公开(公告)号：US07416370B2

公开(公告)日：2008-08-26

申请号：US11154129

申请日：2005-06-15

申请人： John M. de Larios ,  Mike Ravkin ,  John Parks ,  Mikhail Korolik ,  Fred C. Redeker

发明人： John M. de Larios ,  Mike Ravkin ,  John Parks ,  Mikhail Korolik ,  Fred C. Redeker

IPC分类号： B65G51/16

CPC分类号： H01L21/67784 ,  H01L21/67057

摘要： A method for transporting a substrate is provided. In this method, a non-Newtonian fluid is provided and the substrate is suspended in the non-Newtonian fluid. The non-Newtonian fluid is capable of supporting the substrate. Thereafter, a supply force is applied on the non-Newtonian fluid to cause the non-Newtonian fluid to flow, whereby the flow is capable of moving the substrate along a direction of the flow. Apparatuses and systems for transporting the substrate using the non-Newtonian fluid also are described.

摘要翻译： 提供了一种输送基板的方法。 在该方法中，提供了非牛顿流体，并将基底悬挂在非牛顿流体中。 非牛顿流体能够支撑基底。 此后，向非牛顿流体施加供应力以使非牛顿流体流动，由此流动能够沿着流动方向移动基底。 还描述了使用非牛顿流体输送基底的装置和系统。

公开(公告)号：US07368017B2

公开(公告)日：2008-05-06

申请号：US10734704

申请日：2003-12-12

申请人： Fred C. Redeker ,  John Boyd ,  Yezdi Dordi ,  William Thie ,  Bob Maraschin

发明人： Fred C. Redeker ,  John Boyd ,  Yezdi Dordi ,  William Thie ,  Bob Maraschin

IPC分类号： B05C3/02

CPC分类号： H01L21/7684 ,  C23C18/06 ,  C23C18/1216 ,  C23C18/1225 ,  C23C18/1291 ,  C23C18/14 ,  H01L21/288

摘要： Broadly speaking, the present invention provides a method and an apparatus for planarizing a semiconductor wafer (“wafer”). More specifically, the present invention provides for depositing a planarizing layer over the wafer, wherein the planarizing layer serves to fill recessed areas present on a surface of the wafer. A planar member is positioned over and proximate to a top surface of the wafer. Positioning of the planar member serves to entrap electroless plating solution between the planar member and the wafer surface. Radiant energy is applied to the wafer surface to cause a temperature increase at an interface between the wafer surface and the electroless plating solution. The temperature increase in turn causes plating reactions to occur at the wafer surface. Material deposited through the plating reactions forms a planarizing layer that conforms to a planarity of the planar member.

摘要翻译： 广义而言，本发明提供了一种用于平面化半导体晶片（“晶片”）的方法和装置。 更具体地，本发明提供了在晶片上沉积平坦化层，其中平坦化层用于填充存在于晶片表面上的凹陷区域。 平面构件定位在晶片的顶表面上方并靠近晶片的顶表面。 平面构件的定位用于在平面构件和晶片表面之间夹带化学镀溶液。 辐射能量被施加到晶片表面以在晶片表面和化学镀溶液之间的界面处引起温度升高。 温度升高又会导致电镀反应发生在晶片表面。 通过电镀反应沉积的材料形成符合平面构件平坦度的平坦化层。

公开(公告)号：US07040332B2

公开(公告)日：2006-05-09

申请号：US10377943

申请日：2003-02-28

申请人： John M. Boyd ,  Fred C. Redeker ,  Randolph E. Treur ,  William Thie

发明人： John M. Boyd ,  Fred C. Redeker ,  Randolph E. Treur ,  William Thie

IPC分类号： B08B3/12

CPC分类号： H01L21/67057 ,  B08B3/12 ,  Y10S134/902

摘要： A system for cleaning a substrate includes a tank defining an inner cavity between a base and sidewalls extending therefrom. A source of acoustic energy affixed to an outer surface of one of the sidewalls. The tank is configured to decouple a direction associated with the acoustic energy from the source of acoustic energy and direct the acoustic energy toward the substrate.

摘要翻译： 用于清洁基底的系统包括限定在基底和从其延伸的侧壁之间的内腔的罐。 声能源固定在一个侧壁的外表面上。 该箱被配置成将与声能相关联的方向与声能源分离，并将声能引导到基板。

公开(公告)号：US06988327B2

公开(公告)日：2006-01-24

申请号：US10404692

申请日：2003-03-31

申请人： James P. Garcia ,  John M. de Larios ,  Michael Ravkin ,  Fred C. Redeker ,  Carl Woods

发明人： James P. Garcia ,  John M. de Larios ,  Michael Ravkin ,  Fred C. Redeker ,  Carl Woods

IPC分类号： F26B5/04

CPC分类号： C25D5/22 ,  C25D7/12 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/68707 ,  Y10S134/902

摘要： A system and method of moving a meniscus from a first surface to a second surface includes forming a meniscus between a head and a first surface. The meniscus can be moved from the first surface to an adjacent second surface, the adjacent second surface being parallel to the first surface. The system and method of moving the meniscus can also be used to move the meniscus along an edge of a substrate.

公开(公告)号：US06864181B2

公开(公告)日：2005-03-08

申请号：US10402600

申请日：2003-03-27

申请人： Fred C. Redeker ,  John Boyd

发明人： Fred C. Redeker ,  John Boyd

IPC分类号： H01L21/288 ,  H01L21/768 ,  H01L21/311 ,  C03C15/00 ,  H01L23/48

CPC分类号： H01L21/288 ,  H01L21/7684

摘要： A planarized conductive material is formed over a substrate including narrow and wide features. The conductive material is formed through a succession of deposition processes. A first deposition process forms a first layer of the conductive material that fills the narrow features and at least partially fills the wide features. A second deposition process forms a second layer of the conductive material within cavities in the first layer. A flexible material can reduce a thickness of the first layer above the substrate while delivering a solution to the cavities to form the second layer therein. The flexible material can be a porous membrane attached to a pressurizable reservoir filled with the solution. The flexible material can also be a poromeric material wetted with the solution.

摘要翻译： 在包括窄和宽的特征的衬底上形成平坦化的导电材料。 导电材料通过一系列沉积工艺形成。 第一沉积工艺形成导电材料的第一层，其填充窄特征并且至少部分地填充宽的特征。 第二沉积工艺在第一层的空腔内形成导电材料的第二层。 柔性材料可以减小衬底之上的第一层的厚度，同时将溶液递送到空腔以在其中形成第二层。 柔性材料可以是连接到填充有溶液的可加压储存器的多孔膜。 柔性材料也可以是用溶液润湿的多孔体材料。

公开(公告)号：US06273806B1

公开(公告)日：2001-08-14

申请号：US09350754

申请日：1999-07-09

申请人： Doyle E. Bennett ,  Fred C. Redeker ,  Thomas H. Osterheld ,  Ginnetto Addiego

发明人： Doyle E. Bennett ,  Fred C. Redeker ,  Thomas H. Osterheld ,  Ginnetto Addiego

IPC分类号： B24D1100

CPC分类号： B24B37/26

摘要： A polishing pad for a chemical mechanical polishing apparatus. The polishing pad includes a plurality of circular concentric grooves. The polishing pad may include multiple regions with grooves of different widths and spacings.

摘要翻译： 一种用于化学机械抛光装置的抛光垫。 抛光垫包括多个圆形同心凹槽。 抛光垫可以包括具有不同宽度和间隔的凹槽的多个区域。

公开(公告)号：US5800621A

公开(公告)日：1998-09-01

申请号：US795169

申请日：1997-02-10

申请人： Fred C. Redeker ,  Tetsuya Ishikawa

发明人： Fred C. Redeker ,  Tetsuya Ishikawa

IPC分类号： C23C16/50 ,  H01J37/32 ,  H01L21/205 ,  H01L21/31 ,  H05H1/46 ,  C23C16/00

CPC分类号： H01J37/321 ,  H05H1/46 ,  H05H2001/4667

摘要： A plasma system is disclosed for processing a substrate and includes a chamber body defining a plasma cavity therein and having a centrally located gas inlet, and a top antenna configured in position relative to the plasma cavity to produce a center-peaked plasma density profile above the substrate during operation. The top antenna has a central passage which surrounds the centrally located gas inlet. A side antenna is preferably configured and positioned relative to the plasma chamber to produce a hollow-center plasma density profile above the substrate during operation. Together, the top and side antennas and the centrally located gas inlet provide a uniform plasma directly over the surface of the substrate to be processed.

公开(公告)号：US08608859B2

公开(公告)日：2013-12-17

申请号：US12768349

申请日：2010-04-27

申请人： Erik M. Freer ,  John M. deLarios ,  Katrina Mikhaylichenko ,  Michael Ravkin ,  Mikhail Korolik ,  Fred C. Redeker

发明人： Erik M. Freer ,  John M. deLarios ,  Katrina Mikhaylichenko ,  Michael Ravkin ,  Mikhail Korolik ,  Fred C. Redeker

IPC分类号： C11D7/50

CPC分类号： H01L21/02052 ,  B08B7/02 ,  C11D9/00 ,  C11D9/02 ,  C11D9/267 ,  C11D11/0047 ,  C11D17/0013 ,  C11D17/0017 ,  C23G1/18 ,  G03F7/42 ,  H01L21/02057 ,  H01L21/02096

摘要： A method is provided for removing contamination from a substrate. The method includes applying a cleaning solution having a dispersed phase, a continuous phase and particles dispersed within the continuous phase to a surface of the substrate. The method includes forcing one of the particles dispersed within the continuous phase proximate to one of the surface contaminants. The forcing is sufficient to overcome any repulsive forces between the particles and the surface contaminants so that the one of the particles and the one of the surface contaminants are engaged. The method also includes removing the engaged particle and surface contaminant from the surface of the substrate. A process to manufacture the cleaning material is also provided.

摘要翻译： 提供了一种用于从衬底去除污染物的方法。 该方法包括将具有分散相，连续相和分散在连续相内的颗粒的清洗溶液施加到基材的表面。 该方法包括迫使分散在连续相内的颗粒中的一种接近一种表面污染物。 强制足以克服颗粒和表面污染物之间的任何排斥力，使得颗粒中的一个和表面污染物之一接合。 该方法还包括从基材的表面除去接合的颗粒和表面污染物。 还提供了制造清洁材料的方法。

公开(公告)号：US20130048021A1

公开(公告)日：2013-02-28

申请号：US13661929

申请日：2012-10-26

申请人： Erik M. Freer ,  John deLarios ,  Katrina Mikhaylichenko ,  Michael Ravkin ,  Mikhail Korolik ,  Fred C. Redeker

发明人： Erik M. Freer ,  John deLarios ,  Katrina Mikhaylichenko ,  Michael Ravkin ,  Mikhail Korolik ,  Fred C. Redeker

IPC分类号： B08B3/08

CPC分类号： H01L21/67092 ,  B08B3/00 ,  B08B7/00 ,  B08B7/02 ,  C11D9/02 ,  C11D11/0047 ,  C11D17/0017 ,  C23G1/18 ,  G03F7/423 ,  H01L21/02052 ,  H01L21/02057 ,  H01L21/02096 ,  H01L21/31133 ,  H01L21/67028 ,  H01L21/6708 ,  H01L21/67086 ,  Y10T137/4891

摘要： A method for cleaning a substrate is provided. The method initiates with applying an activation solution to a surface of the substrate. The activation solution and the surface of the substrate are contacted with a surface of a solid cleaning surface. The activation solution is absorbed into a portion of the solid cleaning element and then the substrate or the solid cleaning surface is moved relative to each other to clean the surface of the substrate. A method for cleaning the surface of the substrate with a solid cleaning element that experiences plastic deformation is also provided. Corresponding cleaning apparatuses are also provided.

摘要翻译： 提供一种清洗基板的方法。 该方法通过将激活溶液施加到基底的表面来启动。 活化溶液和基材的表面与固体清洁表面的表面接触。 活化溶液被吸收到固体清洁元件的一部分中，然后基底或固体清洁表面相对于彼此移动以清洁基底的表面。 还提供了一种用经历塑性变形的固体清洁元件来清洁基板的表面的方法。 还提供了相应的清洁装置。

公开(公告)号：US07975708B2

公开(公告)日：2011-07-12

申请号：US11731532

申请日：2007-03-30

申请人： Michael Ravkin ,  John M. de Larios ,  Fred C. Redeker ,  Mikhail Korolik ,  Erik M. Freer

发明人： Michael Ravkin ,  John M. de Larios ,  Fred C. Redeker ,  Mikhail Korolik ,  Erik M. Freer

IPC分类号： B08B3/00

CPC分类号： H01L21/67051

摘要： A proximity head including a head surface. The head surface including a first flat region and a plurality of first conduits. Each one of the plurality of first conduits being defined by corresponding one of a plurality of first discrete holes. The plurality of first discrete holes residing in the head surface and extending through the first flat region. The head surface also including a second flat region and a plurality of second conduits. The plurality of second conduits being defined by a corresponding plurality of second discrete holes that reside in the head surface and extend through the second flat region. The head surface also including a third flat region disposed between and adjacent to the first flat region and the second flat region and a plurality of third conduits. The plurality of third conduits being defined by a corresponding plurality of third discrete holes that reside in the head surface and extend through the third flat region. The third conduits being formed at a first angle relative to the third flat region. The first angle being between 30 and 60 degrees. A system and method for processing a substrate with a proximity head is also described.

摘要翻译： 包括头表面的接近头。 头表面包括第一平坦区域和多个第一管道。 多个第一导管中的每一个由多个第一离散孔中的对应的一个限定。 多个第一离散孔位于头表面并延伸穿过第一平坦区域。 头表面还包括第二平坦区域和多个第二管道。 多个第二导管由位于头表面中并延伸穿过第二平坦区域的相应多个第二离散孔限定。 头表面还包括设置在第一平坦区域和第二平坦区域之间并与之相邻的第三平坦区域和多个第三导管。 多个第三导管由位于头表面中并延伸穿过第三平坦区域的对应的多个第三离散孔限定。 第三导管相对于第三平坦区域以第一角度形成。 第一个角度在30到60度之间。 还描述了用于处理具有邻近头的衬底的系统和方法。