Abstract:
Subject matter disclosed herein relates to a method of manufacturing a semiconductor integrated circuit device, and more particularly to a method of fabricating a phase change memory device.
Abstract:
An active driver control circuit for a semiconductor memory apparatus includes an asynchronous decoding unit that can be activated in response to a bank selection signal, when an external command is a read or write command, can generate an enabled read/write enable signal, and when a precharge signal is enabled, disable the enabled read/write enable signal, a synchronous decoding unit that can be activated in response to the bank selection signal, can generate an enabled active enable signal when the external command is an active command, when the external command is a precharge command, can generate the precharge signal, and output the active enable signal and the precharge signal in synchronization with a clock, and an active driver control signal generating unit that can generate an active driver control signal in response to the active enable signal and the read/write enable signal.
Abstract:
A reliability evaluation system comprises a reliability evaluation circuit and a reliability evaluation control circuit. The reliability evaluation circuit includes a stress device array and a stress voltage generating block configured to receive a control voltage, generate stress voltages generated by using two reference voltages, and apply the stress voltages to the unit devices in a stress mode via first I/O lines according to the control voltage. The stress device array includes the unit devices that are matrix-arrayed. Each of the unit devices has a first terminal connected to one of the first I/O lines and a second terminal connected to one of second I/O lines. The reliability evaluation control circuit is configured to generate the control voltage and the two reference voltages, and test reliability of the unit devices by using the first I/O lines and the second I/O lines.
Abstract:
A sub word line driving circuit includes a FX driver which buffers an inverted FX signal to generate a FX signal in response to a control signal, and a sub word line driver which is supplied with the FX signal and receives a main word line signal to drive a sub word line signal.
Abstract:
A reservoir capacitor array circuit capable of allowing an internal voltage to be maintained stably, comprises a plurality of reservoir capacitors, each of the reservoir capacitors including a switch element which is connected between a power source voltage and a prescribed node and switched in response to a test enable signal which is enabled depending on a test mode signal or whether the fuse is cut or not, and a capacitor connected between the node and a ground voltage.
Abstract:
A strobe signal controlling circuit is provided which includes an initial write controller configured to outputs a write pulse signal, which is activated in a write command, in synchronization with a clock signal, a DQS signal outputting unit configured to outputs a write DQS signal by synchronizing an output signal of the initial write controller to the clock signal, a control signal generator configured to generates a control signal in response to the output signal of the initial write controller, and a reset signal generator configured to responds to a reset signal and a DQS enable signal to output a reset signal to the DQS signal outputting module in synchronization with the control signal.
Abstract:
The present invention relates to a composition comprising extracts of Gramineae plant that improves cell viability under hypoxic conditions by inhibiting apoptosis. Thus, the extract of Triticum aestivum L., one of the Gramineae plant, of the present invention, in particular, prevents damage of brain, heart and kidney in animal models of ischemic diseases, and it also improves memory in an animal model of Alzheimer's disease. Therefore, a composition comprising extracts of Gramineae can be used as therapeutic agents or health care foods for preventing and treating ischemic diseases and degenerative brain diseases.
Abstract:
A strobe signal controlling circuit is provided which includes an initial write controller configured to outputs a write pulse signal, which is activated in a write command, in synchronization with a clock signal, a DQS signal outputting unit configured to outputs a write DQS signal by synchronizing an output signal of the initial write controller to the clock signal, a control signal generator configured to generates a control signal in response to the output signal of the initial write controller, and a reset signal generator configured to responds to a reset signal and a DQS enable signal to output a reset signal to the DQS signal outputting module in synchronization with the control signal.
Abstract:
A method of fabricating a contact plug of a semiconductor device is provided, the method includes forming a gate pattern on a substrate, forming a capping pattern to cover an upper surface and sidewalls of the gate pattern, forming an interlayer insulation layer on the substrate such that the interlayer insulation layer exposes an upper surface of the capping pattern, and removing a portion of the capping pattern and the interlayer insulation layer such that the upper surface of the capping pattern is planarized.
Abstract:
In one embodiment of the present disclosure, a composite electrode for a battery is provided. The composite electrode includes silver vanadium oxide present in an amount from about 75 weight percent to about 99 weight percent and polypyrrole present in an amount from about 1 weight percent to about 25 weight percent.