Abstract:
Apparatus and method for producing a linear voltage versus thickness output for a radio frequency glass thickness gauge. One type of thickness measuring device for glass containers uses the attenuation of a radio frequency signal as a measure of thickness. The thickness signal is a voltage which varies nonlinearly as a function of thickness. This invention is a circuit for linearizing the nonlinear thickness signal. The input resistance to an operational amplifier is varied as a function of the thickness signal voltage. This creates a variable gain for the operational amplifier and consequently results in the generation of a linear thickness versus voltage relationship. Zener diodes are used as nonlinear variable resistors in two different thickness ranges to give a nonlinear, variable, input resistance to the operational amplifier.
Abstract:
In a system of measuring the distribution of the reduction rate of a metal strip rolled by a rolling mill, a pair of thickness gauges spaced apart with a predetermined spacing and which are reciprocated across the metal strip are provided on the entry and exit sides of the rolling mill and the gauges are controlled such that the same portion of the metal strip is measured on the entry and exit sides of the rolling mill by the pair of thickness gauges.
Abstract:
A method for measuring average thickness of a metal or alloy coating on a metal or alloy substrate using an X-ray fluorescence (XRF) spectrometer is used when the coating has an uneven surface at different distances from a measurement window of the XRF spectrometer. The method includes measuring elemental composition of the coating or substrate using the XRF spectrometer and obtaining the average thickness of the coating using a calibration relationship between coating thickness and elemental composition of the coating or substrate. The metal or alloy coating may be a metal or alloy coating of a plurality of outer armor wires wrapped around a cable. The method may be used to analyze coating thickness changes over time or along the length of the cable, or to analyze a corrosive environment in order to choose optimal material for a metal or alloy coating.
Abstract:
A system includes a top scanner head configured over a coated substrate. An x-ray sensor and a second x-ray sensor scan the coated substrate. At least one of the x-ray sensor and second x-ray sensor is tuned to an energy level below an absorption peak and at least one of the x-ray sensor and second x-ray sensor is tuned to an energy level above the absorption peak. The x-ray sensor and second x-ray sensor scan a same sheet spot on the coated substrate. A bottom scanner head is configured underneath the coated substrate to provide a location for a detection of x-rays for the x-ray sensor and the second x-ray sensor.
Abstract:
A method for measuring a tubular strand exiting from an extrusion device comprises directing electromagnetic radiation from an inside of the tubular strand to an inner side of a tubular strand. The electromagnet radiation is radiated from at least one radiation source within a frequency range from 1 GHz to 6000 GHz. The electromagnetic radiation is reflected off of the tubular strand and received by at least one radiation receiver. A value for at least one of a diameter, a wall thickness, and a deviation in shape of the tubular strand is determined from the electromagnetic radiation received by at least one radiation receiver.
Abstract:
A method of calculating a thickness of a graphene layer and a method of measuring a content of silicon carbide, by using X-ray photoelectron spectroscopy (XPS), are provided. The method of calculating the thickness of the graphene layer, which is directly grown on a silicon substrate, includes measuring the thickness of the graphene layer directly grown on the silicon substrate, by using a ratio between a signal intensity of a photoelectron beam emitted from the graphene layer and a signal intensity of a photoelectron beam emitted from the silicon substrate.
Abstract:
A detection method includes obtaining, during operation of a surface density device, a first current pose of a radiation source of the surface density device and a second current pose of a ionization chamber of the surface density device; ascertaining a first pose deviation of the radiation source based on the first current pose; ascertaining a second pose deviation of the ionization chamber based on the second current pose; and determining whether the radiation source has undergone a pose change with respect to the ionization chamber based on the first pose deviation and the second pose deviation.