摘要:
A wasted heat harvesting device for harvesting electricity including switching means configured to convey a magnetic field from a first region to at least a second region when the temperature of the switching means crosses a predetermined temperature.
摘要:
An object of the invention is to provide: an MgB2 superconducting thin-film wire that exhibits excellent Jc characteristics even under a 20 K magnetic field; and a method for producing thereof. The MgB2 superconducting thin-film wire includes a long substrate and an MgB2 thin film formed on the long substrate. The MgB2 thin film has a microtexture such that MgB2 columnar crystal grains stand densely together on the surface of the long substrate, and has Tc of 30 K or higher. In grain boundary regions of the MgB2 columnar crystal grains, a predetermined transition metal element is dispersed and segregated. The predetermined transition metal element is an element having a body-centered cubic lattice structure.
摘要:
A method of fabricating in-plane or out-of-plane thin-film multi-axial magnetic anisotropy devices is provided that includes either depositing a magnetic material with perpendicular or partially perpendicular anisotropy patterned into a multi-directional, curved, or closed path or depositing a thin-film of magnetic material on a piezoelectric material, where the magnetic material is arranged in a pattern, depositing excitation electrodes on the piezoelectric material, where the excitation electrodes are arranged in a pattern, biasing the piezoelectric material, by applying a voltage across the excitation electrodes, where an electric field through the piezoelectric material is generated by the applied voltage across the excitation electrodes, where the piezoelectric material is biased by the electric field to provide stress to the magnetic material, where the stress rotates a magnetization of the magnetic material, and patterning the magnetic material into a multi-directional, curved, or closed path.
摘要:
A semiconductor structure is provided. The semiconductor structure includes a substrate; and a plurality of parallel first conductive layers formed on the substrate. The semiconductor structure also includes a composite magnetic structure having a plurality of magnetic layers and a plurality of insulation layers with a sandwich arrangement formed on a portion of the substrate and portions of surfaces of the plurality of first conductive layers. Further, the semiconductor structure includes a plurality of first conductive vias and a plurality of second conductive vias formed on the first conductive layers at both sides of the composite magnetic structure. Further, the semiconductor structure also includes a plurality of second conductive layers formed on a top surface of the composite magnetic structure, top surfaces of the first conductive vias, and top surfaces of the second conductive vias to form at least one coil structure wrapping around the composite magnetic structure.
摘要:
A paste for an NFC magnetic sheet is provided, which comprises: a magnetic powder; an organic carrier; and a nanoscale alumina powder; wherein a weight ratio of the nanoscale alumina powder to the magnetic powder ranges from about 0.0005 to about 0.005. A method of preparing the paste for the NFC magnetic sheet and an NFC magnetic sheet are also provided.
摘要:
A method in one embodiment includes applying a current to a lead of a tunneling magnetoresistance sensor for inducing joule heating of the lead or a heating layer, the level of joule heating being sufficient to anneal a magnetic layer of the sensor; and maintaining the current at the level for an amount of time sufficient to anneal the tunneling magnetoresistive (TMR) sensor. Additional systems and methods are also presented.
摘要:
A magnetic material may include α″-Fe16(NxZ1-x)2 or a mixture of α″-Fe16N2 and α″-Fe16Z2, where Z includes at least one of C, B, or O, and x is a number greater than zero and less than one. In some examples, the magnetic material including α″-Fe16(NxZ1-x)2 or a mixture of α″-Fe16N2 and α″-Fe16Z2 may include a relatively high magnetic saturation, such as greater than about 219 emu/gram, greater than about 242 emu/gram, or greater than about 250 emu/gram. In addition, in some examples, the magnetic material including α″-Fe16(NxZ1-x)2 or a mixture of α″-Fe16N2 and α″-Fe16Z2 may include a relatively low coercivity. Techniques for forming the magnetic material are also described.
摘要:
An integrated magnetic film enhanced inductor and a method of forming an integrated magnetic film enhanced inductor are disclosed. The integrated magnetic film enhanced inductor includes an inductor metal having a first portion and a second portion, a top metal or bottom metal coupled to the inductor metal, and an isolation film disposed one of in, on, and adjacent to at least one of the first portion and the second portion of the inductor metal. The isolation film includes a magnetic material, such as a magnetic film.
摘要:
A method of embedding a magnetic component in a substrate is disclosed. Holes are formed in a substrate by mechanically drilling. Each of the holes includes a top opening, a bottom and sidewall, wherein an area of the top opening is larger than that of the bottom. The sidewall extends from the top opening vertically downwards to a predetermined depth, and then is slanted inwardly to the bottom to form a sloped sidewall at the bottom of the hole. A predetermined region is defined along a portion of an edge of the top opening, and a portion of the substrate material under the predetermined region is removed by routing to form a component accommodation trench with a portion of the sloped sidewall at the bottom. Then, a magnetic component is placed into the component accommodation trench.
摘要:
A substrate having a pattern of magnetic properties may be formed by forming a magnetically inactive layer on the substrate, forming a magnetic precursor on the magnetically inactive layer, and forming magnetically active domains separated by magnetically inactive domains in the magnetic precursor by applying thermal energy to the magnetic precursor. The thermal energy may be applied using a laser, which may be pulsed. Forming the magnetically active domains may include crystallizing portions of the magnetic precursor.