公开(公告)号：US10720331B2

公开(公告)日：2020-07-21

申请号：US16245006

申请日：2019-01-10

Applicant: ASM IP Holding B.V.

Inventor： Petri Raisanen ,  Michael Eugene Givens

IPC: H01L21/28 ,  C23C16/455 ,  H01L29/49 ,  H01L21/8238 ,  C23C16/34 ,  H01L29/78

Abstract: Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures are provided. In some embodiments, methods may include contacting a substrate with a first vapor phase reactant comprising a transition metal precursor and contacting the substrate with a second vapor phase reactant comprising an alkyl-hydrazine precursor. In some embodiments, related semiconductor device structures may include a PMOS transistor gate structure, the PMOS transistor gate structure including a transition metal nitride film and a gate dielectric between the transition nitride film and a semiconductor body. The transition metal nitride film includes a predominant (200) crystallographic orientation.

公开(公告)号：US10607895B2

公开(公告)日：2020-03-31

申请号：US15707786

申请日：2017-09-18

Applicant: ASM IP Holding B.V.

Inventor： Qi Xie ,  Chiyu Zhu ,  Kiran Shrestha ,  Pauline Calka ,  Oreste Madia ,  Jan Willem Maes ,  Michael Eugene Givens

IPC: H01L21/8238 ,  H01L29/49 ,  H01L29/51 ,  H01L27/092

Abstract: A method for forming a semiconductor device structure is disclosure. The method may include, depositing an NMOS gate dielectric and a PMOS gate dielectric over a semiconductor substrate, depositing a first work function metal over the NMOS gate dielectric and over the PMOS gate dielectric, removing the first work function metal over the PMOS gate dielectric, and depositing a second work function metal over the NMOS gate dielectric and over the PMOS gate dielectric. Semiconductor device structures including desired metal gate electrodes deposited by the methods of the disclosure are also disclosed.

公开(公告)号：US10410943B2

公开(公告)日：2019-09-10

申请号：US15673278

申请日：2017-08-09

Applicant: ASM IP Holding B.V.

Inventor： Xiaoqiang Jiang ,  Fu Tang ,  Qi Xie ,  Pauline Calka ,  Sung-Hoon Jung ,  Michael Eugene Givens

IPC: H01L21/02 ,  H01L23/31 ,  H01L23/29 ,  C23C16/455 ,  H01L21/67 ,  C23C16/30 ,  H01L21/306 ,  H01L29/66

Abstract: A system and a method for passivating a surface of a semiconductor. The method includes providing the surface of the semiconductor to a reaction chamber of a reactor, exposing the surface of the semiconductor to a gas-phase metal containing precursor in the reaction chamber and exposing the surface of the semiconductor to a gas-phase chalcogenide containing precursor. The methods also include passivating the surface of the semiconductor using the gas-phase metal containing precursor and the gas-phase chalcogenide containing precursor to form a passivated surface. The system for passivating a surface of a semiconductor may include a reactor, a metal containing precursor source fluidly coupled to the reactor, and a chalcogenide containing precursor source fluidly couple to the reactor, wherein the metal containing precursor source provides a gas-phase metal containing precursor to a reaction chamber of the reactor, and wherein the chalcogenide containing precursor source provides a gas-phase chalcogenide containing precursor to a reaction chamber of the reactor.

公开(公告)号：US20190164763A1

公开(公告)日：2019-05-30

申请号：US16245006

申请日：2019-01-10

Applicant: ASM IP Holding B.V.

Inventor： Petri Raisanen ,  Michael Eugene Givens

IPC: H01L21/28 ,  H01L29/49 ,  C23C16/455 ,  C23C16/34 ,  H01L21/8238 ,  H01L29/78

CPC classification number: H01L21/28088 ,  C23C16/34 ,  C23C16/45527 ,  C23C16/45553 ,  H01L21/823828 ,  H01L29/4966 ,  H01L29/78

Abstract: Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures are provided. In some embodiments, methods may include contacting a substrate with a first vapor phase reactant comprising a transition metal precursor and contacting the substrate with a second vapor phase reactant comprising an alkyl-hydrazine precursor. In some embodiments, related semiconductor device structures may include a PMOS transistor gate structure, the PMOS transistor gate structure including a transition metal nitride film and a gate dielectric between the transition nitride film and a semiconductor body. The transition metal nitride film includes a predominant (200) crystallographic orientation.

公开(公告)号：US20170316933A1

公开(公告)日：2017-11-02

申请号：US15144481

申请日：2016-05-02

Applicant: ASM IP Holding B.V.

Inventor： Qi Xie ,  David de Roest ,  Jacob Woodruff ,  Michael Eugene Givens ,  Jan Willem Maes ,  Timothee Blanquart

IPC: H01L21/02 ,  H01L29/36 ,  H01L21/265 ,  H01L29/417

CPC classification number: H01L21/0262 ,  H01L21/02532 ,  H01L21/02658 ,  H01L21/02694 ,  H01L21/2254 ,  H01L21/26506 ,  H01L29/36 ,  H01L29/41725

Abstract: A method for improving source/drain performance through conformal solid state doping and its resulting device are disclosed. Specifically, the doping takes place through an atomic layer deposition of a dopant layer. Embodiments of the invention may allow for an increased doping layer, improved conformality, and reduced defect formation, in comparison to alternate doping methods, such as ion implantation or epitaxial doping.

公开(公告)号：US20170110313A1

公开(公告)日：2017-04-20

申请号：US15286503

申请日：2016-10-05

Applicant: ASM IP Holding B.V.

Inventor： Fu Tang ,  Xiaoqiang Jiang ,  Qi Xie ,  Michael Eugene Givens ,  Jan Willem Maes ,  Jerry Chen

IPC: H01L21/02 ,  H01L29/78 ,  H01L29/20 ,  H01L29/51 ,  C23C16/455 ,  H01L29/16

CPC classification number: H01L21/0228 ,  C23C16/401 ,  C23C16/45529 ,  C23C16/45544 ,  H01L21/02156 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/28194 ,  H01L29/16 ,  H01L29/20 ,  H01L29/517 ,  H01L29/78

Abstract: A method for depositing a thin film onto a substrate is disclosed. In particular, the method forms a transitional metal silicate onto the substrate. The transitional metal silicate may comprise a lanthanum silicate or yttrium silicate, for example. The transitional metal silicate indicates reliability as well as good electrical characteristics for use in a gate dielectric material.

公开(公告)号：US20160372365A1

公开(公告)日：2016-12-22

申请号：US14741249

申请日：2015-06-16

Applicant: ASM IP Holding B.V.

Inventor： Fu Tang ,  Michael Eugene Givens ,  Jacob Huffman Woodruff ,  Qi Xie ,  Jan Willem Maes

IPC: H01L21/768 ,  H01L21/02

CPC classification number: H01L21/76829 ,  C23C16/02 ,  C23C16/045 ,  C23C16/305 ,  C23C16/45553 ,  H01L21/02175 ,  H01L21/02186 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/285 ,  H01L21/76814 ,  H01L21/76831 ,  H01L21/76895 ,  H01L23/485 ,  H01L29/42364 ,  H01L29/517 ,  H01L29/78

Abstract: In some aspects, methods of forming a metal chalcogenide thin film are provided. According to some methods, a metal chalcogenide thin film is deposited on a substrate in a reaction space in a cyclical deposition process where at least one cycle includes alternately and sequentially contacting the substrate with a first vapor-phase metal reactant and a second vapor-phase chalcogen reactant. In some aspects, methods of forming three-dimensional structure on a substrate surface are provided. In some embodiments, the method includes forming a metal chalcogenide dielectric layer between a substrate and a conductive layer. In some embodiments the method includes forming an MIS-type contact structure including a metal chalcogenide dielectric layer.

Abstract translation: 在一些方面，提供了形成金属硫族化物薄膜的方法。 根据一些方法，金属硫族化物薄膜在循环沉积过程中在反应空间中沉积在基底上，其中至少一个循环包括交替地和顺序地接触基底与第一气相金属反应物和第二气相 硫属反应物。 在一些方面，提供了在基板表面上形成三维结构的方法。 在一些实施例中，该方法包括在衬底和导电层之间形成金属硫属元素化物介质层。 在一些实施例中，该方法包括形成包括金属硫族化物介电层的MIS型接触结构。