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114 条记录 (耗时 0.075 秒)

    SEMICONDUCTOR DEVICE, POLYCRYSTALLINE SEMICONDUCTOR THIN FILM, PROCESS FOR PRODUCING POLYCRYSTALLINE SEMICONDUCTOR THIN FILM, FIELD EFFECT TRANSISTOR, AND PROCESS FOR PRODUCING FIELD EFFECT TRANSISTOR
    82.
    发明申请
    SEMICONDUCTOR DEVICE, POLYCRYSTALLINE SEMICONDUCTOR THIN FILM, PROCESS FOR PRODUCING POLYCRYSTALLINE SEMICONDUCTOR THIN FILM, FIELD EFFECT TRANSISTOR, AND PROCESS FOR PRODUCING FIELD EFFECT TRANSISTOR 有权
    半导体器件，多晶半导体薄膜，用于生产多晶半导体薄膜的工艺，场效应晶体管和用于产生场效应晶体管的工艺

    公开(公告)号：US20120168748A1

    公开(公告)日：2012-07-05

    申请号：US13416433

    申请日：2012-03-09

    申请人： Koki Yano ,  Kazuyoshi Inoue

    发明人： Koki Yano ,  Kazuyoshi Inoue

    IPC分类号： H01L29/786 ,  H01L29/26

    CPC分类号： H01L29/7869

    摘要： An object of the present invention is to provide a novel semiconductor device which is excellent in stability, uniformity, reproducibility, heat resistance, durability and the like, and can exert excellent transistor properties. The semiconductor device is a thin-film transistor, and this thin-film transistor uses, as an active layer, a polycrystalline oxide semiconductor thin film containing In and two or more metals other than In and having an electron carrier concentration of less than 1×1018/cm3.

    摘要翻译： 本发明的目的是提供一种稳定性，均匀性，再现性，耐热性，耐久性等优异的新颖的半导体装置，能够发挥优异的晶体管特性。 该半导体器件是薄膜晶体管，该薄膜晶体管使用含有In和In以外的两种以上的金属且电子载流子浓度小于1×的多晶氧化物半导体薄膜作为有源层 1018 / cm3。

    SEMICONDUCTOR DEVICE, POLYCRYSTALLINE SEMICONDUCTOR THIN FILM, PROCESS FOR PRODUCING POLYCRYSTALLINE SEMICONDUCTOR THIN FILM, FIELD EFFECT TRANSISTOR, AND PROCESS FOR PRODUCING FIELD EFFECT TRANSISTOR
    84.
    发明申请
    SEMICONDUCTOR DEVICE, POLYCRYSTALLINE SEMICONDUCTOR THIN FILM, PROCESS FOR PRODUCING POLYCRYSTALLINE SEMICONDUCTOR THIN FILM, FIELD EFFECT TRANSISTOR, AND PROCESS FOR PRODUCING FIELD EFFECT TRANSISTOR 有权
    半导体器件，多晶半导体薄膜，用于生产多晶半导体薄膜的工艺，场效应晶体管和用于产生场效应晶体管的工艺

    公开(公告)号：US20100140609A1

    公开(公告)日：2010-06-10

    申请号：US12532259

    申请日：2008-03-21

    申请人： Koki Yano ,  Kazuyoshi Inoue

    发明人： Koki Yano ,  Kazuyoshi Inoue

    IPC分类号： H01L29/22 ,  H01L21/36

    CPC分类号： H01L29/7869

    摘要： An object of the present invention is to provide a novel semiconductor device which is excellent in stability, uniformity, reproducibility, heat resistance, durability and the like, and can exert excellent transistor properties. The semiconductor device is a thin-film transistor, and this thin-film transistor uses, as an active layer, a polycrystalline oxide semiconductor thin film containing In and two or more metals other than In and having an electron carrier concentration of less than 1×1018/cm3.

    摘要翻译： 本发明的目的是提供一种稳定性，均匀性，再现性，耐热性，耐久性等优异的新颖的半导体装置，能够发挥优异的晶体管特性。 该半导体器件是薄膜晶体管，该薄膜晶体管使用含有In和In以外的两种以上的金属且电子载流子浓度小于1×的多晶氧化物半导体薄膜作为有源层 1018 / cm3。

    Semiconductor thin film and process for producing the same
    89.
    发明授权
    Semiconductor thin film and process for producing the same 有权
    半导体薄膜及其制造方法

    公开(公告)号：US08062777B2

    公开(公告)日：2011-11-22

    申请号：US12090731

    申请日：2006-08-07

    申请人： Kazuyoshi Inoue ,  Koki Yano ,  Nobuo Tanaka ,  Tokie Tanaka, legal representative

    发明人： Kazuyoshi Inoue ,  Koki Yano ,  Nobuo Tanaka

    IPC分类号： B32B19/00

    CPC分类号： C30B29/06 ,  C01G15/00 ,  C01G15/006 ,  C01P2006/40 ,  C04B35/01 ,  C04B2235/3224 ,  C04B2235/3229 ,  C04B2235/3286 ,  C04B2235/6567 ,  C23C14/086 ,  C23C14/3414 ,  C30B29/16 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/02667

    摘要： This invention provides a transparent oxide semiconductor, which comprises an oxide comprising indium oxide as a main component and cerium oxide as an additive and has such properties that light-derived malfunction does not occur, there is no variation in specific resistance of a thin film caused by heating and the like, and the mobility is high, and a process for producing the same. A semiconductor thin film characterized by comprising indium oxide and cerium oxide and being crystalline and having a specific resistance of 10+1 to 10+8 Ωcm is used. This semiconductor thin film has no significant change in specific resistance and has high mobility. Accordingly, an element having improved switching properties can be provided by constructing a switching element using this semiconductor thin film.

    摘要翻译： 本发明提供了一种透明氧化物半导体，其包括以氧化铟为主要成分的氧化物和氧化铈作为添加剂，并且具有不发生光衍生的故障的特性，因此薄膜的电阻率没有变化 通过加热等，迁移率高，以及其制造方法。 使用特征在于包含氧化铟和氧化铈并且是结晶并具有10 + 1至10 + 8＆OHgr cm的电阻率的半导体薄膜。 该半导体薄膜的电阻率没有显着变化，迁移率高。 因此，可以通过构造使用该半导体薄膜的开关元件来提供具有改善的开关特性的元件。