公开(公告)号：US11322406B2

公开(公告)日：2022-05-03

申请号：US16916408

申请日：2020-06-30

申请人： DISCO CORPORATION

发明人： Shigenori Harada ,  Minoru Matsuzawa ,  Hayato Kiuchi ,  Yoshiaki Yodo ,  Taro Arakawa ,  Masamitsu Agari ,  Emiko Kawamura ,  Yusuke Fujii ,  Toshiki Miyai ,  Makiko Ohmae

IPC分类号： H01L21/78 ,  H01L21/683 ,  H01L21/268 ,  B23K26/364 ,  H01L21/68 ,  H01L23/544

摘要： A wafer processing method includes a polyester sheet providing step of positioning a wafer in an inside opening of a ring frame and providing a polyester sheet on a back side or a front side of the wafer and on a back side of the ring frame, a uniting step of heating the polyester sheet as applying a pressure to the polyester sheet to thereby unite the wafer and the ring frame through the polyester sheet by thermocompression bonding, a dividing step of applying a laser beam to the wafer to form modified layers in the wafer, thereby dividing the wafer into individual device chips, and a pickup step of applying an ultrasonic wave to the polyester sheet in each of the plurality of separate regions corresponding to each device chip, pushing up each device chip through the polyester sheet, then picking up each device chip from the polyester sheet.

公开(公告)号：US11322383B2

公开(公告)日：2022-05-03

申请号：US16744823

申请日：2020-01-16

申请人： DISCO CORPORATION

发明人： Senichi Ryo ,  Yukinobu Ohura ,  Hiroto Yoshida ,  Tomoaki Endo

IPC分类号： H01L21/683 ,  H01L23/544 ,  H01L21/268 ,  H01L21/78 ,  B23K26/00 ,  B23K26/402 ,  H01L21/02 ,  B23K103/00

摘要： A protective film agent for laser dicing that includes a solution in which at least a water-soluble resin, an organic solvent, and an ultraviolet absorber are mixed and in which the content of sodium (Na) of the solution is equal to or lower than 100 ppb in weight ratio. Preferably, the solution further includes an antioxidant.

公开(公告)号：US11322358B2

公开(公告)日：2022-05-03

申请号：US16963147

申请日：2019-01-14

申请人： LASER SYSTEMS & SOLUTIONS OF EUROPE

发明人： Karim Huet ,  Fulvio Mazzamuto ,  Cyril Dutems

IPC分类号： H01L21/00 ,  H01L21/268 ,  B23K26/0622 ,  B23K26/064 ,  B23K26/067 ,  G02B27/28 ,  B23K101/40

摘要： Disclosed is a method of laser irradiation of a patterned semiconductor device including a periodic array of sub-wavelength fin-like structures, all fin-like structures upstanding from a base face of the semiconductor device and defining an upper face of the periodic array opposite the base face, each fin-like structure having: a width along a first direction parallel to the base face of the order of magnitude or smaller than the laser wavelength; a length along a second direction parallel to the base face and perpendicular to the first direction at least 3 times greater than the width; and a height along a third direction perpendicular to the base face. The method includes: generating a UV pulsed laser beam using a laser module; and irradiating at least a portion of the upper face with the laser beam.

公开(公告)号：US11322356B2

公开(公告)日：2022-05-03

申请号：US16702092

申请日：2019-12-03

申请人： Denton Jarvis

发明人： Denton Jarvis

IPC分类号： H01L21/223 ,  H01L21/268 ,  H01L29/16 ,  H01L29/20 ,  H01J37/32 ,  H01L29/24

摘要： A system and method for manufacturing a lattice structure of ionized particles on a substrate, wherein the process may be improved by controlling the number of ionized particles that are ejected from an ionizer and directed to a substrate, and wherein the ionized particles are disposed on the substrate, thereby enabling the creation of a lattice structure that may be as thin as a single layer of ionized particles.

公开(公告)号：US11315980B1

公开(公告)日：2022-04-26

申请号：US17572550

申请日：2022-01-10

申请人： Monolithic 3D Inc.

发明人： Deepak C. Sekar ,  Zvi Or-Bach

IPC分类号： H01L21/00 ,  H01L27/24 ,  H01L21/268 ,  H01L21/683 ,  H01L21/762 ,  H01L21/822 ,  H01L21/84 ,  H01L27/06 ,  H01L27/108 ,  H01L27/11 ,  H01L27/11529 ,  H01L27/11551 ,  H01L27/11578 ,  H01L27/12 ,  H01L29/78 ,  H01L29/423 ,  H01L27/22 ,  H01L27/105 ,  H01L27/11526 ,  H01L27/11573 ,  H01L45/00

摘要： A semiconductor device, the device including: a plurality of transistors, where at least one of the plurality of transistors includes a first single crystal source, channel, and drain, where at least one of the plurality of transistors includes a second single crystal source, channel, and drain, where the second single crystal source, channel, and drain is disposed above the first single crystal source, channel, and drain, where at least one of the plurality of transistors includes a third single crystal source, channel, and drain, where the third single crystal source, channel, and drain is disposed above the second single crystal source, channel, and drain, where at least one of the plurality of transistors includes a fourth single crystal source, channel, and drain, and where the first single crystal source or drain, and the second single crystal source or drain each include n+ doped regions.

公开(公告)号：US20220108882A1

公开(公告)日：2022-04-07

申请号：US17447847

申请日：2021-09-16

申请人： DISCO CORPORATION

发明人： Toshio TSUCHIYA ,  Toshiyuki YOSHIKAWA ,  Tomoyuki HONGO

IPC分类号： H01L21/02 ,  G02B26/10 ,  H01L21/683 ,  H01L21/268 ,  B23K26/50

摘要： A processing method of a workpiece with a circular disc shape includes sticking a tape to one surface of the workpiece and integrating the workpiece and a frame through the tape, holding the workpiece by a holding unit with the interposition of the tape, and irradiating the other surface of the workpiece located on the opposite side to the one surface with a pulsed laser beam having such a wavelength as to be absorbed by the workpiece from the side of the other surface. In irradiating the laser beam, the other surface is annularly irradiated with the laser beam in the state in which the orientation of the laser beam is adjusted in such a manner that the laser beam has an angle of incidence formed due to inclination with respect to a normal to the other surface of the workpiece by a predetermined angle.

公开(公告)号：US20220084827A1

公开(公告)日：2022-03-17

申请号：US17534835

申请日：2021-11-24

申请人： HAMAMATSU PHOTONICS K.K.

发明人： Takeshi SAKAMOTO ,  Ryuji Sugiura ,  Yuta Kondoh ,  Naoki Uchiyama

IPC分类号： H01L21/268 ,  H01L21/683 ,  H01L25/065

摘要： A laminated element manufacturing method includes a first forming step of forming a first modified region along a line to cut by irradiating a semiconductor substrate of a first wafer with a laser light along the line to cut, a first grinding step of grinding the semiconductor substrate of the first wafer, a bonding step of bonding a circuit layer of a second wafer to the semiconductor substrate of the first wafer, a second forming step of forming a second modified region along the line to cut by irradiating a semiconductor substrate of the second wafer with a laser light along the line to cut, and a second grinding step of grinding the semiconductor substrate of the second wafer.

公开(公告)号：US11276575B2

公开(公告)日：2022-03-15

申请号：US16690394

申请日：2019-11-21

申请人： SCREEN Holdings Co., Ltd.

发明人： Yoshihide Nozaki ,  Tomohiro Ueno

IPC分类号： H01L21/00 ,  H01L21/268 ,  H01L21/324 ,  H01L21/66 ,  G01N21/55 ,  H01L21/67

摘要： Multiple theoretical reflectances determined by simulation for a silicon substrate with thin films of multiple types and thicknesses formed thereon are registered in association with the types and the thicknesses in a database. A carrier storing semiconductor wafers in a lot is transported into a heat treatment apparatus. A reflectance of a semiconductor wafer is measured by applying light to a surface of the semiconductor wafer. The theoretical reflectance of the semiconductor wafer is calculated from the measured reflectance thereof. A theoretical reflectance closely resembling the theoretical reflectance of the semiconductor wafer is extracted from among the multiple theoretical reflectances registered in the database, whereby the type and thickness of the thin film formed on the surface of the semiconductor wafer are specified. Treatment conditions for the semiconductor wafer are determined based on the specified type and thickness of the thin film.

公开(公告)号：US11239349B2

公开(公告)日：2022-02-01

申请号：US16838807

申请日：2020-04-02

申请人： SUMITOMO HEAVY INDUSTRIES, LTD.

发明人： Takaomi Suzuki ,  Masaki Sakamoto

IPC分类号： H01L21/265 ,  H01L29/739 ,  H01L21/268 ,  H01L27/07 ,  B23K26/06 ,  B23K26/354 ,  B23K26/0622 ,  H01L29/08 ,  H01L29/66 ,  H01L21/8249 ,  B23K26/08 ,  B23K26/00 ,  H01L21/324 ,  H01L29/06 ,  B23K101/40 ,  B23K103/00 ,  B23K103/16 ,  H01L29/10 ,  H01L29/861

摘要： A first region is formed by injecting a first condition type first dopant into a surface layer portion of an IGBT section of a semiconductor substrate. A second region is formed by injecting a second condition type second dopant into a region of the IGBT section shallower than the first region. An amorphous third region is formed by injecting the first conduction type third dopant into a surface layer portion of a diode section at a concentration higher than that of the second dopant. Thereafter, the IGBT section and the diode section are laser-annealed under conditions in which the third region is partially melted and the first dopant is activated. Subsequently, a surface layer portion which is shallower than the second injection region in the entire region of the IGBT section and the diode section is melted and crystallized by annealing the IGBT section and the diode section.

公开(公告)号：US20220028690A1

公开(公告)日：2022-01-27

申请号：US17375445

申请日：2021-07-14

申请人： THE JAPAN STEEL WORKS, LTD.

发明人： Kenichi OHMORI ,  Suk-Hwan CHUNG ,  Ryosuke SATO ,  Nobuo OKU

IPC分类号： H01L21/02 ,  H01L21/268

摘要： A laser annealing apparatus according to an embodiment includes a laser light source, an annealing optical system, a linear irradiation region along a Y-direction, a moving mechanism configured to change a relative position of the irradiation region with respect to the substrate along an X-direction, an illumination light source configured to generate illumination light for illuminating the substrate along a third direction, and a detector configured to detect detection light reflected, in a fourth direction, on the substrate illuminated by the illumination light so as to photograph an annealed part of the substrate in a linear field of view along the Y-direction. In a YZ-plane view, the third direction is inclined from the vertical direction and the fourth direction is inclined from the vertical direction.