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    Magnetoresistive element and magnetic memory using the same
    84.
    发明授权
    Magnetoresistive element and magnetic memory using the same 有权
    磁阻元件和使用其的磁存储器

    公开(公告)号：US08669628B2

    公开(公告)日：2014-03-11

    申请号：US13424072

    申请日：2012-03-19

    申请人： Koji Ueda ,  Katsuya Nishiyama ,  Toshihiko Nagase ,  Daisuke Watanabe ,  Eiji Kitagawa ,  Tadashi Kai

    发明人： Koji Ueda ,  Katsuya Nishiyama ,  Toshihiko Nagase ,  Daisuke Watanabe ,  Eiji Kitagawa ,  Tadashi Kai

    IPC分类号： H01L29/82

    CPC分类号： H01L27/228 ,  G11C11/161 ,  H01L43/08

    摘要： According to one embodiment, a magnetoresistive element includes the following configuration. First nonmagnetic layer is provided between the first magnetic layer (storage layer) and the second magnetic layer (reference layer). Third magnetic layer is formed on a surface of the storage layer, which is opposite to a surface on which the first nonmagnetic layer is formed. Fourth magnetic layer is formed on a surface of the reference layer, which is opposite to a surface on which the first nonmagnetic layer is formed. The third and fourth magnetic layers have a magnetization antiparallel to the magnetization of the storage layer. Second nonmagnetic layer is located between the storage and third magnetic layers. Third nonmagnetic layer is located between the reference and fourth magnetic layers. The thickness of the fourth magnetic layer is smaller than that of the third magnetic layer.

    摘要翻译： 根据一个实施例，磁阻元件包括以下构造。 第一非磁性层设置在第一磁性层（存储层）和第二磁性层（参考层）之间。 第三磁性层形成在存储层的与形成有第一非磁性层的表面相反的表面上。 第四磁性层形成在与形成第一非磁性层的表面相反的参考层的表面上。 第三和第四磁性层具有与存储层的磁化反平行的磁化。 第二非磁性层位于存储和第三磁性层之间。 第三非磁性层位于参考和第四磁性层之间。 第四磁性层的厚度小于第三磁性层的厚度。

    MAGNETORESISTIVE ELEMENT AND MAGNETORESISTIVE RANDOM ACCESS MEMORY WITH THE SAME
    85.
    发明申请
    MAGNETORESISTIVE ELEMENT AND MAGNETORESISTIVE RANDOM ACCESS MEMORY WITH THE SAME 审中-公开
    磁性元件和磁阻随机存取存储器

    公开(公告)号：US20130249025A1

    公开(公告)日：2013-09-26

    申请号：US13607700

    申请日：2012-09-08

    申请人： Katsuaki NATORI ,  Toshihiko Nagase ,  Eiji Kitagawa ,  Tadashi Kai

    发明人： Katsuaki NATORI ,  Toshihiko Nagase ,  Eiji Kitagawa ,  Tadashi Kai

    IPC分类号： H01L43/02 ,  H01L43/12

    CPC分类号： H01L43/02 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12

    摘要： According to one embodiment, a magnetoresistive element includes a bottom electrode, a first magnetic layer with an magnetic axis substantially perpendicular to a film plane thereof, a first interface layer, an MgO insulating layer, a second interface layer, a second magnetic layer with an magnetic axis nearly perpendicular to a film plane thereof, and a top electrode. The magnetoresistive element has a diffusion barrier layer between the first magnetic layer and the first interface layer when the first magnetic layer contains Pt or Pd, and a diffusion barrier layer between the second magnetic layer and the second interface layer when the second magnetic layer contains Pt or Pd. The diffusion barrier layer is an Hf film of thickness 0.6 nm to 0.8 nm.

    摘要翻译： 根据一个实施例，磁阻元件包括底电极，具有基本上垂直于其膜平面的磁轴的第一磁性层，第一界面层，MgO绝缘层，第二界面层，具有 几乎垂直于其膜平面的磁轴和顶部电极。 当第一磁性层包含Pt或Pd时，磁阻元件在第一磁性层和第一界面层之间具有扩散阻挡层，当第二磁性层含有Pt时，第二磁性层和第二界面层之间具有扩散阻挡层 或Pd。 扩散阻挡层是厚度为0.6nm〜0.8nm的Hf膜。

    Magnetoresistive element and magnetic memory
    86.
    发明授权
    Magnetoresistive element and magnetic memory 有权
    磁阻元件和磁记忆体

    公开(公告)号：US07470963B2

    公开(公告)日：2008-12-30

    申请号：US11213869

    申请日：2005-08-30

    申请人： Tadashi Kai ,  Shigeki Takahashi ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Yoshiaki Saito

    发明人： Tadashi Kai ,  Shigeki Takahashi ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Yoshiaki Saito

    IPC分类号： H01L21/8246

    CPC分类号： G11C11/15 ,  G11C11/16 ,  Y10T428/24917

    摘要： There are provided a first reference layer, in which a direction of magnetization is fixed, and a storage layer including a main body, in which a length in an easy magnetization axis direction is longer than a length in a hard magnetization axis direction, and a projecting portion provided to a central portion of the main body in the hard magnetization axis direction, a direction of magnetization of the storage layer being changeable in accordance with an external magnetic field.

    摘要翻译： 提供了固定有磁化方向的第一参考层和容易磁化轴方向的长度比硬磁化轴方向的长度长的主体的存储层，以及 在硬磁化轴方向上设置在主体的中心部的突出部，存储层的磁化方向根据外部磁场而变化。

    Magnetoresistance element, magnetic memory, and magnetic head
    87.
    发明申请
    Magnetoresistance element, magnetic memory, and magnetic head 审中-公开
    磁阻元件，磁记忆体和磁头

    公开(公告)号：US20060114716A1

    公开(公告)日：2006-06-01

    申请号：US11335468

    申请日：2006-01-20

    申请人： Tadashi Kai ,  Toshihiko Nagase ,  Tatsuya Kishi ,  Yoshiaki Saito

    发明人： Tadashi Kai ,  Toshihiko Nagase ,  Tatsuya Kishi ,  Yoshiaki Saito

    IPC分类号： G11C11/00

    CPC分类号： G11B5/3906 ,  G11C11/16

    摘要： There is provided a magnetoresistance element including a free layer that includes a first ferromagnetic layer and a second ferromagnetic layer whose magnetization directions are equal to each other and a nonmagnetic film intervening between the first and second ferromagnetic layers, a pinned layer including a third ferromagnetic layer that faces the free layer, and a nonmagnetic layer intervening between the free layer and the pinned layer, the nonmagnetic film containing a material selected from the group including titanium, vanadium, zirconium, niobium, molybdenum, technetium, hafnium, tungsten, rhenium, alloys thereof, semiconductors and insulators.

    摘要翻译： 提供了包括自由层的磁阻元件，该自由层包括第一铁磁层和其磁化方向彼此相等的第二铁磁层和介于第一和第二铁磁层之间的非磁性膜，包括第三铁磁层 面向自由层和介于自由层和被钉扎层之间的非磁性层，非磁性膜含有选自钛，钒，锆，铌，钼，锝，铪，钨，铼，合金中的材料 半导体和绝缘体。

    Magnetoresistive element and magnetic memory using the same
    89.
    发明授权
    Magnetoresistive element and magnetic memory using the same 有权
    磁阻元件和使用其的磁存储器

    公开(公告)号：US08670268B2

    公开(公告)日：2014-03-11

    申请号：US13427732

    申请日：2012-03-22

    申请人： Toshihiko Nagase ,  Eiji Kitagawa ,  Katsuya Nishiyama ,  Tadashi Kai ,  Koji Ueda ,  Daisuke Watanabe

    发明人： Toshihiko Nagase ,  Eiji Kitagawa ,  Katsuya Nishiyama ,  Tadashi Kai ,  Koji Ueda ,  Daisuke Watanabe

    IPC分类号： G11C11/00 ,  G11C11/14 ,  G11C11/15 ,  H01L29/82

    CPC分类号： H01L43/08 ,  G11C11/161 ,  H01F10/123 ,  H01F10/3272 ,  H01F10/3286 ,  H01L43/02 ,  H01L43/10

    摘要： According to one embodiment, a magnetoresistive element includes first and second magnetic layers and a first nonmagnetic layer. The first magnetic layer has an axis of easy magnetization perpendicular to a film plane, and a variable magnetization. The second magnetic layer has an axis of easy magnetization perpendicular to a film plane, and an invariable magnetization. The first nonmagnetic layer is provided between the first and second magnetic layers. The second magnetic layer includes third and fourth magnetic layers, and a second nonmagnetic layer formed between the third and fourth magnetic layers. The third magnetic layer is in contact with the first nonmagnetic layer and includes Co and at least one of Zr, Nb, Mo, Hf, Ta, and W.

    摘要翻译： 根据一个实施例，磁阻元件包括第一和第二磁性层和第一非磁性层。 第一磁性层具有垂直于膜平面的容易磁化的轴和可变磁化。 第二磁性层具有垂直于膜平面的容易磁化的轴和不变的磁化。 第一非磁性层设置在第一和第二磁性层之间。 第二磁性层包括第三和第四磁性层，以及形成在第三和第四磁性层之间的第二非磁性层。 第三磁性层与第一非磁性层接触，包括Co和Zr，Nb，Mo，Hf，Ta和W中的至少一种。