公开(公告)号：US08124975B2

公开(公告)日：2012-02-28

申请号：US12608147

申请日：2009-10-29

申请人： Takeshi Noda ,  Toshio Miyazawa ,  Takuo Kaitoh ,  Hiroyuki Abe

发明人： Takeshi Noda ,  Toshio Miyazawa ,  Takuo Kaitoh ,  Hiroyuki Abe

IPC分类号： H01L33/00

CPC分类号： H01L29/78645 ,  H01L27/1214 ,  H01L29/42384 ,  H01L29/78621 ,  H01L29/78627

摘要： Provided is a display device capable of suppressing generation of optical leakage current as well as increase in capacitance in a case where a plurality of thin film transistors (TFTs) including a gate electrode film on a light source side are formed in series. Relative areas of opposing regions between a semiconductor film and the gate electrode film with respect to channel regions are different in at least a part of the plurality of TFTs, to thereby provide a flat panel display having a structure for suppressing increase in capacitance while suppressing generation of optical leakage current.

摘要翻译： 提供了在包括在光源侧的栅电极膜串联形成的多个薄膜晶体管（TFT）的情况下能够抑制漏电流的产生以及电容增加的显示装置。 在多个TFT的至少一部分中，半导体膜与栅电极膜之间的相对区域相对于沟道区的相对区域是不同的，从而提供具有抑制电容增加的结构的平板显示器，同时抑制发生 的漏光电流。

公开(公告)号：US08124974B2

公开(公告)日：2012-02-28

申请号：US12536097

申请日：2009-08-05

申请人： Takeshi Noda ,  Toshio Miyazawa ,  Takuo Kaitoh ,  Takumi Shigaki

发明人： Takeshi Noda ,  Toshio Miyazawa ,  Takuo Kaitoh ,  Takumi Shigaki

IPC分类号： H01L33/00

CPC分类号： G02F1/13624 ,  G02F2202/104

摘要： A display device is provided in which at least first and second thin film transistors are formed on a substrate, including a gate electrode formed on a semiconductor layer with a gate insulating film in between. The semiconductor layer is divided into individual regions for each film transistor, and is provided with a common region and LDD regions between a channel region and a drain region, as well as between the channel region and a source region. The gate electrode is formed as an integrated gate electrode for the first and second thin film transistors that faces the common region, the channel region and the LDD regions of the first thin film transistor and the channel region and the LDD regions of the second thin film transistor.

摘要翻译： 提供了一种显示装置，其中至少第一和第二薄膜晶体管形成在基板上，包括形成在其间具有栅极绝缘膜的半导体层上的栅电极。 半导体层被分成用于每个薄膜晶体管的单个区域，并且在沟道区域和漏极区域之间以及在沟道区域和源极区域之间设置有公共区域和LDD区域。 栅电极形成为第一和第二薄膜晶体管的集成栅电极，其面对公共区域，第一薄膜晶体管的沟道区域和LDD区域以及第二薄膜的沟道区域和LDD区域 晶体管。

公开(公告)号：US20100096645A1

公开(公告)日：2010-04-22

申请号：US12579428

申请日：2009-10-15

申请人： Daisuke Sonoda ,  Toshio Miyazawa ,  Takuo Kaitoh ,  Yasukazu Kimura ,  Takeshi Kuriyagawa ,  Takeshi Noda

发明人： Daisuke Sonoda ,  Toshio Miyazawa ,  Takuo Kaitoh ,  Yasukazu Kimura ,  Takeshi Kuriyagawa ,  Takeshi Noda

IPC分类号： H01L33/00

CPC分类号： H01L27/1288 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1248

摘要： A manufacturing method of a display device and a display device which can reduce the number of times that an insulation substrate is put into a CVD device and is taken out from the CVD device are provided. The manufacturing method of a display device includes the steps of forming a conductive layer including first electrode films and second electrode films, a first insulation layer, semiconductor films, a second insulation layer and a protective layer on an insulation substrate; forming first resist films having a predetermined thickness which are arranged in first regions above the semiconductor films, opening portions which are arranged in second regions above the second electrode films and second resist films having a large thickness which are arranged in regions other than the first regions and the second regions on the protective layer; etching portions below the second regions, removing the first resist films by ashing; forming first holes which reach the semiconductor films below the first regions and second holes which reach the second electrode films below the second regions; removing the second resist films, and forming lines which are connected to the semiconductor films and lines which are connected to the second electrode films.

摘要翻译： 提供了可以减少将绝缘基板放入CVD装置并从CVD装置中取出的次数的显示装置和显示装置的制造方法。 显示装置的制造方法包括在绝缘基板上形成包括第一电极膜和第二电极膜的导电层，第一绝缘层，半导体膜，第二绝缘层和保护层的步骤; 形成具有预定厚度的第一抗蚀剂膜，其布置在半导体膜上方的第一区域中，布置在第二电极膜上方的第二区域中的开口部分和布置在除了第一区域之外的区域中的具有大厚度的第二抗蚀剂膜 和保护层上的第二区域; 蚀刻第二区域下方的部分，通过灰化去除第一抗蚀剂膜; 形成在第一区域下方到达半导体膜的第一孔和在第二区域下方到达第二电极膜的第二孔; 去除第二抗蚀剂膜，以及形成连接到半导体膜的线和连接到第二电极膜的线。

公开(公告)号：US20080308811A1

公开(公告)日：2008-12-18

申请号：US12155788

申请日：2008-06-10

申请人： Hidekazu Miyake ,  Takuo Kaitoh ,  Takeshi Noda ,  Toshio Miyazawa

发明人： Hidekazu Miyake ,  Takuo Kaitoh ,  Takeshi Noda ,  Toshio Miyazawa

IPC分类号： H01L33/00

CPC分类号： H01L27/124 ,  G02F1/1368

摘要： The present invention provides a display device having thin film transistors which can reduce an OFF current in spite of the extremely simple constitution. In the display device having thin film transistors on a substrate, each thin film transistor includes a gate electrode which is connected with a gate signal line, a semiconductor layer which is formed astride the gate electrode by way of an insulation film, a drain electrode which is connected with a drain signal line and is formed on the semiconductor layer, and a source electrode which is formed on the semiconductor layer in a state that the source electrode faces the drain electrode in an opposed manner, and a side of the drain electrode which faces the source electrode does not overlap the gate electrode as viewed in a plan view, and a side of the source electrode which faces the drain electrode does not overlap the gate electrode as viewed in a plan view.

摘要翻译： 本发明提供了一种具有薄膜晶体管的显示装置，尽管结构非常简单，但可以减小关断电流。 在基板上具有薄膜晶体管的显示装置中，每个薄膜晶体管包括与栅极信号线连接的栅电极，通过绝缘膜跨越栅电极的半导体层，漏电极 与漏极信号线连接并形成在半导体层上，并且以与源电极相对的方式形成在漏电极的状态的半导体层上形成的源电极和漏电极的一侧 如平面图所示，面源极电极不与栅电极重叠，源极电极的面对漏电极的一侧与平面图中的栅电极不重叠。

公开(公告)号：US08148726B2

公开(公告)日：2012-04-03

申请号：US12844887

申请日：2010-07-28

申请人： Takeshi Noda ,  Toshio Miyazawa ,  Takuo Kaitoh ,  Daisuke Sonoda

发明人： Takeshi Noda ,  Toshio Miyazawa ,  Takuo Kaitoh ,  Daisuke Sonoda

IPC分类号： H01L33/013

CPC分类号： H01L29/78621 ,  G02F1/1368 ,  H01L29/66765 ,  H01L29/78627

摘要： A display device which has thin film transistors, wherein a semiconductor layer includes a first layer, second layers and third layers, the first layer has a channel region, the second layers are an impurity layer, the third layers are a low-concentration impurity layer, the second layers have connection portions connected with an electrodes, the third layers are formed to annularly surround the second layers, a channel-region-side edge portion out of edge portions of the third layer is in contact with the first layer, the edge portions of the third layer but the channel-region-side edge portion are in contact with an interlayer insulation film, the second layers have a first region where the second layer overlaps with a gate electrode and a second region where the second layer does not overlap with the gate electrode, and the connection portion is in the second region.

摘要翻译： 一种具有薄膜晶体管的显示装置，其中半导体层包括第一层，第二层和第三层，第一层具有沟道区，第二层是杂质层，第三层是低浓度杂质层 所述第二层具有与电极连接的连接部，所述第三层形成为环绕所述第二层，所述第三层的边缘部分之外的沟道区域侧边缘部与所述第一层接触，所述边缘 第三层的第二层与沟道区侧边缘部分接触层间绝缘膜，第二层具有第一区域，其中第二层与栅电极重叠，第二区与第二层不重叠 与栅电极连接，连接部位在第二区域。

公开(公告)号：US07777230B2

公开(公告)日：2010-08-17

申请号：US12155788

申请日：2008-06-10

申请人： Hidekazu Miyake ,  Takuo Kaitoh ,  Takeshi Noda ,  Toshio Miyazawa

发明人： Hidekazu Miyake ,  Takuo Kaitoh ,  Takeshi Noda ,  Toshio Miyazawa

IPC分类号： H01L27/14

CPC分类号： H01L27/124 ,  G02F1/1368

摘要： The present invention provides a display device having thin film transistors which can reduce an OFF current in spite of the extremely simple constitution. In the display device having thin film transistors on a substrate, each thin film transistor includes a gate electrode which is connected with a gate signal line, a semiconductor layer which is formed astride the gate electrode by way of an insulation film, a drain electrode which is connected with a drain signal line and is formed on the semiconductor layer, and a source electrode which is formed on the semiconductor layer in a state that the source electrode faces the drain electrode in an opposed manner, and a side of the drain electrode which faces the source electrode does not overlap the gate electrode as viewed in a plan view, and a side of the source electrode which faces the drain electrode does not overlap the gate electrode as viewed in a plan view.

摘要翻译： 本发明提供了一种具有薄膜晶体管的显示装置，尽管结构非常简单，但可以减小关断电流。 在基板上具有薄膜晶体管的显示装置中，每个薄膜晶体管包括与栅极信号线连接的栅电极，通过绝缘膜跨越栅电极的半导体层，漏电极 与漏极信号线连接并形成在半导体层上，并且以与源电极相对的方式形成在漏电极的状态的半导体层上形成的源电极和漏电极的一侧 如平面图所示，面源极电极不与栅电极重叠，源极电极的面对漏电极的一侧与平面图中的栅电极不重叠。

公开(公告)号：US20100032674A1

公开(公告)日：2010-02-11

申请号：US12536097

申请日：2009-08-05

申请人： Takeshi Noda ,  Toshio Miyazawa ,  Takuo Kaitoh ,  Takumi Shigaki

发明人： Takeshi Noda ,  Toshio Miyazawa ,  Takuo Kaitoh ,  Takumi Shigaki

IPC分类号： H01L33/00

CPC分类号： G02F1/13624 ,  G02F2202/104

摘要： An object of the present invention is to provide a display device where small thin film transistors with a lower off current can be formed. The present invention provides a display device where thin film transistors are formed on a substrate, and in the above described thin film transistors, a gate electrode is formed on a semiconductor layer with a gate insulating film in between, the above described thin film transistors are formed of at least a first thin film transistor and a second thin film transistor, and the above described semiconductor layer is divided into individual regions for each film transistor, the above described semiconductor layer is provided with a common region shared either by the drain region of the above described first thin film transistor and the source region of the above described second thin film transistor or by the source region of the above described first thin film transistor and the drain region of the above described second thin film transistor, in the first thin film transistor and the second thin film transistor, the semiconductor layer is provided with LDD regions where the impurity concentration is lower than in the above described drain region and the above described source region, between the channel region and the drain region, as well as between the channel region and the source region, and the above described gate electrode is formed so as to overlap with the above described common region in the above described semiconductor layer and face at least the above described channel region and the above described LDD regions of the above described first thin film transistor and the above described channel region and the above described LDD regions of the above described second thin film transistor.

摘要翻译： 本发明的目的是提供一种可以形成具有较低截止电流的小型薄膜晶体管的显示装置。 本发明提供了一种在基板上形成薄膜晶体管的显示装置，在上述薄膜晶体管中，在半导体层之间形成有栅极绝缘膜的栅电极，上述薄膜晶体管 由至少第一薄膜晶体管和第二薄膜晶体管形成，并且上述半导体层被分成用于每个薄膜晶体管的各个区域，上述半导体层设置有共同区域，其共同区域由 上述第一薄膜晶体管和上述第二薄膜晶体管的源极区域或上述第一薄膜晶体管的源极区域和上述第二薄膜晶体管的漏极区域在第一薄膜 晶体管和第二薄膜晶体管，半导体层设置有LDD区，其中杂质c 浓度低于上述漏极区域和上述源极区域，沟道区域和漏极区域之间以及沟道区域和源极区域之间，并且上述栅极电极形成为重叠 在上述半导体层中具有上述公共区域并且至少面向上述第一薄膜晶体管的上述沟道区域和上述LDD区域以及上述沟道区域和上述上述LDD区域 描述的第二薄膜晶体管。

公开(公告)号：US20090218574A1

公开(公告)日：2009-09-03

申请号：US12379095

申请日：2009-02-12

申请人： Takeshi Noda ,  Toshio Miyazawa ,  Takuo Kaitoh ,  Daisuke Sonoda ,  Takeshi Kuriyagawa

发明人： Takeshi Noda ,  Toshio Miyazawa ,  Takuo Kaitoh ,  Daisuke Sonoda ,  Takeshi Kuriyagawa

IPC分类号： H01L33/00

CPC分类号： H01L27/127 ,  H01L27/1214 ,  H01L29/66765 ,  H01L29/78621

摘要： A display device includes a thin film transistor above a substrate, in which the thin film transistor is configured to include a gate electrode, a gate insulating film formed to cover the gate electrode, a semiconductor layer formed to stride over the gate electrode on the gate insulating film, an inter-layer insulating film formed to cover the semiconductor layer, and a pair of electrodes formed to be connected to each of sides of the semiconductor layer interposing the gate electrode therebetween through contact holes formed through the inter-layer insulating film, high concentration impurity layers are formed at each connecting portion of the electrodes of the semiconductor layer, and an annular low-concentration impurity layer is formed to surround at least one of the high concentration impurity layers.

摘要翻译： 显示装置包括在基板上方的薄膜晶体管，其中薄膜晶体管被配置为包括栅极电极，形成为覆盖栅电极的栅极绝缘膜，形成为跨越栅极上的栅极电极的半导体层 绝缘膜，形成为覆盖半导体层的层间绝缘膜，以及一对电极，其形成为通过穿过该层间绝缘膜形成的接触孔而将半导体层的每一侧连接在其间的栅电极， 在半导体层的电极的每个连接部分处形成高浓度杂质层，并且形成环状低浓度杂质层以包围至少一个高浓度杂质层。

公开(公告)号：US07732268B2

公开(公告)日：2010-06-08

申请号：US11882828

申请日：2007-08-06

申请人： Hideaki Shimmoto ,  Mikio Hongo ,  Akio Yazaki ,  Takeshi Noda ,  Takuo Kaitoh

发明人： Hideaki Shimmoto ,  Mikio Hongo ,  Akio Yazaki ,  Takeshi Noda ,  Takuo Kaitoh

IPC分类号： H01L21/00

CPC分类号： H01L21/02532 ,  H01L21/02683 ,  H01L21/02691 ,  H01L27/1285

摘要： A method of manufacturing a display device to improve the quality of a polycrystal silicon upon dehydrogenating and polycrystallizing an amorphous silicon at the outside of a display region of a substrate, by forming a plurality of pixels having TFT devices using an amorphous silicon in the display region of the substrate, and forming a plurality of driving circuits having semiconductor devices using a polycrystal silicon at the outside of the display region, the method including irradiation of a first continuous oscillation laser only to the amorphous silicon in the region for forming the driving circuit and the peripheral region thereof to conduct dehydrogenation and then irradiation of a second continuous oscillation region only to the dehydrogenated region to polycrystallize the amorphous silicon, wherein the region to which the first continuous oscillation laser is irradiated is wider than the region to which the second continuous oscillation laser is irradiated.

摘要翻译： 一种制造显示装置的方法，通过在显示区域中形成具有使用非晶硅的TFT器件的多个像素，从而在衬底的显示区域的外侧使非晶硅脱氢和多晶化时提高多晶硅的质量 并且在显示区域的外部形成具有使用多晶硅的半导体器件的多个驱动电路，该方法包括仅在用于形成驱动电路的区域中的非晶硅上照射第一连续振荡激光，以及 其周边区域进行脱氢，然后仅将第二连续振荡区域照射到脱氢区域以将非晶硅多晶化，其中第一连续振荡激光器照射的区域比第二连续振荡区域 激光被照射。

公开(公告)号：US20100096632A1

公开(公告)日：2010-04-22

申请号：US12578641

申请日：2009-10-14

申请人： Takeshi KURIYAGAWA ,  Takeshi Noda ,  Takuo Kaitoh

发明人： Takeshi KURIYAGAWA ,  Takeshi Noda ,  Takuo Kaitoh

IPC分类号： H01L27/12 ,  H01L21/77

CPC分类号： H01L27/124 ,  H01L27/1248 ,  H01L29/66765

摘要： A second insulation layer which is formed by stacking a plurality of layers made of different materials in a mutually contact manner is formed such that the second insulation layer covers a source region and a drain region and also covers a gate electrode from above. A first contact hole which reaches one of the source region and the drain region and a recessed portion which is arranged above the gate electrode but is not communicated with the gate electrode are simultaneously formed on the second insulation layer by dry etching. A first line layer is formed so as to cover the first contact hole. After forming the first line layer, a bottom surface of the recessed portion is etched by dry etching thus forming a second contact hole which reaches the gate electrode in the first and second insulation layers. A second line layer is formed on the second contact hole.

摘要翻译： 形成通过以相互接触的方式堆叠由不同材料制成的多个层而形成的第二绝缘层，使得第二绝缘层覆盖源极区域和漏极区域并且还从上方覆盖栅极电极。 通过干法蚀刻在第二绝缘层上同时形成到达源极区域和漏极区域中的一个的第一接触孔和设置在栅电极上方但不与栅电极连通的凹部。 第一线层形成为覆盖第一接触孔。 在形成第一线层之后，通过干蚀刻蚀刻凹陷部分的底表面，从而形成到达第一和第二绝缘层中的栅电极的第二接触孔。 在第二接触孔上形成第二线层。