摘要:
A method of creating a semiconductor device is disclosed. An end of a carbon nanotube is unzipped to provide a substantially flat surface. A contact of the semiconductor device is formed. The substantially flat surface of the carbon nanotube is coupled to the contact to create the semiconductor device. An energy gap in the unzipped end of the carbon nanotube may be less than an energy gap in a region of the carbon nanotube outside of the unzipped end region.
摘要:
Disclosed herein are methods of preparing and using doped MWNT electrodes, sensors and field-effect transistors. Devices incorporating doped MWNT electrodes, sensors and field-effect transistors are also disclosed.
摘要:
The separation of single-walled carbon nanotubes (SWNTs), by electronic type using centrifugation of compositions of SWNTs and surface active block copolymers in density gradient media.
摘要:
A photoelectric cell includes at least one photoelectric conversion module. The at least one photoelectric conversion module includes a first photoelectric conversion element and a second photoelectric conversion element. The first photoelectric conversion element includes a first absorbing part and a first non-absorbing part. An angle between the first absorbing part and the first non-absorbing part is less than 90 degrees. The second photoelectric conversion element includes a second non-absorbing part and a second absorbing part electrically connected with the second absorbing part. An angle between the second absorbing part and the second non-absorbing part is less than 90 degrees. The first absorbing part is electrically connected with the second absorbing part.
摘要:
A method of forming a plurality of nanotubes is disclosed. Particularly, a substrate may be provided and a plurality of recesses may be formed therein. Further, a plurality of nanotubes may be formed generally within each of the plurality of recesses and the plurality of nanotubes may be substantially surrounded with a supporting material. Additionally, at least some of the plurality of nanotubes may be selectively shortened and at least a portion of the at least some of the plurality of nanotubes may be functionalized. Methods for forming semiconductor structures intermediate structures, and semiconductor devices are disclosed. An intermediate structure, intermediate semiconductor structure, and a system including nanotube structures are also disclosed.
摘要:
Disclosed is a system or method for efficiently manufacturing construction materials using carbon nanomaterials. In one or more embodiments, the method comprises creating a blend of carbon nanomaterials, wherein the blend of the carbon nanomaterials includes at least one of a carbon nanofiber, a carbon nanotube, a graphite nanoparticle and an amorphous carbon. The method also includes dispersing the carbon nanomaterials and adding a plasticizer and a sand to the dispersed mixture within 3 minutes. The method also includes adding at least one of water and a cement binding agent to the dispersed mixture after the plasticizer and the sand have been added.
摘要:
A technique is provided for a structure. A substrate has a nanopillar vertically positioned on the substrate. A bottom layer is formed beneath the substrate. A top layer is formed on top of the substrate and on top of the nanopillar, and a cover layer covers the top layer and the nanopillar. A window is formed through the bottom layer and formed through the substrate, and the window ends at the top layer. A nanopore is formed through the top layer by removing the cover layer and the nanopillar.
摘要:
Compositions comprising a polymer-containing matrix and a filler comprising a cage compound selected from borane cage compounds, carborane cage compounds, metal complexes thereof, residues thereof, mixtures thereof, and/or agglomerations thereof, where the cage compound is not covalently bound to the matrix polymer. Methods of making and applications for using such compositions are also disclosed.
摘要:
A semiconductor device includes a substrate having at least one electrically insulating portion. A first graphene electrode is formed on a surface of the substrate such that the electrically insulating portion is interposed between a bulk portion of the substrate and the first graphene electrode. A second graphene electrode formed on the surface of the substrate. The electrically insulating portion of the substrate is interposed between the bulk portion of the substrate and the second graphene electrode. The second graphene electrode is disposed opposite the first graphene electrode to define an exposed substrate area therebetween.