公开(公告)号：US08148726B2

公开(公告)日：2012-04-03

申请号：US12844887

申请日：2010-07-28

申请人： Takeshi Noda ,  Toshio Miyazawa ,  Takuo Kaitoh ,  Daisuke Sonoda

发明人： Takeshi Noda ,  Toshio Miyazawa ,  Takuo Kaitoh ,  Daisuke Sonoda

IPC分类号： H01L33/013

CPC分类号： H01L29/78621 ,  G02F1/1368 ,  H01L29/66765 ,  H01L29/78627

摘要： A display device which has thin film transistors, wherein a semiconductor layer includes a first layer, second layers and third layers, the first layer has a channel region, the second layers are an impurity layer, the third layers are a low-concentration impurity layer, the second layers have connection portions connected with an electrodes, the third layers are formed to annularly surround the second layers, a channel-region-side edge portion out of edge portions of the third layer is in contact with the first layer, the edge portions of the third layer but the channel-region-side edge portion are in contact with an interlayer insulation film, the second layers have a first region where the second layer overlaps with a gate electrode and a second region where the second layer does not overlap with the gate electrode, and the connection portion is in the second region.

摘要翻译： 一种具有薄膜晶体管的显示装置，其中半导体层包括第一层，第二层和第三层，第一层具有沟道区，第二层是杂质层，第三层是低浓度杂质层 所述第二层具有与电极连接的连接部，所述第三层形成为环绕所述第二层，所述第三层的边缘部分之外的沟道区域侧边缘部与所述第一层接触，所述边缘 第三层的第二层与沟道区侧边缘部分接触层间绝缘膜，第二层具有第一区域，其中第二层与栅电极重叠，第二区与第二层不重叠 与栅电极连接，连接部位在第二区域。

公开(公告)号：US08124975B2

公开(公告)日：2012-02-28

申请号：US12608147

申请日：2009-10-29

申请人： Takeshi Noda ,  Toshio Miyazawa ,  Takuo Kaitoh ,  Hiroyuki Abe

发明人： Takeshi Noda ,  Toshio Miyazawa ,  Takuo Kaitoh ,  Hiroyuki Abe

IPC分类号： H01L33/00

CPC分类号： H01L29/78645 ,  H01L27/1214 ,  H01L29/42384 ,  H01L29/78621 ,  H01L29/78627

摘要： Provided is a display device capable of suppressing generation of optical leakage current as well as increase in capacitance in a case where a plurality of thin film transistors (TFTs) including a gate electrode film on a light source side are formed in series. Relative areas of opposing regions between a semiconductor film and the gate electrode film with respect to channel regions are different in at least a part of the plurality of TFTs, to thereby provide a flat panel display having a structure for suppressing increase in capacitance while suppressing generation of optical leakage current.

摘要翻译： 提供了在包括在光源侧的栅电极膜串联形成的多个薄膜晶体管（TFT）的情况下能够抑制漏电流的产生以及电容增加的显示装置。 在多个TFT的至少一部分中，半导体膜与栅电极膜之间的相对区域相对于沟道区的相对区域是不同的，从而提供具有抑制电容增加的结构的平板显示器，同时抑制发生 的漏光电流。

公开(公告)号：US20110291088A1

公开(公告)日：2011-12-01

申请号：US13205872

申请日：2011-08-09

申请人： Satoshi Seo ,  Takeshi Noda ,  Shunpei Yamazaki

发明人： Satoshi Seo ,  Takeshi Noda ,  Shunpei Yamazaki

IPC分类号： H01L33/60 ,  H01L51/54

CPC分类号： H01L51/5278 ,  H01L27/3211 ,  H01L27/3244 ,  H01L51/5044 ,  H01L51/5218 ,  H01L51/5265

摘要： It is an object of the invention to provide a light emitting device which can display a superior image in which luminescent color from each light emitting layer is beautifully displayed and power consumption is lowered in a light emitting element in which light emitting layers are stacked. One feature of the invention is that, in a light emitting element which comprises light emitting layers stacked between electrodes, each distance between each light emitting layer and an electrode is approximately oddly multiplied ¼ wavelength by controlling a thickness of a layer provided therebetween to enhance luminous output efficiency. Another feature of the invention is that a drive voltage is lowered using a high conductive material for the layer compared with a conventional element.

摘要翻译： 发明内容本发明的目的在于提供一种发光装置，其能够显示优异的图像，其中来自每个发光层的发光颜色被精美地显示，并且功率消耗在层叠有发光层的发光元件中降低。 本发明的一个特征在于，在包含层叠在电极之间的发光层的发光元件中，通过控制其间设置的层的厚度来增强发光，每个发光层和电极之间的距离几乎是奇数倍的1/4波长 输出效率。 本发明的另一个特征是与常规元件相比，使用用于该层的高导电材料驱动电压降低。

公开(公告)号：US20110193070A1

公开(公告)日：2011-08-11

申请号：US13035029

申请日：2011-02-25

申请人： Shunpei Yamazaki ,  Takeshi Noda ,  Yoshinari Higaki

发明人： Shunpei Yamazaki ,  Takeshi Noda ,  Yoshinari Higaki

IPC分类号： H01L51/52 ,  H01L51/56

CPC分类号： H01L51/56 ,  H01L27/3244 ,  H01L27/3246 ,  H01L51/5203 ,  H01L51/5206 ,  H01L51/5209 ,  H01L51/5218 ,  H01L51/5271 ,  H01L51/5284 ,  H01L2251/56

摘要： A light emission device manufactured by a method of forming a curved surface having a radius of curvature to the upper end of an insulator 19, exposing a portion of the first electrode 18c to form an inclined surface in accordance with the curved surface, and applying etching so as to expose the first electrode 18b in a region to form a light emission region, in which emitted light from the layer containing the organic compound 20 is reflected on the inclined surface of the first electrode 18c to increase the total take-out amount of light in the direction of an arrow shown in FIG. 1A and, further, forming a light absorbing multi-layered film 24 comprising light absorbing multi-layered film on the first electrode 18c other than the region to form the light emission region, thereby obtaining a light emission device of a structure increasing the amount of light emission taken out in one direction in a light emission element, while not all the light formed in the layer containing the organic compound are taken out from the cathode as a transparent electrode toward TFT but the light was emitted also, for example, in the lateral direction (direction parallel with the plane of the substrate).

摘要翻译： 一种发光装置，其是通过在绝缘体19的上端形成具有曲率半径的曲面的方法制造的，使第一电极18c的一部分根据弯曲表面形成倾斜面，并施加蚀刻 以便将第一电极18b暴露在区域中以形成发光区域，其中来自含有有机化合物20的层的发射光在第一电极18c的倾斜表面上被反射，以增加第一电极18b的总取出量 在图1所示的箭头方向上的光。 此外，在除了该区域之外的第一电极18c上形成包含吸光多层膜的吸光多层膜24以形成发光区域，从而获得结构增加的结构的发光装置 在发光元件中沿一个方向取出的发光，而不是所有在含有有机化合物的层中形成的光都从作为TFT的透明电极的阴极中取出，但是也例如在 横向（与基板的平面平行的方向）。

公开(公告)号：US07948171B2

公开(公告)日：2011-05-24

申请号：US11352185

申请日：2006-02-10

申请人： Masayuki Sakakura ,  Takeshi Noda ,  Hideaki Kuwabara ,  Shunpei Yamazaki

发明人： Masayuki Sakakura ,  Takeshi Noda ,  Hideaki Kuwabara ,  Shunpei Yamazaki

IPC分类号： H01L51/50 ,  H01L51/52

CPC分类号： H01L27/3244 ,  H01L27/322 ,  H01L27/3248 ,  H01L51/0011 ,  H01L51/5052 ,  H01L51/5206 ,  H01L51/5209 ,  H01L51/5218 ,  H01L51/56 ,  H01L2251/5315

摘要： A manufacturing method of an active matrix light emitting device in which the active matrix light emitting device can be manufactured in a shorter time with high yield at low cost compared with conventional ones will be provided. It is a feature of the present invention that a layered structure is employed for a metal electrode which is formed in contact with or is electrically connected to a semiconductor layer of each TFT arranged in a pixel area of an active matrix light emitting device. Further, the metal electrode is partially etched and used as a first electrode of a light emitting element. A buffer layer, a layer containing an organic compound, and a second electrode layer are stacked over the first electrode.

摘要翻译： 将提供一种有源矩阵发光器件的制造方法，其中有源矩阵发光器件可以在较短的时间内以较低的成本与常规的低成本制造。 本发明的特征在于，与配置在有源矩阵型发光元件的像素区域中的每个TFT的半导体层接触或电连接的金属电极采用分层结构。 此外，金属电极被部分蚀刻并用作发光元件的第一电极。 缓冲层，含有有机化合物的层和第二电极层层叠在第一电极上。

公开(公告)号：US20110019933A1

公开(公告)日：2011-01-27

申请号：US12834230

申请日：2010-07-12

申请人： Takeshi Noda

发明人： Takeshi Noda

IPC分类号： G06K9/40

CPC分类号： G06K9/40 ,  G06T5/002 ,  G06T5/20 ,  G06T2207/10116 ,  G06T2207/20028 ,  G06T2207/20192

摘要： An information processing apparatus performs first filter processing to combine pixels of an image along a predetermined direction. A line noise image is extracted by executing second filter processing for the processed image along a direction different from the predetermined direction. The extracted line noise image is subtracted from the image to acquire a line noise reduced image.

摘要翻译： 信息处理装置执行第一滤波处理以组合沿预定方向的图像的像素。 通过对于经处理的图像沿与预定方向不同的方向执行第二滤波处理来提取线噪声图像。 从图像中减去提取的线噪声图像，以获得线噪声降低图像。

公开(公告)号：US07851989B2

公开(公告)日：2010-12-14

申请号：US11386187

申请日：2006-03-22

申请人： Takeshi Noda

发明人： Takeshi Noda

IPC分类号： H05B33/00

CPC分类号： H01L33/26 ,  H01L51/5048 ,  H01L51/5203 ,  H01L51/5209 ,  H05B33/24

摘要： It is an object of the present invention to provide a light-emitting device in which, even when a material with high reflectivity such as aluminum is used for an electrode, a layer containing oxygen can be formed over the electrode without increasing contact resistance and a manufacturing method thereof. According to the present invention, a feature thereof is a light-emitting element having an electrode composed of a stacked structure where a conductive film having high reflectivity such as aluminum, silver, and an alloy containing aluminum or an alloy containing silver, and a conductive film composed of a refractory metal material is provided over the conductive film, or a light-emitting device having the light-emitting element.

摘要翻译： 本发明的目的是提供一种发光装置，其中即使当具有诸如铝的高反射率的材料用于电极时，可以在电极上形成包含氧的层，而不增加接触电阻，并且 其制造方法。 根据本发明，其特征在于，具有由具有高反射率的导电膜如铝，银以及包含铝的合金或含有银的合金的叠层结构的电极和导电性的发光元件 在导电膜上设置由难熔金属材料构成的膜，或者具有发光元件的发光装置。

公开(公告)号：US07777230B2

公开(公告)日：2010-08-17

申请号：US12155788

申请日：2008-06-10

申请人： Hidekazu Miyake ,  Takuo Kaitoh ,  Takeshi Noda ,  Toshio Miyazawa

发明人： Hidekazu Miyake ,  Takuo Kaitoh ,  Takeshi Noda ,  Toshio Miyazawa

IPC分类号： H01L27/14

CPC分类号： H01L27/124 ,  G02F1/1368

摘要： The present invention provides a display device having thin film transistors which can reduce an OFF current in spite of the extremely simple constitution. In the display device having thin film transistors on a substrate, each thin film transistor includes a gate electrode which is connected with a gate signal line, a semiconductor layer which is formed astride the gate electrode by way of an insulation film, a drain electrode which is connected with a drain signal line and is formed on the semiconductor layer, and a source electrode which is formed on the semiconductor layer in a state that the source electrode faces the drain electrode in an opposed manner, and a side of the drain electrode which faces the source electrode does not overlap the gate electrode as viewed in a plan view, and a side of the source electrode which faces the drain electrode does not overlap the gate electrode as viewed in a plan view.

摘要翻译： 本发明提供了一种具有薄膜晶体管的显示装置，尽管结构非常简单，但可以减小关断电流。 在基板上具有薄膜晶体管的显示装置中，每个薄膜晶体管包括与栅极信号线连接的栅电极，通过绝缘膜跨越栅电极的半导体层，漏电极 与漏极信号线连接并形成在半导体层上，并且以与源电极相对的方式形成在漏电极的状态的半导体层上形成的源电极和漏电极的一侧 如平面图所示，面源极电极不与栅电极重叠，源极电极的面对漏电极的一侧与平面图中的栅电极不重叠。

公开(公告)号：US20100109014A1

公开(公告)日：2010-05-06

申请号：US12611951

申请日：2009-11-04

申请人： Takahiro KAMO ,  Takeshi Noda

发明人： Takahiro KAMO ,  Takeshi Noda

IPC分类号： H01L33/00 ,  H01L29/786 ,  H01L21/336

CPC分类号： H01L27/1214 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78678 ,  H01L29/78696

摘要： A display device includes: a conductive layer on which gate electrodes are formed; a first insulation layer which is formed on the conductive layer; a semiconductor layer which is formed on the first insulation layer and is provided for forming semiconductor films which contain poly-crystalline silicon above the gate electrodes; and a second insulation layer which is formed on the semiconductor layer. Here, the semiconductor film includes a channel region which overlaps with the gate electrode as viewed in a plan view. In the channel region, a portion of the semiconductor film which is in contact with the second insulation layer exhibits higher impurity concentration than a portion of the semiconductor film which is in contact with the first insulation layer.

摘要翻译： 显示装置包括：形成栅电极的导电层; 形成在导电层上的第一绝缘层; 半导体层，形成在第一绝缘层上，用于形成在栅电极上方含有多晶硅的半导体膜; 以及形成在所述半导体层上的第二绝缘层。 这里，半导体膜包括与平面图中的栅电极重叠的沟道区域。 在沟道区域中，与第二绝缘层接触的半导体膜的一部分比与第一绝缘层接触的半导体膜的部分显示更高的杂质浓度。

公开(公告)号：US20100032674A1

公开(公告)日：2010-02-11

申请号：US12536097

申请日：2009-08-05

申请人： Takeshi Noda ,  Toshio Miyazawa ,  Takuo Kaitoh ,  Takumi Shigaki

发明人： Takeshi Noda ,  Toshio Miyazawa ,  Takuo Kaitoh ,  Takumi Shigaki

IPC分类号： H01L33/00

CPC分类号： G02F1/13624 ,  G02F2202/104

摘要： An object of the present invention is to provide a display device where small thin film transistors with a lower off current can be formed. The present invention provides a display device where thin film transistors are formed on a substrate, and in the above described thin film transistors, a gate electrode is formed on a semiconductor layer with a gate insulating film in between, the above described thin film transistors are formed of at least a first thin film transistor and a second thin film transistor, and the above described semiconductor layer is divided into individual regions for each film transistor, the above described semiconductor layer is provided with a common region shared either by the drain region of the above described first thin film transistor and the source region of the above described second thin film transistor or by the source region of the above described first thin film transistor and the drain region of the above described second thin film transistor, in the first thin film transistor and the second thin film transistor, the semiconductor layer is provided with LDD regions where the impurity concentration is lower than in the above described drain region and the above described source region, between the channel region and the drain region, as well as between the channel region and the source region, and the above described gate electrode is formed so as to overlap with the above described common region in the above described semiconductor layer and face at least the above described channel region and the above described LDD regions of the above described first thin film transistor and the above described channel region and the above described LDD regions of the above described second thin film transistor.

摘要翻译： 本发明的目的是提供一种可以形成具有较低截止电流的小型薄膜晶体管的显示装置。 本发明提供了一种在基板上形成薄膜晶体管的显示装置，在上述薄膜晶体管中，在半导体层之间形成有栅极绝缘膜的栅电极，上述薄膜晶体管 由至少第一薄膜晶体管和第二薄膜晶体管形成，并且上述半导体层被分成用于每个薄膜晶体管的各个区域，上述半导体层设置有共同区域，其共同区域由 上述第一薄膜晶体管和上述第二薄膜晶体管的源极区域或上述第一薄膜晶体管的源极区域和上述第二薄膜晶体管的漏极区域在第一薄膜 晶体管和第二薄膜晶体管，半导体层设置有LDD区，其中杂质c 浓度低于上述漏极区域和上述源极区域，沟道区域和漏极区域之间以及沟道区域和源极区域之间，并且上述栅极电极形成为重叠 在上述半导体层中具有上述公共区域并且至少面向上述第一薄膜晶体管的上述沟道区域和上述LDD区域以及上述沟道区域和上述上述LDD区域 描述的第二薄膜晶体管。