公开(公告)号：US07749907B2

公开(公告)日：2010-07-06

申请号：US11841361

申请日：2007-08-20

申请人： Hidekazu Miyairi ,  Koichiro Tanaka ,  Hironobu Shoji ,  Shunpei Yamazaki

发明人： Hidekazu Miyairi ,  Koichiro Tanaka ,  Hironobu Shoji ,  Shunpei Yamazaki

IPC分类号： H01L21/461

CPC分类号： H01L27/1288 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/32139 ,  H01L27/1214 ,  H01L29/66765 ,  H01L29/78633

摘要： A first layer is formed over a substrate, a light absorbing layer is formed over the first layer, and a layer having a light-transmitting property is formed over the light absorbing layer. The light absorbing layer is selectively irradiated with a laser beam via the layer having a light-transmitting property. When the light absorbing layer absorbs energy of the laser beam, due to emission of gas that is within the light absorbing layer, or sublimation, evaporation, or the like of the light absorbing layer, a part of the light absorbing layer and a part of the layer having a light-transmitting property in contact with the light absorbing layer are removed. By using the remaining part of the layer having a light-transmitting property or the remaining part of the light absorbing layer as a mask and etching the first layer, the first layer can be processed into a desired shape.

摘要翻译： 第一层形成在衬底上，在第一层上形成光吸收层，并且在光吸收层上形成具有透光性的层。 通过具有透光性的层，用激光束选择性地照射光吸收层。 当光吸收层吸收激光束的能量时，由于光吸收层内的气体的发射或者光吸收层的升华，蒸发等，一部分光吸收层和 除去与光吸收层接触的透光性的层。 通过使用具有透光性的层的剩余部分或光吸收层的剩余部分作为掩模，并蚀刻第一层，可以将第一层加工成所需的形状。

公开(公告)号：US20080050921A1

公开(公告)日：2008-02-28

申请号：US11841361

申请日：2007-08-20

申请人： Hidekazu Miyairi ,  Koichiro Tanaka ,  Hironobu Shoji ,  Shunpei Yamazaki

发明人： Hidekazu Miyairi ,  Koichiro Tanaka ,  Hironobu Shoji ,  Shunpei Yamazaki

IPC分类号： H01L21/311

CPC分类号： H01L27/1288 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/32139 ,  H01L27/1214 ,  H01L29/66765 ,  H01L29/78633

摘要： A first layer is formed over a substrate, a light absorbing layer is formed over the first layer, and a layer having a light-transmitting property is formed over the light absorbing layer. The light absorbing layer is selectively irradiated with a laser beam via the layer having a light-transmitting property. When the light absorbing layer absorbs energy of the laser beam, due to emission of gas that is within the light absorbing layer, or sublimation, evaporation, or the like of the light absorbing layer, a part of the light absorbing layer and a part of the layer having a light-transmitting property in contact with the light absorbing layer are removed. By using the remaining part of the layer having a light-transmitting property or the remaining part of the light absorbing layer as a mask and etching the first layer, the first layer can be processed into a desired shape.

摘要翻译： 第一层形成在衬底上，在第一层上形成光吸收层，并且在光吸收层上形成具有透光性的层。 通过具有透光性的层，用激光束选择性地照射光吸收层。 当光吸收层吸收激光束的能量时，由于光吸收层内的气体的发射或者光吸收层的升华，蒸发等，一部分光吸收层和 除去与光吸收层接触的透光性的层。 通过使用具有透光性的层的剩余部分或光吸收层的剩余部分作为掩模，并蚀刻第一层，可以将第一层加工成所需的形状。

公开(公告)号：US08043969B2

公开(公告)日：2011-10-25

申请号：US12827347

申请日：2010-06-30

申请人： Hidekazu Miyairi ,  Koichiro Tanaka ,  Hironobu Shoji ,  Shunpei Yamazaki

发明人： Hidekazu Miyairi ,  Koichiro Tanaka ,  Hironobu Shoji ,  Shunpei Yamazaki

IPC分类号： H01L21/461

CPC分类号： H01L27/1288 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/32139 ,  H01L27/1214 ,  H01L29/66765 ,  H01L29/78633

摘要： A first layer is formed over a substrate, a light absorbing layer is formed over the first layer, and a layer having a light-transmitting property is formed over the light absorbing layer. The light absorbing layer is selectively irradiated with a laser beam via the layer having a light-transmitting property. When the light absorbing layer absorbs energy of the laser beam, due to emission of gas that is within the light absorbing layer, or sublimation, evaporation, or the like of the light absorbing layer, a part of the light absorbing layer and a part of the layer having a light-transmitting property in contact with the light absorbing layer are removed. By using the remaining part of the layer having a light-transmitting property or the remaining part of the light absorbing layer as a mask and etching the first layer, the first layer can be processed into a desired shape.

摘要翻译： 第一层形成在衬底上，在第一层上形成光吸收层，并且在光吸收层上形成具有透光性的层。 通过具有透光性的层，用激光束选择性地照射光吸收层。 当光吸收层吸收激光束的能量时，由于光吸收层内的气体的发射或者光吸收层的升华，蒸发等，一部分光吸收层和 除去与光吸收层接触的透光性的层。 通过使用具有透光性的层的剩余部分或光吸收层的剩余部分作为掩模，并蚀刻第一层，可以将第一层加工成所需的形状。

公开(公告)号：US20100267179A1

公开(公告)日：2010-10-21

申请号：US12827347

申请日：2010-06-30

申请人： Hidekazu Miyairi ,  Koichiro Tanaka ,  Hironobu Shoji ,  Shunpei Yamazaki

发明人： Hidekazu Miyairi ,  Koichiro Tanaka ,  Hironobu Shoji ,  Shunpei Yamazaki

IPC分类号： H01L33/00

CPC分类号： H01L27/1288 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/32139 ,  H01L27/1214 ,  H01L29/66765 ,  H01L29/78633

摘要： A first layer is formed over a substrate, a light absorbing layer is formed over the first layer, and a layer having a light-transmitting property is formed over the light absorbing layer. The light absorbing layer is selectively irradiated with a laser beam via the layer having a light-transmitting property. When the light absorbing layer absorbs energy of the laser beam, due to emission of gas that is within the light absorbing layer, or sublimation, evaporation, or the like of the light absorbing layer, a part of the light absorbing layer and a part of the layer having a light-transmitting property in contact with the light absorbing layer are removed. By using the remaining part of the layer having a light-transmitting property or the remaining part of the light absorbing layer as a mask and etching the first layer, the first layer can be processed into a desired shape.

摘要翻译： 第一层形成在衬底上，在第一层上形成光吸收层，并且在光吸收层上形成具有透光性的层。 通过具有透光性的层，用激光束选择性地照射光吸收层。 当光吸收层吸收激光束的能量时，由于光吸收层内的气体的发射或者光吸收层的升华，蒸发等，一部分光吸收层和 除去与光吸收层接触的透光性的层。 通过使用具有透光性的层的剩余部分或光吸收层的剩余部分作为掩模，并蚀刻第一层，可以将第一层加工成所需的形状。

公开(公告)号：US07326630B2

公开(公告)日：2008-02-05

申请号：US10815813

申请日：2004-04-02

申请人： Koichiro Tanaka ,  Hidekazu Miyairi ,  Hironobu Shoji

发明人： Koichiro Tanaka ,  Hidekazu Miyairi ,  Hironobu Shoji

IPC分类号： H01L21/20 ,  B23K26/06

CPC分类号： H01L21/02686 ,  B23K26/0604 ,  B23K26/0608 ,  B23K26/0624 ,  B23K26/0732 ,  B23K26/0736 ,  B23K26/0853 ,  B23K2101/40 ,  H01L21/2026

摘要： Crystallization by irradiation of laser light forms a plurality of convex portions (ridges) on the surface of a crystalline semiconductor film that is obtained, which decreases a film quality. A method of laser irradiation comprises the steps of: overlapping an area which is irradiated with a first laser beam of a pulsed oscillation having a wavelength of equal to or shorter than that of visible light with an area which is irradiated with a second laser beam of a pulsed oscillation having a longer wavelength than that of the first laser beam; and irradiating a subject to be irradiated with the first laser beam and the second laser beam while synchronizing the pulsed oscillation of the first laser beam with that of the second laser beam, and moving the subject to be irradiated, and the first laser beam and the second laser beam relatively each other.

摘要翻译： 通过照射激光进行结晶，在获得的结晶半导体膜的表面上形成多个凸部（凸脊），这降低了膜质量。 一种激光照射方法包括以下步骤：将具有等于或短于可见光的波长的脉冲振荡的第一激光束照射的区域与照射第二激光束的区域重叠 具有比第一激光束长的波长的脉冲振荡; 并且在使第一激光束的脉冲振荡与第二激光束的脉冲振荡同步的同时照射第一激光束和第二激光束照射的被摄体，并且移动要照射的被摄体，并且第一激光束和 第二激光束相对彼此。

公开(公告)号：US20120097963A1

公开(公告)日：2012-04-26

申请号：US13341045

申请日：2011-12-30

申请人： Chiho KOKUBO ,  Aiko Shiga ,  Shunpei Yamazaki ,  Hidekazu Miyairi ,  Koji Dairiki ,  Koichiro Tanaka

发明人： Chiho KOKUBO ,  Aiko Shiga ,  Shunpei Yamazaki ,  Hidekazu Miyairi ,  Koji Dairiki ,  Koichiro Tanaka

IPC分类号： H01L29/04 ,  H01L21/20

CPC分类号： H01L29/78675 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/127 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/66757

摘要： A first shape of semiconductor region having on its one side a plurality of sharp convex top-end portions is formed first and a continuous wave laser beam is used for radiation from the above region so as to crystallize the first shape of semiconductor region. A continuous wave laser beam condensed in one or plural lines is used for the laser beam. The first shape of semiconductor region is etched to form a second shape of semiconductor region in which a channel forming region and a source and drain region are formed. The second shape of semiconductor region is disposed so that a channel foaming range would be formed on respective crystal regions extending from the plurality of convex end portions. A semiconductor region adjacent to the channel forming region is eliminated.

摘要翻译： 首先形成在其一侧具有多个尖锐的凸顶部的半导体区域的第一形状，并且使用连续波激光束进行来自上述区域的辐射，以使半导体区域的第一形状结晶化。 在一条或多条线路中聚光的连续波激光束用于激光束。 蚀刻半导体区域的第一形状以形成其中形成沟道形成区域和源极和漏极区域的半导体区域的第二形状。 半导体区域的第二形状被设置成在从多个凸出端部延伸的各个晶体区域上形成沟道发泡范围。 消除了与沟道形成区域相邻的半导体区域。

公开(公告)号：US07915099B2

公开(公告)日：2011-03-29

申请号：US11785966

申请日：2007-04-23

申请人： Shunpei Yamazaki ,  Koichiro Tanaka ,  Hidekazu Miyairi

发明人： Shunpei Yamazaki ,  Koichiro Tanaka ,  Hidekazu Miyairi

IPC分类号： H01L21/00 ,  H01L21/84 ,  H01L21/20 ,  H01L21/36

CPC分类号： H01L21/02683 ,  B23K26/082 ,  B23K26/0821 ,  H01L21/02691 ,  H01L21/2026 ,  H01L27/1285

摘要： The speed of the laser scanned by the scanning means such as a galvanometer mirror or a polygon mirror is not constant in the center portion and in the end portion of the scanning width. As a result, the object, for example an amorphous semiconductor film, is irradiated with the excessive energy and therefore there is a risk that the amorphous semiconductor film is peeled. In the present invention, in the case where the laser spot of the energy beam output continuously on the irradiated object is scanned by moving it back and forth with the use of the scanning means or the like, the beam is irradiated to the outside of the element-forming region when the scanning speed of the spot is not the predetermined value, for example when the speed is not constant, and accelerates, decelerates, or is zero, for example in the positions where the scanning direction changes, or where the scanning starts or ends.

摘要翻译： 由扫描装置如电流计镜或多面镜扫描的激光的速度在扫描宽度的中央部分和末端部分中不是恒定的。 结果，物体（例如非晶半导体膜）被过量的能量照射，因此存在非晶半导体膜剥离的风险。 在本发明中，在通过使用扫描装置等来前后移动在被照射物体上连续输出的能量束的激光光斑进行扫描的情况下，将光束照射到 当点的扫描速度不是预定值时，例如当速度不恒定并且例如在扫描方向改变的位置加速，减速或为零时，或者扫描 开始或结束

公开(公告)号：US06933527B2

公开(公告)日：2005-08-23

申请号：US10330025

申请日：2002-12-27

申请人： Atsuo Isobe ,  Koji Dairiki ,  Hiroshi Shibata ,  Chiho Kokubo ,  Tatsuya Arao ,  Masahiko Hayakawa ,  Hidekazu Miyairi ,  Akihisa Shimomura ,  Koichiro Tanaka ,  Shunpei Yamazaki ,  Mai Akiba

发明人： Atsuo Isobe ,  Koji Dairiki ,  Hiroshi Shibata ,  Chiho Kokubo ,  Tatsuya Arao ,  Masahiko Hayakawa ,  Hidekazu Miyairi ,  Akihisa Shimomura ,  Koichiro Tanaka ,  Shunpei Yamazaki ,  Mai Akiba

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L29/104 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20

CPC分类号： H01L21/02683 ,  H01L21/2022 ,  H01L27/1281 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78675 ,  H01L29/78696

摘要： It is a problem to provide a semiconductor device production system using a laser crystallization method capable of preventing grain boundaries from forming in a TFT channel region and further preventing conspicuous lowering in TFT mobility due to grain boundaries, on-current decrease or off-current increase. An insulation film is formed on a substrate, and a semiconductor film is formed on the insulation film. Due to this, preferentially formed is a region in the semiconductor film to be concentratedly applied by stress during crystallization with laser light. Specifically, a stripe-formed or rectangular concavo-convex is formed on the semiconductor film. Continuous-oscillation laser light is irradiated along the striped concavo-convex or along a direction of a longer or shorter axis of rectangle.

摘要翻译： 提供一种使用能够防止在TFT沟道区域中形成晶界的激光晶体化方法的半导体器件制造系统的问题，并且进一步防止由于晶界引起的TFT迁移率的明显降低，导通电流降低或截止电流增加 。 在基板上形成绝缘膜，在绝缘膜上形成半导体膜。 由此，优选形成半导体膜中通过激光在结晶期间通过应力集中施加的区域。 具体地，在半导体膜上形成条状或矩形凹凸。 连续振荡激光沿着条纹凹凸或长轴或短轴方向照射。

公开(公告)号：US08093593B2

公开(公告)日：2012-01-10

申请号：US11516616

申请日：2006-09-07

申请人： Chiho Kokubo ,  Aiko Shiga ,  Shunpei Yamazaki ,  Hidekazu Miyairi ,  Koji Dairiki ,  Koichiro Tanaka

发明人： Chiho Kokubo ,  Aiko Shiga ,  Shunpei Yamazaki ,  Hidekazu Miyairi ,  Koji Dairiki ,  Koichiro Tanaka

IPC分类号： H01L29/10

CPC分类号： H01L29/78675 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/127 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/66757

摘要： A first shape of semiconductor region having on its one side a plurality of sharp convex top-end portions is formed first and a continuous wave laser beam is used for radiation from the above region so as to crystallize the first shape of semiconductor region. A continuous wave laser beam condensed in one or plural lines is used for the laser beam. The first shape of semiconductor region is etched to form a second shape of semiconductor region in which a channel forming region and a source and drain region are formed. The second shape of semiconductor region is disposed so that a channel forming range would be formed on respective crystal regions extending from the plurality of convex end portions. A semiconductor region adjacent to the channel forming region is eliminated.

摘要翻译： 首先形成在其一侧具有多个尖锐的凸顶部的半导体区域的第一形状，并且使用连续波激光束进行来自上述区域的辐射，以使半导体区域的第一形状结晶化。 在一条或多条线路中聚光的连续波激光束用于激光束。 蚀刻半导体区域的第一形状以形成其中形成沟道形成区域和源极和漏极区域的半导体区域的第二形状。 半导体区域的第二形状被设置成在从多个凸起端部延伸的各个晶体区域上形成沟道形成范围。 消除了与沟道形成区域相邻的半导体区域。

公开(公告)号：US08044372B2

公开(公告)日：2011-10-25

申请号：US11812557

申请日：2007-06-20

申请人： Shunpei Yamazaki ,  Koichiro Tanaka ,  Hidekazu Miyairi ,  Aiko Shiga ,  Akihisa Shimomura ,  Mai Akiba

发明人： Shunpei Yamazaki ,  Koichiro Tanaka ,  Hidekazu Miyairi ,  Aiko Shiga ,  Akihisa Shimomura ,  Mai Akiba

IPC分类号： G21G1/00

CPC分类号： H01L21/02683 ,  B23K26/0823 ,  B23K2101/40 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296 ,  H01L27/3244 ,  Y10S438/973

摘要： Continuous wave laser apparatus with enhanced processing efficiency is provided as well as a method of manufacturing a semiconductor device using the laser apparatus. The laser apparatus has: a laser oscillator; a unit for rotating a process object; a unit for moving the center of the rotation along a straight line; and an optical system for processing laser light that is outputted from the laser oscillator to irradiate with the laser light a certain region within the moving range of the process object. The laser apparatus is characterized in that the certain region is on a line extended from the straight line and that the position at which the certain region overlaps the process object is moved by rotating the process object while moving the center of the rotation along the straight line.

摘要翻译： 提供了具有增强的处理效率的连续波激光装置以及使用该激光装置的半导体装置的制造方法。 激光装置具有：激光振荡器; 用于旋转过程对象的单元; 沿着直线移动旋转中心的单元; 以及用于处理从激光振荡器输出的激光的光学系统，用于将激光照射到处理对象的移动范围内的特定区域。 所述激光装置的特征在于，所述特定区域处于从所述直线延伸的线上，并且所述特定区域与所述加工对象重叠的位置通过使所述加工对象旋转而沿着所述直线移动所述旋转中心而被移动 。