公开(公告)号：US20050134935A1

公开(公告)日：2005-06-23

申请号：US10742131

申请日：2003-12-19

申请人： Mauritius Schmidtler ,  Scott Texeira ,  Christopher Harris ,  Sameer Samat ,  Roland Borrey ,  Anthony Macciola

发明人： Mauritius Schmidtler ,  Scott Texeira ,  Christopher Harris ,  Sameer Samat ,  Roland Borrey ,  Anthony Macciola

IPC分类号： G06T1/00 ,  G06K9/20 ,  G06T7/00 ,  H04N1/32 ,  H04N1/387 ,  H04N1/40

CPC分类号： G06F17/21 ,  G06K9/00442 ,  H04N1/32112 ,  H04N2201/3225 ,  H04N2201/3243

摘要： A method and system for delineating document boundaries and identifying document types by analyzing digital images of one or more documents, automatically categorizing one or more pages or subdocuments within the one or more documents and automatically generating delineation identifiers, such as computer-generated images of separation pages inserted between digital images belonging to different categories, a description of the categorization sequence of the digital images, or a computer-generated electronic label affixed or associated with said digital images.

摘要翻译： 通过分析一个或多个文档的数字图像来自动分类一个或多个文档中的一个或多个页面或子文档并自动生成描绘标识符（例如计算机生成的分离图像）的方法和系统，用于描绘文档边界和识别文档类型 插入属于不同类别的数字图像之间的页面，数字图像的分类序列的描述，或者附加或与所述数字图像相关联的计算机生成的电子标签。

公开(公告)号：US20050051327A1

公开(公告)日：2005-03-10

申请号：US10831351

申请日：2004-04-23

申请人： Harold Vinegar ,  Peter Veenstra ,  Steven Giles ,  Chester Sandberg ,  Frederick Henry Rambow ,  Christopher Harris ,  Lanny Schoeling ,  Mark Picha ,  Etuan Zhang ,  Gary Beer ,  Fredrick Carl ,  Taixu Bai ,  Dong Kim ,  Michael Fairbanks ,  Guillermo Sanz

发明人： Harold Vinegar ,  Peter Veenstra ,  Steven Giles ,  Chester Sandberg ,  Frederick Henry Rambow ,  Christopher Harris ,  Lanny Schoeling ,  Mark Picha ,  Etuan Zhang ,  Gary Beer ,  Fredrick Carl ,  Taixu Bai ,  Dong Kim ,  Michael Fairbanks ,  Guillermo Sanz

IPC分类号： E21B36/02 ,  E21B36/04 ,  E21B43/24

CPC分类号： E21B47/00 ,  E21B36/02 ,  E21B36/04 ,  E21B43/24 ,  E21B43/2401 ,  E21B47/06 ,  E21B47/065

摘要： A process may include providing heat from one or more heaters to at least a portion of a subsurface formation. Heat may transfer from one or more heaters to a part of a formation. In some embodiments, heat from the one or more heat sources may pyrolyze at least some hydrocarbons in a part of a subsurface formation. Hydrocarbons and/or other products may be produced from a subsurface formation. Certain embodiments describe apparatus, methods, and/or processes used in treating a subsurface or hydrocarbon containing formation.

摘要翻译： 过程可以包括将热量从一个或多个加热器提供给地下地层的至少一部分。 热量可以从一个或多个加热器转移到地层的一部分。 在一些实施例中，来自一个或多个热源的热可以在地下地层的一部分中热解至少一些烃。 碳氢化合物和/或其它产物可以从地下地层生产。 某些实施方案描述了用于处理地下或含烃地层的装置，方法和/或方法。

公开(公告)号：US06306773B1

公开(公告)日：2001-10-23

申请号：US09496085

申请日：2000-02-01

申请人： Christian Adås ,  Stefan Karlsson ,  Andrei Konstantinov ,  Christopher Harris ,  Thomas Hörman

发明人： Christian Adås ,  Stefan Karlsson ,  Andrei Konstantinov ,  Christopher Harris ,  Thomas Hörman

IPC分类号： H01L21302

CPC分类号： B81C1/00595 ,  B81C2201/0114 ,  B81C2201/0133 ,  H01L21/0475

摘要： The invention relates to a method for selective etching of SiC, the etching being carried out by applying a positive potential to a layer (3; 8) of p-type SiC being in contact with an etching solution containing fluorine ions and having an oxidising effect on SiC. The invention also relates to a method for producing a SiC micro structure having free hanging parts (i.e. diaphragm, cantilever or beam) on a SiC-substrate, a method for producing a MEMS device of SiC having a free hanging structure, and a method for producing a piezo-resistive pressure sensor comprising the step of applying a positive potential to a layer (8) of p-type SiC being in contact with an etching solution containing fluorine ions and having an oxidising effect on SiC.

摘要翻译： 本发明涉及一种选择性蚀刻SiC的方法，该蚀刻是通过向与含有氟离子的蚀刻溶液接触并具有氧化效应的p型SiC层（3; 8）施加正电位而进行的 在SiC上。 本发明还涉及一种用于制造在SiC衬底上具有自由悬挂部分（即隔膜，悬臂或梁）的SiC微结构的方法，用于制造具有自由悬挂结构的SiC的MEMS器件的方法，以及用于 制造压阻式压力传感器，包括向与所述氟离子的蚀刻溶液接触并对SiC具有氧化作用的p型SiC层（8）施加正电位的步骤。

公开(公告)号：US6150671A

公开(公告)日：2000-11-21

申请号：US636943

申请日：1996-04-24

申请人： Christopher Harris ,  Ulf Gustafsson ,  Mietek Bakowski

发明人： Christopher Harris ,  Ulf Gustafsson ,  Mietek Bakowski

IPC分类号： H01L21/04 ,  H01L29/08 ,  H01L29/10 ,  H01L29/24 ,  H01L29/78 ,  H01L29/22

CPC分类号： H01L29/7813 ,  H01L29/66068 ,  H01L29/0847 ,  H01L29/1095 ,  H01L29/1608 ,  Y10S438/931

摘要： A transistor of SiC having a drain and a highly doped substrate layer is formed on the drain. A highly n type buffer layer may optionally be formed on the substrate layer. A low doped n-type drift layer, a p-type base layer, a high doped n-type source region layer and a source are formed on the substrate layer. An insulating layer with a gate electrode is arranged on top of the base layer and extends substantially laterally from at least the source region layer to a n-type layer. When a voltage is applied to the gate electrode, a conducting inversion channel is formed extending substantially laterally in the base layer at an interface of the p-type base layer and the insulating layer. The p-type base layer is low doped in a region next to the interface to the insulating layer at which the inversion channel is formed and highly doped in a region thereunder next to the drift layer.

摘要翻译： 在漏极上形成具有漏极和高掺杂衬底层的SiC晶体管。 可以可选地在衬底层上形成高度n型缓冲层。 在衬底层上形成低掺杂n型漂移层，p型基极层，高掺杂n型源区域层和源极。 具有栅极电极的绝缘层布置在基层的顶部上，并且至少从源极区域基本上横向延伸到n型层。 当向栅电极施加电压时，在p型基极层和绝缘层的界面处，在基极层中基本上横向延伸形成导电反转沟道。 p型基层在与形成反型沟道的绝缘层的界面旁边的区域中低掺杂，并且在漂移层旁边的区域中高度掺杂。

公开(公告)号：US6127695A

公开(公告)日：2000-10-03

申请号：US247469

申请日：1999-02-08

申请人： Christopher Harris ,  Andrei Konstantinov

发明人： Christopher Harris ,  Andrei Konstantinov

IPC分类号： H01L21/04 ,  H01L29/24 ,  H01L29/78 ,  H01L29/808 ,  H01L29/812 ,  H01L31/0312 ,  H01L21/335

CPC分类号： H01L29/812 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7838 ,  Y10S438/931

摘要： A lateral field effect transistor of SiC for high switching frequencies comprises a source region layer (5) and a drain region layer (6) laterally spaced and highly doped n-type, an n-type channel layer (4) extending laterally and interconnecting the source region layer and the drain region layer for conducting a current between these layers in the on-state of the transistor, and a gate electrode (9) arranged to control the channel layer to be conducting or blocking through varying the potential applied to the gate electrode. A highly doped p-type base layer (12) is arranged next to the channel layer at least partially overlapping the gate electrode and being at a lateral distance to the drain region layer. The base layer is shorted to the source region layer.

摘要翻译： 用于高开关频率的SiC的横向场效应晶体管包括横向隔开并且高度掺杂的n型源极区域层（5）和漏极区域层（6），横向延伸的n型沟道层（4） 源极区域层和漏极区域层，用于在晶体管的导通状态下传导这些层之间的电流;以及栅电极（9），其布置成通过改变施加到栅极的电位来控制沟道层导通或阻挡 电极。 在沟道层的旁边配置有高度掺杂的p型基极层（12），至少部分地与栅电极重叠并且与漏极区域处于横向距离。 基极层与源极区域短接。

公开(公告)号：US6096627A

公开(公告)日：2000-08-01

申请号：US115813

申请日：1998-07-15

申请人： Christopher Harris ,  Andrei Konstantinov ,  Erik Janzen

发明人： Christopher Harris ,  Andrei Konstantinov ,  Erik Janzen

IPC分类号： H01L21/22 ,  C23C14/48 ,  C30B31/22 ,  H01L21/04 ,  H01L21/265 ,  H01L29/861

CPC分类号： C23C14/48 ,  C30B31/22 ,  H01L21/046 ,  Y10S438/931

摘要： A method for introducing an impurity dopant into a semiconductor layer of SiC is provided. Ions are implanted into the semiconductor layer so that a near surface of the semiconductor layer becomes doped and amorphous. The semiconductor layer is then annealed at a temperature so that the dopant diffuses into a non-implanted sublayer of the semiconductor layer below the near surface layer.

摘要翻译： 提供了将杂质掺杂剂引入到SiC的半导体层中的方法。 将离子注入到半导体层中，使得半导体层的近表面变得掺杂和无定形。 然后半导体层在温度下退火，使得掺杂剂扩散到在近表面层下面的半导体层的未注入的子层中。

公开(公告)号：US6091108A

公开(公告)日：2000-07-18

申请号：US971682

申请日：1997-11-17

申请人： Christopher Harris ,  Bo Bijlenga ,  Lennart Zdansky ,  Ulf Gustafsson ,  Mietek Bakowski ,  Andrey Konstantinov

发明人： Christopher Harris ,  Bo Bijlenga ,  Lennart Zdansky ,  Ulf Gustafsson ,  Mietek Bakowski ,  Andrey Konstantinov

IPC分类号： H01L29/16 ,  H01L21/04 ,  H01L29/06 ,  H01L29/12 ,  H01L29/24 ,  H01L29/78 ,  H01L29/745

CPC分类号： H01L29/66068 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/1608 ,  H01L29/7395 ,  H01L29/7802 ,  H01L29/7813

摘要： A semiconductor device of SiC is adapted to hold high voltages in the blocking state thereof. The device comprises two parts (1, 2) each comprising one or more semiconductor layers of SiC and connected in series between two opposite terminals of the device, namely a sub-semiconductor device (1) able to withstand only low voltages in the blocking state thereof and a voltage-limiting part (2) able to withstand high voltages in the blocking state of the device and adapted to protect said sub-semiconductor device by taking a major part of the voltage over the device in the blocking state thereof.

摘要翻译： SiC的半导体器件适于在其阻挡状态下保持高电压。 该器件包括两个部分（1,2），每个部分包括一个或多个SiC半导体层，并且串联连接在器件的两个相对端子之间，即能够仅承受阻塞状态的低电压的子半导体器件（1） 以及能够承受器件的阻断状态下的高电压的电压限制部分（2），并且适用于通过在其阻塞状态下将器件的大部分电压占据主要部分来保护所述次半导体器件。

公开(公告)号：US5934283A

公开(公告)日：1999-08-10

申请号：US839777

申请日：1997-04-15

申请人： Germain E. Willem ,  Christopher Harris ,  Susan J. Hartjes-Doherty ,  Daniel G. Holman

发明人： Germain E. Willem ,  Christopher Harris ,  Susan J. Hartjes-Doherty ,  Daniel G. Holman

IPC分类号： A61F2/00 ,  A61F5/48

CPC分类号： A61F2/0045

摘要： A sling device for surgical implantation into human recipient to support the urethra, the sling including an elongated strip of supple material. The elongated strip has a center portion, opposite first and second side portions, and a slot passing through the center portion, through which one of the side portions can pass, thereby forming a loop in the elongated strip. The material is a biological acceptable material for implantation into the human recipient, preferably selected from the group consisting of synthetic polymers, processed animal tissues, and combination thereof. A method of reducing the incidence of involuntary urination or restoring urinary continence in an incontinent human subject is also disclosed, including the steps of providing a sling device of the type previously described and surgically implanting the sling device in the human subject so that the urethra is biased upward so as to elevate the urethra.

摘要翻译： 用于手术植入人接受者以支撑尿道的吊带装置，吊带包括细长的柔软材料条。 细长带具有中心部分，相对的第一和第二侧部，以及通过中心部分的槽，侧部中的一个可以通过该槽，从而在细长带中形成环。 该材料是用于植入人接受者的生物可接受材料，优选选自合成聚合物，加工动物组织及其组合。 还公开了一种减少失禁人体受试者的非自愿排尿或恢复尿路的发生率的方法，包括以下步骤：提供前述类型的吊索装置，并将手术植入吊装装置放置在人体受试者中，使得尿道是 向上偏置，以便提升尿道。

公开(公告)号：US5900648A

公开(公告)日：1999-05-04

申请号：US829481

申请日：1997-03-28

申请人： Christopher Harris ,  Andrei Konstantinov ,  Erik Janzen

发明人： Christopher Harris ,  Andrei Konstantinov ,  Erik Janzen

IPC分类号： H01L29/16 ,  H01L29/12 ,  H01L29/24 ,  H01L29/43 ,  H01L29/51 ,  H01L29/739 ,  H01L29/78 ,  H01L29/80 ,  H01L31/0312 ,  H01L31/0256 ,  H01L29/76 ,  H01L29/94

CPC分类号： H01L29/518 ,  H01L29/1608 ,  H01L29/432 ,  H01L29/511 ,  H01L29/7395 ,  H01L29/7802 ,  H01L29/802

摘要： A semiconductor device comprises a semiconductor layer of SiC and an insulating layer thereon for insulating the SiC layer with respect to a metal plate constituting a gate and connectable to a voltage for creating a conducting surface channel at a SiC layer-insulating layer interface, wherein at least a portion of the insulating layer closest to the interface is made of a crystalline material which is substantially lattice-matched to SiC and has substantially the same coefficient of thermal expansion as SiC; and wherein the material has AlN as the only component or as a major component of an alloy with insulating properties.

摘要翻译： 半导体器件包括SiC半导体层及其上的绝缘层，用于使SiC层相对于构成栅极的金属板绝缘，并且可连接到在SiC层 - 绝缘层界面处产生导电表面沟道的电压，其中在 最接近界面的绝缘层的至少一部分由与SiC基本上晶格匹配并且具有与SiC大致相同的热膨胀系数的结晶材料制成; 并且其中所述材料具有作为仅具有绝缘性的合金的组分或作为主要成分的AlN。

公开(公告)号：US08684167B2

公开(公告)日：2014-04-01

申请号：US13217343

申请日：2011-08-25

申请人： Christopher Harris ,  Sean Finley

发明人： Christopher Harris ,  Sean Finley

IPC分类号： B65G47/66

CPC分类号： B65G1/00 ,  B65G2201/0267

摘要： An apparatus for dispensing a pallet sleeve beneath a load comprises a conveyor component including conveyor elements configured to convey the load thereon in a first direction, one or more stations spaced apart along the first direction and a mechanism for changing the relative vertical positions of the conveyor elements and the stations. The apparatus further includes a pallet sleeve dispenser adjacent the conveyor component and configured for storing pallet sleeves in spaced apart sections aligned with a corresponding station. A drive element associated with each of the stations is configured to engage a pallet sleeve to drive the pallet sleeve from the dispenser to the conveyor component in a second direction substantially perpendicular to the first direction. A retention mechanism is provided to support a stack of pallet sleeves above a lowermost sleeve being driven from the dispenser to the position underneath the load on the conveyor component.

摘要翻译： 用于在货物下方分配托盘套筒的装置包括输送机部件，其包括构造成沿第一方向输送负载的输送机元件，沿着第一方向间隔开的一个或多个工位，以及用于改变输送机的相对垂直位置的机构 元素和电台。 该装置还包括邻近传送器部件的托盘套筒分配器，并且构造成用于将托盘套筒存储在与对应站对齐的间隔开的部分中。 与每个站相关联的驱动元件构造成接合托盘套筒，以在基本上垂直于第一方向的第二方向上将托盘套筒从分配器驱动到输送机部件。 提供保持机构以支撑从分配器驱动到输送机部件上的负载下方的最下层套筒之上的托盘套筒的堆叠。