公开(公告)号：US20050194664A1

公开(公告)日：2005-09-08

申请号：US11107897

申请日：2005-04-18

申请人： Ho-Cheol Lee ,  Jae-Hoon Kim ,  Jung-Su Ryu

发明人： Ho-Cheol Lee ,  Jae-Hoon Kim ,  Jung-Su Ryu

IPC分类号： H01L21/60 ,  H01L23/50 ,  H01L23/495

CPC分类号： H01L24/06 ,  H01L23/50 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/4912 ,  H01L2224/49171 ,  H01L2224/49431 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01023 ,  Y10T29/49121 ,  H01L2224/45099 ,  H01L2924/00

摘要： A variety of pad arrangements are provided for semiconductor devices for reducing the likelihood of bonding failures, particularly those due to shorts, and/or for reducing the difference in length between bonding wires to decrease signal skew during operation of the semiconductor device and improve signal integrity.

公开(公告)号：US06914285B2

公开(公告)日：2005-07-05

申请号：US10369625

申请日：2003-02-21

申请人： Jae-Hoon Kim ,  Jong-Hyun Choi

发明人： Jae-Hoon Kim ,  Jong-Hyun Choi

IPC分类号： G11C11/40 ,  H01L21/8234 ,  H01L27/06 ,  H01L27/108 ,  H01L29/76 ,  H01L29/94

CPC分类号： H01L27/0629 ,  H01L21/823462 ,  H01L27/10897

摘要： A peripheral circuit of a semiconductor device, including a circuit further including a plurality of electronic components using same source voltage, wherein the plurality of electronic components have gate oxides of different thicknesses. The plurality of electronic components may be for a delay chain, a directional delay and a power switch.

摘要翻译： 一种半导体器件的外围电路，包括使用相同源电压进一步包括多个电子部件的电路，其中所述多个电子部件具有不同厚度的栅极氧化物。 多个电子部件可以用于延迟链，定向延迟和电源开关。

公开(公告)号：US06901018B2

公开(公告)日：2005-05-31

申请号：US10632572

申请日：2003-08-01

申请人： Il-Man Bae ,  Jae-Hoon Kim ,  Jae-Hyeong Lee

发明人： Il-Man Bae ,  Jae-Hoon Kim ,  Jae-Hyeong Lee

IPC分类号： G11C7/20 ,  G11C11/4072 ,  G11C7/00

CPC分类号： G11C7/20 ,  G11C11/4072

摘要： A method for generating an initializing signal capable of preventing inner circuits installed in a semiconductor memory device from being initially unstably operated due to the application of external electric power. The method includes the steps of: (a) receiving a precharge command for precharging the semiconductor memory device; (b) activating the initializing signal to a first level in response to the received precharge command; (c) receiving a refresh command for refreshing the semiconductor memory device after receipt of the precharge command; (d) receiving a mode set command for setting an operational mode of the semiconductor memory device after receipt of the refresh command; and (e) deactivating the initializing signal to a second level in response to the received mode set command. An alternative method includes the step of (a) receiving a mode set command foe initializing an inner circuit in a semiconductor memory device and (b) generating a control signal in response to the received mode set command and using the control signal as the initializing signal.

摘要翻译： 一种用于产生初始化信号的方法，其能够防止安装在半导体存储器件中的内部电路由于外部电力的施加而最初不稳定地操作。 该方法包括以下步骤：（a）接收用于对半导体存储器件预充电的预充电命令; （b）响应于接收到的预充电命令，将初始化信号激活到第一电平; （c）在接收到预充电命令之后接收用于刷新半导体存储器件的刷新命令; （d）在接收到刷新命令之后接收用于设置半导体存储器件的操作模式的模式设置命令; 以及（e）响应于接收的模式设置命令，将初始化信号去激活到第二电平。 一种替代方法包括以下步骤：（a）接收模式设置命令对象，初始化半导体存储器件中的内部电路，（b）响应于所接收的模式设置命令产生控制信号，并使用控制信号作为初始化信号 。

公开(公告)号：US06891771B2

公开(公告)日：2005-05-10

申请号：US10456169

申请日：2003-06-04

申请人： Jae-Hoon Kim

发明人： Jae-Hoon Kim

IPC分类号： G11C5/14 ,  G11C7/10 ,  G11C7/14

CPC分类号： G11C5/147 ,  G11C7/1045

摘要： A technique for selecting a desired operational voltage mode in a semiconductor memory device by applying an external command signal is disclosed. The technique enables an internal voltage mode to be selected in response to an internal voltage mode selection that is programmable even after the completion of the package process for a semiconductor memory device. In one embodiment, the operational voltage mode selection circuit of a semiconductor memory device includes a first selection signal generating part that allows programmable selection of, or override of, a first operational voltage mode; a second selection signal generating part that allows programmable selection of, or override of, a second operational voltage mode; and an operational voltage mode determining part for decoding the output of the first and second voltage selection signal generating parts, along with programmable input selection signals, output an operational voltage mode determining signal.

摘要翻译： 公开了一种通过应用外部命令信号在半导体存储器件中选择期望的工作电压模式的技术。 该技术使得能够响应于甚至在半导体存储器件的封装处理完成之后可编程的内部电压模式选择来选择内部电压模式。 在一个实施例中，半导体存储器件的工作电压模式选择电路包括第一选择信号产生部分，其允许可编程选择或覆盖第一操作电压模式; 第二选择信号生成部，其允许可编程选择或覆盖第二操作电压模式; 以及用于对第一和第二电压选择信号产生部分的输出以及可编程输入选择信号进行解码的操作电压模式确定部分输出操作电压模式确定信号。

公开(公告)号：US20050074051A1

公开(公告)日：2005-04-07

申请号：US10942776

申请日：2004-09-17

申请人： Myung-Gyoo Won ,  Jae-Hoon Kim ,  Jong-Wook Park

发明人： Myung-Gyoo Won ,  Jae-Hoon Kim ,  Jong-Wook Park

IPC分类号： G11C11/40 ,  G01K3/00 ,  G11C7/04 ,  G01K7/00

CPC分类号： G01K3/005

摘要： A temperature sensing circuit has numerous trip points in conformity with a temperature change without adding decrease resistance branches, so as to obtain a fine control based on the temperature change. Accordingly, when employed in a semiconductor memory device, the temperature sensing circuit substantially reduces the consumption of refresh electrical power in a stand-by state without decreasing the reliability of the semiconductor memory device.

摘要翻译： 温度检测电路具有多个温度变化的跳变点，而不增加减少电阻分支，从而获得基于温度变化的精细控制。 因此，当采用半导体存储器件时，温度检测电路在不降低半导体存储器件的可靠性的情况下，基本上降低了备用状态下刷新电力的消耗。

公开(公告)号：US06864931B1

公开(公告)日：2005-03-08

申请号：US09913253

申请日：2000-02-16

申请人： Satyendra Kumar ,  Jae-Hoon Kim

发明人： Satyendra Kumar ,  Jae-Hoon Kim

IPC分类号： G02B3/00 ,  G02B5/18 ,  G02F1/1333 ,  G02F1/29 ,  G02F1/13

CPC分类号： G02F1/29 ,  G02B3/0006 ,  G02B3/0056 ,  G02B3/0081 ,  G02B5/1828 ,  G02F1/133377 ,  G02F2001/294 ,  G02F2203/28

摘要： This invention relates to methods of building rigid or flexible arrays of electro-optic devices. A phase separated composite structure technique yields adjacent regions of polymer and liquid crystal (LC) of specific architecture instead of a random dispersion of LC droplets. The above devices can be prepared by producing volutes of LC structure (56) next to a polymer area (58) using anisotropic phase separation of LC from a photopolymer. Initial by UV exposure. The shape, size and placement of these regions inside a cell becomes easily controllable with using optical mask or laser beam. The boundaries of LC volume can be controlled by controlling the chemical composition of the polymer and using an alignment layer (28).

摘要翻译： 本发明涉及构建电光装置的刚性或柔性阵列的方法。 相分离复合结构技术产生特定结构的聚合物和液晶（LC）的相邻区域，而不是LC液滴的随机分散。 可以通过使用LC从光聚合物的各向异性相分离，通过在聚合物区域（58）旁边产生LC结构（56）的蜗壳来制备上述装置。 初次用紫外线照射。 使用光学掩模或激光束，这些区域内的这些区域的形状，尺寸和布置变得容易控制。 可以通过控制聚合物的化学成分并使用取向层（28）来控制LC体积的边界。

公开(公告)号：US06788596B2

公开(公告)日：2004-09-07

申请号：US10347181

申请日：2003-01-21

申请人： Jae-Hoon Kim ,  Dong-Il Seo ,  Hyo-Jin Oh

发明人： Jae-Hoon Kim ,  Dong-Il Seo ,  Hyo-Jin Oh

IPC分类号： G11C700

CPC分类号： G11C29/785 ,  G11C29/72 ,  G11C2029/1208

摘要： A semiconductor memory device and a failed cell address programming circuit usable therein. The semiconductor memory device as packaged includes a memory cell array having a plurality of memory cells accessed by an internal address, a plurality of redundant memory cells accessed by a failed cell address of a failed memory cell for repairing a failed memory cell, a comparator for comparing data output from the memory cells during testing the semiconductor memory device as packaged and generating a comparative correspondence signal, a mode setting register for storing an externally applied failed cell address programming control signal in response to a mode control signal, an address generating circuit for generating the internal address by buffering and latching an externally applied address, a failed cell address programming circuit for latching the internal address output from the address generating circuit in response to the failed cell address programming control signal when the comparative accordance signal indicates that a failed memory cell is detected and programming the failed cell address which is an address for accessing the failed memory cell; and a failed cell address decoding circuit for generating a redundant selection signal when the internal address output from the address generating circuit and the failed cell address output from the failed cell address programming correspond.

摘要翻译： 半导体存储器件和可用于其中的故障单元地址编程电路。 封装的半导体存储器件包括具有由内部地址访问的多个存储器单元的存储单元阵列，由故障存储器单元的故障单元地址访问的多个冗余存储器单元，用于修复故障存储单元，比较器 比较在封装半导体存储器件的测试期间从存储器单元输出的数据，并产生比较对应信号;模式设置寄存器，用于响应于模式控制信号存储外部施加的故障单元地址编程控制信号;地址产生电路， 通过缓冲和锁存外部施加的地址来产生内部地址，一个故障的单元地址编程电路，用于当比较的一致信号指示故障存储器时，响应于故障的单元地址编程控制信号来锁存从地址产生电路输出的内部地址 单元被检测和编程t 他失败的单元地址是访问失败的存储单元的地址; 以及当从地址产生电路输出的内部地址和从故障单元地址编程输出的故障单元地址对应时，产生冗余选择信号的故障单元地址解码电路。

公开(公告)号：US06332079B1

公开(公告)日：2001-12-18

申请号：US09526599

申请日：2000-03-16

申请人： Tae-Hoon Kim ,  Jae-Hoon Kim ,  Joon-Sun Uhr

发明人： Tae-Hoon Kim ,  Jae-Hoon Kim ,  Joon-Sun Uhr

IPC分类号： H04Q720

CPC分类号： H04W16/26 ,  H04W36/06

摘要： Disclosed is a service area expansion method and a method of processing calls between service areas in a mobile communication system adopting a CDMA system like a DCS (digital cellular system) or a PCS (personal communication system), in which a reference clock is delayed and an application specific integrated circuit (ASIC) of a plurality of CSMs (cell site modems) in a base station is controlled using such a delayed reference clock so as to expand service area by each CSM ASIC unit, and a handoff area is positioned between expanded service areas so as to perform a normal call processing. A base station of a CDMA mobile communication system is provided with a plurality of CSM ASICs having the same configuration and a delayed reference clock is fed to each CSM ASIC, thus expanding service area. Such a communication service may be provided to the coastal area where a base station is easily installed. A need to install a base station to the wide area having small subscribers is eliminated, decreasing a cost for base station installation.

摘要翻译： 公开了一种服务区域扩展方法和处理采用诸如DCS（数字蜂窝系统）或PCS（个人通信系统）的CDMA系统的移动通信系统中的呼叫的方法，其中参考时钟被延迟， 使用这种延迟的参考时钟来控制基站中的多个CSM（小区站点调制解调器）的专用集成电路（ASIC），以便通过每个CSM ASIC单元扩展服务区域，并且切换区域位于扩展 服务区域，以便执行正常呼叫处理。 CDMA移动通信系统的基站设置有具有相同配置的多个CSM ASIC，并且将延迟的参考时钟馈送到每个CSM ASIC，从而扩展服务区域。 可以将这样的通信服务提供给容易安装基站的沿海地区。 消除了在具有小用户的广域上安装基站的需要，降低了基站安装的成本。

公开(公告)号：US5852432A

公开(公告)日：1998-12-22

申请号：US548551

申请日：1995-10-26

申请人： Jae-Hoon Kim

发明人： Jae-Hoon Kim

IPC分类号： G11B31/00 ,  G11B15/10 ,  G11B27/34 ,  G11B33/10 ,  H04N5/76 ,  H04N5/765 ,  H04N5/775 ,  H04N5/782 ,  G01D15/06

CPC分类号： H04N5/775 ,  H04N5/765 ,  H04N5/782

摘要： A function display controlling method and apparatus for a composite apparatus of a compact disc graphics (CDG) player and of a video cassette recorder (VCR) for displaying on a single fluorescent display panel. The control functions are divided into three groups of the CDG player exclusive function, an exclusive function of the VCR and a function common to both the CDG player and the VCR. The functions selected or currently being executed in the composite apparatus of the CDG player and the VCR are recognized by a controller, and because the CDG player exclusive function, the exclusive function of VCR and the function common to both the CDG player and the VCR, which are stored in a function control input section, are read out in accordance with the operation size, the current operation state is displayed on a fluorescent display panel. Therefore, the fluorescent display panels in the composite apparatus of the CDG player and the VCR are simplified, and the operative functions are clearly displayed.

摘要翻译： 一种用于在单个荧光显示面板上显示的小型盘图形（CDG）播放器和盒式录像机（VCR）的复合装置的功能显示控制方法和装置。 控制功能分为CDG播放器独占功能，VCR的独占功能和CDG播放器和VCR共同的功能三组。 在CDG播放器和VCR的复合装置中选择或正在执行的功能由控制器识别，并且由于CDG播放器排他功能，VCR的排他功能以及CDG播放器和VCR两者共同的功能， 存储在功能控制输入部中的信息根据操作尺寸读出，当前的操作状态被显示在荧光显示面板上。 因此，CDG播放器和VCR的复合装置中的荧光显示面板被简化，并且清晰地显示操作功能。

公开(公告)号：US08848147B2

公开(公告)日：2014-09-30

申请号：US13533440

申请日：2012-06-26

申请人： Jae-Hoon Kim

发明人： Jae-Hoon Kim

IPC分类号： G02F1/1337 ,  G02F1/13

摘要： First alignment is performed by forming an alignment layer that includes a photopolymerizable monomer or oligomer on a substrate and the like, introducing liquid crystal, and bringing the liquid crystal into contact with the alignment layer including the photopolymerizable monomer or oligomer.The liquid crystal is then subjected to secondary alignment by photopolymerizing the photopolymerizable monomer or oligomer including the alignment layer to form an alignment regulator in a state in which an electric field is applied to the liquid crystal to change the alignment of the liquid crystal.