利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

121 条记录 (耗时 0.033 秒)

    Method of producing a semiconductor device of SiC
    83.
    发明授权
    Method of producing a semiconductor device of SiC 有权
    制造SiC半导体器件的方法

    公开(公告)号：US06306773B1

    公开(公告)日：2001-10-23

    申请号：US09496085

    申请日：2000-02-01

    申请人： Christian Adås ,  Stefan Karlsson ,  Andrei Konstantinov ,  Christopher Harris ,  Thomas Hörman

    发明人： Christian Adås ,  Stefan Karlsson ,  Andrei Konstantinov ,  Christopher Harris ,  Thomas Hörman

    IPC分类号： H01L21302

    CPC分类号： B81C1/00595 ,  B81C2201/0114 ,  B81C2201/0133 ,  H01L21/0475

    摘要： The invention relates to a method for selective etching of SiC, the etching being carried out by applying a positive potential to a layer (3; 8) of p-type SiC being in contact with an etching solution containing fluorine ions and having an oxidising effect on SiC. The invention also relates to a method for producing a SiC micro structure having free hanging parts (i.e. diaphragm, cantilever or beam) on a SiC-substrate, a method for producing a MEMS device of SiC having a free hanging structure, and a method for producing a piezo-resistive pressure sensor comprising the step of applying a positive potential to a layer (8) of p-type SiC being in contact with an etching solution containing fluorine ions and having an oxidising effect on SiC.

    摘要翻译： 本发明涉及一种选择性蚀刻SiC的方法，该蚀刻是通过向与含有氟离子的蚀刻溶液接触并具有氧化效应的p型SiC层（3; 8）施加正电位而进行的 在SiC上。 本发明还涉及一种用于制造在SiC衬底上具有自由悬挂部分（即隔膜，悬臂或梁）的SiC微结构的方法，用于制造具有自由悬挂结构的SiC的MEMS器件的方法，以及用于 制造压阻式压力传感器，包括向与所述氟离子的蚀刻溶液接触并对SiC具有氧化作用的p型SiC层（8）施加正电位的步骤。

    Semiconductor device having high channel mobility and a high breakdown voltage for high power applications
    84.
    发明授权
    Semiconductor device having high channel mobility and a high breakdown voltage for high power applications 失效
    对于高功率应用，具有高沟道迁移率和高击穿电压的半导体器件

    公开(公告)号：US6150671A

    公开(公告)日：2000-11-21

    申请号：US636943

    申请日：1996-04-24

    申请人： Christopher Harris ,  Ulf Gustafsson ,  Mietek Bakowski

    发明人： Christopher Harris ,  Ulf Gustafsson ,  Mietek Bakowski

    IPC分类号： H01L21/04 ,  H01L29/08 ,  H01L29/10 ,  H01L29/24 ,  H01L29/78 ,  H01L29/22

    CPC分类号： H01L29/7813 ,  H01L29/66068 ,  H01L29/0847 ,  H01L29/1095 ,  H01L29/1608 ,  Y10S438/931

    摘要： A transistor of SiC having a drain and a highly doped substrate layer is formed on the drain. A highly n type buffer layer may optionally be formed on the substrate layer. A low doped n-type drift layer, a p-type base layer, a high doped n-type source region layer and a source are formed on the substrate layer. An insulating layer with a gate electrode is arranged on top of the base layer and extends substantially laterally from at least the source region layer to a n-type layer. When a voltage is applied to the gate electrode, a conducting inversion channel is formed extending substantially laterally in the base layer at an interface of the p-type base layer and the insulating layer. The p-type base layer is low doped in a region next to the interface to the insulating layer at which the inversion channel is formed and highly doped in a region thereunder next to the drift layer.

    摘要翻译： 在漏极上形成具有漏极和高掺杂衬底层的SiC晶体管。 可以可选地在衬底层上形成高度n型缓冲层。 在衬底层上形成低掺杂n型漂移层，p型基极层，高掺杂n型源区域层和源极。 具有栅极电极的绝缘层布置在基层的顶部上，并且至少从源极区域基本上横向延伸到n型层。 当向栅电极施加电压时，在p型基极层和绝缘层的界面处，在基极层中基本上横向延伸形成导电反转沟道。 p型基层在与形成反型沟道的绝缘层的界面旁边的区域中低掺杂，并且在漂移层旁边的区域中高度掺杂。

    Lateral field effect transistor of SiC, a method for production thereof and a use of such a transistor
    85.
    发明授权
    Lateral field effect transistor of SiC, a method for production thereof and a use of such a transistor 有权
    SiC的横向场效应晶体管，其制造方法和这种晶体管的使用

    公开(公告)号：US6127695A

    公开(公告)日：2000-10-03

    申请号：US247469

    申请日：1999-02-08

    申请人： Christopher Harris ,  Andrei Konstantinov

    发明人： Christopher Harris ,  Andrei Konstantinov

    IPC分类号： H01L21/04 ,  H01L29/24 ,  H01L29/78 ,  H01L29/808 ,  H01L29/812 ,  H01L31/0312 ,  H01L21/335

    CPC分类号： H01L29/812 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7838 ,  Y10S438/931

    摘要： A lateral field effect transistor of SiC for high switching frequencies comprises a source region layer (5) and a drain region layer (6) laterally spaced and highly doped n-type, an n-type channel layer (4) extending laterally and interconnecting the source region layer and the drain region layer for conducting a current between these layers in the on-state of the transistor, and a gate electrode (9) arranged to control the channel layer to be conducting or blocking through varying the potential applied to the gate electrode. A highly doped p-type base layer (12) is arranged next to the channel layer at least partially overlapping the gate electrode and being at a lateral distance to the drain region layer. The base layer is shorted to the source region layer.

    摘要翻译： 用于高开关频率的SiC的横向场效应晶体管包括横向隔开并且高度掺杂的n型源极区域层（5）和漏极区域层（6），横向延伸的n型沟道层（4） 源极区域层和漏极区域层，用于在晶体管的导通状态下传导这些层之间的电流;以及栅电极（9），其布置成通过改变施加到栅极的电位来控制沟道层导通或阻挡 电极。 在沟道层的旁边配置有高度掺杂的p型基极层（12），至少部分地与栅电极重叠并且与漏极区域处于横向距离。 基极层与源极区域短接。

    Pubovaginal sling device
    88.
    发明授权
    Pubovaginal sling device 失效
    阴道吊带装置

    公开(公告)号：US5934283A

    公开(公告)日：1999-08-10

    申请号：US839777

    申请日：1997-04-15

    申请人： Germain E. Willem ,  Christopher Harris ,  Susan J. Hartjes-Doherty ,  Daniel G. Holman

    发明人： Germain E. Willem ,  Christopher Harris ,  Susan J. Hartjes-Doherty ,  Daniel G. Holman

    IPC分类号： A61F2/00 ,  A61F5/48

    CPC分类号： A61F2/0045

    摘要： A sling device for surgical implantation into human recipient to support the urethra, the sling including an elongated strip of supple material. The elongated strip has a center portion, opposite first and second side portions, and a slot passing through the center portion, through which one of the side portions can pass, thereby forming a loop in the elongated strip. The material is a biological acceptable material for implantation into the human recipient, preferably selected from the group consisting of synthetic polymers, processed animal tissues, and combination thereof. A method of reducing the incidence of involuntary urination or restoring urinary continence in an incontinent human subject is also disclosed, including the steps of providing a sling device of the type previously described and surgically implanting the sling device in the human subject so that the urethra is biased upward so as to elevate the urethra.

    摘要翻译： 用于手术植入人接受者以支撑尿道的吊带装置，吊带包括细长的柔软材料条。 细长带具有中心部分，相对的第一和第二侧部，以及通过中心部分的槽，侧部中的一个可以通过该槽，从而在细长带中形成环。 该材料是用于植入人接受者的生物可接受材料，优选选自合成聚合物，加工动物组织及其组合。 还公开了一种减少失禁人体受试者的非自愿排尿或恢复尿路的发生率的方法，包括以下步骤：提供前述类型的吊索装置，并将手术植入吊装装置放置在人体受试者中，使得尿道是 向上偏置，以便提升尿道。