公开(公告)号：US20060131576A1

公开(公告)日：2006-06-22

申请号：US11296921

申请日：2005-12-08

申请人： Cha-Won Koh ,  Sang-Gyun Woo ,  Seok-Hwan Oh ,  Gi-Sung Yeo ,  Hyun-Jae Kang ,  Jang-Ho Shin

发明人： Cha-Won Koh ,  Sang-Gyun Woo ,  Seok-Hwan Oh ,  Gi-Sung Yeo ,  Hyun-Jae Kang ,  Jang-Ho Shin

IPC分类号： H01L23/58

CPC分类号： H01L23/544 ,  G03F7/70633 ,  G03F9/7076 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： There are provided a semiconductor device having an overlay measurement mark, and a method of fabricating the same. The semiconductor device includes a scribe line region disposed on a semiconductor substrate. A first main scale layer having a first group of line and space patterns and a second group of line and space patterns is disposed on the scribe line region. Line-shaped second main scale patterns are disposed on space regions of the first group of the line and space patterns. Line-shaped vernier scale patterns are disposed on space regions of the second group of the line and space patterns. In the method, a first main scale layer having a first group of line and space patterns and a second group of line and space patterns is formed on a semiconductor substrate. Line-shaped second main scale patterns are formed on space regions of the first group of the line and space patterns. Line-shaped vernier scale patterns are formed on space regions of the second group of the line and space patterns.

公开(公告)号：US20060076599A1

公开(公告)日：2006-04-13

申请号：US11246594

申请日：2005-10-06

申请人： Doo-Hoon Goo ,  Han-Ku Cho ,  Joo-Tae Moon ,  Sang-Gyun Woo ,  Gi-Sung Yeo ,  Kyoung-Yun Baek

发明人： Doo-Hoon Goo ,  Han-Ku Cho ,  Joo-Tae Moon ,  Sang-Gyun Woo ,  Gi-Sung Yeo ,  Kyoung-Yun Baek

IPC分类号： H01L21/8238 ,  H01L29/94

CPC分类号： H01L27/11502 ,  H01L27/0207 ,  H01L27/10814 ,  H01L27/10852 ,  H01L27/10855

摘要： A semiconductor memory device may include a substrate having a plurality of active regions and a field isolation layer on the substrate surrounding the active regions of the substrate. Each of the plurality of active regions may have a length in a direction of a first axis and a width in a direction of a second axis, and the length may be greater than the width. The plurality of active regions may be provided in a plurality of columns of active regions in the direction of the second axis, and active regions of adjacent columns may be offset in the direction of the second axis.

公开(公告)号：US20050089776A1

公开(公告)日：2005-04-28

申请号：US10937398

申请日：2004-09-10

申请人： Doo-youl Lee ,  Gi-sung Yeo ,  Han-ku Cho ,  Jung-hyeon Lee

发明人： Doo-youl Lee ,  Gi-sung Yeo ,  Han-ku Cho ,  Jung-hyeon Lee

IPC分类号： G03C5/00 ,  G03F7/40 ,  H01L21/027 ,  H01L21/3205 ,  H01L21/4763 ,  H01L23/544

CPC分类号： H01L22/34 ,  G03F7/40 ,  H01L21/0273

摘要： In a resist reflow measurement key, and method of fabricating a fine pattern of a semiconductor device using the same, the resist reflow measurement key includes a first reflow key including a plurality of first pattern elements each having a first pattern with a first radius of curvature located on a first side of a first center line and a second pattern with a second radius of curvature located on a second side of the first center line, and a second reflow key including a plurality of second pattern elements each having a third pattern with a third radius of curvature located on a first side of a second center line and a fourth pattern with a fourth radius of curvature located on a second side of the second center line, the second reflow key being formed on a same plane of a substrate as the first reflow key.

摘要翻译： 在抗蚀剂回流测量键和使用其的半导体器件的精细图案的制造方法中，抗蚀剂回流测量键包括第一回流键，该第一回流键包括多个第一图案元素，每个第一图案元素具有第一曲率半径 位于第一中心线的第一侧和位于第一中心线的第二侧上的具有第二曲率半径的第二图案，以及第二回流键，包括多个第二图案元素，每个第二图案元素具有第三图案， 位于第二中心线的第一侧上的第三曲率半径和位于第二中心线的第二侧上的具有第四曲率半径的第四图案，第二回流键形成在与第二中心线相同的基板的同一平面上 首先回流钥匙

公开(公告)号：US06654330B2

公开(公告)日：2003-11-25

申请号：US10288492

申请日：2002-11-06

申请人： Woon-Sung Yeo ,  Yeo-Han Yun

发明人： Woon-Sung Yeo ,  Yeo-Han Yun

IPC分类号： G11B700

CPC分类号： G11B27/24 ,  G11B7/00718 ,  G11B7/0079 ,  G11B7/135 ,  G11B7/261 ,  G11B20/1816 ,  G11B20/1883 ,  G11B2220/20 ,  G11B2220/216 ,  G11B2220/218 ,  G11B2220/2545 ,  G11B2220/2562 ,  G11B2220/2575

摘要： This invention provides an information recording medium, and a method and apparatus for writing to/reading from a recording medium in which a starting point of a spare area is variable relative to a starting point of a data area. Information concerning a variable boundary between the data area and the spare area is stored on the recording medium. A method and apparatus for writing/reproducing data to/from the recording medium is also provided. In a preferred embodiment, the recording medium is an optical disc.

摘要翻译： 本发明提供了一种信息记录介质，以及用于从记录介质写入/读取的方法和装置，其中备用区的起始点相对于数据区的起始点是可变的。 关于数据区域和备用区域之间的可变边界的信息被存储在记录介质上。 还提供了用于向/从记录介质写入/再现数据的方法和装置。 在优选实施例中，记录介质是光盘。

公开(公告)号：US06404730B2

公开(公告)日：2002-06-11

申请号：US09291953

申请日：1999-04-15

申请人： Woon-Sung Yeo ,  Hyung-Kyu Kim

发明人： Woon-Sung Yeo ,  Hyung-Kyu Kim

IPC分类号： G11B370

CPC分类号： G11B7/26 ,  B29C65/1406 ,  B29C65/1435 ,  B29C65/1448 ,  B29C65/1467 ,  B29C65/4845 ,  B29C65/521 ,  B29C65/7802 ,  B29C65/7808 ,  B29C65/7811 ,  B29C66/45 ,  B29C66/71 ,  B29C2035/0827 ,  B29L2017/005 ,  G11B7/24003 ,  G11B23/0035 ,  B29K2069/00

摘要： A disk medium and a method of manufacturing the disk medium are disclosed. The disk medium includes a first disk member having a penetrating hole, and a second disk member having a projecting portion, wherein the projecting portion is placed within the penetrating hole of the first disk member to form the optical medium. The method includes forming a first disk member having a penetrating hole, forming a second disk member having a projecting portion, and positioning the projecting portion of the second disk member within the penetrating hole of the first disk member, whereby the first and disk members are combined to form an optical medium.

摘要翻译： 公开了一种盘介质及其制造方法。 盘介质包括具有穿透孔的第一盘构件和具有突出部分的第二盘构件，其中突出部分放置在第一盘构件的穿透孔内以形成光学介质。 该方法包括形成具有贯通孔的第一盘构件，形成具有突出部的第二盘构件，并且将第二盘构件的突出部定位在第一盘构件的贯通孔内，由此第一盘构件和盘构件 组合形成光学介质。