公开(公告)号：US20170033280A1

公开(公告)日：2017-02-02

申请号：US15157467

申请日：2016-05-18

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Guohan Hu ,  Daniel C. Worledge

IPC: H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  H01L43/02

CPC classification number: H01F10/329 ,  G11C11/161 ,  H01L27/222 ,  H01L27/226 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: Magnetoresistive random access memory (MRAM) devices include a first magnetic layer. A tunnel barrier layer is formed on the first magnetic layer. The tunnel barrier includes first regions having a first thickness and second regions having a second thickness that is greater than the first thickness. A second magnetic layer is formed on the tunnel barrier layer.

Abstract translation: 磁阻随机存取存储器（MRAM）器件包括第一磁性层。 隧道势垒层形成在第一磁性层上。 隧道势垒包括具有第一厚度的第一区域和具有大于第一厚度的第二厚度的第二区域。 在隧道势垒层上形成第二磁性层。

公开(公告)号：US09466785B1

公开(公告)日：2016-10-11

申请号：US14814129

申请日：2015-07-30

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Guohan Hu ,  Daniel C. Worledge

IPC: H01L43/12 ,  H01L43/02 ,  H01L43/08

Abstract: Magnetoresistive random access memory (MRAM) devices and methods for making the same include growing a tunnel barrier layer on a first magnetic layer. A thin layer of non-wetting material is formed on the tunnel barrier layer, such that the non-wetting material forms distinct regions on the tunnel barrier layer. A second magnetic layer is grown on the tunnel barrier layer.

公开(公告)号：US20160284986A1

公开(公告)日：2016-09-29

申请号：US14744137

申请日：2015-06-19

Applicant: International Business Machines Corporation

Inventor： Guohan Hu ,  Daniel C. Worledge

IPC: H01L43/12 ,  H01L43/08 ,  H01L43/10

CPC classification number: H01L43/10 ,  G11C11/161 ,  H01F10/14 ,  H01F10/16 ,  H01F10/3254 ,  H01F10/3286 ,  H01F41/32 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: A magnetic material includes a cobalt layer between opposing iron layers. The iron layers include iron and are body-centered cubic (BCC), the cobalt layer comprises cobalt and is BCC or amorphous, and the magnetic material has a perpendicular magnetic anisotropy (PMA).

公开(公告)号：US20160284984A1

公开(公告)日：2016-09-29

申请号：US15177619

申请日：2016-06-09

Applicant: International Business Machines Corporation

Inventor： Guohan Hu ,  Daniel C. Worledge

IPC: H01L43/10 ,  H01L43/02 ,  H01L43/08 ,  G11C11/16

CPC classification number: H01L43/10 ,  G11C11/161 ,  H01F10/14 ,  H01F10/16 ,  H01F10/3254 ,  H01F10/3286 ,  H01F41/32 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: A magnetic material includes a cobalt layer between opposing iron layers. The iron layers include iron and are body-centered cubic (BCC), the cobalt layer comprises cobalt and is BCC or amorphous, and the magnetic material has a perpendicular magnetic anisotropy (PMA).

Abstract translation: 磁性材料包括在相对的铁层之间的钴层。 铁层包括铁并且是体心立方（BCC），钴层包括钴并且是BCC或非晶体，并且磁性材料具有垂直磁各向异性（PMA）。

公开(公告)号：US09391266B1

公开(公告)日：2016-07-12

申请号：US14669337

申请日：2015-03-26

Applicant: International Business Machines Corporation

Inventor： Guohan Hu ,  Daniel C. Worledge

IPC: H01L43/10 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12 ,  G11C11/16

CPC classification number: H01L43/10 ,  G11C11/161 ,  H01F10/14 ,  H01F10/16 ,  H01F10/3254 ,  H01F10/3286 ,  H01F41/32 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: A magnetic material includes a cobalt layer between opposing iron layers. The iron layers include iron and are body-centered cubic (BCC), the cobalt layer comprises cobalt and is BCC or amorphous, and the magnetic material has a perpendicular magnetic anisotropy (PMA).

公开(公告)号：US20160190434A1

公开(公告)日：2016-06-30

申请号：US14584001

申请日：2014-12-29

Applicant: International Business Machines Corporation

Inventor： Guohan Hu ,  Daniel C. Worledge

IPC: H01L43/08 ,  H01L43/12 ,  H01L43/02

CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: A mechanism relates to magnetic random access memory (MRAM). A free magnetic layer is provided and first fixed layers are disposed above the free magnetic layer. Second fixed layers are disposed below the free magnetic layer. The first fixed layers and the second fixed layers both comprise a rare earth element.

公开(公告)号：US09059389B2

公开(公告)日：2015-06-16

申请号：US13911588

申请日：2013-06-06

Applicant: International Business Machines Corporation

Inventor： Guohan Hu

IPC: H01L29/82 ,  H01L43/02 ,  H01L43/12 ,  H01L43/08 ,  H01L43/10

CPC classification number: H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A mechanism is provided for a spin torque transfer random access memory device. A tunnel barrier is disposed on a reference layer, and a free layer is disposed on the tunnel barrier. The free layer includes an iron layer as a top part of the free layer. A metal oxide layer is disposed on the iron layer, and a cap layer is disposed on the metal oxide layer.

Abstract translation: 提供了一种用于自旋转矩传递随机存取存储器件的机构。 隧道势垒设置在参考层上，自由层设置在隧道屏障上。 自由层包括作为自由层顶部的铁层。 金属氧化物层设置在铁层上，盖层设置在金属氧化物层上。

公开(公告)号：US20140363701A1

公开(公告)日：2014-12-11

申请号：US13911609

申请日：2013-06-06

Applicant: International Business Machines Corporation

Inventor： Guohan Hu ,  Daniel Worledge

IPC: G11B5/62

CPC classification number: G11B5/8404 ,  G11B5/62 ,  G11C11/16 ,  G11C11/161 ,  H01F10/3259 ,  H01F10/3286 ,  H01F10/329 ,  H01L43/08 ,  H01L43/12

Abstract: A mechanism is provided for a structure with perpendicular magnetic anisotropy. A bottom oxide layer is disposed, and a magnetic layer is disposed adjacent to the bottom oxide layer. The magnetic layer includes iron and is magnetized perpendicularly to a plane of the magnetic layer. A top oxide layer is disposed adjacent to the magnetic layer.

Abstract translation: 为具有垂直磁各向异性的结构提供了一种机制。 设置底部氧化物层，并且磁性层邻近底部氧化物层设置。 磁性层包含铁，并垂直于磁性层的平面被磁化。 顶部氧化物层邻近磁性层设置。

公开(公告)号：US20140361390A1

公开(公告)日：2014-12-11

申请号：US13911602

申请日：2013-06-06

Applicant: International Business Machines Corporation

Inventor： Guohan Hu

IPC: H01L43/02

CPC classification number: H01L43/12 ,  H01L43/08 ,  H01L43/10

Abstract: A mechanism is provided for a spin torque transfer random access memory device. A reference layer is disposed on a seed layer. A tunnel barrier is disposed on the reference layer. A free layer is disposed on the tunnel barrier. A cap layer is disposed on the free layer. The free layer includes a magnetic layer and a metal oxide layer, in which the magnetic layer is disposed on the tunnel barrier and the metal oxide layer is disposed on the magnetic layer. A metal material used in the metal oxide layer includes at least one of Ti, Ta, Ru, Hf, Al, La, and any combination thereof.

公开(公告)号：US20140361389A1

公开(公告)日：2014-12-11

申请号：US13911588

申请日：2013-06-06

Applicant: International Business Machines Corporation

Inventor： Guohan Hu

IPC: H01L43/02

CPC classification number: H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A mechanism is provided for a spin torque transfer random access memory device. A tunnel barrier is disposed on a reference layer, and a free layer is disposed on the tunnel barrier. The free layer includes an iron layer as a top part of the free layer. A metal oxide layer is disposed on the iron layer, and a cap layer is disposed on the metal oxide layer.

Abstract translation: 提供了一种用于自旋转矩传递随机存取存储器件的机构。 隧道势垒设置在参考层上，自由层设置在隧道屏障上。 自由层包括作为自由层顶部的铁层。 金属氧化物层设置在铁层上，盖层设置在金属氧化物层上。