公开(公告)号：US20070048889A1

公开(公告)日：2007-03-01

申请号：US11164331

申请日：2005-11-18

Applicant: Hung-Yi Lin ,  Pin-Ting Liu ,  Tsung-Hsun Tsai

Inventor： Hung-Yi Lin ,  Pin-Ting Liu ,  Tsung-Hsun Tsai

IPC: H01L21/00

CPC classification number: G01L9/0042

Abstract: A wafer is provided, and a circuit layout including a first piezoresistive device layout and a second piezoresistive device layout is formed on the front surface of the wafer. The first piezoresistive device layout includes a plurality of first nodes and the second piezoresistive device layout includes a plurality of second nodes. Subsequently, a dielectric layer is formed on the circuit layout, and the dielectric layer is patterned to expose either the first nodes or the second nodes. Thereafter, a connection pattern is formed on the dielectric layer to electrically connect the first nodes or the second nodes.

Abstract translation: 提供晶片，并且在晶片的前表面上形成包括第一压阻器件布局和第二压阻器件布局的电路布局。 第一压阻器件布局包括多个第一节点，并且第二压阻器件布局包括多个第二节点。 随后，在电路布局上形成电介质层，并对电介质层进行图案化以暴露第一节点或第二节点。 此后，在电介质层上形成连接图案以电连接第一节点或第二节点。

公开(公告)号：US07078495B1

公开(公告)日：2006-07-18

申请号：US09368010

申请日：1999-08-03

Applicant: Kenneth Cornell Kasper ,  Henry Jeong ,  Dariush Davalian ,  Hshiou-ting Liu ,  Paul Levi Miller ,  Denise Leah Williams

Inventor： Kenneth Cornell Kasper ,  Henry Jeong ,  Dariush Davalian ,  Hshiou-ting Liu ,  Paul Levi Miller ,  Denise Leah Williams

IPC: C07K16/44 ,  G01N33/533 ,  G01N33/535 ,  G01N33/546

CPC classification number: A61K51/1093 ,  C07K16/1292 ,  Y10S436/815

Abstract: An IgG1 λ monoclonal antibody to the immunosuppressive drug tacrolimus has improved properties. In particular, this monoclonal antibody, designated 1H6, has reduced cross-reactivity to several tacrolimus metabolites. This antibody is suitable for performance of immunoassays such as homogeneous immunoassays to detect or determine the presence or concentration of tacrolimus in samples such as blood samples. The invention further includes derivatives of tacrolimus derivatized at a non-binding portion of the molecule useful in immunizing antibody-producing animals and in producing such monoclonal antibodies, as well as labeled derivatives of tacrolimus useful as tacrolimus analogues in such assays. The invention further includes immunoassay methods for the detection of tacrolimus and test kits useful in performing such immunoassays.

Abstract translation: 针对免疫抑制药物他克莫司的IgG1λ1λ单克隆抗体具有改善的性质。 特别地，称为1H6的单克隆抗体具有降低的几种他克莫司代谢物的交叉反应性。 该抗体适用于进行免疫测定，例如均匀免疫测定，以检测或确定样品如血液样品中他克莫司的存在或浓度。 本发明还包括在该分子的非结合部分衍生的他克莫司的衍生物，其可用于免疫产生抗体的动物和产生此类单克隆抗体，以及在该测定中用作他克莫司类似物的他克莫司的标记衍生物。 本发明还包括用于检测他克莫司的免疫测定方法和用于进行这种免疫测定的试剂盒。

公开(公告)号：USD520447S1

公开(公告)日：2006-05-09

申请号：US29224087

申请日：2005-02-24

Applicant: Lan-Ting Liu

Designer： Lan-Ting Liu

公开(公告)号：US07037669B2

公开(公告)日：2006-05-02

申请号：US10805813

申请日：2004-03-22

Applicant: Yi Feng Zheng ,  Khaled A. Yamout ,  Donald E. Berger, Jr. ,  Mae W. Hu ,  Hshiou-ting Liu

Inventor： Yi Feng Zheng ,  Khaled A. Yamout ,  Donald E. Berger, Jr. ,  Mae W. Hu ,  Hshiou-ting Liu

IPC: G01N33/53 ,  G01N33/531 ,  C07K16/00 ,  C07K17/02 ,  C07D317/58

CPC classification number: C12N9/0006 ,  G01N33/946 ,  Y10S435/961 ,  Y10S435/975

Abstract: Methods, compositions and kits are disclosed. Enzyme conjugates of Formula I may be employed in assays for the determination of an amphetamine and/or a methamphetamine. Immunogenic conjugates of Formula I may be employed to prepare antibodies for an amphetamine and/or for a methamphetamine for use in assays for the determination of an amphetamine and/or a methamphetamine. The enzyme conjugates may also be employed to screen antibodies for use in such methods.

Abstract translation: 公开了方法，组合物和试剂盒。 式I的酶缀合物可以用于测定苯丙胺和/或甲基苯丙胺的测定中。 式I的免疫原性缀合物可用于制备安非他明和/或甲基苯丙胺的抗体，用于测定苯丙胺和/或甲基苯丙胺。 酶缀合物也可用于筛选用于这些方法的抗体。

公开(公告)号：USD519099S1

公开(公告)日：2006-04-18

申请号：US29207169

申请日：2004-06-09

Applicant: Lan-Ting Liu ,  Craig F Siddoway

Designer： Lan-Ting Liu ,  Craig F Siddoway

公开(公告)号：US06794694B2

公开(公告)日：2004-09-21

申请号：US09742314

申请日：2000-12-21

Applicant: Philip W Diodato ,  Chun-Ting Liu ,  Ruichen Liu

Inventor： Philip W Diodato ,  Chun-Ting Liu ,  Ruichen Liu

IPC: H01L2976

CPC classification number: H01L27/10852 ,  H01L21/76838 ,  H01L23/5223 ,  H01L27/10894 ,  H01L28/55 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An integrated circuit includes a semiconductor substrate with semiconductor devices formed therein and thereon, a first wiring layer located over the substrate, a second wiring layer located on the first wiring layer, and a capacitor. The capacitor has metal-based charge-storage electrodes that extend through the second wiring layer and at least part of the first wiring layer. The wiring layers have interconnect wire embedded therein.

Abstract translation: 集成电路包括其上形成有半导体器件的半导体衬底及其上，位于衬底上的第一布线层，位于第一布线层上的第二布线层和电容器。 电容器具有延伸穿过第二布线层和至少部分第一布线层的金属基电荷存储电极。 布线层具有嵌入其中的互连线。

公开(公告)号：US6085400A

公开(公告)日：2000-07-11

申请号：US383360

申请日：1999-08-26

Applicant: Yang-Ting Liu

Inventor： Yang-Ting Liu

IPC: B21J15/04 ,  B21J15/34

CPC classification number: B21J15/386 ,  B21J15/043 ,  Y10T29/5373

Abstract: A riveting pliers, which includes a casing having a rear end terminating in a hand grip, a sleeve mounted in the casing, a handle pivoted to the casing, a pressure bar pivoted to the casing, and links coupled between the pressure bar and the handle for enabling the pressure bar to be turned by the handle to lift the sleeve in the casing in achieving a riveting operation, wherein the pressure bar has a middle part pivoted to the inside of the casing by a pivot, a forked front end clamped on two recessed portions at the periphery of the sleeve at two opposite sides, a forked rear end mounted with a transverse pivot and a roller on the transverse pivot; the handle has a downward sloping flange stopped at the roller at the pressure bar for imparting a pressure to the pressure bar to lift the sleeve upon each operation of the handle.

Abstract translation: 一种铆接钳子，其包括具有终止于手柄的后端的壳体，安装在壳体中的套筒，枢转到壳体的手柄，枢转到壳体的压力杆，以及联接在压力杆和手柄之间的连杆 为了使压力杆能够通过手柄转动以提升套管中的套筒以实现铆接操作，其中压杆具有通过枢轴枢转到壳体内部的中间部分，夹紧在两个上的叉形前端 在两个相对侧的套筒的周边处的凹部，在横向枢轴上安装有横向枢轴和辊的叉形后端; 手柄具有向下倾斜的凸缘，其在压杆处停止在辊处，用于在每个手柄的操作时向压力杆施加压力以提升套筒。

公开(公告)号：US6054722A

公开(公告)日：2000-04-25

申请号：US848141

申请日：1997-04-28

Applicant: Kua-Hua Lee ,  Chun-Ting Liu

Inventor： Kua-Hua Lee ,  Chun-Ting Liu

IPC: H01L21/8238 ,  H01L27/092 ,  H01L27/11 ,  H01L29/786 ,  H01L27/108 ,  H01L27/01

CPC classification number: H01L27/1108 ,  Y10S257/903 ,  Y10S257/904

Abstract: A complementary device consisting of a PMOS TFT transistor and an NMOS FET transistor uses a conducting layer to shunt drain regions of the transistors to eliminate any detrimental diode or p-n junction effects. The use of the conducting layer significantly improves the current drive capabilities of the PMOS TFT when the complementary device is used to design SRAM cells with NMOS pull-down transistors.

Abstract translation: 由PMOS TFT晶体管和NMOS FET晶体管构成的互补器件使用导电层来分流晶体管的漏极区以消除任何有害的二极管或p-n结效应。 当使用互补器件来设计具有NMOS下拉晶体管的SRAM单元时，使用导电层可显着提高PMOS TFT的电流驱动能力。

公开(公告)号：US5956618A

公开(公告)日：1999-09-21

申请号：US828155

申请日：1997-03-27

Applicant: Chun-Ting Liu ,  Kuo-Hua Lee ,  Ruichen Liu

Inventor： Chun-Ting Liu ,  Kuo-Hua Lee ,  Ruichen Liu

IPC: H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L21/027 ,  H01L21/304

CPC classification number: H01L21/76838 ,  Y10S438/942

Abstract: A method for fabricating a multi-level integrated circuit is disclosed which utilizes a grid pattern from which portions corresponding to the metal layer are selectively removed to form a mask which is subsequently used to deposit dummy features in the open areas between metal lines, thereby to allow the deposition of a substantially planar dielectric surface over the metal layers and dummy features.

Abstract translation: 公开了一种用于制造多电平集成电路的方法，其利用网格图案，从其中选择性地去除与金属层相对应的部分以形成掩模，其随后用于在金属线之间的开放区域中沉积虚拟特征，从而 允许在金属层和虚拟特征上沉积基本上平面的电介质表面。

公开(公告)号：US5656822A

公开(公告)日：1997-08-12

申请号：US520087

申请日：1995-08-28

Applicant: Kuo-Hua Lee ,  Chun-Ting Liu

Inventor： Kuo-Hua Lee ,  Chun-Ting Liu

IPC: H01L29/423 ,  H01L29/786 ,  H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20

CPC classification number: H01L29/78696 ,  H01L29/42384

Abstract: The longitudinal edges of the overlying channel layer of a thin-film transistor are substantially aligned with the longitudinal edges of the underlying polysilicon gate layer. As a result of this line-on-line arrangement of the channel and gate layers, integration area is minimized so that optimum integration density is achieved. Source-to-drain on current is increased as the result of the increased channel width gained from the sidewall section of the polysilicon gate, which may occur as a result of the permissible lateral extension of the body (channel) layer over one longitudinal edge of the channel gate layer due to a misalignment in lithography or processing delta.

Abstract translation: 薄膜晶体管的上覆通道层的纵向边缘基本上与下面的多晶硅栅极层的纵向边缘对准。 作为通道和栅极层的在线布置的结果，集成区域被最小化，从而实现最佳的集成密度。 由于从多晶硅栅极的侧壁部分增加的沟道宽度的结果，源极到漏极电流增加，这可能由于主体（沟道）层在一个纵向边缘上的允许的横向延伸 由于光刻或处理三角形中的未对准而导致的沟道栅极层。