公开(公告)号：US20060172489A1

公开(公告)日：2006-08-03

申请号：US11044721

申请日：2005-01-28

Applicant: Harald Seidl ,  Martin Gutsche ,  Shrinivas Govindarajan

Inventor： Harald Seidl ,  Martin Gutsche ,  Shrinivas Govindarajan

IPC: H01L21/8242 ,  H01L21/31 ,  H01L21/469

CPC classification number: H01L21/0228 ,  C23C16/34 ,  C23C16/40 ,  C23C16/45525 ,  C23C16/45529 ,  C23C16/45531 ,  H01L21/02142 ,  H01L21/02156 ,  H01L21/02178 ,  H01L21/02192 ,  H01L21/02194 ,  H01L21/3141 ,  H01L21/3143 ,  H01L27/1087 ,  H01L28/91 ,  H01L29/66181

Abstract: Method for producing a dielectric material on a semiconductor device with an atomic layer deposition procedure, whereby an aluminum oxide nitride or a silicon oxide nitride or an aluminum silicon oxide nitride layer is deposited comprising a rare earth metal-element. The invention describes a semiconductor device with a dielectric layer comprising aluminum oxide nitride or silicon oxide nitride or an aluminum silicon oxide nitride comprising a rare earth metal element.

Abstract translation: 在具有原子层沉积程序的半导体器件上制造电介质材料的方法，由此沉积包含稀土金属元素的氧化铝氮化物或氧化硅氮化物或氧化铝氮化硅层。 本发明描述了具有包括氧化铝氮化物或氧化硅氮化物的介电层的半导体器件或包含稀土金属元素的铝氧化硅氮化物。

公开(公告)号：US20060094233A1

公开(公告)日：2006-05-04

申请号：US11256300

申请日：2005-10-21

Applicant: Martin Gutsche ,  Harald Seidl

Inventor： Martin Gutsche ,  Harald Seidl

IPC: H01L21/4763

CPC classification number: H01L21/76801 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In a method for determining an edge coverage during coating processes a substrate is provided, a mask layer is deposited on the substrate, at least one through hole is formed in the mask layer and at least one first trench-type depression is formed in the substrate by patterning the substrate and the mask layer. An expanded second trench-type depression which extends in a direction parallel to the surface of the substrate is obtained by expanding isotropically the first trench-type depression. The second trench-type depression comprises a lateral trench opening at at least one lateral end region so that a coating material can penetrate laterally into the second trench-type depression through the trench opening.

Abstract translation: 在涂覆工艺中确定边缘覆盖度的方法中，提供了一种衬底，掩模层沉积在衬底上，在掩模层中形成至少一个通孔，并在衬底中形成至少一个第一沟槽型凹陷 通过图案化基板和掩模层。 通过各向同性地扩展第一沟槽型凹陷，获得沿与基板表面平行的方向延伸的扩展的第二沟槽型凹陷。 第二沟槽式凹陷包括在至少一个侧向端部区域处的横向沟槽开口，使得涂层材料可以通过沟槽开口横向穿过第二沟槽型凹陷。

公开(公告)号：US06693016B2

公开(公告)日：2004-02-17

申请号：US10233690

申请日：2002-09-03

Applicant: Martin Gutsche ,  Thomas Hecht ,  Matthias Leonhardt ,  Uwe Schröder ,  Harald Seidl

Inventor： Martin Gutsche ,  Thomas Hecht ,  Matthias Leonhardt ,  Uwe Schröder ,  Harald Seidl

IPC: H01L2120

CPC classification number: H01L27/10861

Abstract: The novel trench capacitors have a constant or increased capacitance. Materials for a second electrode region and if appropriate a first electrode region include a metallic material, a metal nitride, or the like, and/or a dielectric region is formed with a material with an increased dielectric constant. An insulation region is formed in the upper wall region of the trench after the first electrode region or the second electrode region has been formed, by selective and local oxidation.

Abstract translation: 新颖的沟槽电容器具有恒定或增加的电容。 第二电极区域的材料和适当的第一电极区域包括金属材料，金属氮化物等，和/或介电区域由介电常数增加的材料形成。 通过选择性和局部氧化，在形成第一电极区域或第二电极区域之后，在沟槽的上壁区域中形成绝缘区域。

公开(公告)号：US06620724B1

公开(公告)日：2003-09-16

申请号：US10142518

申请日：2002-05-09

Applicant: Uwe Schroeder ,  Helmut Horst Tews ,  Irene McStay ,  Manfred Hauf ,  Matthias Goldbach ,  Bernhard Sell ,  Harald Seidl ,  Dirk Schumann ,  Rajarao Jammy ,  Joseph F. Shepard, Jr. ,  Jean-Marc Rousseau

Inventor： Uwe Schroeder ,  Helmut Horst Tews ,  Irene McStay ,  Manfred Hauf ,  Matthias Goldbach ,  Bernhard Sell ,  Harald Seidl ,  Dirk Schumann ,  Rajarao Jammy ,  Joseph F. Shepard, Jr. ,  Jean-Marc Rousseau

IPC: H01L214763

CPC classification number: H01L28/60 ,  H01L27/10861

Abstract: Semiconductor devices having deep trenches with fill material therein having low resistivity are provided along with methods of fabricating such semiconductor devices.

Abstract translation: 提供其具有低电阻率的具有低填充材料的深沟槽的半导体器件以及制造这种半导体器件的方法。