利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

150 条记录 (耗时 0.031 秒)

    Transistors, methods of manufacturing a transistor, and electronic devices including a transistor
    2.
    发明申请
    Transistors, methods of manufacturing a transistor, and electronic devices including a transistor 有权
    晶体管，制造晶体管的方法以及包括晶体管的电子器件

    公开(公告)号：US20110175080A1

    公开(公告)日：2011-07-21

    申请号：US12805648

    申请日：2010-08-11

    申请人： Sun-il Kim ,  Jae-chul Park ,  Sang-wook Kim ,  Young-soo Park ,  Chang-jung Kim

    发明人： Sun-il Kim ,  Jae-chul Park ,  Sang-wook Kim ,  Young-soo Park ,  Chang-jung Kim

    IPC分类号： H01L29/12 ,  H01L29/78 ,  H01L21/16

    CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/1248 ,  H01L29/66969 ,  H01L29/78606

    摘要： Transistors, methods of manufacturing a transistor, and electronic devices including a transistor are provided, the transistor includes a channel layer, a source and a drain respectively contacting opposing ends of the channel layer, a gate corresponding to the channel layer, a gate insulating layer between the channel layer and the gate, and a first passivation layer and a second passivation layer sequentially disposed on the gate insulating layer. The first passivation layer covers the source, the drain, the gate, the gate insulating layer and the channel layer. The second passivation layer includes fluorine (F).

    摘要翻译： 提供晶体管，制造晶体管的方法和包括晶体管的电子器件，晶体管包括沟道层，分别接触沟道层的相对端的源极和漏极，对应于沟道层的栅极，栅极绝缘层 在沟道层和栅极之间，以及顺序地设置在栅极绝缘层上的第一钝化层和第二钝化层。 第一钝化层覆盖源极，漏极，栅极，栅极绝缘层和沟道层。 第二钝化层包括氟（F）。

    Transistor and method of manufacturing the same
    3.
    发明申请
    Transistor and method of manufacturing the same 有权
    晶体管及其制造方法

    公开(公告)号：US20090224238A1

    公开(公告)日：2009-09-10

    申请号：US12289252

    申请日：2008-10-23

    申请人： Sun-il Kim ,  Young-soo Park ,  I-hun Song ,  Chang-jung Kim ,  Jae-chul Park ,  Sang-wook Kim

    发明人： Sun-il Kim ,  Young-soo Park ,  I-hun Song ,  Chang-jung Kim ,  Jae-chul Park ,  Sang-wook Kim

    IPC分类号： H01L29/786 ,  H01L21/336

    CPC分类号： H01L29/7869

    摘要： A transistor according to example embodiments may include a channel layer, a source and a drain respectively contacting ends of the channel layer, a gate electrode separated from the channel layer, a gate insulating layer interposed between the channel layer and the gate electrode, and/or an insertion layer that is formed between the channel layer and the gate insulating layer. The insertion layer may have a work function different from that of the channel layer.

    摘要翻译： 根据示例实施例的晶体管可以包括沟道层，分别接触沟道层的端部的源极和漏极，与沟道层分离的栅电极，介于沟道层和栅电极之间的栅极绝缘层和/ 或形成在沟道层和栅极绝缘层之间的插入层。 插入层可以具有与沟道层不同的功函数。

    Stacked memory device and method thereof
    4.
    发明申请
    Stacked memory device and method thereof 有权
    堆叠式存储器件及其方法

    公开(公告)号：US20100091541A1

    公开(公告)日：2010-04-15

    申请号：US12588275

    申请日：2009-10-09

    申请人： Jae-chul Park ,  Kee-won Kwon ,  I-hun Song ,  Young-soo Park ,  Chang-jung Kim ,  Sang-wook Kim ,  Sun-il Kim

    发明人： Jae-chul Park ,  Kee-won Kwon ,  I-hun Song ,  Young-soo Park ,  Chang-jung Kim ,  Sang-wook Kim ,  Sun-il Kim

    IPC分类号： G11C5/02 ,  G11C8/10 ,  G11C11/00 ,  G11C7/00

    CPC分类号： G11C5/02 ,  G11C5/143 ,  G11C7/18 ,  G11C8/12 ,  G11C13/0023 ,  G11C2213/71

    摘要： A stacked memory device includes a plurality of memory layers, where at least one of the plurality of memory layers is stacked on another of the plurality of memory layers and each of the memory layers includes an array of memory cells, a first active circuit unit configured to classify and process address information for at least one of the memory cells as vertical address information and horizontal address information, and at least one second active circuit unit configured to generate a memory selection signal for at least one of the memory cells based on signals processed by the first active circuit unit.

    摘要翻译： 堆叠存储器件包括多个存储器层，其中多个存储器层中的至少一个堆叠在多个存储器层中的另一个上，并且每个存储器层包括存储器单元阵列，第一有源电路单元配置 将至少一个存储器单元的地址信息分类并处理为垂直地址信息和水平地址信息，以及至少一个第二有源电路单元，配置为基于处理的信号为存储器单元中的至少一个生成存储器选择信号 由第一有源电路单元。

    Stacked memory device and method thereof
    6.
    发明授权
    Stacked memory device and method thereof 有权
    堆叠式存储器件及其方法

    公开(公告)号：US08547719B2

    公开(公告)日：2013-10-01

    申请号：US12588275

    申请日：2009-10-09

    申请人： Jae-chul Park ,  Kee-won Kwon ,  I-hun Song ,  Young-soo Park ,  Chang-jung Kim ,  Sang-wook Kim ,  Sun-il Kim

    发明人： Jae-chul Park ,  Kee-won Kwon ,  I-hun Song ,  Young-soo Park ,  Chang-jung Kim ,  Sang-wook Kim ,  Sun-il Kim

    IPC分类号： G11C5/02

    CPC分类号： G11C5/02 ,  G11C5/143 ,  G11C7/18 ,  G11C8/12 ,  G11C13/0023 ,  G11C2213/71

    摘要： A stacked memory device includes a plurality of memory layers, where at least one of the plurality of memory layers is stacked on another of the plurality of memory layers and each of the memory layers includes an array of memory cells, a first active circuit unit configured to classify and process address information for at least one of the memory cells as vertical address information and horizontal address information, and at least one second active circuit unit configured to generate a memory selection signal for at least one of the memory cells based on signals processed by the first active circuit unit.

    摘要翻译： 堆叠存储器件包括多个存储器层，其中多个存储器层中的至少一个堆叠在多个存储器层中的另一个上，并且每个存储器层包括存储器单元阵列，第一有源电路单元配置 将至少一个存储器单元的地址信息分类并处理为垂直地址信息和水平地址信息，以及至少一个第二有源电路单元，配置为基于处理的信号为存储器单元中的至少一个生成存储器选择信号 由第一有源电路单元。

    Transistors, methods of manufacturing a transistor, and electronic devices including a transistor
    7.
    发明授权
    Transistors, methods of manufacturing a transistor, and electronic devices including a transistor 有权
    晶体管，制造晶体管的方法以及包括晶体管的电子器件

    公开(公告)号：US08461597B2

    公开(公告)日：2013-06-11

    申请号：US12805648

    申请日：2010-08-11

    申请人： Sun-il Kim ,  Jae-chul Park ,  Sang-wook Kim ,  Young-soo Park ,  Chang-jung Kim

    发明人： Sun-il Kim ,  Jae-chul Park ,  Sang-wook Kim ,  Young-soo Park ,  Chang-jung Kim

    IPC分类号： H01L29/786

    CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/1248 ,  H01L29/66969 ,  H01L29/78606

    摘要： Transistors, methods of manufacturing a transistor, and electronic devices including a transistor are provided, the transistor includes a channel layer, a source and a drain respectively contacting opposing ends of the channel layer, a gate corresponding to the channel layer, a gate insulating layer between the channel layer and the gate, and a first passivation layer and a second passivation layer sequentially disposed on the gate insulating layer. The first passivation layer covers the source, the drain, the gate, the gate insulating layer and the channel layer. The second passivation layer includes fluorine (F).

    摘要翻译： 提供晶体管，制造晶体管的方法和包括晶体管的电子器件，晶体管包括沟道层，分别接触沟道层的相对端的源极和漏极，对应于沟道层的栅极，栅极绝缘层 在沟道层和栅极之间，以及顺序地设置在栅极绝缘层上的第一钝化层和第二钝化层。 第一钝化层覆盖源极，漏极，栅极，栅极绝缘层和沟道层。 第二钝化层包括氟（F）。

    X-ray detector including oxide semiconductor transistor
    9.
    发明授权
    X-ray detector including oxide semiconductor transistor 有权
    X射线检测器包括氧化物半导体晶体管

    公开(公告)号：US08963096B2

    公开(公告)日：2015-02-24

    申请号：US12926921

    申请日：2010-12-17

    申请人： Sun-il Kim ,  Jae-chul Park ,  Sang-wook Kim ,  Chang-jung Kim

    发明人： Sun-il Kim ,  Jae-chul Park ,  Sang-wook Kim ,  Chang-jung Kim

    IPC分类号： H01L27/146 ,  G01T1/24 ,  H01L31/08

    CPC分类号： H01L31/085 ,  G01T1/24

    摘要： Example embodiments are directed an X-ray detector including an oxide semiconductor transistor. The X-ray detector including the oxide semiconductor transistor includes an oxide semiconductor transistor and a signal storage capacitor in parallel to each other on a substrate. The oxide semiconductor transistor includes a channel formed of an oxide semiconductor material, and a photoconductor. A pixel electrode and a common electrode are formed on opposite surfaces of the photoconductor. The channel includes ZnO, or a compound including ZnO and at least one selected from a group consisting of gallium (Ga), indium (In), hafnium (Hf), and tin (Sn).

    摘要翻译： 示例性实施例涉及包括氧化物半导体晶体管的X射线检测器。 包括氧化物半导体晶体管的X射线检测器包括在基板上彼此平行的氧化物半导体晶体管和信号存储电容器。 氧化物半导体晶体管包括由氧化物半导体材料形成的沟道和感光体。 像素电极和公共电极形成在感光体的相对表面上。 该通道包括ZnO或包含ZnO和选自镓（Ga），铟（In），铪（Hf）和锡（Sn）中的至少一种的化合物。

    Large-scale X-ray detectors and methods of manufacturing the same
    10.
    发明申请
    Large-scale X-ray detectors and methods of manufacturing the same 有权
    大型X射线探测器及其制造方法

    公开(公告)号：US20110309259A1

    公开(公告)日：2011-12-22

    申请号：US12929203

    申请日：2011-01-07

    申请人： Sun-il Kim ,  Jae-chul Park ,  Sang-wook Kim ,  Chang-jung Kim

    发明人： Sun-il Kim ,  Jae-chul Park ,  Sang-wook Kim ,  Chang-jung Kim

    IPC分类号： G01T1/24 ,  H01L31/18

    CPC分类号： G01T1/24 ,  H01L24/24 ,  H01L24/73 ,  H01L27/14609 ,  H01L27/14618 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14676 ,  H01L27/14687 ,  H01L31/085 ,  H01L2224/16225 ,  H01L2924/12043 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/00

    摘要： Large-scale X-ray detectors and methods of manufacturing the same are provided, the large-scale X-ray detectors include a photoconductor layer configured to generate electrical charges according to an incident X-ray using an entire area of the photoconductor layer, a common electrode on an upper surface of the photoconductor layer, a plurality of pixel electrodes, configured to convert the electrical charges into electrical signals, on a lower surface of the photoconductor layer and divided into a plurality of groups, and a plurality of application-specific integrated circuits (ASICs) each corresponding to one of the groups. Each ASIC is configured to process the electrical signals conveyed via the pixel electrodes in the corresponding group. The ASICs process the electrical signals so that seamless image information is collectively generated by the ASICs with respect to the entire area of the photoconductor layer.

    摘要翻译： 提供了大规模X射线检测器及其制造方法，大规模X射线检测器包括：光电导体层，被配置为根据入射的X射线使用光电导体层的整个面积产生电荷; 所述光电导体层的上表面上的公共电极，被配置为将所述电荷转换为电信号的多个像素电极，在所述感光体层的下表面上并分成多个组，以及多个应用特定 集成电路（ASIC），每个对应于该组中的一个。 每个ASIC被配置为处理通过相应组中的像素电极传送的电信号。 ASIC处理电信号，使得ASIC相对于感光体层的整个区域共同地产生无缝图像信息。