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    OPTICAL FIBER LASER DEVICE AND OPTICAL FIBER LASER PROVIDING METHOD
    85.
    发明申请
    OPTICAL FIBER LASER DEVICE AND OPTICAL FIBER LASER PROVIDING METHOD 有权
    光纤激光器件和光纤激光器提供方法

    公开(公告)号：US20170063019A1

    公开(公告)日：2017-03-02

    申请号：US15307896

    申请日：2015-02-09

    Applicant: GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY

    Inventor： Bong Ahn YU ,  Young Chul NOH ,  Woo Jin SHIN ,  Chang soo JUNG ,  Yeung Lak LEE

    IPC: H01S3/067 ,  H01S3/16 ,  H01S3/094

    CPC classification number: H01S3/06754 ,  H01S3/06758 ,  H01S3/06762 ,  H01S3/094003 ,  H01S3/094053 ,  H01S3/094096 ,  H01S3/1618 ,  H01S3/2391

    Abstract: Disclosed herein is an optical fiber laser device including a seed unit for providing at least two seed lights having different wavelengths; and an amplifying unit for amplifying the at least two seed lights. The amplifying unit includes: a preamplifying unit for amplifying the at least two seed lights by using excitation light of which the wavelength is shorter than the wavelengths of the seed lights; and a final amplifying unit to which no separate excitation light source is provided. The final amplifying unit amplifies the seed light having the longest wavelength by using the other seed light as excitation light with respect to the seed light having the longest wavelength among the at least two seed light.

    Abstract translation: 本发明公开了一种光纤激光装置，包括用于提供具有不同波长的至少两个种子光的种子单元; 以及用于放大所述至少两个种子光的放大单元。 放大单元包括：前置放大单元，用于通过使用波长短于种子光的波长的激发光来放大所述至少两个种子光; 以及没有设置单独的激发光源的最终放大单元。 最终的放大单元通过使用其他种子光作为相对于至少两个种子光中具有最长波长的种子光的激发光来放大具有最长波长的种子光。

    Apparatus and method for detecting location of moving body, lighting apparatus, air conditioning apparatus, security apparatus, and parking lot management apparatus
    86.
    发明授权
    Apparatus and method for detecting location of moving body, lighting apparatus, air conditioning apparatus, security apparatus, and parking lot management apparatus 有权
    用于检测移动体的位置的装置和方法，照明装置，空调装置，安全装置和停车场管理装置

    公开(公告)号：US09560440B2

    公开(公告)日：2017-01-31

    申请号：US14582586

    申请日：2014-12-24

    Applicant: GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY

    Inventor： Se-Myung Wang ,  Kihyun Kim ,  Homin Ryu

    IPC: H04R3/00 ,  H04R1/32 ,  H04R1/08 ,  H04R1/40 ,  G01S15/10 ,  G01S15/42

    CPC classification number: H04R1/32 ,  G01S15/10 ,  G01S15/42 ,  H04R1/08 ,  H04R1/40 ,  H04R3/005 ,  H04R2201/003

    Abstract: An apparatus and method for detecting the location of a moving body. The apparatus may include a speaker configured to intermittently generate a pulse signal to a detection space and a microphone array configured to obtain a reflected sound of the pulse signal that is generated in the detection space. The location of a moving body is estimated by extracting a change of a sound field from the reflected sound. The present invention can be applied to an apparatus for detecting a moving body without any side effect because the location of a moving body can be accurately detected up to an angle and distance. Furthermore, the present invention can be applied to various application apparatuses, such as a lighting apparatus, an air conditioning apparatus, a security apparatus, and a parking lot management apparatus because there is no problem in health and there is no side effect in application.

    Abstract translation: 一种用于检测移动体的位置的装置和方法。 该装置可以包括配置成间歇地向检测空间生成脉冲信号的扬声器和配置成获得在检测空间中产生的脉冲信号的反射声的麦克风阵列。 通过从反射的声音提取声场的改变来估计移动体的位置。 本发明可以应用于用于检测移动体的装置，而没有任何副作用，因为可以精确地检测到移动体的位置达到一定的角度和距离。 此外，本发明可以应用于诸如照明装置，空调装置，安全装置和停车场管理装置的各种应用装置，因为健康没有问题，并且在应用中没有副作用。

    Quantitative analyzing method of CIGS film using a laser induced breakdown spectroscopy
    87.
    发明授权
    Quantitative analyzing method of CIGS film using a laser induced breakdown spectroscopy 有权
    使用激光诱导击穿光谱法对CIGS膜的定量分析方法

    公开(公告)号：US09557273B2

    公开(公告)日：2017-01-31

    申请号：US14143723

    申请日：2013-12-30

    Applicant: GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY

    Inventor： Sungho Jeong ,  Jeong Hwan In ,  Chan Kyu Kim ,  Seokhee Lee ,  Hakjae Lee

    IPC: G01C19/00 ,  G01D18/00 ,  G01F25/00 ,  G06F19/00 ,  G01N21/71

    CPC classification number: G01N21/718 ,  Y02E10/541 ,  Y02E10/543

    Abstract: Disclosed herein is a quantitative analyzing method of a copper indium gallium selenide (CIGS) film, the method including: obtaining spectra by irradiating a laser on the plurality of CIGS films having different component compositions, selecting a first spectral line and a second spectral line among the spectra of target elements to be analyzed and obtaining a correlation plot between a measured intensity of the first spectral line and a measured intensity of the second spectral line, correcting the measured intensity of the first spectral line and the measured intensity of the second spectral line using results obtained by curve fitting the correlation plot, obtaining a linear calibration curve using the corrected intensity of the first spectral line and the corrected intensity of the second spectral line; and comparing the linear calibration curve with LIBS analysis of a target sample to be analyzed.

    Abstract translation: 本文公开了一种铜铟镓硒（CIGS）膜的定量分析方法，该方法包括：通过在具有不同组成成分的多个CIGS膜上照射激光来获得光谱，选择第一光谱线和第二光谱线 要分析的目标元素的光谱，并且获得第一光谱线的测量强度和第二光谱线的测量强度之间的相关图，校正第一光谱线的测量强度和第二光谱线的测量强度 使用通过曲线拟合相关图获得的结果，使用第一光谱线的校正强度和第二光谱线的校正强度获得线性校准曲线; 并将线性校准曲线与要分析的目标样品的LIBS分析进行比较。

    Method for growing nitride-based semiconductor with high quality
    90.
    发明授权
    Method for growing nitride-based semiconductor with high quality 有权
    高品质生长氮化物半导体的方法

    公开(公告)号：US09455144B2

    公开(公告)日：2016-09-27

    申请号：US14859898

    申请日：2015-09-21

    Applicant: GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY

    Inventor： Dong-Seon Lee ,  Dong-Ju Seo ,  Jun-Youb Lee ,  Chang-Mo Kang ,  Won-Seok Seong ,  Mun-Do Park

    IPC: H01L21/02 ,  H01L21/033 ,  H01L21/311

    CPC classification number: H01L21/02639 ,  H01L21/0254 ,  H01L21/02642 ,  H01L21/02647 ,  H01L21/0331 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/30617 ,  H01L21/31111 ,  H01L21/31116

    Abstract: Disclosed is a method for growing a nitride-based semiconductor with high quality, the method including: forming a first mask layer on a substrate and forming a second mask layer on the first mask layer; performing dry etching on the first mask layer and the second mask layer to form an opening in which a part of the substrate is exposed; performing selective wet etching on the first mask layer in the opening to form a recess in which a part of the substrate is exposed; depositing a third mask layer in the recess; and growing a nitride-based semiconductor from the exposed part of the substrate on sides of the third mask layer and expanding the growth via the opening.

    Abstract translation: 公开了一种高质量生长氮化物基半导体的方法，所述方法包括：在衬底上形成第一掩模层并在第一掩模层上形成第二掩模层; 在所述第一掩模层和所述第二掩模层上进行干蚀刻以形成所述基板的一部分露出的开口; 对所述开口中的所述第一掩模层进行选择性湿法蚀刻以形成所述基板的一部分露出的凹部; 在所述凹部中沉积第三掩模层; 以及从所述第三掩模层的侧面上的所述衬底的所述暴露部分生长氮化物基半导体，并且经由所述开口膨胀所述增长。

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