公开(公告)号：US20060155413A1

公开(公告)日：2006-07-13

申请号：US11370009

申请日：2006-03-08

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Masaaki Hiroki ,  Koichiro Tanaka ,  Aiko Shiga ,  Mai Akiba

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Masaaki Hiroki ,  Koichiro Tanaka ,  Aiko Shiga ,  Mai Akiba

IPC分类号： G06F19/00

CPC分类号： H01L21/02678 ,  B23K26/04 ,  B23K26/0604 ,  B23K26/064 ,  B23K26/0648 ,  B23K26/0665 ,  B23K26/12 ,  B23K26/1224 ,  B23K26/123 ,  B23K26/127 ,  H01L21/02683 ,  H01L21/2026

摘要： Providing a semiconductor fabricating apparatus using a laser crystallization technique for enhancing the processing efficiency for substrate and for increasing the mobility of a semiconductor film. The semiconductor fabricating apparatus of multi-chamber system includes a film formation equipment for forming a semiconductor film, and a laser irradiation equipment. The laser irradiation equipment includes first means for controlling a laser irradiation position relative to an irradiation object, second means (laser oscillator) for emitting laser light, third means (optical system) for processing or converging the laser light, and fourth means for controlling the oscillation of the second means and for controlling the first means in a manner that a beam spot of the laser light processed by the third means may cover a place determined based on data on a mask configuration (pattern information).

公开(公告)号：US20080050921A1

公开(公告)日：2008-02-28

申请号：US11841361

申请日：2007-08-20

申请人： Hidekazu Miyairi ,  Koichiro Tanaka ,  Hironobu Shoji ,  Shunpei Yamazaki

发明人： Hidekazu Miyairi ,  Koichiro Tanaka ,  Hironobu Shoji ,  Shunpei Yamazaki

IPC分类号： H01L21/311

CPC分类号： H01L27/1288 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/32139 ,  H01L27/1214 ,  H01L29/66765 ,  H01L29/78633

摘要： A first layer is formed over a substrate, a light absorbing layer is formed over the first layer, and a layer having a light-transmitting property is formed over the light absorbing layer. The light absorbing layer is selectively irradiated with a laser beam via the layer having a light-transmitting property. When the light absorbing layer absorbs energy of the laser beam, due to emission of gas that is within the light absorbing layer, or sublimation, evaporation, or the like of the light absorbing layer, a part of the light absorbing layer and a part of the layer having a light-transmitting property in contact with the light absorbing layer are removed. By using the remaining part of the layer having a light-transmitting property or the remaining part of the light absorbing layer as a mask and etching the first layer, the first layer can be processed into a desired shape.

摘要翻译： 第一层形成在衬底上，在第一层上形成光吸收层，并且在光吸收层上形成具有透光性的层。 通过具有透光性的层，用激光束选择性地照射光吸收层。 当光吸收层吸收激光束的能量时，由于光吸收层内的气体的发射或者光吸收层的升华，蒸发等，一部分光吸收层和 除去与光吸收层接触的透光性的层。 通过使用具有透光性的层的剩余部分或光吸收层的剩余部分作为掩模，并蚀刻第一层，可以将第一层加工成所需的形状。

公开(公告)号：US20050037552A1

公开(公告)日：2005-02-17

申请号：US10820781

申请日：2004-04-09

申请人： Shunpei Yamazaki ,  Koichiro Tanaka ,  Hidekazu Miyairi

发明人： Shunpei Yamazaki ,  Koichiro Tanaka ,  Hidekazu Miyairi

IPC分类号： B23K26/08 ,  H01L21/20 ,  H01L21/77 ,  H01L21/84 ,  H01L21/00

CPC分类号： H01L21/02683 ,  B23K26/082 ,  B23K26/0821 ,  H01L21/02691 ,  H01L21/2026 ,  H01L27/1285

摘要： The speed of the laser scanned by the scanning means such as a galvanometer mirror or a polygon mirror is not constant in the center portion and in the end portion of the scanning width. As a result, the object, for example an amorphous semiconductor film, is irradiated with the excessive energy and therefore there is a risk that the amorphous semiconductor film is peeled. In the present invention, in the case where the laser spot of the energy beam output continuously on the irradiated object is scanned by moving it back and forth with the use of the scanning means or the like, the beam is irradiated to the outside of the element-forming region when the scanning speed of the spot is not the predetermined value, for example when the speed is not constant, and accelerates, decelerates, or is zero, for example in the positions where the scanning direction changes, or where the scanning starts or ends.

摘要翻译： 由扫描装置如电流计镜或多面镜扫描的激光的速度在扫描宽度的中央部分和末端部分中不是恒定的。 结果，物体（例如非晶半导体膜）被过量的能量照射，因此存在非晶半导体膜剥离的风险。 在本发明中，在通过使用扫描装置等来前后移动在被照射物体上连续输出的能量束的激光光斑进行扫描的情况下，将光束照射到 当点的扫描速度不是预定值时，例如当速度不恒定并且例如在扫描方向改变的位置加速，减速或为零时，或者扫描 开始或结束

公开(公告)号：US07892952B2

公开(公告)日：2011-02-22

申请号：US11185737

申请日：2005-07-21

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Masaaki Hiroki ,  Koichiro Tanaka ,  Aiko Shiga ,  Mai Akiba

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Masaaki Hiroki ,  Koichiro Tanaka ,  Aiko Shiga ,  Mai Akiba

IPC分类号： H01L21/477

CPC分类号： H01L21/02683 ,  B23K26/0604 ,  B23K26/0608 ,  B23K26/082 ,  B23K2101/007 ,  H01L21/02691 ,  H01L21/2026 ,  H01L27/1285

摘要： Provided are a laser apparatus of continuous oscillation that is capable of enhancing the efficiency of substrate processing, a laser irradiation method, and a manufacturing method for a semiconductor device using the laser apparatus. A portion of a semiconductor film that should be left on a substrate after patterning is grasped in accordance with a mask. Then, a portion to be scanned with a laser light is determined so that it is possible to crystallize at least the portion to be obtained through the patterning. Also, a beam spot is made to strike the portion to be scanned. As a result, the semiconductor film is partially crystallized. That is, with the present invention, the laser light is not scanned and irradiated onto the entire surface of a semiconductor film but is scanned so that at least an indispensable portion is crystallized. With the construction described above, it becomes possible to save a time taken to irradiate the laser light onto a portion that will be removed through the patterning after the crystallization of the semiconductor film.

摘要翻译： 提供能够提高基板处理效率的连续振荡的激光装置，激光照射方法以及使用该激光装置的半导体装置的制造方法。 根据掩模掌握在图案化之后留在基板上的半导体膜的一部分。 然后，确定要用激光扫描的部分，使得可以通过图案化至少使待获得的部分结晶。 此外，使光束点撞击要扫描的部分。 结果，半导体膜部分结晶。 也就是说，利用本发明，激光不被扫描并照射到半导体膜的整个表面上，而是被扫描，使得至少不可缺少的部分结晶化。 利用上述结构，可以将半导体膜结晶后的激光照射到通过图案化去除的部分上所花费的时间。

公开(公告)号：US08043969B2

公开(公告)日：2011-10-25

申请号：US12827347

申请日：2010-06-30

申请人： Hidekazu Miyairi ,  Koichiro Tanaka ,  Hironobu Shoji ,  Shunpei Yamazaki

发明人： Hidekazu Miyairi ,  Koichiro Tanaka ,  Hironobu Shoji ,  Shunpei Yamazaki

IPC分类号： H01L21/461

CPC分类号： H01L27/1288 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/32139 ,  H01L27/1214 ,  H01L29/66765 ,  H01L29/78633

摘要： A first layer is formed over a substrate, a light absorbing layer is formed over the first layer, and a layer having a light-transmitting property is formed over the light absorbing layer. The light absorbing layer is selectively irradiated with a laser beam via the layer having a light-transmitting property. When the light absorbing layer absorbs energy of the laser beam, due to emission of gas that is within the light absorbing layer, or sublimation, evaporation, or the like of the light absorbing layer, a part of the light absorbing layer and a part of the layer having a light-transmitting property in contact with the light absorbing layer are removed. By using the remaining part of the layer having a light-transmitting property or the remaining part of the light absorbing layer as a mask and etching the first layer, the first layer can be processed into a desired shape.

摘要翻译： 第一层形成在衬底上，在第一层上形成光吸收层，并且在光吸收层上形成具有透光性的层。 通过具有透光性的层，用激光束选择性地照射光吸收层。 当光吸收层吸收激光束的能量时，由于光吸收层内的气体的发射或者光吸收层的升华，蒸发等，一部分光吸收层和 除去与光吸收层接触的透光性的层。 通过使用具有透光性的层的剩余部分或光吸收层的剩余部分作为掩模，并蚀刻第一层，可以将第一层加工成所需的形状。

公开(公告)号：US20100267179A1

公开(公告)日：2010-10-21

申请号：US12827347

申请日：2010-06-30

申请人： Hidekazu Miyairi ,  Koichiro Tanaka ,  Hironobu Shoji ,  Shunpei Yamazaki

发明人： Hidekazu Miyairi ,  Koichiro Tanaka ,  Hironobu Shoji ,  Shunpei Yamazaki

IPC分类号： H01L33/00

CPC分类号： H01L27/1288 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/32139 ,  H01L27/1214 ,  H01L29/66765 ,  H01L29/78633

摘要： A first layer is formed over a substrate, a light absorbing layer is formed over the first layer, and a layer having a light-transmitting property is formed over the light absorbing layer. The light absorbing layer is selectively irradiated with a laser beam via the layer having a light-transmitting property. When the light absorbing layer absorbs energy of the laser beam, due to emission of gas that is within the light absorbing layer, or sublimation, evaporation, or the like of the light absorbing layer, a part of the light absorbing layer and a part of the layer having a light-transmitting property in contact with the light absorbing layer are removed. By using the remaining part of the layer having a light-transmitting property or the remaining part of the light absorbing layer as a mask and etching the first layer, the first layer can be processed into a desired shape.

摘要翻译： 第一层形成在衬底上，在第一层上形成光吸收层，并且在光吸收层上形成具有透光性的层。 通过具有透光性的层，用激光束选择性地照射光吸收层。 当光吸收层吸收激光束的能量时，由于光吸收层内的气体的发射或者光吸收层的升华，蒸发等，一部分光吸收层和 除去与光吸收层接触的透光性的层。 通过使用具有透光性的层的剩余部分或光吸收层的剩余部分作为掩模，并蚀刻第一层，可以将第一层加工成所需的形状。

公开(公告)号：US20070196968A1

公开(公告)日：2007-08-23

申请号：US11785966

申请日：2007-04-23

申请人： Shunpei Yamazaki ,  Koichiro Tanaka ,  Hidekazu Miyairi

发明人： Shunpei Yamazaki ,  Koichiro Tanaka ,  Hidekazu Miyairi

IPC分类号： H01L21/84

CPC分类号： H01L21/02683 ,  B23K26/082 ,  B23K26/0821 ,  H01L21/02691 ,  H01L21/2026 ,  H01L27/1285

摘要： The speed of the laser scanned by the scanning means such as a galvanometer mirror or a polygon mirror is not constant in the center portion and in the end portion of the scanning width. As a result, the object, for example an amorphous semiconductor film, is irradiated with the excessive energy and therefore there is a risk that the amorphous semiconductor film is peeled. In the present invention, in the case where the laser spot of the energy beam output continuously on the irradiated object is scanned by moving it back and forth with the use of the scanning means or the like, the beam is irradiated to the outside of the element-forming region when the scanning speed of the spot is not the predetermined value, for example when the speed is not constant, and accelerates, decelerates, or is zero, for example in the positions where the scanning direction changes, or where the scanning starts or ends.

摘要翻译： 由扫描装置如电流计镜或多面镜扫描的激光的速度在扫描宽度的中心部分和端部中不是恒定的。 结果，物体（例如非晶半导体膜）被过量的能量照射，因此存在非晶半导体膜剥离的风险。 在本发明中，在通过使用扫描装置等来前后移动在被照射物体上连续输出的能量束的激光光斑进行扫描的情况下，将光束照射到 当点的扫描速度不是预定值时，例如当速度不恒定并且例如在扫描方向改变的位置加速，减速或为零时，或者扫描 开始或结束

公开(公告)号：US07220627B2

公开(公告)日：2007-05-22

申请号：US10820781

申请日：2004-04-09

申请人： Shunpei Yamazaki ,  Koichiro Tanaka ,  Hidekazu Miyairi

发明人： Shunpei Yamazaki ,  Koichiro Tanaka ,  Hidekazu Miyairi

IPC分类号： H01L21/00

CPC分类号： H01L21/02683 ,  B23K26/082 ,  B23K26/0821 ,  H01L21/02691 ,  H01L21/2026 ,  H01L27/1285

摘要： The speed of the laser scanned by the scanning means such as a galvanometer mirror or a polygon mirror is not constant in the center portion and in the end portion of the scanning width. As a result, the object, for example an amorphous semiconductor film, is irradiated with the excessive energy and therefore there is a risk that the amorphous semiconductor film is peeled. In the present invention, in the case where the laser spot of the energy beam output continuously on the irradiated object is scanned by moving it back and forth with the use of the scanning means or the like, the beam is irradiated to the outside of the element-forming region when the scanning speed of the spot is not the predetermined value, for example when the speed is not constant, and accelerates, decelerates, or is zero, for example in the positions where the scanning direction changes, or where the scanning starts or ends.

摘要翻译： 由扫描装置如电流计镜或多面镜扫描的激光的速度在扫描宽度的中央部分和末端部分中不是恒定的。 结果，物体（例如非晶半导体膜）被过量的能量照射，因此存在非晶半导体膜剥离的风险。 在本发明中，在通过使用扫描装置等来前后移动在被照射物体上连续输出的能量束的激光光斑进行扫描的情况下，将光束照射到 当点的扫描速度不是预定值时，例如当速度不恒定并且例如在扫描方向改变的位置加速，减速或为零时，或者扫描 开始或结束

公开(公告)号：US07439115B2

公开(公告)日：2008-10-21

申请号：US11370009

申请日：2006-03-08

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Masaaki Hiroki ,  Koichiro Tanaka ,  Aiko Shiga ,  Mai Akiba

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Masaaki Hiroki ,  Koichiro Tanaka ,  Aiko Shiga ,  Mai Akiba

IPC分类号： H01L21/84

CPC分类号： H01L21/02678 ,  B23K26/04 ,  B23K26/0604 ,  B23K26/064 ,  B23K26/0648 ,  B23K26/0665 ,  B23K26/12 ,  B23K26/1224 ,  B23K26/123 ,  B23K26/127 ,  H01L21/02683 ,  H01L21/2026

摘要： Providing a semiconductor fabricating apparatus using a laser crystallization technique for enhancing the processing efficiency for substrate and for increasing the mobility of a semiconductor film. The semiconductor fabricating apparatus of multi-chamber system includes a film formation equipment for forming a semiconductor film, and a laser irradiation equipment. The laser irradiation equipment includes first means for controlling a laser irradiation position relative to an irradiation object, second means (laser oscillator) for emitting laser light, third means (optical system) for processing or converging the laser light, and fourth means for controlling the oscillation of the second means and for controlling the first means in a manner that a beam spot of the laser light processed by the third means may cover a place determined based on data on a mask configuration (pattern information).

摘要翻译： 提供一种使用激光结晶技术的半导体制造装置，用于提高衬底的处理效率和增加半导体膜的迁移率。 多室系统的半导体制造装置包括用于形成半导体膜的成膜设备和激光照射设备。 激光照射设备包括用于控制相对于照射物体的激光照射位置的第一装置，用于发射激光的第二装置（激光振荡器），用于处理或会聚激光的第三装置（光学系统），以及用于控制 第二装置的振荡和第一装置的控制，使得由第三装置处理的激光束的光斑可以覆盖基于掩模配置（图案信息）上的数据确定的位置。

公开(公告)号：US07037809B2

公开(公告)日：2006-05-02

申请号：US10739105

申请日：2003-12-19

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Masaaki Hiroki ,  Koichiro Tanaka ,  Aiko Shiga ,  Mai Akiba

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Masaaki Hiroki ,  Koichiro Tanaka ,  Aiko Shiga ,  Mai Akiba

IPC分类号： H01L21/20 ,  H01L21/26

CPC分类号： H01L21/02683 ,  B23K26/0604 ,  B23K26/0608 ,  B23K26/082 ,  B23K2101/007 ,  H01L21/02691 ,  H01L21/2026 ,  H01L27/1285

摘要： The present invention provides a semiconductor device manufacturing method where a beam spot is formed by having respective beam spots of a plurality of laser lights overlap each other on a semiconductor film using an optical system. Crystallinity, in a region determined by pattern information, is enhanced by scanning the beam spot to form an island-like semiconductor film based on the pattern information.

摘要翻译： 本发明提供一种半导体器件制造方法，其中通过使用光学系统在半导体膜上使多个激光的各个光束点彼此重叠而形成束斑。 通过图案信息确定的区域中的结晶度通过基于图案信息扫描束斑以形成岛状半导体膜来增强。