公开(公告)号：US06884750B2

公开(公告)日：2005-04-26

申请号：US10297164

申请日：2002-06-26

Applicant: Geon Joong Kim ,  Ho Seong Lee ,  Ho Cheol Kim ,  Jin Won Yun ,  Seong Jin Kim

Inventor： Geon Joong Kim ,  Ho Seong Lee ,  Ho Cheol Kim ,  Jin Won Yun ,  Seong Jin Kim

IPC: C07D301/32 ,  B01J23/75 ,  B01J31/18 ,  B01J31/22 ,  B01J31/26 ,  C07B53/00 ,  C07B61/00 ,  C07C29/10 ,  C07C31/20 ,  C07D303/04 ,  C07D303/12 ,  C07D303/22 ,  C07D303/40 ,  B01J31/00

CPC classification number: B01J31/26 ,  B01J23/75 ,  B01J31/2243 ,  B01J31/403 ,  B01J2231/487 ,  B01J2531/0252 ,  B01J2531/62 ,  B01J2531/64 ,  B01J2531/72 ,  B01J2531/842 ,  B01J2531/845 ,  B01J2531/847

Abstract: The present invention relates to new chiral salen catalysts and methods for the preparation of chiral compounds from racemic epoxides by using new catalyst. More particularly, the present invention is to provide novel chiral salen catalysts and their uses for producing chiral compounds having high optical purity to be used as raw materials for preparing chiral medicines or food additives in a large scale economically, wherein the chirl salen catalyst having a particular molecules structure can be reused continuously without any activating process of used catalysts and cause no or little racemization after the reaction is completed because it maintains its catalytic activity after the reaction process.

Abstract translation: 本发明涉及新的手性盐酸催化剂和通过使用新的催化剂从外消旋环氧化物制备手性化合物的方法。 更具体地说，本发明提供新型手性盐酸催化剂及其用于生产具有高光学纯度的手性化合物的用途，用作经济上大规模制备手性药物或食品添加剂的原料，其中具有 特定的分子结构可以连续使用，而不需要任何活化的催化剂，在反应完成后，由于维持其催化活性，反应结束后不会发生任何或少量的外消旋化。

公开(公告)号：USD490020S1

公开(公告)日：2004-05-18

申请号：US29181873

申请日：2003-05-15

Applicant: Jin Won Kim

Designer： Jin Won Kim

公开(公告)号：USD486838S1

公开(公告)日：2004-02-17

申请号：US29176235

申请日：2003-02-21

Applicant: Woon Kyu Seo ,  Jin Won Kang

Designer： Woon Kyu Seo ,  Jin Won Kang

公开(公告)号：US06559025B2

公开(公告)日：2003-05-06

申请号：US09909510

申请日：2001-07-20

Applicant: Jin-Won Kim

Inventor： Jin-Won Kim

IPC: H01L2120

CPC classification number: H01L28/55 ,  H01L21/31053 ,  H01L27/10852 ,  H01L28/60 ,  H01L28/91

Abstract: A method for manufacturing a capacitor for a semiconductor device, that method including forming a first insulating layer having a contact hole on a semiconductor substrate and forming a diffusion barrier layer in the contact hole, with the diffusion barrier layer electrically connecting to the semiconductor substrate. Forming a second insulating layer and a third insulating layer sequentially on the first insulating layer, and providing a hole in the second insulating layer and third insulating layer to expose the diffusion barrier layer. Forming a conductive layer on the semiconductor substrate such that the conductive layer covers the inner wall of the hole in the second insulating layer and the third insulating layer. Forming an insulating fill layer that fills the remainder of the hole containing the conductive layer. Removing upper portions of the fill layer until the third insulating layer is exposed but a portion of the fill layer remains in the hole. Removing the third insulating layer to expose the second insulating layer and forming a dielectric layer on the semiconductor substrate, such that the dielectric layer covers remaining portions of the fill insulating layer, the second insulating layer, and the conductive layer, and forming a plate node on the dielectric layer.

Abstract translation: 一种制造用于半导体器件的电容器的方法，该方法包括在半导体衬底上形成具有接触孔的第一绝缘层并在接触孔中形成扩散阻挡层，扩散阻挡层与半导体衬底电连接。 在第一绝缘层上依次形成第二绝缘层和第三绝缘层，并且在第二绝缘层和第三绝缘层中设置一个孔以暴露扩散阻挡层。 在半导体衬底上形成导电层，使得导电层覆盖第二绝缘层和第三绝缘层中的孔的内壁。 形成填充包含导电层的孔的剩余部分的绝缘填充层。 去除填充层的上部，直到第三绝缘层露出，但填充层的一部分残留在孔中。 去除所述第三绝缘层以露出所述第二绝缘层并在所述半导体衬底上形成电介质层，使得所述电介质层覆盖所述填充绝缘层，所述第二绝缘层和所述导电层的剩余部分，以及形成板节点 在介电层上。

公开(公告)号：US06373480B1

公开(公告)日：2002-04-16

申请号：US09112241

申请日：1998-07-09

Applicant: Seok-Jin Won

Inventor： Seok-Jin Won

IPC: H04N715

CPC classification number: G11B27/031 ,  G06F17/30265 ,  G06F17/3028 ,  G11B27/28

Abstract: A method for editing images by inserting information therein in an interactive system provided with a mutual communication structure between a client equipment and a server equipment, is provided. The information includes index data, subscriber data, video data and WB data. The edited images including the information inserted are stored in storage media, such as hard disks or optical disks, included in the server equipment employed in the interactive system. And, a method for playing back edited images information in response to a playback instruction for the edited images information requested by an interactive system subscriber by using the interactive system provided with a mutual communication structure between a client equipment and a server equipment is also provided.

Abstract translation: 提供了一种通过在客户端设备和服务器设备之间具有相互通信结构的交互系统中插入信息来编辑图像的方法。 信息包括索引数据，用户数据，视频数据和WB数据。 包括插入的信息的编辑图像被存储在包括在交互式系统中使用的服务器设备中的存储介质（例如硬盘或光盘）中。 还提供了一种用于通过使用在客户端设备和服务器设备之间具有相互通信结构的交互系统来响应于交互式系统用户请求的编辑图像信息的重放指令来播放编辑图像信息的方法。

公开(公告)号：US6043167A

公开(公告)日：2000-03-28

申请号：US947503

申请日：1997-10-10

Applicant: Young Hie Lee ,  Dong Sun Kim ,  Jin Won Park

Inventor： Young Hie Lee ,  Dong Sun Kim ,  Jin Won Park

IPC: C23C16/42 ,  C23C16/30 ,  C23C16/50 ,  C23C16/517 ,  H01L21/31 ,  H01L21/312 ,  H01L21/314 ,  H01L21/316 ,  H01L21/768 ,  H01L21/469

CPC classification number: C23C16/517 ,  C23C16/30 ,  H01L21/3127 ,  H01L21/314 ,  Y10S438/958

Abstract: The method for forming an insulating film having a low dielectric constant, which is suitable for intermetal insulating film applications, by plasma enhanced chemical vapor deposition (PECVD) includes the step of supplying a first source gas containing fluorine and carbon to a dual-frequency, high density plasma reactor. The method also includes the step of supplying a second source gas containing silicon dioxide to the reactor. In this manner a fluorocarbon/silicon dioxide film is formed on a substrate in the reactor.

Abstract translation: 通过等离子体增强化学气相沉积（PECVD）形成适合于金属间绝缘膜应用的具有低介电常数的绝缘膜的方法包括将含有氟和碳的第一源气体供应到双频， 高密度等离子体反应器。 该方法还包括向反应器供应含有二氧化硅的第二源气体的步骤。 以这种方式，在反应器中的基底上形成碳氟化合物/二氧化硅膜。

公开(公告)号：US5272424A

公开(公告)日：1993-12-21

申请号：US950672

申请日：1992-09-25

Applicant: Jin-Won Lee

Inventor： Jin-Won Lee

IPC: H02P6/16 ,  H02P6/14 ,  H02P25/02 ,  G05B11/01

CPC classification number: H02P6/14 ,  H02P25/03

Abstract: A generating device of a phase current instruction value for an A.C. servomotor and the generating method thereof, drives a synchronous A.C. servomotor. A sine wave, namely, a phase current instruction value for commutation of the A.C. servomotor driver can be generated by receiving as an interrupt the detection signal of a commutation sensor which detects the reverse electromotive force of the a motor at the microprocessor. The pulse position of the present since wave is.The pulse position of present sine wave is determined by the interrupt signal of the microprocessor. The motor is driven and controlled by converting by way of a D-A converter to an analog signal the data for generating a sine wave according to the increase or decrease of an encoder pulse.

Abstract translation: 一种用于交流伺服电动机的相电流指令值的生成装置及其生成方法，驱动同步交流伺服电动机。 可以通过接收检测微处理器上的电动机的反向电动势的换向传感器的检测信号作为中断来产生正弦波，即用于换向交流伺服电机驱动器的相电流指令值。 现在的波的脉冲位置是。 当前正弦波的脉冲位置由微处理器的中断信号决定。 根据编码器脉冲的增加或减少，通过D-A转换器将模拟信号转换成用于产生正弦波的数据来驱动和控制电动机。

公开(公告)号：US20230211032A1

公开(公告)日：2023-07-06

申请号：US17928026

申请日：2021-05-26

Applicant: Jin Won Suh

Inventor： Jin Won Suh

IPC: A61L2/24 ,  A61L2/10 ,  D05B11/00 ,  D05B69/18 ,  D05B35/04 ,  D05B27/12 ,  D05B39/00

CPC classification number: A61L2/24 ,  A61L2/10 ,  D05B11/005 ,  D05B69/18 ,  D05B35/04 ,  D05B27/12 ,  D05B39/00 ,  A61L2202/26 ,  A61L2202/122 ,  A61L2202/123 ,  A61L2202/11 ,  A61L2202/14

Abstract: Provided is an automatic mattress sterilization apparatus configured to sterilize a mattress, including a frame extending in one direction and on which the mattress is placed, a sterilization part coupled to an upper portion of the frame and having an inner space through which the mattress passes, and a moving part provided in the frame and configured to move the mattress placed on the frame, and the mattress is moved from one side of the sterilization part to the other side of the sterilization part via the inner space of the sterilization part by the moving part.

公开(公告)号：USD779378S1

公开(公告)日：2017-02-21

申请号：US29536826

申请日：2015-08-19

Applicant: Jin Won Kim ,  Koichi Suga ,  Mario Majdandzic ,  Hiroyuki Hatake

Designer： Jin Won Kim ,  Koichi Suga ,  Mario Majdandzic ,  Hiroyuki Hatake

公开(公告)号：US09379114B2

公开(公告)日：2016-06-28

申请号：US13732353

申请日：2012-12-31

Applicant: Jin-Won Jeong ,  Wonchul Lee

Inventor： Jin-Won Jeong ,  Wonchul Lee

IPC: H01L27/108 ,  H01L27/105

CPC classification number: H01L27/1052 ,  H01L27/10808 ,  H01L27/10852 ,  H01L27/10855 ,  H01L27/10876 ,  H01L27/10885 ,  H01L27/10894

Abstract: Provided are a semiconductor device and a method of fabricating the same. The semiconductor device may include storage node pads disposed adjacent to each other between word lines but spaced apart from each other by an isolation pattern. Accordingly, it is possible to prevent a bridge problem from being caused by a mask misalignment. This enables to improve reliability of the semiconductor device.

Abstract translation: 提供半导体器件及其制造方法。 半导体器件可以包括在字线之间彼此相邻设置但是通过隔离图案彼此间隔开的存储节点焊盘。 因此，可以防止由于掩模未对准而引起桥接问题。 这能够提高半导体器件的可靠性。