Apparatus for inspecting three dimensional shape of a specimen and method of watching an etching process using the same
    82.
    发明授权
    Apparatus for inspecting three dimensional shape of a specimen and method of watching an etching process using the same 有权
    用于检查样本的三维形状的装置和使用其的观察蚀刻工艺的方法

    公开(公告)号:US07230239B2

    公开(公告)日:2007-06-12

    申请号:US10918381

    申请日:2004-08-16

    IPC分类号: H01L21/302 H01L21/461

    摘要: A system for inspecting a pattern shape operates to detect secondary electrons from a specimen by irradiation of a focused electron beam and perform arithmetic processing on this detected signal. The detected signal waveform is divided into a plurality of regions on the basis of a variation of the signal quantity. The size of the divided regions is used for quantitative evaluation of a three dimensional shape of the specimen. This system, especially by displaying measurement results of the pattern shape for each divided signal waveform (bottom width in the final shape, resist bottom width, etching shift quantity, and etching slope-angle component by the exposure), permits an easy check on which a component varies and how the component varies in all shape variations. With this arrangement, a pattern cross section information effective in determining etching process conditions can be acquired using images by an in-line SEM capable of nondestructive observation.

    摘要翻译: 用于检查图案形状的系统用于通过照射聚焦电子束来检测来自样品的二次电子,并对该检测信号进行运算处理。 检测信号波形根据信号量的变化被分成多个区域。 分割区域的大小用于样本的三维形状的定量评估。 该系统特别是通过显示每个分割信号波形(最终形状的底部宽度,抗蚀剂底部宽度,蚀刻偏移量和通过曝光的蚀刻倾斜角度分量)的图案形状的测量结果,可以容易地检查哪个 一个组件变化,以及组件在所有形状变化中的变化。 通过这种布置,可以通过能够进行非破坏性观察的直列SEM的图像来获取有效确定蚀刻工艺条件的图案横截面信息。

    Method of measuring pattern dimension and method of controlling semiconductor device process
    84.
    发明授权
    Method of measuring pattern dimension and method of controlling semiconductor device process 有权
    测量图案尺寸的方法和半导体器件工艺的控制方法

    公开(公告)号:US07173268B2

    公开(公告)日:2007-02-06

    申请号:US10986910

    申请日:2004-11-15

    IPC分类号: G01N21/86

    摘要: This invention provides a method of measuring semiconductor pattern dimensions capable of realizing a stable and highly precise pattern dimension measurement technique even when the pattern cross-sectional shapes are changed and making the calculation amount relatively small to reduce the calculation time. More specifically, the relationship between cross-sectional shapes of a pattern and measurement errors in a specified image processing technique is evaluated in advance by the electron beam simulation in a pattern measurement system in a length measuring SEM, and in the actual dimension measurement, dimensions of an evaluation objective pattern are measured from image signals of a scanning electron microscope, and errors of the dimensional measurement of the evaluation objective pattern are estimated and revised based on the relationship between cross-sectional shapes of a pattern and measurement errors evaluated in advance, thereby realizing highly precise measurement where dimensional errors depending on pattern solid shapes are eliminated.

    摘要翻译: 本发明提供一种测量半导体图案尺寸的方法,即使当图案截面形状改变并使计算量相对较小以减少计算时间时,也能够实现稳定且高度精确的图案尺寸测量技术。 更具体地说,通过长度测量SEM中的图案测量系统中的电子束模拟预先评估图案的截面形状与特定图像处理技术中的测量误差之间的关系,并且在实际尺寸测量中,尺寸 根据扫描电子显微镜的图像信号测量评价对象图案,并且基于预先评估的图案的截面形状和测量误差之间的关系来估计和修正评估对象图案的尺寸测量的误差, 从而实现高精度测量,其中取消了取决于图形实心形状的尺寸误差。

    Charged particle beam adjusting method and charged particle beam apparatus
    87.
    发明申请
    Charged particle beam adjusting method and charged particle beam apparatus 有权
    带电粒子束调节法和带电粒子束装置

    公开(公告)号:US20050236570A1

    公开(公告)日:2005-10-27

    申请号:US11104631

    申请日:2005-04-13

    摘要: In an apparatus for obtaining an image by irradiating a charged particle beam on a specimen, a condition of the beam conditioned differently from vertical incidence as in the case of the beam being tilted is required to be adjusted. To this end, the apparatus has a controller for automatically controlling a stigmator, an objective lens and a deflector such that astigmatism is corrected, focus is adjusted and view filed shift is corrected. The controller has a selector for inhibiting at least one of the astigmatism correction, focus adjustment and FOV shift correction from being executed.

    摘要翻译: 在用于通过将带电粒子束照射在样本上来获得图像的装置中,需要调整如在光束倾斜的情况下不同于垂直入射而调节的光束的条件。 为此,该装置具有用于自动控制瞄光器,物镜和偏转器的控制器,从而校正像散,调整焦点并校正视野移动。 控制器具有用于禁止执行散光校正,聚焦调整和FOV偏移校正中的至少一个的选择器。

    Method and apparatus for observing a specimen
    88.
    发明申请
    Method and apparatus for observing a specimen 有权
    用于观察试样的方法和装置

    公开(公告)号:US20050133718A1

    公开(公告)日:2005-06-23

    申请号:US10995388

    申请日:2004-11-24

    摘要: It is predicted that an observational direction (or an incident direction of an electron beam) in an observed image actually obtained has some errors compared to a set value. The error portion affects the analysis of the observed image later. Therefore, a convergent electron beam is irradiated on a specimen with a known shape, electrons discharged from the specimen surface are detected, an image of the electron is obtained, an incident direction of the convergent electron beam is estimated based on a geometric deformation on an image of the specimen with a known shape, and a 3D shape or a shape of a cross section of a specimen to be observed from a SEM image of the specimen to be observed is obtained by use of the information of the incident direction of the estimated convergent electron beam.

    摘要翻译: 预测实际获得的观察图像中的观察方向(或电子束的入射方向)与设定值相比具有一些误差。 错误部分稍后影响观察图像的分析。 因此,会聚电子束被照射在具有已知形状的样本上,检测从试样表面排出的电子,获得电子的图像,基于上述几何变形来估计会聚电子束的入射方向 通过使用估计的样本的入射方向的信息,获得具有已知形状的样本的图像,以及待观察的样本的SEM图像将要观察的样本的3D形状或截面形状 会聚电子束。

    Mass spectrometer and mass analyzing method
    90.
    发明授权
    Mass spectrometer and mass analyzing method 有权
    质谱仪和质量分析方法

    公开(公告)号:US09184037B2

    公开(公告)日:2015-11-10

    申请号:US13527627

    申请日:2012-06-20

    IPC分类号: H01J49/00 H01J49/04

    CPC分类号: H01J49/0409 H01J49/0495

    摘要: A mass spectrometer including a sample attaching member of attaching a sample, an ionizing chamber including an introductory port of the sample attaching member and an ionization source of generating a sample ion, a vacuumed chamber having a mass analyzer of analyzing the sample ion, and an opening/closing mechanism provided between the ionizing chamber and the vacuumed chamber, in which the opening/closing mechanism is controlled from a closed state to an open state after introducing the sample attaching member into the ionizing chamber to thereby enable to perform ionization with inconsiderable fragmentation at a high sensitivity with a high throughput.

    摘要翻译: 一种质谱仪,包括附着样品的样品附着构件,包括样品附着构件的入口的电离室和产生样品离子的离子源,具有分析样品离子的质量分析器的真空室,以及 设置在离子化室和真空室之间的开/关机构,其中将样品附着构件引入电离室之后,将开/关机构从关闭状态控制到打开状态,从而能够以不可分割的碎片进行电离 灵敏度高,吞吐量高。