公开(公告)号：US20020070643A1

公开(公告)日：2002-06-13

申请号：US09734573

申请日：2000-12-13

Inventor： Chao-Chin Yeh

IPC: H01J001/02

CPC classification number: F21V3/04 ,  F21K9/232 ,  F21V3/12 ,  F21Y2107/00 ,  F21Y2115/10 ,  H01J61/56

Abstract: A lamp is constructed to include a base adapted for connecting to an electric socket to obtain electricity, a shell fastened to the base and defining with the base an air-tight space, the shell having an inside wall coated with a layer of phosphorescent coating, an electronic ballast installed in the base and adapted to convert AC power supply into DC power supply, and at least one ultraviolet light emitting diode suspended in the air-tight space and connected to the electronic ballast and adapted to produce ultraviolet light to strike the phosphorescent coating in producing visible light upon connection of the base upon connection of the electronic ballast to power supply.

Abstract translation: 灯被构造成包括适于连接到电插座以获得电的基座，固定到基座上的壳体，并用基座限定气密空间，壳体具有涂覆有磷光涂层的内壁， 安装在基座中的电子镇流器，用于将AC电源转换成直流电源，以及悬挂在气密空间中并连接到电子镇流器的至少一个紫外线发光二极管，并且适于产生紫外光以发射磷光 在将电子镇流器连接到电源时，在连接基座时产生可见光的涂层。

公开(公告)号：US20020067113A1

公开(公告)日：2002-06-06

申请号：US10054601

申请日：2002-01-22

Applicant: Micron Technology, Inc.

Inventor： Leonard Forbes ,  Kie Y. Ahn

IPC: H01J001/02

CPC classification number: H01J9/025 ,  H01J3/022

Abstract: A method and structure are provided for simultaneously fabricating polysilicon cones for a field emitter and a porous insulating oxide layer for supporting a gate material. The porous insulating oxide is fabricated by first making the polysilicon porous in the field regions by an anodic etch and then oxidation. This is a fully self-aligned process and only one masking is used. Shaping of the gate material in close proximity to the top of the cone is achieved by a lift-off technique and requires no special deposition techniques like depositions at a grazing incidence to improve the emitter.

Abstract translation: 提供了一种用于同时制造用于场发射器的多晶硅锥体和用于支撑栅极材料的多孔绝缘氧化物层的方法和结构。 多孔绝缘氧化物通过首先通过阳极蚀刻然后氧化在场区域中使多晶硅多孔化来制造。 这是一个完全自对齐的过程，只使用一个掩码。 通过剥离技术实现了靠近锥体的栅极材料的成形，并且不需要特殊的沉积技术，例如在掠入射处的沉积以改善发射体。

公开(公告)号：US20020057045A1

公开(公告)日：2002-05-16

申请号：US09941595

申请日：2001-08-30

Inventor： Takeo Tsukamoto

IPC: H01J001/02

CPC classification number: B82Y10/00 ,  H01J1/304 ,  H01J29/86 ,  H01J31/127 ,  H01J2201/30469 ,  H01J2329/8615

Abstract: To provide an electron-emitting device, an electron source, an image-forming apparatus, and a method for manufacturing the electron-emitting device whereby it is possible to reduce a device capacity and a driving voltage, to improve the efficiency of emitting electrons, and to obtain high-resolution beam. The extracting electrode and the cathode electrode are provided on an insulating substrate, a layer having growth selectivity of fibrous carbon is formed on the cathode electrode, and the fibrous carbon is grown via catalyst particles formed on the layer.

Abstract translation: 为了提供电子发射器件，电子源，图像形成装置和用于制造电子发射器件的方法，由此可以减小器件容量和驱动电压，从而提高发射电子的效率， 并获得高分辨率光束。 提取电极和阴极电极设置在绝缘基板上，在阴极上形成具有纤维状碳生长选择性的层，并且通过形成在层上的催化剂颗粒生长纤维状碳。

公开(公告)号：US20020053863A1

公开(公告)日：2002-05-09

申请号：US09983095

申请日：2001-10-23

Inventor： Hironao Yamaguchi

IPC: H01J001/02 ,  H01J061/52

CPC classification number: F21V29/004 ,  F21S41/17 ,  F21S41/192 ,  F21S41/196 ,  F21S45/33 ,  F21S45/40 ,  F21S45/47 ,  F21S45/49 ,  F21V23/026 ,  F21V29/83 ,  F21V29/89 ,  G03F7/70016

Abstract: A headlight device includes a discharge lamp, a circuit unit and a heat radiating member. The circuit unit is directly connected to the discharge lamp to apply a high voltage to the discharge lamp. The heat radiating member radiates heat generated from the discharge lamp and the circuit unit. The heat radiating member is placed between the discharge lamp and the circuit unit and extends radially in a generally vertically downward direction.

Abstract translation: 前照灯装置包括放电灯，电路单元和散热构件。 电路单元直接连接到放电灯以对放电灯施加高电压。 散热构件辐射从放电灯和电路单元产生的热量。 散热构件放置在放电灯和电路单元之间，并且在大致垂直向下的方向上径向延伸。

公开(公告)号：US20020017842A1

公开(公告)日：2002-02-14

申请号：US09915537

申请日：2001-07-27

Inventor： Mituo Narita

IPC: H01J001/02

CPC classification number: F21V29/67 ,  F21V29/02 ,  H01J61/025 ,  H01J61/20 ,  H01J61/52 ,  H01J61/822 ,  H01J61/86

Abstract: A lamp unit with a light control function for the light emitted from this lamp unit, for which a high pressure mercury lamp is used which is filled with at least 0.15 mg/mm3 mercury and which has a hermetically enclosing arrangement, an essentially hermetically enclosing arrangement or an arrangement in which there is a flow path for actively flowing cooling air within. The lamp unit for a projector has a high pressure mercury lamp of the short arc type with a wall load of at least 1 W/mm2 which is filled with at least 0.15 mg/mm3 mercury, a concave reflector which surrounds this mercury lamp, a front cover which covers the front opening of this concave reflector, a cooling arrangement which can be controlled with respect to its cooling intensity for cooling of the concave reflector and/or the mercury lamp and a control device by which the power of the mercury lamp can be changed, the cooling and the control device being made such that, by controlling the two, a value in the range of 1

Abstract translation: 一种具有对从该灯单元发射的光的光控制功能的灯单元，其中使用高压汞灯，其被填充至少0.15mg / mm 3的汞并且具有气密封闭的布置，基本上气密的布置 或其中存在用于主动流过冷却空气的流动路径的布置。 用于投影仪的灯单元具有短弧型的高压汞灯，其壁填充量至少为1W / mm 2，其填充有至少0.15mg / mm 3的汞，围绕该汞灯的凹面反射器， 覆盖该凹面反射器的前开口的前盖，能够相对于冷却冷却反射器和/或水银灯的冷却强度而被控制的冷却装置，以及控制装置，通过该控制装置，水银灯的功率可以 冷却和控制装置被制成使得通过控制两者，可以设定在1 <（WxG / V）的范围内的值，其中V（cm3）是凹面反射器的内部体积 W（W）是水银灯的额定功率，G（W / mm2）是壁负荷。 此外，给出了这种灯单元的光控制处理。

公开(公告)号：US20040227447A1

公开(公告)日：2004-11-18

申请号：US10765623

申请日：2004-01-27

Applicant: Nano-Proprietary, Inc.

Inventor： Zvi Yaniv ,  Richard Fink

IPC: H01J001/02 ,  H01J001/62 ,  H01J063/04

CPC classification number: B82Y10/00 ,  H01J1/3042 ,  H01J9/025 ,  H01J2201/30469 ,  Y10S977/939

Abstract: Embossed microstructures within a substrate are used to create narrow and deep holes within that substrate. A carbon nanotube solution or mixture is then deposited over this substrate with the embossed holes. Shaking or vibrating the substrate will then cause the carbon nanotubes to fall into each of the holes in such a way that all of the nanotubes within a hole will be substantially parallel to the long axis of the hole. This structure can then be combined with a gate electrode and an anode to create a field emission display device.

公开(公告)号：US20040222729A1

公开(公告)日：2004-11-11

申请号：US10848754

申请日：2004-05-18

Inventor： Zhizhang Chen ,  Michael J. Regan ,  Brian E. Bolf ,  Thomas Novet ,  Paul J. Benning ,  Mark Alan Johnstone ,  Sriram Ramamoorthi

IPC: H01L029/06 ,  H01L031/0336 ,  H01J001/02

CPC classification number: B82Y10/00 ,  H01J1/312 ,  H01J9/022

Abstract: An emitter has an electron supply layer and a tunneling layer formed on the electron supply layer. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within in which the tunneling layer is formed. A cathode layer is formed on the tunneling layer to provide a surface for energy emissions of electrons and/or photons. Preferably, the emitter is subjected to an annealing process thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.

Abstract translation: 发射体具有形成在电子供给层上的电子供给层和隧道层。 可选地，在电子供给层上形成绝缘体层，并且在其内形成有形成有隧道层的开口。 在隧道层上形成阴极层，以提供电子和/或光子能量发射的表面。 优选地，对发射极进行退火处理，从而增加从电子供给层隧穿到阴极层的电子的供应。

公开(公告)号：US20040145299A1

公开(公告)日：2004-07-29

申请号：US10350661

申请日：2003-01-24

Applicant: Sony Corporation ,  Sony Corporation

Inventor： James Qian Wang ,  Benjamin Edward Russ ,  Jack Barger

IPC: H01J001/62 ,  H01J001/02 ,  H01J063/04

CPC classification number: B82Y10/00 ,  H01J3/021 ,  H01J29/481 ,  H01J2201/30469 ,  H01J2329/00

Abstract: Electron emitting structures and methods of electron emission are provided. In one implementation, an electron emitting structure comprises a substrate, a cathode electrode, an insulating material and a gate electrode. Linear apertures are formed in the gate electrode and in the insulating material in a portion of the gate electrode crossing over the cathode electrode. And an electron emitting material is deposited on a portion of the cathode electrode within each linear aperture. In another implementation, the cathode electrode includes linear cathode sections formed in a portion of the cathode electrode, and the gate electrode has linear gate sections. A respective linear cathode section is located in between two adjacent linear gate sections. And an electron emitting material is deposited on at least a portion of each linear cathode section. In preferred form, the electron emitting structure is implemented in a field emission display (FED).

Abstract translation: 提供电子发射结构和电子发射方法。 在一个实施方案中，电子发射结构包括衬底，阴极电极，绝缘材料和栅电极。 在栅极电极和绝缘材料中，在栅极电极的与阴极电极交叉的部分上形成直线孔。 并且电子发射材料沉积在每个线性孔径内的阴极电极的一部分上。 在另一个实施方案中，阴极包括形成在阴极电极的一部分中的线性阴极部分，并且栅电极具有线性栅极部分。 相应的线性阴极部分位于两个相邻的线性栅极部分之间。 并且电子发射材料沉积在每个线性阴极部分的至少一部分上。 在优选形式中，电子发射结构在场致发射显示器（FED）中实现。

公开(公告)号：US20040104656A1

公开(公告)日：2004-06-03

申请号：US10716600

申请日：2003-11-20

Applicant: GENERAL ELECTRIC COMPANY

Inventor： Colin Wilson

IPC: H01J001/02

CPC classification number: H01J1/3044

Abstract: There is provided a field emitter array on a substrate. The field emitter array includes field emitter devices. At least one of the field emitter devices includes a conducting gate layer having a top surface and at least one side surface, disposed over the substrate. The at least one of the field emitter devices also includes a field emitter tip disposed on the substrate adjacent the at least one side surface, and an insulating layer disposed at least on at least one side surface adjacent the field emitter tip to prevent arcing between the field emitter tip and the conducting gate layer.

Abstract translation: 在衬底上提供场发射器阵列。 场发射器阵列包括场发射极器件。 场致发射器件中的至少一个包括设置在衬底上的具有顶表面和至少一个侧表面的导电栅极层。 所述场致发射器件中的至少一个还包括设置在邻近所述至少一个侧表面的所述衬底上的场发射极尖端，以及至少设置在与所述场发射极尖端相邻的至少一个侧表面上的绝缘层，以防止所述场致发射极之间的电弧 场发射极尖端和导电栅极层。

公开(公告)号：US20040095050A1

公开(公告)日：2004-05-20

申请号：US10400237

申请日：2003-03-26

Inventor： Liang Liu ,  ShouShan Fan

IPC: H01J001/02

CPC classification number: B82Y30/00 ,  B82Y10/00 ,  H01J1/3044 ,  H01J2201/30469

Abstract: A field emission device includes a substrate (11) and a carbon nanotube array (12) formed thereon. Carbon nanotubes (120) of the carbon nanotube array are parallel to each other and cooperatively form a plurality of substantially rod-shaped lower portions (121, 121null) and a plurality of corresponding tapered tips (122, 122null) above the lower portions. Each lower portion and tapered tips have a plurality of carbon nanotubes. Distances between adjacent tips are approximately uniform, and are more than one micrometer. Preferably, the distance is in the range from 1 to 30 micrometers. The field emission device with this structure has reduced shielding between adjacent carbon nanotubes and has decreased threshold voltage required for field emission by the carbon nanotubes. The field emission device also contributes to an improved field emission concentration and efficiency.

Abstract translation: 场发射器件包括衬底（11）和形成在其上的碳纳米管阵列（12）。 碳纳米管阵列的碳纳米管（120）彼此平行并协同地形成多个基本上棒状的下部（121,121'）和在下部上方的多个相应的锥形尖端（122,122'） 。 每个下部和锥形尖端具有多个碳纳米管。 相邻尖端之间的距离近似均匀，并且大于一微米。 优选地，距离在1至30微米的范围内。 具有这种结构的场致发射器件减少了相邻碳纳米管之间的屏蔽，并且具有降低由碳纳米管进行场发射所需的阈值电压。 场致发射器件还有助于改善场致发射浓度和效率。