  G11B27/11 ,  G11B27/328 ,  G11B2220/655 ,  G11B2220/90

    摘要： A tape drive device including a tape driver for information recording or reproduction is performed on a magnetic tape when a tape cassette having the magnetic tape accommodated therein is loaded, a memory driver through which when a memory for recording management information to manage the recording or reproduction to the magnetic tape is provided to the tape cassette, read-out or writing of the management information from/into the memory can be performed, a detector for detecting storage capacity information of the memory which is stored in the memory, and an identifier for identifying the storage capacity of the memory on the basis of the storage capacity information.

    摘要翻译： 当装载有磁带的带盒被装入时，包括用于信息记录或再现的磁带驱动器的磁带驱动装置被执行在磁带上;存储器驱动器，当用于记录用于管理记录或再现的管理信息的存储器时 提供给磁带的磁带可以执行管理信息从存储器的读取或写入，用于检测存储在存储器中的存储器的存储容量信息的检测器和用于存储在存储器中的存储器的标识符 基于存储容量信息来识别存储器的存储容量。

    Method of producing alumina particles
    72.
    发明授权
    Method of producing alumina particles 失效
    生产氧化铝颗粒的方法

    公开(公告)号：US06335052B1

    公开(公告)日：2002-01-01

    申请号：US09487294

    申请日：2000-01-19

    申请人： Hiroshi Suzuki ,  Tatsuya Kato

    发明人： Hiroshi Suzuki ,  Tatsuya Kato

    IPC分类号： B01J1302

    CPC分类号： C01F7/021 ,  C01F7/02 ,  C01P2004/61 ,  C01P2004/62 ,  C01P2004/84 ,  C01P2006/10 ,  Y10T428/2982 ,  Y10T428/2991 ,  Y10T428/2993 ,  Y10T428/2996 ,  Y10T428/2998

    摘要： Size-enlarged sludge particles 12 having nuclei of objective particles and having a particle size in a range of from 1 &mgr;m inclusive to 2000 &mgr;m exclusive are mixed with slurry containing fine alumina powder so that a mixture is prepared. Then, the mixture is dried by removal of the water content in the mixture. Then, the mixture is baked at a temperature in a range of from 1200° C. to 1500° C. so that alumina on surfaces of the size-enlarged sludge particles 12 are sintered. By the aforementioned method, light-weight alumina particles can be produced with the particle size controlled well to a uniform value.

    摘要翻译： 将具有目标颗粒核并具有1μm以上2000μm以下的粒径的尺寸扩大的污泥粒子12与含有氧化铝微粉末的浆料混合，制成混合物。 然后，通过除去混合物中的含水量来干燥混合物。 然后，将混合物在1200℃至1500℃的温度范围内烘烤，从而烧结尺寸增大的污泥颗粒12的表面上的氧化铝。 通过上述方法，可以制备轻质氧化铝颗粒，其粒径控制得很好，达到均匀的值。

    Optical recording medium
    74.
    发明授权
    Optical recording medium 失效
    光记录介质

    公开(公告)号：US6040030A

    公开(公告)日：2000-03-21

    申请号：US153294

    申请日：1998-09-15

    申请人： Hajime Utsunomiya ,  Tatsuya Kato ,  Hiroyasu Inoue

    发明人： Hajime Utsunomiya ,  Tatsuya Kato ,  Hiroyasu Inoue

    IPC分类号： G11B7/00 ,  G11B7/0045 ,  G11B7/005 ,  G11B7/0055 ,  G11B7/006 ,  G11B7/007 ,  G11B7/125 ,  G11B7/30 ,  B32B3/00

    CPC分类号： G11B7/006 ,  G11B7/00718 ,  G11B7/00454 ,  G11B7/00557 ,  Y10S428/913 ,  Y10S430/146 ,  Y10T428/21

    摘要： A method for recording/reproducing an optical recording medium of phase change type is provided. The method enables a high density recording while increase in the cross erase is suppressed. The method also enables an accurate tracking while increase in the crosstalk is suppressed. The method is adapted for use with an optical recording medium of phase change type comprising a substrate having a thickness of up to 0.8 mm wherein lands and grooves on opposite sides of the land are formed on the surface, and both the lands and the grooves are used as recording tracks, and the medium is overwritten at a recording power Pw (mW) and an erasing power Pe (mW) which meet the relation: (Pw/Pe).times.k.sup.2 .ltoreq.8.5, when the medium has a recording track pitch P (.mu.m), the recording/reproducing optical system has a numerical aperture NA, and the recording/reproducing light has a wavelength .lambda. (.mu.m) which meet the relation: k=(.lambda./NA)/P.gtoreq.1.78.

    摘要翻译： 提供了一种用于记录/再现相变型光记录介质的方法。 该方法能够进行高密度记录，同时抑制交叉擦除的增加。 该方法还能够进行精确的跟踪，同时抑制串扰的增加。 该方法适用于包括厚度高达0.8mm的基板的相变型光记录介质，其中在该表面上形成有焊盘相对两侧的焊盘和凹槽，并且焊盘和凹槽均为 用作记录轨道，并且当介质具有记录轨道间距时，记录功率Pw（mW）和满足关系式（Pw / Pe）xk2 <8.5的擦除功率Pe（mW）被覆盖介质 P（μm），记录/再现光学系统具有数值孔径NA，并且记录/再现光具有满足以下关系的波长λ（μm）：k =（λ/NA)/P>/=1.78 。

    Key telephone system comprising only one control lead per outside line
    76.
    发明授权
    Key telephone system comprising only one control lead per outside line 失效
    每个外线仅包括一个控制线的钥匙电话系统

    公开(公告)号：US4168403A

    公开(公告)日：1979-09-18

    申请号：US874088

    申请日：1978-02-01

    申请人： Mamoru Senzai ,  Tatsuya Kato

    发明人： Mamoru Senzai ,  Tatsuya Kato

    IPC分类号： H04Q3/58 ,  H04M9/00 ,  H04Q5/02 ,  H04Q5/20

    CPC分类号： H04Q5/02 ,  H04M9/005

    摘要： A key telephone system for a predetermined number of outside lines comprises only one control lead shared per outside line by cables connected between a key service unit and key telephone sets, respectively. Each telephone set has manually operable keys for supplying a higher voltage to a relevant control lead while an outside line is selected for an answer or a reanswer to a call present thereon and substituting a lower voltage for the higher voltage when it is desired to hold an answered call. Associated with each outside line and with the control lead therefor, the service unit comprises a unit comprising, in turn, a signal producing circuit for producing a first and a second intermittent signal while a call present on the associated line is not yet held and placed on hold, respectively, a supply circuit supplied with each intermittent signal for supplying a corresponding one of a flashing and a winking signal to the associated lead, a detector for detecting noncorrespondence of a signal supplied to the supply circuit and a signal supplied to the associated lead to produce a control signal, and a hold circuit responsive to the lower voltage supplied to the associated lead for holding the call. The control signal stops production of the first intermittent signal and takes the call off hold when produced while the call is not yet held and placed on hold, respectively. Outside line status indicating lamps are connected in each telephone set to the respective control leads.

    摘要翻译： 用于预定数量的外线的密钥电话系统仅分别由连接在密钥服务单元和密钥电话机之间的电缆的每个外线共享的一个控制线。 每个电话机具有用于向相关控制线提供较高电压的手动操作键，而当期望保持一个或多个时，选择外部线路作为应答或重新呼叫存在于其上的呼叫并且替换较低电压以获得较高电压 回电话。 与每个外线和控制线相关联，服务单元包括一个单元，该单元包括信号产生电路，用于产生第一和第二间歇信号，同时存在于相关线路上的呼叫尚未被保持和放置 分别设置一个供应电路，每个间歇信号用于向相关联的引线提供闪烁和闪烁信号中的相应的一个信号;检测器，用于检测提供给供应电路的信号的不相关性，以及提供给相关联的信号的信号 导致产生控制信号，并且保持电路响应于提供给相关引线的较低电压来保持呼叫。 控制信号停止产生第一间歇信号，并且在呼叫尚未保持并分别保持时产生时产生呼叫保持。 外线状态指示灯在每个电话机中连接到相应的控制引线。

    Semiconductor device and manufacturing method thereof
    78.
    发明授权
    Semiconductor device and manufacturing method thereof 有权
    半导体装置及其制造方法

    公开(公告)号：US08324094B2

    公开(公告)日：2012-12-04

    申请号：US13186712

    申请日：2011-07-20

    申请人： Masato Endo ,  Tatsuya Kato

    发明人： Masato Endo ,  Tatsuya Kato

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/76816 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31144 ,  H01L27/11519 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor device includes a plurality of first interconnection layers which are provided in an insulating layer and formed in a pattern having a width and space smaller than a resolution limit of an exposure technique, and a second interconnection layer which is provided between the first interconnection layers in the insulating layer and has a width larger than that of a first interconnection layer. A space between the second interconnection layer and each of first interconnection layers adjacent to both sides of the second interconnection layer equals the space between the first interconnection layers.

    摘要翻译： 一种半导体器件包括：多个第一互连层，其设置在绝缘层中，并且形成为具有比曝光技术的分辨率极限小的宽度和间隔的图案;以及第二互连层，设置在第一互连层 在绝缘层中并且具有比第一互连层的宽度更大的宽度。 第二互连层与与第二互连层的两侧相邻的每个第一互连层之间的间隔等于第一互连层之间的空间。

    Semiconductor device and manufacturing method thereof
    79.
    发明授权
    Semiconductor device and manufacturing method thereof 有权

    公开(公告)号：US08288272B2

    公开(公告)日：2012-10-16

    申请号：US13186712

    申请日：2011-07-20

    申请人： Masato Endo ,  Tatsuya Kato

    发明人： Masato Endo ,  Tatsuya Kato

    IPC分类号： H01L21/4763

    摘要： A semiconductor device includes a plurality of first interconnection layers which are provided in an insulating layer and formed in a pattern having a width and space smaller than a resolution limit of an exposure technique, and a second interconnection layer which is provided between the first interconnection layers in the insulating layer and has a width larger than that of a first interconnection layer. A space between the second interconnection layer and each of first interconnection layers adjacent to both sides of the second interconnection layer equals the space between the first interconnection layers.

    Electrical inspection substrate unit and manufacturing method therefore
    80.
    发明授权
    Electrical inspection substrate unit and manufacturing method therefore 有权
    电检基板单元及其制造方法

    公开(公告)号：US08193456B2

    公开(公告)日：2012-06-05

    申请号：US12493732

    申请日：2009-06-29

    申请人： Hiroyuki Takahashi ,  Chie Honda ,  Tatsuya Kato ,  Tomohide Yamada ,  Shigeru Taga

    发明人： Hiroyuki Takahashi ,  Chie Honda ,  Tatsuya Kato ,  Tomohide Yamada ,  Shigeru Taga

    IPC分类号： H05K1/00 ,  H05K3/02

    CPC分类号： H05K3/4611 ,  G01R1/0491 ,  G01R3/00 ,  G01R31/2863 ,  H05K1/0306 ,  H05K1/113 ,  H05K3/388 ,  H05K3/4629 ,  H05K2201/0347 ,  H05K2203/025 ,  H05K2203/308 ,  Y10T29/49155

    摘要： An electrical testing substrate unit includes a multi-layer ceramic substrate formed of mullite and a borosilicate glass as predominant ceramic components. In the multi-layer ceramic substrate, the borosilicate glass contains an alkali metal oxide in an amount of 0.5 to 1.5 mass %. The multi-layer ceramic substrate has a mean coefficient of linear thermal expansion having a value of 3.0 to 4.0 ppm/° C. between −50° C. and 150° C. A thermal expansion coefficient, α1, of the multi-layer ceramic substrate as determined at a particular temperature and a thermal expansion coefficient, α2, of a to-be-tested silicon wafer as determined at the same temperature silicon satisfy a relation: 0 ppm/° C.

    摘要翻译： 电测试衬底单元包括由莫来石和硼硅酸盐玻璃作为主要陶瓷组分形成的多层陶瓷衬底。 在多层陶瓷基板中，硼硅酸玻璃含有0.5〜1.5质量％的碱金属氧化物。 多层陶瓷基板在-50℃〜150℃之间具有3.0〜4.0ppm /℃的平均线性热膨胀系数。多层陶瓷的热膨胀系数α1 在相同温度下测定的待测硅晶片的特定温度下的基板和热膨胀系数α2满足关系：0ppm /℃。<α1-α2＆nlE; 2.5ppm /° C.在-50℃至150℃的温度范围内。电极形成在多层陶瓷衬底的表面上。