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98 条记录 (耗时 0.026 秒)

    Stacked memory device and method thereof
    83.
    发明授权
    Stacked memory device and method thereof 有权
    堆叠式存储器件及其方法

    公开(公告)号：US08547719B2

    公开(公告)日：2013-10-01

    申请号：US12588275

    申请日：2009-10-09

    申请人： Jae-chul Park ,  Kee-won Kwon ,  I-hun Song ,  Young-soo Park ,  Chang-jung Kim ,  Sang-wook Kim ,  Sun-il Kim

    发明人： Jae-chul Park ,  Kee-won Kwon ,  I-hun Song ,  Young-soo Park ,  Chang-jung Kim ,  Sang-wook Kim ,  Sun-il Kim

    IPC分类号： G11C5/02

    CPC分类号： G11C5/02 ,  G11C5/143 ,  G11C7/18 ,  G11C8/12 ,  G11C13/0023 ,  G11C2213/71

    摘要： A stacked memory device includes a plurality of memory layers, where at least one of the plurality of memory layers is stacked on another of the plurality of memory layers and each of the memory layers includes an array of memory cells, a first active circuit unit configured to classify and process address information for at least one of the memory cells as vertical address information and horizontal address information, and at least one second active circuit unit configured to generate a memory selection signal for at least one of the memory cells based on signals processed by the first active circuit unit.

    摘要翻译： 堆叠存储器件包括多个存储器层，其中多个存储器层中的至少一个堆叠在多个存储器层中的另一个上，并且每个存储器层包括存储器单元阵列，第一有源电路单元配置 将至少一个存储器单元的地址信息分类并处理为垂直地址信息和水平地址信息，以及至少一个第二有源电路单元，配置为基于处理的信号为存储器单元中的至少一个生成存储器选择信号 由第一有源电路单元。

    Wafer-scale X-ray detector and method of manufacturing the same
    84.
    发明授权
    Wafer-scale X-ray detector and method of manufacturing the same 有权
    晶圆级X射线检测器及其制造方法

    公开(公告)号：US08482108B2

    公开(公告)日：2013-07-09

    申请号：US13109435

    申请日：2011-05-17

    申请人： Jae-chul Park ,  Chang-jung Kim ,  Sang-wook Kim ,  Sun-il Kim

    发明人： Jae-chul Park ,  Chang-jung Kim ,  Sang-wook Kim ,  Sun-il Kim

    IPC分类号： H01L31/115

    CPC分类号： H01L27/14676 ,  H01L23/481 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14659 ,  H01L27/14661 ,  H01L27/1469 ,  H01L2224/0401 ,  H01L2224/05 ,  H01L2224/13 ,  H01L2224/13025 ,  H01L2224/16225 ,  H01L2224/16227

    摘要： A wafer-scale x-ray detector and a method of manufacturing the same are provided. The wafer-scale x-ray detector includes: a seamless silicon substrate electrically connected to a printed circuit substrate; a chip array having a plurality of pixel pads formed on a central region thereof and a plurality of pin pads formed at edges thereof on the seamless silicon substrate; a plurality of pixel electrodes formed to correspond to the pixel pads; vertical wirings and horizontal wirings formed to compensate a difference of regions expanded towards the pixel electrodes from the pixel pads between the chip array and the pixel electrodes; a redistribution layer having an insulating layer to separate the vertical wirings and the horizontal wirings; and a photoconductor layer and a common electrode which cover the pixel electrodes on the redistribution layer.

    摘要翻译： 提供了晶片级X射线检测器及其制造方法。 晶片级x射线检测器包括：电连接到印刷电路衬底的无缝硅衬底; 芯片阵列，其具有形成在其中心区域上的多个像素焊盘和在其无端硅衬底上的边缘处形成的多个焊盘; 形成为对应于所述像素焊盘的多个像素电极; 垂直布线和水平布线形成以补偿从芯片阵列和像素电极之间的像素焊盘向像素电极扩展的区域的差异; 再分布层，具有用于分离垂直布线和水平布线的绝缘层; 以及覆盖再分布层上的像素电极的感光体层和公共电极。

    Transistors, methods of manufacturing a transistor, and electronic devices including a transistor
    86.
    发明授权
    Transistors, methods of manufacturing a transistor, and electronic devices including a transistor 有权
    晶体管，制造晶体管的方法以及包括晶体管的电子器件

    公开(公告)号：US08461597B2

    公开(公告)日：2013-06-11

    申请号：US12805648

    申请日：2010-08-11

    申请人： Sun-il Kim ,  Jae-chul Park ,  Sang-wook Kim ,  Young-soo Park ,  Chang-jung Kim

    发明人： Sun-il Kim ,  Jae-chul Park ,  Sang-wook Kim ,  Young-soo Park ,  Chang-jung Kim

    IPC分类号： H01L29/786

    CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/1248 ,  H01L29/66969 ,  H01L29/78606

    摘要： Transistors, methods of manufacturing a transistor, and electronic devices including a transistor are provided, the transistor includes a channel layer, a source and a drain respectively contacting opposing ends of the channel layer, a gate corresponding to the channel layer, a gate insulating layer between the channel layer and the gate, and a first passivation layer and a second passivation layer sequentially disposed on the gate insulating layer. The first passivation layer covers the source, the drain, the gate, the gate insulating layer and the channel layer. The second passivation layer includes fluorine (F).

    摘要翻译： 提供晶体管，制造晶体管的方法和包括晶体管的电子器件，晶体管包括沟道层，分别接触沟道层的相对端的源极和漏极，对应于沟道层的栅极，栅极绝缘层 在沟道层和栅极之间，以及顺序地设置在栅极绝缘层上的第一钝化层和第二钝化层。 第一钝化层覆盖源极，漏极，栅极，栅极绝缘层和沟道层。 第二钝化层包括氟（F）。

    Large-Scale X-Ray Detectors
    87.
    发明申请
    Large-Scale X-Ray Detectors 有权
    大型X射线探测器

    公开(公告)号：US20120223241A1

    公开(公告)日：2012-09-06

    申请号：US13212759

    申请日：2011-08-18

    申请人： Sang-wook Kim ,  Chang-jung Kim ,  Jae-chul Park ,  Sun-il Kim

    发明人： Sang-wook Kim ,  Chang-jung Kim ,  Jae-chul Park ,  Sun-il Kim

    IPC分类号： H01L27/146 ,  G01T1/24 ,  G01T1/16

    CPC分类号： H01L27/14676 ,  H01L27/14618 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An X-ray detector including a plurality of chips on a printed circuit board, each of the plurality of chips including a plurality of pixel pads on a center portion of the printed circuit board and a plurality of pin pads surrounding the plurality of pixel pads, a plurality of pixel electrodes on and corresponding to the plurality of chips, a redistribution layer electrically connecting the plurality of pixel electrodes and the plurality of pixel pads, a plurality of first electrode pads on a surface opposite to a surface of the plurality of chips including the plurality of pin pads, a wire electrically connecting the plurality of first electrode pads and the plurality of pin pads, a photoconductor on the plurality of pixel electrodes, and a common electrode on the photoconductor.

    摘要翻译： 一种在印刷电路板上包括多个芯片的X射线检测器，所述多个芯片中的每一个包括印刷电路板的中心部分上的多个像素焊盘和围绕所述多个像素焊盘的多个焊盘， 在多个芯片上并对应于多个芯片的多个像素电极，将多个像素电极和多个像素焊盘电连接的再分配层，在与多个芯片的表面相反的表面上的多个第一电极焊盘，包括 所述多个针焊盘，电连接所述多个第一电极焊盘和所述多个焊盘的导线，所述多个像素电极上的光电导体以及所述光电导体上的公共电极。

    Channel layers and semiconductor devices including the same
    88.
    发明授权
    Channel layers and semiconductor devices including the same 有权
    通道层和包括其的半导体器件

    公开(公告)号：US08232551B2

    公开(公告)日：2012-07-31

    申请号：US12458491

    申请日：2009-07-14

    申请人： Sun-il Kim ,  I-hun Song ,  Chang-jung Kim ,  Jae-chul Park ,  Sang-wook Kim

    发明人： Sun-il Kim ,  I-hun Song ,  Chang-jung Kim ,  Jae-chul Park ,  Sang-wook Kim

    IPC分类号： H01L29/26

    CPC分类号： H01L29/7869 ,  H01L29/78696

    摘要： Channel layers and semiconductor devices including the channel layers are disclosed. A channel layer may include a multi-layered structure. Layers forming the channel layer may have different carrier mobilities and/or carrier densities. The channel layer may have a double layered structure including a first layer and a second layer which may be formed of different oxides. Characteristics of the transistor may vary according to materials used to form the channel layers and/or thicknesses thereof.

    摘要翻译： 公开了包括沟道层的通道层和半导体器件。 沟道层可以包括多层结构。 形成沟道层的层可具有不同的载流子迁移率和/或载流子密度。 沟道层可以具有双层结构，其包括可由不同氧化物形成的第一层和第二层。 晶体管的特性可以根据用于形成沟道层的材料和/或其厚度而变化。

    X-ray detector including oxide semiconductor transistor
    90.
    发明申请
    X-ray detector including oxide semiconductor transistor 有权
    X射线检测器包括氧化物半导体晶体管

    公开(公告)号：US20110240869A1

    公开(公告)日：2011-10-06

    申请号：US12926921

    申请日：2010-12-17

    申请人： Sun-il Kim ,  Jae-chul Park ,  Sang-wook Kim ,  Chang-jung Kim

    发明人： Sun-il Kim ,  Jae-chul Park ,  Sang-wook Kim ,  Chang-jung Kim

    IPC分类号： G01T1/24

    CPC分类号： H01L31/085 ,  G01T1/24

    摘要： Example embodiments are directed an X-ray detector including an oxide semiconductor transistor. The X-ray detector including the oxide semiconductor transistor includes an oxide semiconductor transistor and a signal storage capacitor in parallel to each other on a substrate. The oxide semiconductor transistor includes a channel formed of an oxide semiconductor material, and a photoconductor. A pixel electrode and a common electrode are formed on opposite surfaces of the photoconductor. The channel includes ZnO, or a compound including ZnO and at least one selected from a group consisting of gallium (Ga), indium (In), hafnium (Hf), and tin (Sn).

    摘要翻译： 示例性实施例涉及包括氧化物半导体晶体管的X射线检测器。 包括氧化物半导体晶体管的X射线检测器包括在基板上彼此平行的氧化物半导体晶体管和信号存储电容器。 氧化物半导体晶体管包括由氧化物半导体材料形成的沟道和感光体。 像素电极和公共电极形成在光电导体的相对表面上。 该通道包括ZnO或包含ZnO和选自镓（Ga），铟（In），铪（Hf）和锡（Sn）中的至少一种的化合物。