摘要:
A method of production of a semiconductor device able to utilize a conventional production system for a resin board to thereby produce a wafer level package without increasing the production cost, comprising electrolessly plating the electrode terminals to cover the surfaces of the electrode terminals by a protective film protecting the electrode terminals from laser beams; grinding the back side of the semiconductor wafer to reduce the thickness of the semiconductor wafer before or after forming the protective film; covering the entirety of the electrode terminal forming surface and back side of the semiconductor wafer, having the electrode terminals covered by a protective film and processed to reduce the thickness of the semiconductor wafer, by a resin to form a laminate; and focusing a laser beam toward the electrode terminal forming surface of the semiconductor wafer from outside the laminate to form via holes with the protective film exposed at their bottom surfaces, then filling the via holes by electroplating to form the conductor parts.
摘要:
An electronic component is provided between at least two wiring boards. An electrode of the electronic component is electrically connected to at least one of the wiring boards. Also, the wiring boards and are electrically connected to each other. Additionally, the gap between the wiring boards and is sealed with a resin. The electronic component built-in substrate is featured in that a bonding pad formed on one of the wiring boards and is electrically connected to an electrode of the electronic component by a bonding wire, and that at least a connection portion between the electrode of the electronic component and the bonding wire is coated with a protection material.
摘要:
A mounting substrate on which a semiconductor element is to be mounted by flip-chip bonding, the semiconductor element having a surface on which a plurality of electrode terminals are arranged in a line, each of said electrode terminals having a protruded electrode formed thereon, wherein the surface of the mounting substrate on which the semiconductor element is to be mounted is provided with a protective film having an opening corresponding to an area of the semiconductor element where the protruded electrodes are located, a plurality of connection electrodes being arranged in the opening, the connection electrodes being provided with a solder for bonding it to the protruded electrodes, and being arranged at the same interval as that of the protruded electrodes, and each of the connection electrodes being connected to a wiring pattern of the mounting substrate, and wherein the length of a portion of the connection electrode from the center of the opening to the end thereof that is not connected with the wiring pattern is 150 &mgr;m or larger. A structure having a semiconductor element mounted on the substrate is also disclosed.
摘要:
It is an electronic component built-in substrate 100 configured as follows. That is, an electronic component 30 is provided between at least two wiring boards 10 and 20. An electrode 34 of the electronic component 30 is electrically connected to at least one of the wiring boards. Also, the wiring boards 10 and 20 are electrically connected to each other. Additionally, the gap between the wiring boards 10 and 20 is sealed with a resin. The electronic component built-in substrate 100 is featured in that a bonding pad 12 formed on one of the wiring boards 10 and 20 is electrically connected to an electrode 32 of the electronic component 30 by a bonding wire 60, and that at least a connection portion between the electrode 32 of the electronic component 30 and the bonding wire 60 is coated with a protection material 70.
摘要:
A semiconductor device characterized in that connection pads for wire bonding are arranged at peripheral regions of an electrode terminal formation surface of a semiconductor chip, test pads for testing the semiconductor chip are arranged in an inside region surrounded by said peripheral regions of said electrode terminal formation surface, and a plurality of rewiring patterns extend from the peripheral regions to said inside region of said electrode terminal formation surface and the individual rewiring patterns connect the individual electrode terminals and the corresponding connection pads and test pads.
摘要:
A multi-chip module (MCM) having semiconductor chips on a top surface of multi-layered interconnection circuits formed on a planar surface of a substrate including: (a) multi-layered interconnection circuits comprising alternatively laminated interconnection layers with insulating layers, and thermal contacts, each of the thermal contacts comprising successively laminated interconnection layers on a bottom and on side-walls of a vertical hole penetrating a plurality of the insulating layers, and a thermal conductor filling the vertical hole on the successively laminated interconnection layers, and (b) a plurality of the semiconductor chips attached to the thermal conductor. In a preferred embodiment, a V-shaped vertical hole is formed in the insulating layers of polyimide for a thermal contact, copper films are successively laminated thereon, unpatterned copper and gold films are deposited thereon, and the entire surface of the metal film including the hole is coated by a silver-powder containing epoxy film, to which semiconductor chips are adhered.
摘要:
Cracks in an Ta.sub.2 O.sub.5 anti-abrasion layer of a thermal printing head resulting from the crystallization of the Ta.sub.2 O.sub.5 in the layer, are suppressed by the addition of SiO.sub.2 to the layer. The anti-abrasion layer is provided as a uniform mixture of Ta.sub.2 O.sub.5 and SiO.sub.2 throughout the layer by sputtering a target composed of a mixture containing tantalum and silicon ingredients onto an antioxidation layer. The thermal printing head is also subjected to annealing to stabilize the resistivity of the heating elements.
摘要翻译:通过在层中添加SiO 2来抑制由层中的Ta 2 O 5的结晶产生的热打印头的Ta 2 O 5耐磨层中的裂纹。 通过将由含有钽和硅成分的混合物组成的靶溅射到抗氧化层上,将抗磨层作为整个层中的Ta 2 O 5和SiO 2的均匀混合物提供。 热敏打印头也进行退火以稳定加热元件的电阻率。
摘要:
A semiconductor device characterized in that connection pads for wire bonding are arranged at peripheral regions of an electrode terminal formation surface of a semiconductor chip, test pads for testing the semiconductor chip are arranged in an inside region surrounded by said peripheral regions of said electrode terminal formation surface, and a plurality of rewiring patterns extend from the peripheral regions to said inside region of said electrode terminal formation surface and the individual rewiring patterns connect the individual electrode terminals and the corresponding connection pads and test pads.
摘要:
A thermal recording head comprising an insulating substrate which has thereon a heat generating resistor pattern made of a thin-film resistor, an electrode pattern having a common power supply electrode pattern portion and a common grounded electrode pattern portion, for supplying the power to the resistor pattern, and a controlling electrode pattern portion, and switching elements for controlling the supply of the power to the resistor pattern. The electrode pattern is made of a thick-film copper paste by a printing process. The operation of the switching elements is controlled by the controlling electrode pattern portion.Also disclosed is a process for manufacturing a wiring substrate for a thermal recording head.
摘要:
A crossover construction of a thermal-head is which the thermal-head comprises: a substrate of insulating material; a plurality of heat elements disposed side by side in one row on said substrate; a plurality of lower thin film conductor patterns each of which connects to each of said heat elements and extends in direction X; an insulating layer disposed over said lower conductors; a plurality of upper conductor patterns disposed in parallel in another direction Y on said insulating layer so as to form a crossover on said substrate, said upper and lower conductors being selectively connected together through openings of said insulating layer, wherein said insulating layer and said upper conductors comprise printed and cured paste of insulating material and conductive material, respectively, each paste being of the low temperature curing type which can be cured at a temperature low enough not to affect the resistance of said thin film lower conductors, and a metallic layer of low resistance is coated on each of said upper conductors.