公开(公告)号：US20090297732A1

公开(公告)日：2009-12-03

申请号：US12291305

申请日：2008-11-06

申请人： Kai-Li Jiang ,  Qun-Qing Li ,  Liang Liu ,  Shou-Shan Fan

发明人： Kai-Li Jiang ,  Qun-Qing Li ,  Liang Liu ,  Shou-Shan Fan

IPC分类号： C23C16/56 ,  C23C16/26 ,  C23C14/34 ,  B05D3/00

CPC分类号： C23C16/56 ,  B01J23/745 ,  B01J23/75 ,  B01J23/755 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  C01B2202/08 ,  C01B2202/34 ,  C23C16/0281 ,  C23C16/26 ,  Y10S977/843

摘要： A method for making a carbon nanotube film, the method comprising the following steps of: (a) supplying a substrate; (b) forming at least one strip-shaped catalyst film on the substrate, a width of the strip-shaped catalyst films ranging from approximately 1 micrometer to 20 micrometers; (c) growing at least one strip-shaped carbon nanotube array on the substrate using a chemical vapor deposition method; and (d) causing the at least one strip-shaped carbon nanotube array to fold along a direction parallel to a surface of the substrate, thus forming at least one carbon nanotube film.

摘要翻译： 一种制造碳纳米管膜的方法，该方法包括以下步骤：（a）供给基材; （b）在基底上形成至少一个条状催化剂膜，条形催化剂膜的宽度为约1微米至20微米; （c）使用化学气相沉积法在衬底上生长至少一个带状碳纳米管阵列; 和（d）使所述至少一个带状碳纳米管阵列沿着与所述基板的表面平行的方向折叠，从而形成至少一个碳纳米管膜。

公开(公告)号：US20090283753A1

公开(公告)日：2009-11-19

申请号：US12384293

申请日：2009-04-02

申请人： Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

发明人： Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

IPC分类号： H01L29/66

CPC分类号： H01L51/0558 ,  B82Y10/00 ,  H01L51/0012 ,  H01L51/0048 ,  H01L51/0541 ,  H01L51/0545

摘要： A thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, and a gate electrode. The drain electrode is spaced from the source electrode. The semiconducting layer is electrically connected to the source electrode and the drain electrode. The semiconductor layer comprises a plurality of carbon nanotubes. A semiconductor layer comprising a plurality of carbon nanotubes electrically connected to the source electrode and the drain electrode, the plurality of carbon nanotubes having almost the same length are substantially parallel to each other and are joined side by side via van der Waals attractive force therebetween. The gate electrode is insulated from the source electrode, the drain electrode, and the semiconducting layer by an insulating layer.

摘要翻译： 薄膜晶体管包括源电极，漏电极，半导体层和栅电极。 漏电极与源电极间隔开。 半导电层电连接到源电极和漏电极。 半导体层包括多个碳纳米管。 包含与源电极和漏电极电连接的多个碳纳米管的半导体层，具有几乎相同长度的多个碳纳米管基本上彼此平行并且通过其间的范德华力的吸引力并排连接。 栅电极通过绝缘层与源电极，漏电极和半导体层绝缘。

公开(公告)号：US20090258163A1

公开(公告)日：2009-10-15

申请号：US12291299

申请日：2008-11-06

申请人： Hai-Lin Sun ,  Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

发明人： Hai-Lin Sun ,  Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

IPC分类号： C23C16/513 ,  B05D1/36 ,  B05D3/00 ,  C23C16/00 ,  C23C14/34 ,  C23C14/35 ,  C23C14/54

CPC分类号： C01B33/06 ,  C30B23/00 ,  C30B29/10 ,  C30B29/60

摘要： A method for making nickel silicide nano-wire, the method includes the following steps. Firstly, providing a silicon substrate and a growing device, and the growing device including a reacting room. Secondly, forming a silicon dioxide layer on a surface of the silicon substrate. Thirdly, forming a titanium layer on the silicon dioxide layer. Fourthly, placing the silicon substrate into the reacting room, and heating the reacting room to a temperature of 500˜1000° C. Finally, forming a plurality of nickel cluster onto the surface of the silicon substrate.

摘要翻译： 一种制造硅化镍纳米线的方法，该方法包括以下步骤。 首先，提供硅衬底和生长装置，并且生长装置包括反应室。 其次，在硅衬底的表面上形成二氧化硅层。 第三，在二氧化硅层上形成钛层。 第四，将硅衬底放入反应室中，并将反应室加热到500〜1000℃的温度。最后，在硅衬底的表面上形成多个镍簇。

公开(公告)号：US20090255459A1

公开(公告)日：2009-10-15

申请号：US12286217

申请日：2008-09-29

申请人： Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

发明人： Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

IPC分类号： C30B25/10

CPC分类号： C01G9/03 ,  B82Y30/00 ,  C01P2004/03 ,  C01P2004/13

摘要： A method for making zinc oxide nano-structure, the method includes the following steps. Firstly, providing a growing device, the growing device comprising a heating apparatus and a reacting room. Secondly, providing a growing substrate and forming a metal layer thereon. Thirdly, depositing a catalyst layer on the metal layer. Fourthly, placing the growing substrate into the reacting room together with a quantity of zinc source material. Fifthly, introducing a oxygen-containing gas into the reacting room. Lastly, heating the reacting room to a temperature range of 500˜1100° C.

摘要翻译： 一种制备氧化锌纳米结构的方法，该方法包括以下步骤。 首先，提供增长装置，该生长装置包括加热装置和反应室。 其次，提供生长的衬底并在其上形成金属层。 第三，在金属层上沉积催化剂层。 第四，将生长的基材与一定量的锌源材料一起放置在反应室中。 第五，向反应室中引入含氧气体。 最后，将反应室加热至500〜1100℃的温度范围。

公开(公告)号：US08815398B2

公开(公告)日：2014-08-26

申请号：US12583391

申请日：2009-08-20

申请人： Kai-Li Jiang ,  Chen Feng ,  Lin Xiao ,  Zhuo Chen ,  Liang Liu ,  Shou-Shan Fan ,  Qun-Qing Li ,  Li Qian ,  Kai Liu ,  Yang Wei

发明人： Kai-Li Jiang ,  Chen Feng ,  Lin Xiao ,  Zhuo Chen ,  Liang Liu ,  Shou-Shan Fan ,  Qun-Qing Li ,  Li Qian ,  Kai Liu ,  Yang Wei

IPC分类号： B32B9/00

CPC分类号： G06F3/045 ,  B82Y30/00 ,  Y10T428/26 ,  Y10T428/30

摘要： A carbon nanotube film includes a plurality of first carbon nanotubes and a plurality of second carbon nanotubes. The first carbon nanotubes are orientated primarily along a same direction. The second carbon nanotubes have different orientations from that of the plurality of first carbon nanotubes. Each of at least one portion of the second carbon nanotubes contacts with at least two adjacent first carbon nanotubes.

摘要翻译： 碳纳米管膜包括多个第一碳纳米管和多个第二碳纳米管。 第一碳纳米管主要沿相同的方向取向。 第二碳纳米管具有与多个第一碳纳米管不同的取向。 第二碳纳米管的至少一部分中的每一个与至少两个相邻的第一碳纳米管接触。

公开(公告)号：US08603304B2

公开(公告)日：2013-12-10

申请号：US13588222

申请日：2012-08-17

申请人： Hai-Lin Sun ,  Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

发明人： Hai-Lin Sun ,  Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

IPC分类号： C23C14/34

CPC分类号： C01B33/06 ,  C30B23/00 ,  C30B29/10 ,  C30B29/60

摘要： A method for making nickel silicide nano-wire, the method includes the following steps. Firstly, a silicon substrate and a growing device, and the growing device including a reacting room are provided. Secondly, a silicon dioxide layer is formed on a surface of the silicon substrate. Thirdly, a titanium layer is formed on the silicon dioxide layer. Fourthly, the silicon substrate is placed into the reacting room, and the reacting room is heated to a temperature of 500˜1000° C. Finally, a plurality of nickel cluster is formed onto the surface of the silicon substrate.

摘要翻译： 一种制造硅化镍纳米线的方法，该方法包括以下步骤。 首先，提供硅衬底和生长装置，并且提供包括反应室的生长装置。 其次，在硅衬底的表面上形成二氧化硅层。 第三，在二氧化硅层上形成钛层。 第四，将硅衬底放置在反应室中，并将反应室加热到500〜1000℃的温度。最后，在硅衬底的表面上形成多个镍簇。

公开(公告)号：US08288723B2

公开(公告)日：2012-10-16

申请号：US12005741

申请日：2007-12-28

申请人： Li-Na Zhang ,  Chen Feng ,  Liang Liu ,  Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

发明人： Li-Na Zhang ,  Chen Feng ,  Liang Liu ,  Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

IPC分类号： H01J37/26

CPC分类号： H01J37/20 ,  H01J37/26 ,  Y10T29/49002

摘要： A transmission electron microscope (TEM) micro-grid includes a metallic grid and a carbon nanotube film structure covered thereon. A method for making a TEM micro-grid includes the steps of: (a) providing an array of carbon nanotubes, quite suitably, providing a super-aligned array of carbon nanotubes; (b) drawing a carbon nanotube film from the array of carbon nanotubes; (c) covering the carbon nanotube film on a metallic grid, and treating the carbon nanotube film and the metallic grid with an organic solvent.

摘要翻译： 透射电子显微镜（TEM）微格栅包括金属栅格和覆盖在其上的碳纳米管膜结构。 制造TEM微格栅的方法包括以下步骤：（a）提供碳纳米管阵列，非常合适地提供碳纳米管的超对准阵列; （b）从碳纳米管阵列中抽出碳纳米管膜; （c）在金属网格上覆盖碳纳米管膜，并用有机溶剂处理碳纳米管膜和金属栅格。

公开(公告)号：US08053760B2

公开(公告)日：2011-11-08

申请号：US12384238

申请日：2009-04-02

申请人： Chang-Hong Liu ,  Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

发明人： Chang-Hong Liu ,  Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

IPC分类号： H01L29/786

CPC分类号： H01L51/0558 ,  B82Y10/00 ,  H01L51/0012 ,  H01L51/0013 ,  H01L51/0048 ,  H01L51/0541 ,  H01L51/0545

摘要： A thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, and a gate electrode. The drain electrode is spaced from the source electrode. The semiconducting layer includes a carbon nanotube structure comprised of carbon nanotubes. The gate electrode is insulated from the source electrode, the drain electrode, and the semiconducting layer by an insulating layer. The carbon nanotube structure is connected to both the source electrode and the drain electrode, and an angle exist between each carbon nanotube of the carbon nanotube structure and a surface of the semiconductor layer, and the angle ranges from about 0 degrees to about 15 degrees.

摘要翻译： 薄膜晶体管包括源电极，漏电极，半导体层和栅电极。 漏电极与源电极间隔开。 半导体层包括由碳纳米管构成的碳纳米管结构。 栅电极通过绝缘层与源电极，漏电极和半导体层绝缘。 碳纳米管结构与源电极和漏电极连接，并且在碳纳米管结构的每个碳纳米管和半导体层的表面之间存在角度，角度范围为约0度至约15度。

公开(公告)号：US07947977B2

公开(公告)日：2011-05-24

申请号：US12384309

申请日：2009-04-02

申请人： Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

发明人： Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

IPC分类号： H01L35/24

CPC分类号： H01L29/458 ,  B82Y10/00 ,  H01L29/4908 ,  H01L51/0048 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/102 ,  Y10S977/742 ,  Y10S977/762 ,  Y10S977/936

摘要： A thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, and a gate electrode. The drain electrode is spaced from the source electrode. The semiconducting layer is electrically connected to the source electrode and the drain electrode. The gate electrode is insulated from the source electrode, the drain electrode, and the semiconducting layer by an insulating layer. The at least one of the source electrode, drain electrode, and the gate electrode includes a metallic carbon nanotube layer. The metallic carbon nanotube layer includes a plurality of metallic carbon nanotubes.

摘要翻译： 薄膜晶体管包括源电极，漏电极，半导体层和栅电极。 漏电极与源电极间隔开。 半导电层电连接到源电极和漏电极。 栅电极通过绝缘层与源电极，漏电极和半导体层绝缘。 源电极，漏电极和栅电极中的至少一个包括金属碳纳米管层。 金属碳纳米管层包括多个金属碳纳米管。

公开(公告)号：US07923731B2

公开(公告)日：2011-04-12

申请号：US12384292

申请日：2009-04-02

申请人： Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

发明人： Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

IPC分类号： H01L29/76 ,  H01L31/036 ,  H01L31/112

CPC分类号： H01L51/0558 ,  B82Y10/00 ,  H01L51/0048 ,  H01L51/0541 ,  H01L51/0545

摘要： A thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, and a gate electrode. The drain electrode is spaced from the source electrode. The semiconducting layer is connected to the source electrode and the drain electrode. The gate electrode is insulated from the source electrode, the drain electrode, and the semiconducting layer by an insulating layer. The semiconducting layer includes a carbon nanotube layer, and the carbon nanotube layer comprises a plurality of semiconducting carbon nanotubes.

摘要翻译： 薄膜晶体管包括源电极，漏电极，半导体层和栅电极。 漏电极与源电极间隔开。 半导体层连接到源电极和漏电极。 栅电极通过绝缘层与源电极，漏电极和半导体层绝缘。 半导体层包括碳纳米管层，碳纳米管层包含多个半导体碳纳米管。