Abstract:
An apparatus and method for mass spectrometric determination of contaminant components of a thin oxide surface layer of a semiconductor wafer use a movable mechanical stage to scan and raster a large area of the wafer in a continuous scanning motion. The mass of analyte is greatly increased, resulting in improved sensitivity to trace components in the surface layer by a factor of 10-100 or more. A light beam interferometer is used to determine non-planarity from e.g. warping of the wafer and provide a correction by maintaining a constant separation between the wafer and the extraction plate or adjusting the electrical bias of the wafer relative to the extraction bias.
Abstract:
An energy filtering system of an EFTEM is automatically adjusted using a computer. The computer inserts an energy-selecting slit into the beam path and begins monitoring the position of the electron beam through a combination of the current sensors integral to the slit and the readout of an electron camera. The beam is centered within the slit by adjusting an energy dispersing element while monitoring beam sensors. After initial alignment, the slit is retracted and a reference aperture is inserted at the entrance to the energy filter. The electron camera captures an image of the reference aperture and the computer analyzes the deviations of the aperture image from its known physical dimensions in order to evaluate the electron optical distortions and aberrations of the filter. The computer uses the determined optical parameters to adjust the distortion and aberration correcting optical elements of the filter, whose effects are known due to previous calibration. After correcting the imaging aberrations, the reference aperture is withdrawn, the slit reinserted, and an isochromatic surface of the filter at the plane of the slit is measured by scanning the beam across a slit edge while integrating the transmitted beam intensity on the electron camera. The isochromatic surface thus collected by the electron camera is analyzed by the computer to extract additional aberration coefficients of the filter system. These measured aberration coefficients are used to make calibrated corrections to the filter optics.
Abstract:
The composition change and strained structure in a heterointerface or thin film of a multilayer thin film specimen are observed. When the composition change and strained structure are observed, comparison between a dark-field image and a bright-field image and comparison between two dark-field images are required. The position of an objective aperture disposed between the specimen and a detector is moved rapidly so that diffracted wave or transmitted wave corresponding to the dark-field image or bright-field image of a desired plane index is transmitted. As a result, the dark-field image or bright-field image of a desired plane index can be observed correspondingly to the position of the objective aperture.
Abstract:
A commercially available Auger apparatus is developed in such a manner thatt is suitable for carrying out a high-resolution x-ray photoelectron spectroscopy. As a result, the stress to the material is low while the resolution capacity is high. The primary electron beam of an Auger probe impinges on the rear surface of the membrane and induces an x-ray radiation. This x-ray radiations triggers photoelectrons from the membrane surface which are used for the analysis of the uppermost atom layers of the surface. By means of a sample holder, which is designed as a Faraday cage, the electrons are kept back which are emitted from the rear surface of the membrane. The method is suitable for examining very fine structures in the .mu.- and sub-.mu.-range.
Abstract:
An analytical electron microscope automatically identifies objects in a sample on the basis of shape of the object, change of thickness of the object and/or change of element (such as change of element type or concentration). Therefore, the operator of the analytical electron microscope can specify a desired object, and an example or examples of that object in a sample can be identified automatically. The characteristics need to identify the object are determined by detecting the effect of the sample on the electron beam of the analytical electron microscope, using, for example, an energy dispersive type X-ray analyzer and an electron energy loss spectrometer. Once an example of the object has been identified, it may be analyzed further. The analytical electron microscope may also analyze a sample to identify and classify the objects present.
Abstract:
An analytical electron microscope directs an electron beam onto a specimen. The beam is switched back and forth between two states in one of which the beam is finely focused to a size on the order of nanometers. In the other the beam is defocused to a size on the order of microns. A magnified image of a relatively broad region on the specimen irradiated with the defocused beam and a bright spot image are alternately displayed on a fluorescent screen. The bright spot image is obtained from a region on the specimen irradiated with the focused beam. The two images are displayed alternately at intervals shorter than the persistence time of the fluorescent screen to permit one to observe both images simultaneously. The operator moves the position at which the beam irradiates the specimen to bring the bright spot image into a desired region to be analyzed while observing the two images. Thus, the focused beam irradiates the specimen at the desired region. The resulting X-rays are detected, or a diffraction image produced in response to the irradiation of the focused beam is photographed.
Abstract:
A charged particle energy analyzer, such as a microscope or spectrometer, includes a magnetic immersion lens 10 to focus charged particles emitted from an irradiated specimen 5 located within the magnetic field of the lens. A collecting aperture 18 defines the area of the irradiated specimen from which charged particles can be brought to a focus in the image plane of the lens but an aperture 21 in this plane selects and defines a much smaller area of the specimen from which the received particles are passed to a suitable energy analyzing means 25. The energy analyzing means 25 then performs energy analysis of the small selected area of the specimen by imaging the small area with emitted particles of a predetermined energy, or energy scanning the particles emitted from this area, so giving a chemical analysis of the small selected area of the specimen surface.
Abstract:
A secondary ion mass spectrometry system and method is described which operates several orders of magnitude more quickly than previous systems, and captures information that might previously have been missed. A parallel detection approach is used which simultaneously monitors all secondary ion masses of interest, as opposed to prior serial approaches which sense only one ion mass at a time. The secondary ions are spatially separated according to mass and sensed by a detector array. An ion-electron converter and amplifier, implemented as a microchannel plate assembly, is preferably interfaced between the mass separator and detector. The detector preferably uses an array of wires to collect charge emitted by the microchannel plate. The wires are coupled to output lines by an encoding scheme which allows many fewer output lines to be employed than there are wires.
Abstract:
The invention provides a process and device for the ionic analysis of an insulating sample brought to a given negative potential, of the type in which a target on the surface of the sample to be analyzed is bombarded by means of a primary electron beam and negative ions emitted by the bombarded target are used for producing an ion image of the sample. An electron beam whose normal speed component cancels out just at level of the surface of the target is directed perpendicularly to the target.The device comprises for this purpose a filament, brought substantially to the same negative potential as the sample, which emits the electron beam. The electron beam, after emission, is deflected by a magnetic prism so as to be brought into coincidence with the optical axis of the negative ion beam emitted by the target.
Abstract:
A combined objective and emission lens for a microbeam probe is described which is suitable for primary and secondary particles of the same charge sign, by which lens a bundle of primary rays of comparatively high energy can be focused on a very small spot of a plane sample surface and the secondary particles emitted by this spot can be collected into a collimated bundle of secondary rays which leaves the combined lens in a direction substantially opposite to the bundle of primary rays. In the present combined lens, the field strength between the sample surface and the lens electrode most closely adjacent to it is very high, in contrast to the known combined objective and emission lenses, so that a small emissivity of the secondary beam with a small diameter at the same time of the primary beam spot and an effective collection and collimation of the secondary particles are ensured. Certain embodiments can be changed over optionally to operation with primary and secondary particles of the same or opposite polarity.