公开(公告)号：US20100267545A1

公开(公告)日：2010-10-21

申请号：US12303127

申请日：2007-06-26

申请人： Yoshihiro Yoneda ,  Shuji Ogura ,  Isamu Yashima

发明人： Yoshihiro Yoneda ,  Shuji Ogura ,  Isamu Yashima

IPC分类号： C04B35/495

CPC分类号： C01G33/00 ,  C01P2002/72 ,  C01P2006/12 ,  C01P2006/14 ,  C01P2006/40 ,  H01G9/052 ,  H01G9/0525

摘要： An object of the present invention is to provide a niobium monoxide able to realize large capacitance in a miniature sized capacitor. The invention relates to a niobium monoxide having a porous structure comprising particles, characterized in that the niobium monoxide has a full-width at half maximum of an X-ray diffraction peak corresponding to a (111) plane or an X-ray diffraction peak corresponding to a (200) plane of 0.21° to 1.0°. The niobium monoxide has a large specific surface area and porosity, and is especially suitable for use in a capacitor.

摘要翻译： 本发明的目的是提供一种能够在小型电容器中实现大电容的铌氧化物。 本发明涉及一种具有包含颗粒的多孔结构的铌氧化物，其特征在于，所述铌氧化物具有对应于（111）面的X射线衍射峰的半峰全宽或对应于X射线衍射峰 到（2.21）至（1.0）的（200）平面。 一氧化铌具有大的比表面积和孔隙率，特别适用于电容器。

公开(公告)号：US07696593B2

公开(公告)日：2010-04-13

申请号：US11771588

申请日：2007-06-29

申请人： Yoshihiro Yoneda ,  Ryuji Yamabi

发明人： Yoshihiro Yoneda ,  Ryuji Yamabi

IPC分类号： H01L31/0304 ,  H01L31/0264

CPC分类号： H01L31/105 ,  H01L31/03046 ,  H01L31/1035 ,  H01L31/18

摘要： A semiconductor photo detecting element includes a PIN-type photo detecting element and window semiconductor layer. The PIN-type photo detecting element has a semiconductor substrate, a first semiconductor layer, a second semiconductor layer and a third semiconductor layer. The first semiconductor layer is provided on the semiconductor substrate, is lattice-matched to the semiconductor substrate, includes a first conductivity type dopant, and has first band gap energy. The second semiconductor layer is provided on the first semiconductor layer, has the first band gap energy, and has a concentration of the first conductivity type dopant lower than that of the first semiconductor layer or is substantially undoped. The third semiconductor layer is provided on the second semiconductor layer. The window semiconductor layer has second band gap energy larger than the first band gap energy at a light-incoming side with respect to the second semiconductor layer and has a thickness of 5 nm to 50 nm.

摘要翻译： 半导体光电检测元件包括PIN型光检测元件和窗半导体层。 PIN型光检测元件具有半导体衬底，第一半导体层，第二半导体层和第三半导体层。 第一半导体层设置在半导体衬底上，与半导体衬底晶格匹配，包括第一导电型掺杂剂，并且具有第一带隙能量。 第二半导体层设置在第一半导体层上，具有第一带隙能量，并且第一导电类型掺杂物的浓度低于第一半导体层的浓度或基本上未掺杂。 第三半导体层设置在第二半导体层上。 窗口半导体层具有比相对于第二半导体层的光入射侧的第一带隙能量大的第二带隙能量，并且具有5nm至50nm的厚度。

公开(公告)号：US07091527B2

公开(公告)日：2006-08-15

申请号：US11166247

申请日：2005-06-27

申请人： Yoshihiro Yoneda ,  Ikuo Hanawa

发明人： Yoshihiro Yoneda ,  Ikuo Hanawa

IPC分类号： H01L31/107

CPC分类号： H01L31/1075 ,  H01L31/02161 ,  H01L31/022408 ,  H01L31/02327 ,  H01L31/1035 ,  H01L31/105

摘要： A semiconductor photodetection device includes a semiconductor structure including an optical absorption layer having a photo-incidence surface on a first side thereof, a dielectric reflecting layer formed on a second side of the semiconductor structure opposite to the first side, a contact electrode surrounding the dielectric reflecting layer and contacting with the semiconductor structure, and a close contact electrode covering the dielectric reflecting layer and contacting with the contact electrode and the dielectric reflecting layer, wherein the close contact electrode adheres to the dielectric reflecting layer more strongly than to the contact electrode.

公开(公告)号：US06924541B2

公开(公告)日：2005-08-02

申请号：US10736072

申请日：2003-12-16

申请人： Yoshihiro Yoneda ,  Ikuo Hanawa

发明人： Yoshihiro Yoneda ,  Ikuo Hanawa

IPC分类号： H01L31/10 ,  H01L29/732 ,  H01L31/0224 ,  H01L31/0304 ,  H01L31/103 ,  H01L31/107 ,  H01L31/109 ,  H01L31/00

CPC分类号： H01L31/1075 ,  H01L31/02161 ,  H01L31/022408 ,  H01L31/02327 ,  H01L31/1035 ,  H01L31/105

摘要： A semiconductor photodetection device includes a semiconductor structure including an optical absorption layer having a photo-incidence surface on a first side thereof, a dielectric reflecting layer formed on a second side of the semiconductor structure opposite to the first side, a contact electrode surrounding the dielectric reflecting layer and contacting with the semiconductor structure, and a close contact electrode covering the dielectric reflecting layer and contacting with the contact electrode and the dielectric reflecting layer, wherein the close contact electrode adheres to the dielectric reflecting layer more strongly than to the contact electrode.

摘要翻译： 半导体光检测装置包括：半导体结构，其包括在第一侧上具有光入射面的光吸收层，形成在与第一侧相反的半导体结构的第二侧上的电介质反射层，围绕电介质的接触电极 反射层并与半导体结构接触，以及覆盖电介质反射层并与接触电极和电介质反射层接触的紧密接触电极，其中紧密接触电极比接触电极更牢固地粘附于电介质反射层。

公开(公告)号：US06791186B2

公开(公告)日：2004-09-14

申请号：US10127640

申请日：2002-04-22

申请人： Haruo Sorimachi ,  Yoshihiro Yoneda

发明人： Haruo Sorimachi ,  Yoshihiro Yoneda

IPC分类号： H01L2348

CPC分类号： H01L23/49822 ,  H01L23/49838 ,  H01L24/81 ,  H01L2224/1134 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2224/16238 ,  H01L2224/81191 ,  H01L2224/81395 ,  H01L2224/81801 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/00015 ,  H01L2224/0401

摘要： A mounting substrate on which a semiconductor element is to be mounted by flip-chip bonding, the semiconductor element having a surface on which a plurality of electrode terminals are arranged in a line, each of said electrode terminals having a protruded electrode formed thereon, wherein the surface of the mounting substrate on which the semiconductor element is to be mounted is provided with a protective film having an opening corresponding to an area of the semiconductor element where the protruded electrodes are located, a plurality of connection electrodes being arranged in the opening, the connection electrodes being provided with a solder for bonding it to the protruded electrodes, and being arranged at the same interval as that of the protruded electrodes, and each of the connection electrodes being connected to a wiring pattern of the mounting substrate, and wherein the length of a portion of the connection electrode from the center of the opening to the end thereof that is not connected with the wiring pattern is 150 &mgr;m or larger. A structure having a semiconductor element mounted on the substrate is also disclosed.

摘要翻译： 一种通过倒装芯片接合将半导体元件安装在其上的安装基板，该半导体元件具有多个电极端子排列成一行的表面，每个所述电极端子上形成有突起电极，其中， 安装有半导体元件的安装基板的表面设置有保护膜，该保护膜具有对应于突起电极所在的半导体元件的区域的开口，多个连接电极布置在开口中， 连接电极设置有用于将其焊接到突出电极的焊料，并且以与突出电极相同的间隔布置，并且每个连接电极连接到安装基板的布线图案，并且其中 连接电极的一部分的长度从开口的中心到其末端为no t接线图为150 mum以上。 还公开了具有安装在基板上的半导体元件的结构。

公开(公告)号：US6049122A

公开(公告)日：2000-04-11

申请号：US136424

申请日：1998-08-20

申请人： Yoshihiro Yoneda

发明人： Yoshihiro Yoneda

IPC分类号： H01L21/56 ,  H05K3/34 ,  H01L23/495

CPC分类号： H01L24/29 ,  H01L21/563 ,  H01L24/83 ,  H01L2224/1134 ,  H01L2224/13144 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/83192 ,  H01L2924/00013 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/15311 ,  H01L2924/15787 ,  H05K3/3452

摘要： A semiconductor device and method to control generation of a void within resin during supply to an area between a semiconductor chip and a substrate body. The substrate body includes a wiring layer which is connected to an external bump through internal wiring. Solder resist is formed on the substrate body and an aperture in the solder resist exposes a plurality of pads to electrically connect with the semiconductor chip. During loading of the semiconductor chip, the resin is supplied to the aperture. The aperture is formed in a circumferential shape to control generation of the void.

摘要翻译： 一种半导体装置和方法，用于在供给到半导体芯片和基板主体之间的区域时控制树脂内的空隙的产生。 基板主体包括通过内部布线连接到外部凸起的布线层。 在基板主体上形成抗焊剂，并且阻焊剂中的孔露出多个焊盘以与半导体芯片电连接。 在加载半导体芯片期间，将树脂供应到孔。 孔径形成为周向形状以控制空隙的产生。

公开(公告)号：US4792489A

公开(公告)日：1988-12-20

申请号：US941351

申请日：1986-12-15

申请人： Hiroshi Kakiuchi ,  Setsuo Fukuhara ,  Michinobu Fujiwara ,  Hiroshi Maeda ,  Yutaka Shirakashi ,  Osamu Asakura ,  Yoshihiro Yoneda ,  Tetsuo Noda ,  Naoyuki Fujita

发明人： Hiroshi Kakiuchi ,  Setsuo Fukuhara ,  Michinobu Fujiwara ,  Hiroshi Maeda ,  Yutaka Shirakashi ,  Osamu Asakura ,  Yoshihiro Yoneda ,  Tetsuo Noda ,  Naoyuki Fujita

IPC分类号： A41G3/00 ,  D01D5/088 ,  D01D5/253 ,  D01F1/10 ,  D01F6/60 ,  D02G3/00

CPC分类号： A41G3/0083 ,  D01D5/0885 ,  D01D5/253 ,  D01F1/10 ,  D01F6/60 ,  Y10T428/2927 ,  Y10T428/2973 ,  Y10T428/2978

摘要： A synthetic fiber having an uneven surface structure consisting of wrinkles having ridges and recesses of the surface of the fiber and not presenting specular luster, which may be used, for example, as artificial hair for wigs, can be produced easily and stably by melt-spinning a starting synthetic resin such as nylon and passing the spun mono-filament through a cooling bath at a temperature not lower than 30.degree. C. for a period of time sufficient for developing wrinkles in its surface. Inclusion of a pigment such as carbon black in an appropriate amount in the starting material is effective in providing dense distribution of wrinkles.

摘要翻译： 具有不均匀的表面结构的合成纤维可以容易且稳定地通过熔融粘合剂制造，该表面结构由具有脊部和纤维表面凹陷的褶皱组成，并且不呈现镜面光泽，例如可用作假发的人造毛发， 旋转起始合成树脂如尼龙，并将纺丝单丝通过冷却浴，温度不低于30℃，持续一段足以在其表面产生皱纹的时间。 在起始材料中包含适量的碳黑等颜料在提供致密的皱纹分布方面是有效的。